Appendix
Component
Data Sheets
LM741
Operational Amplifier
General Description
The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plug-in replacements
for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and
output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
The LM741C is identical to the LM741/LM741A except that
the LM741C has their performance guaranteed over a 0˚C to
+70˚C temperature range, instead of −55˚C to +125˚C.
Connection Diagrams
Dual-In-Line or S.O. Package
Metal Can Package
DS009341-3
DS009341-2
Note 1: LM741H is available per JM38510/10101
Order Number LM741J, LM741J/883, LM741CN
See NS Package Number J08A, M08A or N08E
Order Number LM741H, LM741H/883 (Note 1),
LM741AH/883 or LM741CH
See NS Package Number H08C
Ceramic Flatpak
DS009341-6
Order Number LM741W/883
See NS Package Number W10A
Typical Application
Offset Nulling Circuit
DS009341-7
© 2000 National Semiconductor Corporation
DS009341
www.national.com
LM741 Operational Amplifier
August 2000
LM741
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 7)
LM741A
LM741
LM741C
± 22V
± 22V
± 18V
Supply Voltage
Power Dissipation (Note 3)
500 mW
500 mW
500 mW
± 30V
± 30V
± 30V
Differential Input Voltage
±
±
± 15V
15V
15V
Input Voltage (Note 4)
Output Short Circuit Duration
Continuous
Continuous
Continuous
Operating Temperature Range
−55˚C to +125˚C
−55˚C to +125˚C
0˚C to +70˚C
Storage Temperature Range
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
Junction Temperature
150˚C
150˚C
100˚C
Soldering Information
N-Package (10 seconds)
260˚C
260˚C
260˚C
J- or H-Package (10 seconds)
300˚C
300˚C
300˚C
M-Package
Vapor Phase (60 seconds)
215˚C
215˚C
215˚C
Infrared (15 seconds)
215˚C
215˚C
215˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 8)
400V
400V
400V
Electrical Characteristics (Note 5)
Parameter
Conditions
LM741A
Min
Input Offset Voltage
LM741
Typ
Max
0.8
3.0
Min
LM741C
Typ
Max
1.0
5.0
Min
Units
Typ
Max
2.0
6.0
TA = 25˚C
RS ≤ 10 kΩ
RS ≤ 50Ω
mV
mV
TAMIN ≤ TA ≤ TAMAX
RS ≤ 50Ω
4.0
mV
RS ≤ 10 kΩ
6.0
Average Input Offset
7.5
15
mV
µV/˚C
Voltage Drift
Input Offset Voltage
TA = 25˚C, VS = ± 20V
± 10
± 15
± 15
mV
Adjustment Range
Input Offset Current
TA = 25˚C
3.0
TAMIN ≤ TA ≤ TAMAX
Average Input Offset
30
20
200
70
85
500
20
200
300
0.5
nA
nA
nA/˚C
Current Drift
Input Bias Current
TA = 25˚C
30
TAMIN ≤ TA ≤ TAMAX
Input Resistance
80
80
0.210
TA = 25˚C, VS = ± 20V
1.0
TAMIN ≤ TA ≤ TAMAX,
0.5
6.0
500
80
1.5
0.3
2.0
500
0.8
0.3
2.0
nA
µA
MΩ
MΩ
VS = ± 20V
Input Voltage Range
± 12
TA = 25˚C
TAMIN ≤ TA ≤ TAMAX
www.national.com
± 12
2
± 13
± 13
V
V
Parameter
(Continued)
Conditions
LM741A
Min
Large Signal Voltage Gain
LM741
Electrical Characteristics (Note 5)
Typ
LM741
Max
Min
Typ
LM741C
Max
Min
Typ
Units
Max
TA = 25˚C, RL ≥ 2 kΩ
VS = ± 20V, VO = ± 15V
50
V/mV
VS = ± 15V, VO = ± 10V
50
200
20
200
V/mV
TAMIN ≤ TA ≤ TAMAX,
RL ≥ 2 kΩ,
VS = ± 20V, VO = ± 15V
32
V/mV
VS = ± 15V, VO = ± 10V
VS = ± 5V, VO = ± 2V
Output Voltage Swing
25
15
V/mV
10
V/mV
± 16
± 15
V
VS = ± 20V
RL ≥ 10 kΩ
RL ≥ 2 kΩ
V
VS = ± 15V
RL ≥ 10 kΩ
± 12
± 10
RL ≥ 2 kΩ
Output Short Circuit
TA = 25˚C
10
Current
TAMIN ≤ TA ≤ TAMAX
10
