ISPSD 2016 Preliminary Detailed Technical Program
MONDAY, JUNE 13, 2016
09:00–09:20
Large Hall
Opening Remarks and Announcements
09:20–10:40
Large Hall
A1L-A
Plenary 1
Chairs: Jan Šonský, Oliver Häberlen
Investing in Semiconductors
Brittany Bagley
Electric Vehicle and Expectation for Wide Bandgap Power Device
Masakatsu Hoshi
10:40–11:10
Coffee Break
11:10–12:30
Large Hall
A2L-A
Plenary 2
Chairs: Mutsuhiro Mori, John Shen
Power Semiconductor Devices for Energy Internet
Yufeng Qiu
The Ideal Switch is Not Enough
Johann W. Kolar
12:30–14:00
Lunch Break
14:00–15:40
Large Hall
A3L-A
Gallium Nitride – Technology & Characterization
Chairs: Sameer Pendharkar, Tom Tsai
Through Recessed and Regrowth Gate Technology for Realizing Process Stability of GaN-Gits
Hideyuki Okita, Yasuhiro Uemoto
Quantitative Characterization of the Trapped Charge Profile in GaN HEMTs by Sense Nodes in the DrainExtension Region
Jeroen Croon, Fred Hurkx, Johan Donkers, Saurabh Pandey, Jan Sonsky
Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si
Heterojunction Power Transistors
Xi Tang, Baikui Li, Hanxing Wang, Jin Wei, Gaofei Tang, Zhaofu Zhang, Kevin J. Chen
Experimental Demonstration of Weibull Distributed Failure in P-Type GaN High Electron Mobility
Transistors Under High Forward Bias Stress
Isabella Rossetto, Matteo Meneghini, Oliver Hilt, Eldad Bahat-Treidel, Joachim Wuerfl, Carlo De Santi, Stefano
Dalcanale, Enrico Zanoni, Gaudenzio Meneghesso
15:40-17:40
Small Hall
Coffee & Poster Session
Chair: Alberto Castellazzi
A4P-C
Silicon Carbide (Poster Session)
Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET Under Various Stress Conditions
Kosuke Uchida, Mitsuhiko Sakai, Masaki Furumai, Takashi Tsuno, Yasuki Mikamura, Toru Hiyoshi
10kV SiC MPS Diodes for High Temperature Application
Yifan Jiang, Edward Van Brunt, Woongje Sung, Xiaoqing Song, Siyang Liu, Jayant Baliga, Alex Huang
Influence of Design Parameters on the Short-Circuit Ruggedness of SiC Power MOSFETs
Gianpaolo Romano, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace, Asad Fayyaz, Alberto
Castellazzi
Cosmic Radiation Ruggedness of Si and SiC Power Semiconductors
Christian Felgemacher, Samuel Vasconcelos Araujo, Peter Zacharias, Karl Nesemann, Artjom Gruber
Recent Progress on Diamond Schottky Diode
David Eon, Aboulaye Traoré, Julien Pernot, Etienne Gheeraert
Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss
Huaping Jiang, Jin Wei, Xiaoping Dai, Maolong Ke, Changwei Zheng, Ian Deviny
650V SiC Trench JFET Based Cascode Alternative to Superjunction and GaN Solutions with Ultra-Low RdsA of
0.7mOhm.cm2 with 750V Breakdown Voltage
Peter Alexandrov, Anup Bhalla, Zhongda Li, Xueqing Li
A Trade-Off between Nominal Forward Current Density and Surge Current Capability for 4.5kV SiC MPS
Diodes
Yaren Huang, Tobias Erlbacher, Jonas Büttner, Gerhard Wachutka
Operation of 4H-SiC Schottky Diodes at dV/dt Values Over 700 kV/µs
Edward Van Brunt, Gangyao Wang, Jimmy Liu, Vipindas Pala, Brett Hull, Jim Richmond, John Palmour
