Bulletin PD-20741 rev. B 02/06
150EBU02
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Screw Mounting Only
• Lead-Free Plating
trr = 45ns
IF(AV) = 150Amp
VR = 200V
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Max
Units
VR
Parameters
Cathode to Anode Voltage
200
V
IF(AV)
Continuous Forward Current, TC = 116°C
150
A
IFSM
Single Pulse Forward Current, TC = 25°C
1600
IFRM
Maximum Repetitive Forward Current
TJ, TSTG
Operating Junction and Storage Temperatures
380
- 55 to 175
°C
Square Wave, 20kHz
Case Styles
PowIRtab
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150EBU02
Final PD-20741 rev. B 02/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
Breakdown Voltage,
Blocking Voltage
200
VF
Forward Voltage
Reverse Leakage Current
IR
-
-
V
IR = 100µA
-
0.99 1.13
V
IF = 150A
-
0.79 0.90
V
IF = 150A, TJ = 175°C
-
-
50
µA
VR = VR Rated
-
-
2
mA
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
180
-
pF
VR = 200V
LS
Series Inductance
-
3.5
-
nH
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr
Reverse Recovery Time
IRRM
Qrr
Peak Recovery Current
Reverse Recovery Charge
Min Typ Max Units Test Conditions
-
-
45
-
34
-
TJ = 25°C
IF = 150A
-
58
-
TJ = 125°C
-
4.5
-
VR = 160V
diF /dt = 200A/µs
-
9.0
-
-
87
-
nC
-
300
-
ns
A
IF = 1.0A, diF/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
RthJC
Thermal Resistance, Junction to Case
RthCS
Thermal Resistance, Case to Heatsink
Wt
Weight
Min
Typ
Max
Units
0.35
K/W
5.02
g
0.2
0.18
T
Mounting Torque
(oz)
1.2
2.4
N*m
10
20
lbf.in
Mounting Surface, Flat, Smooth and Greased
2
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150EBU02
Bulletin PD-20741 rev. B 02/06
1000
100
T = 175˚C
T J = 175˚C
100
Reverse Current - I R (µA)
Instantaneous Forward Current - I F (A)
1000
125˚C
10
1
25˚C
0.1
0.01
0.001
J
0
50
T = 125˚C
100
150
200
Reverse Voltage - VR (V)
J
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T = 25˚C
J
Junction Capacitance - C T (pF)
10000
10
T J = 25˚C
1000
1
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
1
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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150EBU02
Final PD-20741 rev. B 02/06
250
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
180
160
140
DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80
RMS Limit
200
150
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
100
50
see note (3)
0
60
0
50
100
150
200
0
250
Average Forward Current - IF(AV) (A)
50
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
150
200
250
Fig. 6 - Forward Power Loss Characteristics
70
900
IF = 150A
IF = 75A
60
800
Vr = 160V
Tj = 125˚C
Tj = 25˚C
700
50
600
Qrr ( nC )
trr ( ns )
100
Average Forward Current - IF(AV) (A)
40
30
IF = 150A
IF = 75A
500
400
300
200
20
10
100
Vr = 160V
Tj = 125˚C
Tj = 25˚C
100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
0
100
di F /dt (A/µs )
1000
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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150EBU02
Bulletin PD-20741 rev. B 02/06
Reverse Recovery Circuit
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
D
di
F /dt
dif/dt
ADJUST G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1
di fF/dt
/dt
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
t rr x I RRM
Q rr =
2
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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150EBU02
Final PD-20741 rev. B 02/06
Outline Table
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
150
E
B
U
02
1
2
3
4
5
1
-
Current Rating
2
-
Single Diode
3
-
PowIRtab
4
-
Ultrafast Recovery
5
-
Voltage Rating
(150 = 150A)
(Ultrafast/ Hyperfast only)
(02 = 200V)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/06
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