Common-Mode
TAMIN ≤ TA ≤ TAMAX
Rejection Ratio
RS ≤ 10 kΩ, VCM = ± 12V
RS ≤ 50Ω, VCM = ± 12V
Supply Voltage Rejection
TAMIN ≤ TA ≤ TAMAX,
Ratio
VS = ± 20V to VS = ± 5V
RS ≤ 50Ω
25
35
± 12
± 10
25
± 14
± 13
V
25
mA
V
40
mA
70
90
70
90
dB
80
95
dB
86
96
dB
RS ≤ 10 kΩ
Transient Response
± 14
± 13
77
96
77
96
dB
TA = 25˚C, Unity Gain
Rise Time
0.25
0.8
0.3
0.3
µs
Overshoot
6.0
20
5
5
%
0.5
0.5
Bandwidth (Note 6)
TA = 25˚C
Slew Rate
TA = 25˚C, Unity Gain
Supply Current
TA = 25˚C
Power Consumption
0.437
1.5
0.3
0.7
MHz
80
1.7
2.8
mA
50
85
50
85
mW
150
VS = ± 15V
LM741
2.8
TA = 25˚C
VS = ± 20V
LM741A
V/µs
1.7
mW
VS = ± 20V
TA = TAMIN
165
mW
TA = TAMAX
135
mW
VS = ± 15V
TA = TAMIN
60
100
mW
TA = TAMAX
45
75
mW
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
3
www.national.com
LM741
Electrical Characteristics (Note 5)
(Continued)
Note 3: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Ratings”). Tj = TA + (θjA PD).
Thermal Resistance
θjA (Junction to Ambient)
Cerdip (J)
DIP (N)
HO8 (H)
SO-8 (M)
100˚C/W
100˚C/W
170˚C/W
195˚C/W
N/A
N/A
25˚C/W
N/A
θjC (Junction to Case)
Note 4: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 5: Unless otherwise specified, these specifications apply for VS = ± 15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifications are limited to 0˚C ≤ TA ≤ +70˚C.
Note 6: Calculated value from: BW (MHz) = 0.35/Rise Time(µs).
Note 7: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Schematic Diagram
DS009341-1
www.national.com
4
LM741
Physical Dimensions
inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LM741H, LM741H/883, LM741AH/883, LM741AH-MIL or LM741CH
NS Package Number H08C
Ceramic Dual-In-Line Package (J)
Order Number LM741J/883
NS Package Number J08A
5
www.national.com
LM741
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)
Order Number LM741CN
NS Package Number N08E
10-Lead Ceramic Flatpak (W)
Order Number LM741W/883, LM741WG-MPR or LM741WG/883
NS Package Number W10A
www.national.com
6
LM741 Operational Amplifier
Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 180-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 69 9508 6208
English Tel: +44 (0) 870 24 0 2171
Français Tel: +33 (0) 1 41 91 8790
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: ap.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Tstg
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
1.0
4.0
-65 to +200
A
A
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Characteristic
Max
Units
1N/FDLL 914/A/B / 4148 / 4448
PD
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
VR
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
CT
Total Capacitance
trr
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
Min
IR = 100 µA
IR = 5.0 µA
IF = 5.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 20 mA
IF = 20 mA
IF = 100 mA
VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V
Max
Units
720
730
1.0
1.0
1.0
1.0
25
50
5.0
V
V
mV
mV
V
V
V
V
nA
µA
µA
2.0
4.0
4.0
pF
pF
ns
100
75
620
630
VR = 0, f = 1.0 MHz
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V (60mA),
Irr = 1.0 mA, RL = 100Ω
Typical Characteristics
160
120
o
o
T a= 25 C