Zero Reverse Recovery in SiC and GaN Schottky Diodes – a Comparison
Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi, Florin Udrea, Evelyn Lin, Terry Chien, Max Chen
Performance Tradeoffs for Ultra-High Voltage 4H-SiC N-Channel and P-Channel IGBTs
Sauvik Chowdhury, T. Paul Chow
A4P-D
Gallium Nitride (Poster Session)
First Experimental Demonstration of Solid State Circuit Breaker (SSCB) Using 650V GaN-Based Monolithic
Bidirectional Switch
Z. John Shen, Zhenyu Miao, Aref M. Roshandeh, Peter Moens, Herbert Devleeschouwer, Ali Salih, Balaji
Padmanabhan, Woochul Jeon
Poly-Silicon CMOS-Compatible Gate Module for AlGaN/GaN-on-Silicon Mis-HEMTs for Power Electronics
Applications
Simon Jauss, Stephan Schwaiger, Walter Daves, Oliver Ambacher
Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-Off GaN
MOSFETs with High Faulty Turn-on Immunity
Qi Zhou, Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Wanjun Chen, Bo Zhang
AlGaN/GaN Power Schottky Diodes with Anode Dimension Up to 100 mm on 200 mm Si Substrate
Silvia Lenci, Jie Hu, Nicolo Ronchi, Stefaan Decoutere
Impact of Mg Out-Diffusion and Activation on the P-GaN Gate HEMT Device Performance
Niels Posthuma, Shuzhen You, Hu Liang, Nicolo Ronchi, Xuanwu Kang, Dirk Wellekens, Yoga Saripalli, Stefaan
Decoutere
Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching
Applications
Jin Wei, Huaping Jiang, Qimeng Jiang, Kevin J. Chen
Reverse-Bias Induced Mechanical Stress in AlGaN/GaN Power Diodes
Maire Power, James Pomeroy, Dilip Risbud, Barry Wynne, Mark Gajda, Jan Sonsky, Kenneth Pedrotti, Michael
Uren, Martin Kuball
GaN HEMTs with Multi-Functional P-Diamond Back-Barriers
Yuhao Zhang, Koon Teo, Tomás Palacios
A Novel Normally-Off GaN MISFET with an in-situ AlN Space Layer Using Selective Area Growth
Liang He, Fan Yang, Yiqiang Ni, Yue Zheng, Liuan Li, Zhisheng Wu, Baijun Zhang, Yang Liu
Optimization of Gate Insulator Material for GaN Mis-HEMT
Yueh-Chin Lin, Tai-Wei Lin, Chia-Hsun Wu, Jing-Neng Yao, Wang-Cheng Shih, Kuniyuki Kakushima, Kazuo
Tsutsui, Hiroshi Iwai, Edward-Yi Chang
Quality and Reliability of in-situ Al2O3 MOS Capacitors for GaN-Based Power Devices
Davide Bisi, Silvia Chan, Maher Tahhan, Onur Koksaldi, Stacia Keller, Matteo Meneghini, Gaudenzio
Meneghesso, Enrico Zanoni, Umesh Mishra
Quasi-Bipolar Channel Modulation Instability Analysis for P-GaN Gate High Electron Mobility Transistor
Cen Tang, Xueyang Li, Gang Xie, Kuang Sheng
A4P-E
Packaging & Integration (Poster Session)
Reliability Model Application for Power Devices Using Mechanical Strain Real Time Mapping
Saverio Panarello, Francesca Garescì, Claudia Triolo, Davide Patti, Sebastiano Russo, Salvatore Patanè
Material Evaluation and Development Support Project for High Current SiC Power Module
Tomohiro Iguchi, Akio Takahashi, Hitoshi Habuka
A Novel Superplastic Al-Zn Eutectoid Alloy Lead-Free Solder Joining for SiC Power Semiconductor Devices
Jin Onuki
