DD211
Version
Issue Date
File Name
Total Pages
: A.001
: 2002/12/03
: SP-DD211-A.001.doc
: 11
A DRIVER, CHARGE PUMP FOR HIGH
FORWARD-VOLTAGE LEDS WITH LOW SUPPLY
VOLTAGE (2.0V~3.3V)
新竹市科學園區展業一路九號七樓之一
SILICON TOUCH TECHNOLOGY INC.
No. 9, 7F-1 Chan-Yeh Road 1 Science-Based Industrial Park
Tel：886-3-5645656 Fax：886-3-5645626
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
DD211
A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE
LEDS WITH LOW SUPPLY VOLTAGE
General Description
DD211 is designed specifically for driving a high forward-voltage LED as a light source with
low supply voltage. Like a charge pump, DD211 doubles the supply voltage, but only requires one
external component, a capacitor. The built-in oscillator generates a 75% duty-cycle and
350kHz-frequency clock. DD211 also consumes little power with CMOS integrated circuits.
DD211 comes in a small die that makes packaging it within a LED module be easy. DD211’s small
package, SOT25 occupies only little area for portable device, such as a handset.
Features
Low supply voltage, 2.0V~3.3V
Only one external component, a capacitor needed
Built-in resistor to limit the output current
Low quiescent supply current
It is easy to package DD211 within a LED module
Applications
High forward-voltage LED Indicators’ drivers
High forward-voltage LED Back lighters for low-voltage wireless handsets
SP-DD211-A.001.doc
-1-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Pad Descriptions
PAD NAME
DESCRIPTIONS
VDD
Power
VSS
Ground
CP
Positive Node of the External Capacitor
CN
Negative Node of the External Capacitor
LEDA
Anode of the External LED
The Block Diagram and The Application Circuit
Power
DD211
VDD
Rin
OSC
Charge Pump
LEDA
hv
VSS
Ground
CN
CP
Ground
_
+
Cext
Absolute Maximum Ratings (Unless otherwise noted, TA = 25 °C )
Characteristic
Symbol
Rating
Unit
VDD - VSS
-0.5 ~ 3.6
V
Output Sourcing Current
IDD
100
mA
Operating Temperature Range
TOPR
-40 ~ 85
°C
Storage Temperature Range
TSTG
-55 ~ 150
°C
Supply Voltage
SP-DD211-A.001.doc
-2-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Recommended Operating Conditions
ITEM
Supply Voltage
External Capacitance
SYMBOL
MIN.
TYP.
MAX.
UNIT
VDD - VSS
2.0
2.5
3.3
V
Cext
-
0.10
-
uF
Electrical Characteristics ( TA= 25°C, VDD= 2.5V )
Characteristic
Operating Current
Output Current for
‘ON’ Cycle
Time-Average
Output Current
Output Voltage for
‘ON’ Cycle
Output Voltage for
‘OFF’ Cycle
Frequency of the
Internal Oscillator
Duty Cycle of the
Internal Oscillator
Symbols
IDD
IFON
IFAVG
VLEDAON
VLEDAOFF
Condition
No external LED,
Cext=0.1uF
VF of external LED=3.5V
Cext=0.1uF
VF of external LED=3.5V
Cext=0.1uF
No external LED,
Cext=0.1uF
No external LED,
Cext=0.1uF
Min.
Typ.
Max.
Unit
-
-
0.75
mA
23
30
37
mA
17.25
22.5
27.75
mA
-
5.0
-
V
-
2.5
-
V
Freq
Cext=0.1uF
-
350
-
kHz
Dt
Cext=0.1uF
-
75
-
%
SP-DD211-A.001.doc
-3-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Functional Descriptions
DD211 is designed to drive a high forward-voltage LED as a light source with low supply
voltage. As Fig.a shown, when the power is on, DD211 will double the supply voltage to drive the
external LED with 75% duty cycle. The built-in resistor of DD211 is used to limit the driving
current.
VLEDA
LEDA
CP
+
Fig.a
Cext
hv
IF
DD211
_
CN
VSS
Ground
Ground
VDD
Power
IFON
IF
2VDD
VLEDA
Dt
(Without LED)
VDD
1/Freq
Test Circuits
As Fig.a shown.