Reverse Current, IR [nA]
Reverse Voltage, VR [V]
Ta=25 C
150
140
130
120
100
80
60
40
20
0
110
1
2
3
5
10
20
30
50
Reverse Current, IR [uA]
30
50
70
100
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
550
750
o
o
Ta= 25 C
Ta= 25 C
500
Forward Voltage, VF [mV]
Forward Voltage, VR [mV]
20
R everse V oltage, V R [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
450
400
350
300
250
10
100
700
650
600
550
500
450
1
2
3
5
10
20
30
50
100
Forward Current, IF [uA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I F [m A]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Typical Characteristics
(continued)
900
1.6
o
Forward Voltage, VF [mV]
Forward Voltage, V F [mV]
Ta= 25 C
1.4
1.2
1.0
0.8
Typical
800
o
Ta= -40 C
700
o
Ta= 25 C
600
500
o
Ta= +65 C
400
300
0.6
10
20
30
50
100
200
300
500
0.01
800
0.3
0.1
0.03
Forward Current, IF [mA]
3
1
10
Forward Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
0.90
Figure 6. Forward Voltage
vs Ambient Temperature
VF - 0.01 - 20 mA (-40 to +65 Deg C)
4.0
o
o
Reverse Recovery Time, t rr [ns]
TA = 25 C
Ta = 25 C
Total Capacitance (pF)
3.5
3.0
0.85
2.5
2.0
0.80
1.5
1.0
0.75
0
2
4
6
8
10
12
10
14
REVERSE VOLTAGE (V)
30
40
50
60
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
500
Power Dissipation, PD [mW]
500
400
Current (mA)
20
Reverse Recovery Current, Irr [mA]
400
300
DO-35
300
IF(
200
AV )
- A VE
R AG
E RE
C
D CU
R RE
100
NT -
mA
100
0
0
50
SOT-23
200
TIFIE
100
150
0
0
50
100
150
o
Ambient Temperature ( C)
Figure 9. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
o
Temperature [ C]
Figure 10. Power Derating Curve
200
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
High density cell design for low RDS(ON).
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
S
2N7000
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
2N7000
2N7002
NDS7002A
Symbol
Parameter
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
±40
- Non Repetitive (tp < 50µs)
ID
Maximum Drain Current - Continuous
PD
Maximum Power Dissipation
- Pulsed
o
Derated above 25 C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Units
200
115
280
500
800
1500
400
200
300
3.2
1.6
-55 to 150
2.4
-65 to 150
300
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
312.5
625
417
°C/W
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Type
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
All
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
2N7000
V
TJ=125°C
VDS = 60 V, VGS = 0 V
TJ=125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
2N7002
NDS7002A
1
µA
1
mA
1
µA
0.5
mA
VGS = 15 V, VDS = 0 V
2N7000
10
nA
VGS = 20 V, VDS = 0 V
2N7002
NDS7002A
100
nA
VGS = -15 V, VDS = 0 V
2N7000
-10
nA
VGS = -20 V, VDS = 0 V
2N7002
NDS7002A
-100
nA
V
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
RDS(ON)
2N7000
0.8
2.1
3
2N7002
NDS7002A
1
2.1
2.5
1.2
5
1.9
9
1.8
5.3
1.2
7.5
1.7
13.5
2N7000
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA
TJ =125°C
VGS = 4.5 V, ID = 75 mA
2N7002
VGS = 10 V, ID = 500 mA
TJ =100°C
VGS = 5.0 V, ID = 50 mA
TJ =100C
VGS = 10 V, ID = 500 mA
NDS7002A
TJ =125°C
VGS = 5.0 V, ID = 50 mA
TJ =125°C
VDS(ON)