3-D Planar Packaging for Integrated Double Sided Cooled High Frequency SiC Power Converter
Fei Yang, Fred Wang
Towards Vertical Power Device 3D Packaging on 8-Inch Wafer
Bastien Letowski, Julie Widiez, Nicolas Rouger, Marc Rabarot, William Vandendaele, Bruno Imbert, JeanChristophe Crebier
Flip-Chip Assembly and 3-D Stacking of 1000V LIGBT Dies
Tanya Trajkovic, John Smithels, Nishad Udugampola, Vasantha Pathirana, Tracy Wotherspoon, Florin Udrea
Over Current Breaker Based on the Dual Thyristor Principle
Alexander Würfel, Johannes Adler, Anton Mauder, Nando Kaminski
Hybrid Half-Bridge Package for High Voltage Application
Bassem Mouawad, Jianfeng Li, Alberto Castellazzi, C. Mark Johnson
19:00
Public Spa (Občanská plovárna)
Welcome Reception
TUESDAY, JUNE 14, 2016
08:30–10:10
Large Hall
B1L-A
High Voltage – IGBT 1
Chairs: Thomas Laska, Tomoyuki Zamazali
Demonstration of an Enhanced Trench Bimode Insulated Gate Transistor Et-BIGT
Munaf Rahimo, Maxi Andenna, Liutauras Storasta, Chiara Corvasce, Arnost Kopta
High Switching Speed Trench Diode for 1200V RC-IGBT Based on the Concept of Schottky Controlled
Injection (SC)
Ryohei Gejo, Tsuneo Ogura, Yosuke Maeda, Yuma Matsuoka, Norio Yasuhara, Kazutoshi Nakamura
The Second-Generation 600V RC-IGBT with Optimized FWD
Takuya Yoshida, Tetsuo Takahashi, Kenji Suzuki, Masayoshi Tarutani
Simulation and Experimental Results of 3.3kV Cross Switch "Si-IGBT and SiC-MOSFET" Hybrid
Umamaheswara Reddy Vemulapati, Munaf Rahimo, Andrei Mihaila, Renato Amaral Minamisawa,
Charalampos Papadopoulos, Francisco Canales
08:30–10:10
Small Hall
B1L-B
Low Voltage – LDMOS
Chairs: Dev Alok Girdhar, Chanho Park
A Recessed Gate LDMOSFET for Alleviating HCI Effects
Hiroki Fujii, Takahiro Mori, Takashi Ipposhi
Accumulation Mode Triple Gate SOI LDMOS with Ultralow on-Resistance and Enhanced Transconductance
Jie Wei, Xiaorong Luo, Da Ma, Junfeng Wu, Zhaoji Li, Bo Zhang
NBTI of Buried Oxide Layer Induced Degradation for Thin Layer SOI Field P-Channel LDMOS
Xin Zhou, Ming Qiao, Wen Yang, Yitao He, Zhuo Wang, Zhaoji Li, Bo Zhang
Novel Procedure to Improve LDMOS ESD Characteristics by Optimizing Drain Structure
Kanako Komatsu, Keita Takahashi, Tadaomi Sakurai, Takehito Ikimura, Masaki Sakai, Koji Kimura, Fumitomo
Matsuoka
10:10–10:40
Coffee Break
10:40–12:20
Large Hall
B2L-A
Packaging & Integration – Discrete Devices, Finishing and Characterisation
Chairs: Josef Lutz, Katsuaki Saito
A Compact GaN Bi-Directional Switching Diode with a GaN Bi-Directional Power Switch and an Isolated Gate
Driver
Shuichi Nagai, Yasuhiro Yamada, Miori Hiraiwa, Hiroaki Ueno, Noboru Negoro
Thermal Feedback Blocks for Fast and Reliable Electro-Thermal Circuit Simulation of Power Circuits at
Module Level
Alessandro Magnani, Fabio Di Napoli, Michele Riccio, Pierluigi Guerriero, Lorenzo Codecasa, Vincenzo
D'Alessandro, Giovanni Breglio, Santolo Daliento, Niccolò Rinaldi, Andrea Irace
On-Line Junction Temperature Measurements for Power Cycling Power Modules with High Switching
