TLMV3100
Vishay Semiconductors
Bicolor SMD LED
Color
High efficiency red
Green
Type
TLMV3100
Technology
Angle of Half Intensity
±ö
GaAsP on GaP
GaP on GaP
60°
Description
These devices have been designed to meet the increasing demand for surface mounting technology.
The package of the TLM.3100 is the P–LCC–3 (equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and green chip. So
it is possible to choose the color in one device.
Features
D
D
D
D
D
D
SMD LED with exceptional brightness
94 8554
Multicolored
Luminous intensity categorized
Compatible with automatic placement equipment
EIA and ICE standard package
Compatible with infrared, vapor phase and wave
solder processes according to CECC
D Available in 8 mm tape
D Low profile package
D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption
D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Document Number 83042
Rev. A2, 07-Sep-00
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1 (7)
TLMV3100
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLMV3100
Parameter
Reverse voltage per diode
DC forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
IR = 10 mA
Tamb ≤ 60°C
tp ≤ 10 ms
Tamb ≤ 60°C
t≤5s
mounted on PC board
(pad size > 16 mm2)
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
30
0.5
100
100
–40 to +100
–55 to +100
260
400
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
High efficiency red (TLMV3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
VR = 6 V
VR = 0, f = 1 MHz
Type
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
VR = 6 V
VR = 0, f = 1 MHz
Type
Symbol
IV
ld
lp
ϕ
VF
IR
Cj
Min
2.5
612
Symbol
IV
ld
lp
ϕ
VF
IR
Cj
Min
2.5
562
Typ
6
Max
625
635
±60
2.4
3
10
15
Unit
mcd
nm
nm
deg
V
mA
pF
Green (TLMV3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
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2 (7)
Typ
6
Max
575
565
±60
2.4
15
3
10
Unit
mcd
nm
nm
deg
V
mA
pF
Document Number 83042
Rev. A2, 07-Sep-00
TLMV3100
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0°
Iv rel – Relative Luminous Intensity
PV – Power Dissipation ( mW )
125
100
75
50
25
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10904
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs.
Angular Displacement
100
60
High Efficiency Red
IF – Forward Current ( mA )
IF – Forward Current ( mA )
50
40
30
20
10
1
10
0.1
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10905
0
tp/T=0.005
1000
0.01
0.02
0.2
0.5
DC
10
1
0.01
95 9985
5
4
2.0
v60°C
0.05
100
3
Figure 5. Forward Current vs. Forward Voltage
Iv rel – Relative Luminous Intensity
IF – Forward Current ( mA )
Tamb
2
VF – Forward Voltage ( V )
95 9989
Figure 2. Forward Current vs. Ambient Temperature
10000
1
0.1
High Efficiency Red
1.6
1.2
0.8
0.4
0
0.1
1
10
100
tp – Pulse Length ( ms )
Figure 3. Forward Current vs. Pulse Length
Document Number 83042
Rev. A2, 07-Sep-00
0
95 9993
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
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3 (7)
TLMV3100
Vishay Semiconductors
Iv rel – Relative Luminous Intensity
2.4
100
High Efficiency Red
Green
IF – Forward Current ( mA )
2.0
1.6
1.2
0.8
10
1
0.4
0
0.1
10
20
1
95 10321
50
0.5
0.2
100
0.1
200
0.05
500
IF(mA)
0.02
tp/T
Figure 7. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
0
3
4
5
2.0
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
2
VF – Forward Voltage ( V )
Figure 10. Forward Current vs. Forward Voltage
10
High Efficiency Red
1
0.1
Green
1.6
1.2
0.8
0.4
0.01
0
1
100
10
IF – Forward Current ( mA )
95 9995
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10320
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 11. Rel. Luminous Intensity vs.
Ambient Temperature
1.2
2.4
High Efficiency Red
Iv rel– Specific Luminous Intensity
Iv rel – Relative Luminous Intensity
1
95 9986
1.0
0.8
0.6
0.4
0.2
0
590
95 10040
1.6
1.2
0.8
0.4
0
610
630
650
670
690
l – Wavelength ( nm )
Figure 9. Relative Luminous Intensity vs. Wavelength
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4 (7)
Green
2.0
10
95 10263
20
50
100
200
500
IF – Forward Current ( mA )
Figure 12. Specific Luminous Intensity vs. Forward Current
Document Number 83042
Rev. A2, 07-Sep-00
TLMV3100
Vishay Semiconductors
1.2
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
10
Green
1
0.1
Green
1.0
0.8
0.6
0.4
0.2
0.01
1
95 9996
10
0
520
100
IF – Forward Current ( mA )
Figure 13. Relative Luminous Intensity vs. Forward Current
95 10038
540
560
580
600
620
l – Wavelength ( nm )
Figure 14. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11317
Document Number 83042
Rev. A2, 07-Sep-00
www.vishay.com
5 (7)
TLMV3100
Vishay Semiconductors
PCB Layout in mm
95 10967
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6 (7)
Document Number 83042
Rev. A2, 07-Sep-00
TLMV3100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83042
Rev. A2, 07-Sep-00
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