Drain-Source On-Voltage
VGS = 10 V, ID = 500 mA
2N7000
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500mA
2N7002
VGS = 5.0 V, ID = 50 mA
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA
NDS7002A
1.7
7.5
2.4
13.5
1.2
2
2
3.5
1.7
3
2.8
5
0.6
2.5
0.14
0.4
0.6
3.75
0.09
1.5
0.6
1
0.09
0.15
Ω
V
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
A
= 25oC unless otherwise noted
Parameter
Conditions
Type
Min
Typ
Max
Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
VGS = 4.5 V, VDS = 10 V
2N7000
75
600
VGS = 10 V, VDS > 2 VDS(on)
2N7002
500
2700
VGS = 10 V, VDS > 2 VDS(on)
NDS7002A
500
2700
VDS = 10 V, ID = 200 mA
2N7000
100
320
VDS > 2 VDS(on), ID = 200 mA
2N7002
80
320
VDS > 2 VDS(on), ID = 200 mA
NDS7002A
80
320
mA
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
toff
Turn-Off Time
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All
20
50
pF
All
11
25
pF
All
4
5
pF
ns
VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N7002
NDS7002A
20
VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N700
NDS7002A
20
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
ISM
VSD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
2N7002
115
NDS7002A
280
2N7002
0.8
NDS7002A
1.5
VGS = 0 V, IS = 115 mA (Note 1)
2N7002
0.88
1.5
VGS = 0 V, IS = 400 mA (Note 1)
NDS7002A
0.88
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V GS =4.0V
8.0
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
9.0
7.0
1 .5
6.0
1
5.0
0 .5
4.0
I
D
, DRAIN-SOURCE CURRENT (A)
VGS = 10V
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5 .0
6 .0
2
7 .0
8 .0
1 .5
9 .0
10
1
0 .5
5
0
0 .8
1 .2
I D , DRA IN CURRENT (A)
1 .6
2
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
3
V GS = 10V
I D = 500m A
R DS(on) , NORMALIZED
1.75
1.5
1.25
1
0.75
0.5
-5 0
-2 5
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0 .4
Figure 1. On-Region Characteristics
V GS = 10V
2 .5
TJ = 1 2 5 ° C
2
1 .5
25°C
1
-55°C
0 .5
0
150
0
Figure 3. On-Resistance Variation
with Temperature
0 .4
0 .8
1 .2
I D , DRAIN CURRENT (A)
1 .6
2
Figure 4. On-Resistance Variation with Drain
Current and Temperature
2
T J = -55°C
25°C
125°C
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
VDS = 10V
ID , DRAIN CURRENT (A)
4 .5
2 .5
V DS = VGS
1 .0 5
I D = 1 mA
1
0 .9 5
0 .9
0 .8 5
0 .8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
2
I D = 250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
V GS = 0V
1
1.075
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
0 .5
TJ = 1 2 5 ° C
0 .1
25°C
0 .0 5
-5 5 ° C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
150
0 .6
0 .8
1
1 .2
, BODY DIODE FORW A RD VOLTAGE (V)
1 .4
Figure 8. Body Diode Forward Voltage Variation with
Figure 7. Breakdown Voltage Variation
with Temperature
10
60
V DS = 2 5 V
VGS , GATE-SOURCE VOLTAGE (V)
40
C iss
20
CAPACITANCE (pF)
0 .4
V SD
C oss
10
5
C rss
f = 1 MHz
2
V GS = 0V
8
6
ID = 5 0 0 m A
4
2
280m A
115m A
1
0
1
2
3
V DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
Figure 9. Capacitance Characteristics
0
0 .4
0 .8
1 .2
Q g , GATE CHARGE (nC)
t d(on)
VGS
R GEN
tr
RL
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
Figure 11.