Frequencies
Julio Bandelero, Jeffrey Ewanchuk, Stefan Mollov
Power Cu Metallization for Future Power Devices – Process Integration Concept and Reliability
Roman Roth, Holger Schulze, Carsten Schaeffer, Frank Hille, Frank Umbach, Guenter Mertens, Nicole Rohn,
Daniel Bolowski
12:20–13:50
Lunch Break
13:50–15:30
Large Hall
B3L-A
High Voltage – IGBT 2
Chairs: Anup Bhalla, Andrea Irace
Side Gate HiGT with Low dv/dt Noise and Low Loss
Masaki Shiraishi, Tomoyasu Furukawa, So Watanabe, Taiga Arai, Mutsuhiro Mori
A 1200 V-Class Fin P-Body IGBT with Ultra-Narrow-Mesas for Low Conduction Loss
Hao Feng, Wentao Yang, Yuichi Onozawa, Takashi Yoshimura, Akira Tamenori, Johnny K.O. Sin
Trench Shielded Gate Concept for Improved Switching Performance with the Low Miller Capacitance
Mutsumi Sawada, Kota Ohi, Yoshihiro Ikura, Yuichi Onozawa, Masahito Otsuki, Yoichi Nabetani
On the Scaling Limit of the Si-IGBTs with Very Narrow Mesa Structure
Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Motoaki Tanizawa, Yasuo Yamaguchi,
Masahide Inuishi
14:40–15:30
Small Hall
B3L-B
Low Voltage – Trench Power MOSFETs
Chairs: Kenya Kobayashi, Yoshinao Miura
Breakdown Voltage Instability Mechanism and Improving Ruggedness in Trench Field Plate Power MOSFET
Tatsuya Nishiwaki, Chikako Yoshioka, Shunsuke Katoh, Kenya Kobayashi, Yoshitaka Hokomoto
A Physically Based Scalable SPICE Model for Shielded-Gate Trench Power MOSFETs
James Victory, Scott Pearson, Stan Benczkowski, Tirthajyoti Sarkar, Hyeongwoo Jang
15:30–16:00
Coffee Break
16:00–17:40
Large Hall
B4L-A
Silicon Carbide – Diodes
Chairs: Anping Zhang, Chih-Fang Huang
A Novel Edge Termination for High Voltage SiC Devices
Andrei Mihaila, Vinoth Sundaramoorthy, Renato Minamisawa, Lars Knoll, Holger Bartolf, Anea Bianda,
Giovanni Alfieri, Munaf Rahimo
Physics of Bipolar, Unipolar and Intermediate Conduction Modes in Silicon Carbide MOSFET Body Diodes
Vipin Pala, Edward Van Brunt, Sei-Hyung Ryu, Brett Hull, Scott Allen, John Palmour
Design and Experimental Demonstration of SiC Super Junction Schottky Diode
Xueqian Zhong, Baozhu Wang, Kuang Sheng
Various Structures of 1200V SiC MPS Diode Models and Their Simulated Surge Current Behavior in
Comparison to Measurement
Shanmuganathan Palanisamy, Susanne Fichtner, Josef Lutz, Thomas Basler, Roland Rupp
16:00–17:40
Small Hall
B4L-B
Integrated Power – Low Voltage
Chairs: Giuseppe Croce, Jun Cai
ESD Failure Mechanism and Optimization for the LDMOS with Low on-Resistance and Large Geometric
Array Used As Output Device
Ran Ye, Siyang Liu, Weifeng Sun, Wei Su, Feng Lin, Guipeng Sun, Zhongyu Lin
A Dual-Active-Bridge DC-DC Converter IC in 0.18µm, 80V BCD with Integrated High-Speed Digital Isolator
and High-Precision Phase-Shift Control
Shahab Poshtkouhi, Miad Fard, Ikjoon Choi, Ray Orr, Christian Cojocaru, Rony Amaya, Olivier Trescases
A 30-V Monolithic Bidirectional Power Switch in a CMOS Technology
Priscilla Boos, Arjan Mels, Stephen Sque
