TSAL6100

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TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
with
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
130
± 10
940
800
TSAL6100
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSAL6100
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1.5
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Tamb
- 40 to + 85
°C
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm soldered
on PCB
RthJA
230
K/W
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81009
Rev. 1.5, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
99
TSAL6100
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21211
20 30
40
50
60
70 80
90
100
0
10
21212
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Temperature coefficient of VF
Reverse current
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
MIN.
TYP.
MAX.
UNIT
VF
1.35
1.6
V
VF
2.6
3
V
IF = 1 mA
TKVF
- 1.8
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
80
130
650
mV/K
10
µA
400
mW/sr
25
pF
IF = 1 A, tp = 100 µs
Ie
1000
mW/sr
IF = 100 mA, tp = 20 ms
φe
35
mW
IF = 20 mA
TKφe
- 0.6
%/K
ϕ
± 10
deg
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
940
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
Rise time
IF = 100 mA
tr
800
ns
Fall time
IF = 100 mA
tf
800
ns
method: 63 % encircled energy
d
3.7
mm
Virtual source diameter
Note
Tamb = 25 °C, unless otherwise specified
www.vishay.com
100
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81009
Rev. 1.5, 05-Sep-08
TSAL6100
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
Φ e - Radiant Power (mW)
I F - Forward Current (A)
10 1
I FSM = 1 A (Single Pulse)
t p/T = 0.01
0.05
10 0
0.1
0.5
1.0
10 -1
10 -2
96 11987
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10
1
0.1
10 0
10 2
13602
Fig. 3 - Pulse Forward Current vs. Pulse Duration
104
1.6
103
1.2
102
tP = 100 µs
tP/T = 0.001
10 4
IF = 20 mA
0.8
0.4
101
0
- 10 0 10
100
1
0
2
3
4
VF - Forward Voltage (V)
13600
94 7993
Fig. 4 - Forward Current vs. Forward Voltage
50
100
140
T amb - Ambient Temperature (°C)
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
Φe rel - Relative Radiant Power
I e - Radiant Intensity (mW/sr)
10 1
10 2
10 3
I F - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
Ie rel; Φe rel
IF - Forward Current (mA)
100
100
10
1
1.0
0.75
0.5
0.25
0.1
IF = 100 mA
0
10 0
14438
10 1
10 2
10 3
I F - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81009
Rev. 1.5, 05-Sep-08
890
10 4
14291
940
990
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Power vs. Wavelength
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
101
TSAL6100
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
0°
10°
20°
ϕ - Angular Displacement
Ie rel - Relative Radiant Intensity
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
15989
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
5.8
± 0.15
A
8.7
< 0.7
± 0.3
7.7
(4.4)
± 0.15
R 2.49 (sphere)
35.2
± 0.55
Area not plane
5
+ 0.2
- 0.1
± 0.15
1.5
± 0.25
0.6
0.5
0.5
+ 0.15
- 0.05
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.08-4
Issue: 2; 25.08.98
14436
www.vishay.com
102
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81009
Rev. 1.5, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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