t off
t on
D
2
Figure 10. Gate Charge Characteristics
VDD
V IN
1 .6
Inverted
50%
50%
10%
Pulse Width
Figure 12. Switching Waveforms
2N7000.SAM Rev. A1
3
2
3
2
1
1
0.5
S(
RD
Lim
)
ON
10
it
1m
10
ms
10
0m
s
1s
0.1
0.05
V GS = 10V
s
s
10
s
DC
SINGLE PULSE
T A = 25°C
0.01
0u
ID , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
Typical Electrical Characteristics (continued)
10
0.5
RD
1m
10
0.1
10
0.05
0.01
0m
0u
s
s
ms
s
1s
10
s
DC
VGS = 10V
SINGLE PULSE
T A = 25°C
0.005
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
1
Figure 13. 2N7000 Maximum
Safe Operating Area
3
2
1
I D , DRAIN CURRENT (A)
S(O
Lim
N)
it
RD
S(O
N)
Lim
10
1m
0.5
0.1
10
0.05
V GS = 10V
60
80
0u
s
s
ms
s
1s
10
s
DC
SINGLE PULSE
T A = 25°C
0.01
0m
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 14. 2N7002 Maximum
Safe Operating Area
it
10
2
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
Figure 15. NDS7000A Maximum
Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
D = 0.5
0.5
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0 .2
0.2
0.1
0.1
P(pk)
0.05
t1
0.05
0 .02
Single Pulse
0.02
0.01
0.0001
0.001
t2
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0 .2
0.1
0.05
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0.1
0 .0 5
0 .0 2
P(pk)
0 .0 1
t1
0.01
t2
Single Pulse
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
2N7000.SAM Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
2N2219A
2N2222A
®
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CBO
V CEO
V EBO
IC
I CM
P tot
T stg
Tj
Parameter
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Total Dissipation at T amb ≤ 25 o C
for 2N2219A
for 2N2222A
at T C ≤ 25 o C
for 2N2219A
for 2N2222A
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
75
40
6
0.6
0.8
Unit
V
V
V
A
A
0.8
0.5
W
W
3
1.8
W
W
-65 to 175
175
o
o
C
C
1/7
2N2219A / 2N2222A
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
TO-39
TO-18
50
187.5
83.3
300
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
10
nA
µA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 60 V
V CB = 60 V
I CEX
Collector Cut-off
Current (V BE = -3V)
V CE = 60 V
10
nA
I BEX
Base Cut-off Current
(V BE = -3V)
V CE = 60 V
20
nA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 3 V
10
nA
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 10 µA
75
V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
40
V
6
V
V (BR)CBO
T j = 150 o C
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
0.6
DC Current Gain
I C = 0.1 mA
V CE = 10 V
I C = 1 mA
V CE = 10 V
I C = 10 mA
V CE = 10 V
I C = 150 mA
V CE = 10 V
I C = 500 mA
V CE = 10 V
I C = 150 mA
V CE = 1 V
I C = 10 mA
V CE = 10 V
T amb = -55 o C
35
50
75
100
40
50
h FE ∗
V
V
1.2
2
V
V
300
35
hfe ∗
Small Signal Current
Gain
I C = 1 mA
I C = 10 mA
fT
Transition Frequency
I C = 20 mA
f = 100 MHz
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
f = 100KHz
25
pF
C CBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
8
pF
R e(hie)
Real Part of Input
Impedance
I C = 20 mA
f = 300MHz
60
Ω
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/7
0.3
1
V CE = 10 V
V CE = 10 V
f = 1KHz
f = 1KHz
V CE = 20 V
V CE = 20 V
50
75
300
375
300
MHz
2N2219A / 2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
NF
Noise Figure
I C = 0.1 mA V CE = 10 V
f = 1KHz
R g = 1KΩ
hie
Input Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h re
Reverse Voltage Ratio
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h oe
Output Admittance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
t d ∗∗
Delay Time
V CC = 30 V
I B1 = 15 mA
t r ∗∗
Rise Time
V CC = 30 V
I B1 = 15 mA
t s∗∗
Storage Time
t f ∗∗
r bb’ C b’c
Min.
Typ.
Max.
4
2
0.25
Unit
dB
8
1.25
kΩ
kΩ
8
4
10 -4
-4
10
35
200
µS
µS
I C = 150 mA
V BB = -0.5 V
10
ns
I C = 150 mA
V BB = -0.5 V
25
ns
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
225
ns
Fall Time
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
60
ns
Feedback Time
Constant
I C = 20 mA V CE = 20 V
f = 31.8MHz
150
ps
5
25
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit
3/7
2N2219A / 2N2222A
Test Circuit fot td, tr.