High Performance of PMSM Driver IC Integrated Sensorless and Current Sensing Circuits
Jimin Oh, Sewan Heo, Minki Kim, Jung-Hee Suk, Yilsuk Yang, Jongdae Kim
19:30
Municipal House (Smetana’s Hall)
Gala Dinner “In Art Nouveau”
WEDNESDAY, JUNE 15, 2016
08:30–10:10
Large Hall
C1L-A
Gallium Nitride – Application & Reliability
Chairs: Yasuhiro Uemoto, Frédéric Morancho
GaN Cascode Performance Optimization for High Efficient Power Applications
Haw-Yun Wu
UIS Withstanding Capability and Mechanism of High Voltage GaN-HEMTs
Toshiyuki Naka, Wataru Saito
Impact of VTH Shift on RON in E/D-Mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate
Overdrive
Shu Yang, Yunyou Lu, Shenghou Liu, Hanxing Wang, Cheng Liu, Kevin Chen
Analysis of GaN-HEMTs Switching Characteristics for Power Applications with Compact Model Including
Parasitic Contributions
Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch,
Hans Jürgen Mattausch
10:10–10:40
Coffee Break
10:40–12:20
Large Hall
C2L-A
Silicon Carbide – MOSFETs
Chairs: Yoshiyuki Yonezawa, Nando Kaminski
Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET
Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto
Energy Capability of SiC MOSFETs
Christian Unger, Martin Pfost
Manufacturable and Rugged 1.2 KV SiC MOSFETs Fabricated in High-Volume 150mm CMOS Fab
Sujit Banerjee, Kevin Matocha, Kiran Chatty, John Nowak, Blake Powell, Dave Gutierrez, Chris Hundley
4.5kV Power MOSFET with Boron Doped Gate Dielectric
Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, José Millán, Philippe Godignon
12:20–13:50
Lunch Break
13:50–15:30
Large Hall
C3L-A
High Voltage – Diode & Superjunction
Chairs: Madhur Bobde, Yong Chul Choi
A Novel Edge Termination Structure for Achieving an Ideal Planar Junction Breakdown Voltage
Wentao Yang, Hao Feng, Xiangming Fang, Yuichi Onozawa, Hiroyuki Tanaka, Johnny K.O. Sin
High Voltage Edge Termination for Wide Temperature Range Plus Humidity with Surface Charge Control
(SCC) Technology
Tatsuo Harada, Akito Nishii, Ze Chen, Kazuhiro Shimizu
Novel 600 V Low Reverse Recovery Loss Vertical Pin Diode with Hole Pockets by Bosch Deep Trench
Masanori Tsukuda, Akiyoshi Baba, Yuji Shiba, Ichiro Omura
Experimental Investigation of 650V Super Field-Stop IGBT
Kwang-Hoon Oh
15:30-17:30
Small Hall
Coffee & Poster Session
Chair: Jan Vobecky
C4P-C
High Voltage (Poster Session)
Fast Recovery High-Power P-I-N Diode with Heavily Shorted Cathode for Enhanced Turn-Off Ruggedness in
the Circuits with IGCTs
Libor Pina, Jan Vobecky
A Novel Diode-Clamped CSTBT with Ultra-Low on-State Voltage and Saturation Current
Ping Li, Moufu Kong, Xingbi Chen
Experimentally Demonstrate a Cathode Short MOS-Controlled Thyristor (Cs-MCT) for Single or Repetitive
Pulse Applications
Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Qi Zhou, Zhaoji Li, Bo Zhang
Simple Simulation Approach for the First Trigger Step of SEB (Single Event Burn-Out) Based Upon Physical
Analysis for Si High Voltage Bipolar Device