SP-DD211-A.001.doc
-4-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Typical Operating Characteristics
(Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted)
Fig.b
Fig.c
Typical Power Consumption v.s. VF
400
80.00
350
70.00
60.00
Fig.e
250
60.00
200
50.00
150
IFon( mA)
VDD=2.0V
VDD=2.5V
100
Typical IFon v.s. Tj
For VF=2.5V
40.00
VDD=2.0V
30.00
VDD=2.5V
20.00
10.00
0
80
100
60
40
Tj( 'C)
Tj( 'C)
Fig.f
20
0
-40
100
80
60
40
20
0
-20
-40
0.00
-20
Typical Power Consumption v.s. Tj
For VF=3.5V
Fig.g
400
90.00
350
80.00
Typical IFon v.s. Tj
For VF=3.5V
70.00
300
IFon( mA)
VDD=2.0V
250
VDD=2.5V
200
VDD=3.0V
150
VDD=3.3V
100
60.00
VDD=2.0V
50.00
VDD=2.5V
40.00
VDD=3.0V
30.00
VDD=3.3V
80
100
60
40
Tj( 'C)
Tj( 'C)
SP-DD211-A.001.doc
0
-40
100
80
60
40
20
0
-20
0.00
-40
10.00
0
-20
20.00
50
20
Power( mW)
Typical Power Consumption v.s. Tj
For VF=2.5V
50
Power( mW)
6.2
VF( Volt)
VF( Volt)
Fig.d
5
VDD=3.3V
2
6
6.4
5.6
5.2
4.8
4
0.00
4.4
10.00
0
3.6
50
3.2
20.00
2.8
100
2
VDD=3.0V
30.00
5.6
VDD=3.3V
4.4
150
VDD=2.5V
40.00
3.8
VDD=3.0V
VDD=2.0V
50.00
3.2
VDD=2.5V
200
2.6
IFon( mA)
VDD=2.0V
250
2.4
Power( mW)
300
Typical IFon v.s. VF
-5-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Typical Operating Characteristics (Continued)
(Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted)
Typical Power Consumption v.s. Tj
For VF=4.5V
Fig.i
60.00
250
50.00
VDD=3.3V
Tj( 'C)
Fig.j
80
100
60
-40
100
80
60
0.00
40
0
20
10.00
0
VDD=3.0V
20.00
50
-20
VDD=2.5V
30.00
40
VDD=3.3V
100
40.00
0
VDD=3.0V
Typical IFon v.s. Tj
For VF=4.5V
20
VDD=2.5V
150
-20
200
IFon( mA)
300
-40
Power( mW)
Fig.h
Tj( 'C)
Typical Power Consum ption v.s. Tj
For VF=5.5V
Fig.k
160
Typical IFon v.s. Tj
For VF=5.5V
30.00
140
25.00
IFon( mA)
100
VDD=3.0V
80
VDD=3.3V
60
40
20.00
VDD=3.0V
15.00
VDD=3.3V
10.00
5.00
20
80
100
60
40
0
20
-40
80
60
40
0
20
-20
100
Tj( 'C)
Tj( 'C)
SP-DD211-A.001.doc
-20
0.00
0
-40
Power( mW)
120
-6-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
DIE CONFIGURATION
(494.9, 532.9)
VDD
LEDA
(284.15, 452.2) (414.15, 452.2)
CN
VSS
CP
(284.15, 182.6) (414.2, 182.6)
(142.95, 124.05)
(0.0, 0.0)
Unit: um
Die Size: 494.9um * 532.9um
Width of Cut Line: 100um
Die Thickness: 12mil(=300um)
Pad Size: 100um * 100um
SP-DD211-A.001.doc
-7-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical limits, pad
layouts.
WAFER INFORMATION
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 12 mils(≒300um)
Pin Assignment (SOT-25)
CN
CP
VSS
LEDA
VDD
Pin NO.
Pin Name
1
CN
Connected to Negative node of the external capacitor
2
VSS
Ground
3
VDD
Power
4
LEDA
Connected to Anode of the external LED
5
CP
SP-DD211-A.001.doc
Description
Connected to Positive node of the external capacitor
-8-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
Package Specifications (SOT-25)
C
E
H
L
e
θ1
D
A
A2
A1
b
SYMBOL
SP-DD211-A.001.doc
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
A
A1
1.00
0.00
1.10
－
1.30
0.10
A2
b
C
D
E
e
0.70
0.35
0.10
2.70
1.40
－
0.80
0.40
0.15
2.90
1.60
1.90(TYP)
0.90
0.50
0.25
3.10
1.80
－
H
L
2.60
0.37
2.80
－
3.00
－
θ1
1°
5°
9°
-9-
Version：A.001
點晶科技股份有限公司
DD211
SILICON TOUCH TECHNOLOGY INC.
The products listed herein are designed for ordinary electronic applications, such
as electrical appliances, audio-visual equipment, communications devices and so on.
Hence, it is advisable that the devices should not be used in medical instruments,
surgical implants, aerospace machinery, nuclear power control systems,
disaster/crime-prevention equipment and the like. Misusing those products may directly
or indirectly endanger human life, or cause injury and property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the
misusage of the products mentioned above. Anyone who purchases any products
described herein with the above-mentioned intention or with such misused applications
should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its
distributors and all their officers and employees shall defend jointly and severally against
any and all claims and litigation and all damages, cost and expenses associated with such
intention and manipulation.
SP-DD211-A.001.doc
-10-
Version：A.001