PULSE GENERATOR :
tr ≤ 20 ns
PW ≤ 200 ns
ZIN = 50 Ω
TO OSCILLOSCOPE
tr ≤ 5.0 ns
ZIN < 100 KΩ
CIN ≤ 12 pF
PULSE GENERATOR :
PW ≈ 10 µs
ZIN = 50 Ω
TC ≤ 5.0 ns
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 KΩ
CIN ≤ 12 pF
Test Circuit fot td, tr.
4/7
2N2219A / 2N2222A
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
G
A
I
E
F
H
B
L
C
0016043
5/7
2N2219A / 2N2222A
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
G
A
I
E
F
H
B
L
P008B
6/7
2N2219A / 2N2222A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2907; 2N2907A
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 30
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• Switching and linear amplification.
DESCRIPTION
3
1
handbook, halfpage
2
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
2
3
Fig.1
MAM263
1
Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
MIN.
−
MAX.
−60
UNIT
V
2N2907
−
−40
V
2N2907A
−
−60
V
−
−600
mA
mW
IC
collector current (DC)
Ptot
total power dissipation
Tamb ≤ 25 °C
−
400
hFE
DC current gain
IC = −150 mA; VCE = −10 V
100
300
fT
transition frequency
IC = −50 mA; VCE = −20 V; f = 100 MHz
200
−
MHz
toff
turn-off time
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
300
ns
1997 May 30
2
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base; IC < −100 mA
2N2907
2N2907A
MIN.
MAX.
UNIT
−
−60
V
−
−40
V
−
−60
V
−
−5
V
VEBO
emitter-base voltage
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
Ptot
total power dissipation
open collector
−
−200
mA
Tamb ≤ 25 °C
−
400
mW
Tcase ≤ 25 °C
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 May 30
CONDITIONS
in free air
3
VALUE
UNIT
438
K/W
146
K/W
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
MAX.
UNIT
IE = 0; VCB = −50 V
−
−20
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−
−20
µA
collector cut-off current
2N2907A
IE = 0; VCB = −50 V
−
−10
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−
−10
µA
−
−50
nA
IC = −0.1 mA
35
−
IC = −1 mA
50
−
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
VCE = −10 V
2N2907
hFE
MIN.
collector cut-off current
2N2907
ICBO
CONDITIONS
DC current gain
2N2907A
IC = −10 mA
75
−
IC = −150 mA; note 1
100
300
IC = −500 mA; note 1
30
VCE = −10 V
IC = −0.1 mA
75
−
IC = −1 mA
100
−
IC = −10 mA
100
−
IC = −150 mA; note 1
100
300
IC = −500 mA; note 1
50
−
VCEsat
collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1
−400
mV
IC = −500 mA; IB = −50 mA; note 1
−1.6
V
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−1.3
V
IC = −500 mA; IB = −50 mA; note 1
−2.6
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
30
pF
fT
transition frequency
IC = −50 mA; VCE = −20 V; f = 100 MHz;
note 1
200
−
MHz
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
45
ns
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
−
15
ns
tr
rise time
−
35
ns
toff
turn-off time
−
300
ns
ts
storage time
−
250
ns
tf
fall time
−
50
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 May 30
4
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 May 30
5
oscilloscope
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 May 30
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
6
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 30
7
Revised January 1999
CD4007C
Dual Complementary Pair Plus Inverter
General Description
The CD4007C consists of three complementary pairs of Nand P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected
from static discharge by diode clamps to VDD and VSS.
For proper operation the voltages at all pins must be constrained to be between VSS − 0.3V and VDD + 0.3V at all
times.
Features
■ Wide supply voltage range:
■ High noise immunity:
3.0V to 15V
0.45 VCC (typ.)
Ordering Code:
Order Number
Package Number
Package Description
CD4007CM
M14A
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow
CD4007CN
N14A
14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS–001, 0.300” Wide
Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.
