AS6C8008A Family
Low Power, 1Mx8 SRAM
Document Title
1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
Date
-. Initial Draft
Aug. 7
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 1 of 13
Remark
Preliminary
2013
AS6C8008A Family
Low Power, 1Mx8 SRAM
FEATURES
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•
•
•
•
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GENERAL DESCRIPTION
The AS6C8008A families are fabricated by Alliance
Memory’s advanced full CMOS process technology.
The families support industrial temperature range
and Chip Scale Package for user flexibility of system design.
The families also supports low data retention voltage
for battery back- up operation with low data retention
current.
Process Technology : 0.15 µm Full CMOS
Organization : 1M x 8 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min.)
Three state output and TTL Compatible
Package Type : 48-FPBGA, 44-TSOP2
PRODUCT FAMILY
Power Dissipation
Product
Operating
Vcc
PKG
Family
Temperature
Range
Speed
Standby
Operating
(ISB1, Typ.)
(ICC1.Max.)
2 A1)
4 mA
Type
Industrial
AS6C8008A-45BIN
2.7 ~ 3.6 V
45 ns
48-FPBGA
o
(-40 ~ 85 C)
AS6C8008A-45ZIN
1)
44-TSOP2
Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 2 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 3 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
PIN CONFIGURATIONS
PIN DESCRIPTION
Name
Function
Name
Function
Chip Select inputs
V
OE
Output Enable input
V
SS
Ground
WE
Write Enable input
NC
No Connection
CS1, CS2
A0~A19
DQ0~DQ7
CC
Power Supply
Address inputs
Data inputs/outputs
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 4 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
ABSOLUTE MAXIMUM RATINGS1)
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Symbol
Ratings
V
-0.2 to 4.0
V
CC
-0.2 to 4.0
V
PD
1.0
W
IN, VOUT
V
Unit
°C
Operating Temperature
TA
-40 to 85
1. Stresses greater than those listed under “nav” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 5 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Supply voltage
V
Ground
V
Input high voltage
V
CC
SS
IH
Min
Typ
Max
Unit
2.7
3.3
3.6
V
0
0
0
V
2.2
-
VCC + 0.22)
V
-
0.6
V
V
3)
IL
Input low voltage
-0.2
o
1. TA= -40 to 85 C, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
VIN=0V
-
8
pF
Input/Output capacitance
C
IO
VIO=0V
-
10
pF
1. Capacitance is sampled, not100% tested
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 6 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
LO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL , VIO=VSS to
VCC
LI
I
Operating power
supply
I
Min Typ Max Unit
V
Input leakage current
Output leakage
current
Test Conditions
I
CC
I
CC1
=V
IN SS
to V
CC
-1
-
1
µA
-1
-
1
µA
-
-
2
mA
-
-
4
mA
45ns
-
-
45
55ns
-
-
35
70ns
-
-
25
IIO=0mA CS1=VIL, CS2=WE=VIH, VIN=VIH or
,
VIL
Cycle time=1 s, 100% duty, IIO=0mA,
CS1<0.2V, CS2>VCC-0.2V, VIN<0.2V or VIN>VCC0.2V
Average operating
current
Cycle time = Min, IIO=0mA, 100% duty,
I
CC2
mA
CS1=VIL, CS2=VIH, VIN=VIL or VIH
Output low voltage
V
OL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
V
OH
IOH = -1.0mA
2.4
-
-
V
Standby Current (TTL)
I
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
>VCC-0.2V, CS2>VCC- (CS
CS10.2V
1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
-
-
0.5
mA
1)
15
µA
Standby Current
(CMOS)
I
SB
LF
Other inputs = 0~VCC
(Typ. condition :
@ 25oC)
VCC=3.3V
(Max. condition : VCC=3.6V @ 85oC)
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
SB1
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 7 of 13
-
2
AS6C8008A Family
Low Power, 1Mx8 SRAM
45ns
Parameter
Symbol
Max
RC
45
-
ns
AA
-
45
ns
,t
-
45
ns
OE
-
30
ns
,t
5
-
ns
OLZ
Read cycle time
t
Address access time
t
Chip select to output
t
CO1 CO2
t
Output enable to valid output
t
LZ1 LZ2
Chip select to low-Z output
t
Output enable to low-Z output
Chip disable to high-Z output
t
Output disable to high-Z output
Output hold from address
change
5
-
ns
t
0
20
ns
OHZ
0
20
ns
10
-
ns
HZ1, HZ2
t
Unit
Min
t
OH
45ns
Parameter
Symbol
t
Write cycle time
Chip select to end of write
Min
Max
WC
45
-
ns
t
45
-
ns
AS
0
-
ns
t
CW1, CW2
t
Address setup time
Unit
Address valid to end of write
t
AW
45
-
ns
Write pulse width
t
45
-
ns
Write recovery time
t
WR
0
-
ns
WHZ
0
20
ns
Write to ouput high-Z
WP
t
Data to write time overlap
t
Data hold from write time
t
DH
0
-
ns
End write to output low-Z
t
OW
5
-
ns
DW
25
ns
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 8 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
TIMING DIAGRAMS
NOTES (READ CYCLE)
1.tHZ1,2 and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to
output voltage levels.
2.At any given temperature and voltage condition, tHZ1,2(Max.) is less than tLZ1,2(Min.) both for a given
device and from device to device interconnection.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 9 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 10 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
V
Data Retention Current
I
Test Condition
ISB1 Test Condition
DR
Min
Typ
Max
Unit
1.5
-
3.6
V
-
-
4
µA
0
-
-
(Chip Disabled)1)
VCC=1.5V, ISB1 Test Condition
DR
1)
(Chip Disabled)
Chip Deselect to Data Retention
Time
t
SDR
See data retention wave
form
t
RDR
Operation Recovery Time
NOTES
1. See the ISB1 measurement condition of datasheet page 5.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 11 of 13
ns
t
RC
-
-
AS6C8008A Family
Low Power, 1Mx8 SRAM
PACKAGE DIMENSION
44 - TSOP2 (0.8mm pin pitch)
Unit : millimeters / inches
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 12 of 13
AS6C8008A Family
Low Power, 1Mx8 SRAM
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
Page 13 of 13