BAS85
Vishay Semiconductors
Small Signal Schottky Barrier Diode
Features
D Integrated protection ring against static
discharge
D Very low forward voltage
Applications
94 9371
Applications where a very low forward voltage
is required
Order Instruction
Type
BAS85
Type Differentiation
VR = 30 V
Ordering Code
BAS85–GS08
Remarks
Tape and Reel
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
tp=10 ms
tp≤1s
VRWM=25 V
Type
Symbol
VR
IFSM
IFRM
IF
IFAV
Tj
Tstg
Value
30
5
300
200
200
125
–65...+150
Unit
V
A
mA
mA
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 85510
Rev. 4, 12-Feb-01
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
RthJA
Value
320
Unit
K/W
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BAS85
Vishay Semiconductors
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25 V, tp=300ms
VR=1V, f=1MHz
Forward voltage
g
Reverse current
Diode capacitance
Type
Symbol
VF
VF
VF
VF
VF
IR
CD
Min
Typ
Max
240
320
400
500
800
2.3
10
Unit
mV
mV
mV
mV
mV
mA
pF
Characteristics (Tj = 25_C unless otherwise specified)
PR – Reverse Power Dissipation ( mW )
200
1000
180
VR = 30 V
IF – Forward Current ( A )
160
140
PR–Limit
@100%VR
120
RthJA=
540K/W
100
80
PR–Limit
@80%VR
60
40
Tj = 150°C
100
Tj = 25°C
10
1
20
0.1
0
25
50
75
100
125
150
Tj – Junction Temperature ( °C )
15822
0
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1.0
1.5
Figure 3. Forward Current vs. Forward Voltage
10
1000
VR = VRRM
f=1MHz
9
CD – Diode Capacitance ( pF )
I R – Reverse Current ( mA )
0.5
VF – Forward Voltage ( V )
15824
100
10
8
7
6
5
4
3
2
1
1
25
15823
50
75
100
125
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
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0
0.1
150
15825
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85510
Rev. 4, 12-Feb-01
BAS85
Vishay Semiconductors
Dimensions in mm
96 12070
Document Number 85510
Rev. 4, 12-Feb-01
www.vishay.com
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BAS85
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
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Document Number 85510
Rev. 4, 12-Feb-01