Connection Diagram
Pin Assignments for DIP and SOIC
Note: All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS.
Top View
© 1999 Fairchild Semiconductor Corporation
DS005943.prf
www.fairchildsemi.com
CD4007C Dual Complementary Pair Plus Inverter
October 1987
CD4007C
Absolute Maximum Ratings(Note 1)
VSS −0.3V to VDD +0.3V
Voltage at Any Pin
Lead Temperature
−65°C to +150°C
Storage Temperature Range
(Soldering, 10 seconds)
Power Dissipation (PD)
Dual-In-Line
700 mW
Small Outline
500 mW
VSS +3.0V to VSS +15V
Operating VDD Range
−40°C to +85°C
Operating Temperature Range
260°C
Note 1: This device should not be connected to circuits with the power on
because high transient voltages may cause permanent damage.
DC Electrical Characteristics
Limits
Symbol
Parameter
−40°C
Conditions
Min
IL
PD
VOL
VOH
VNL
VNH
IDN
IDP
II
Typ
+25°C
Max
Min
+85°C
Typ
Max
Min
Typ
Units
Max
Quiescent Device
VDD = 5.0V
0.5
0.005
0.05
15
Current
VDD = 10V
1.0
0.005
1.0
30
µA
Quiescent Device
VDD = 5.0V
2.5
0.025
2.5
75
µW
Dissipation Package
VDD = 10V
10
0.05
10
300
µW
Output Voltage
VDD = 5.0V
0.05
0
0.01
0.05
V
LOW Level
VDD = 10V
0.05
0
0.01
0.05
Output Voltage
VDD = 5.0V
4.95
HIGH Level
VDD = 10V
9.95
Noise Immunity
VDD = 5.0V, VO = 3.6V
1.5
2.25
1.5
1.4
(All inputs)
VDD = 10V, VO = 7.2V
3.0
4.5
3.0
2.9
Noise Immunity
VDD = 5.0V, VO = 0.95V
4.95
9.95
5.0
µA
V
4.95
10
V
9.95
3.6
3.5
2.25
V
V
V
3.5
V
(All Inputs)
VDD = 10V, VO = 2.9V
7.1
7.0
4.5
7.0
V
Output Drive Current
VDD = 5.0V, VO = 0.4V, VI = V DD
0.35
0.3
1.0
0.24
mA
N-Channel
VDD = 10V, VO = 0.5V, VI = VDD
1.2
1.0
2.5
0.8
mA
Output Drive Current
VDD = 5.0V, VO = 2.5V, VI = V SS
−1.3
−1.1
−4.0
−0.9
mA
P-Channel
VDD = 10V, VO = 9.5V, VI = VSS
−0.65
−0.55
−2.5
−0.45
mA
Input Current
10
AC Electrical Characteristics
pA
(Note 2)
TA = 25°C and CL = 15 pF and rise and fall times = 20 ns. Typical temperature coefficient for all values of VDD = 0.3%/°C
Symbol
Parameter
Conditions
Typ
Max
Units
tPLH = tPHL
Propagation Delay Time
VDD = 5.0V
35
75
ns
VDD = 10V
20
50
ns
VDD = 5.0V
50
100
ns
VDD = 10V
30
50
Any Input
5
tTLH = tTHL
CI
Transition Time
Input Capacitance
Note 2: AC Parameters are guaranteed by DC correlated testing.
www.fairchildsemi.com
2
Min
ns
pF
CD4007C
AC Test Circuits
Switching Time Waveforms
3
www.fairchildsemi.com
CD4007C
Physical Dimensions inches (millimeters) unless otherwise noted
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow
Package Number M14A
www.fairchildsemi.com
4
14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
Package Number N14A
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
2. A critical component in any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be reawhich, (a) are intended for surgical implant into the
sonably expected to cause the failure of the life support
body, or (b) support or sustain life, and (c) whose failure
device or system, or to affect its safety or effectiveness.
to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the
www.fairchildsemi.com
user.
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
CD4007C Dual Complementary Pair Plus Inverter
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)