Yasuhiro Yoshiura, Mitsuharu Tabata, Hiroki Muraoka, Nobutake Taniguchi, Kenji Takakura, Kenji Suzuki,
Masayoshi Tarutani, Katsumi Uryu, Tadaharu Minato
Growth of Short-Circuit Current Filament in MOSFET-Mode IGBTs
Masahiro Tanaka, Akio Nakagawa
Low-Inductive Power Systems to Overcome Short-Circuit Ruggedness Limits
Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Frank Pfirsch, Caspar Leendertz
A Low Loss IGBT with Shallow P-Well to Adjust the Carrier Profiles at the Emitter Side
Zhuo Yang, Jing Zhu, Weifeng Sun, Jincheng Zhou, Long Zhang, Yuanzheng Zhu, Peng Ye, Zongqing Li
Design Criterion of the SuperJunction DMOS for the Low EMI Noise in the Flyback Converter System
Jing Zhu, Zhuo Yang, Weifeng Sun, Yi Sun, Jincheng Zhou, Long Zhang, Yuanzheng Zhu, Peng Ye, Zongqing Li
Short-Circuit Safe Operating Area of Superjunction MOSFETs
Martin Pfost, Christian Unger, Gabriel Cretu, Marius Cenusa, Kevni Büyüktas, Uwe Wahl
IGBT Avalanche Current Filamentation Rtio: Precise Simulations on Mesh and Structure Effect
Yuji Shiba, Masanori Tsukuda, Ichiro Omura
An Electro-Thermal SPICE Model for Reverse Conducting IGBT: Simulation and Experimental Validation
Michele Riccio, Marianna Tedesco, Paolo Mirone, Giuseppe De Falco, Luca Maresca, Giovanni Breglio, Andrea
Irace
RCDC-IGBT Study for Low-Voltage Applications
Johannes Laven, Roman Baburske, Alexander Philippou, Haybat Itani, Matteo Dainese
Tailoring of Field-Stop Layers in Power Devices by Hydrogen-Related Donor Formation
Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Frank Hille, Carsten Schaeffer, Holger
Schulze, Werner Schustereder, Johannes Laven, Manfred Pfaffenlehner
Use of 12” Magnetic Cz Wafers for the Fabrication of IGBTs
Hans-Joachim Schulze, Helmut Oefner, Franz-Josef Niedernostheide, Naveen Ganagona, Moriz Jelinek,
Johannes Georg Laven, Hans-Peter Felsl, Alexander Susiti, Thomas Wübben, Werner Schustereder, Stephan
Voss, Alexander Breymesser, Andre Schwagmann, Michael Stadtmüller
A Comparative Study of Cosmic Radiation Hardness and Electrical Performance of Power Diode Concepts
Frank Hille, Andreas Härtl, Gerald Sölkner, Christoph Weiß, Frank Pfirsch, Holger Schulze, Stefan Aschauer
Experimental Demonstration of the Active Trench Layout Tuned 1200V CSTBTTM for Lower dV/dt Surge and
Turn-on Switching Loss
Kazuya Konishi, Ryu Kamibaba, Mariko Umeyama, Atsushi Narazaki, Masayoshi Tarutani
Direct Photo Emission Motion Observation of Current Filaments in the IGBT Under Avalanche Breakdown
Condition
Koichi Endo, Tomoko Matsudai, Tsuneo Ogura, Takashi Setoya, Shinji Nagamine, Koji Nakamae
4.5kV Bi-Mode Gate Commutated Thyristor Design with High Power Technology and Shallow Diode-Anode
Neophytos Lophitis, Marina Antoniou, Florin Udrea, Umamaheswara Vemulapati, Martin Arnold, Munaf
Rahimo, Jan Vobecky
C4P-D
Low Voltage (Poster Session)
Doping Engineering for Improved Immunity Against BV Softness and BV Shift in Trench Power MOSFET
Shengling Deng, Zia Hossain, Peter Burke
Optimizing the Trade-Off Between the RDS(on) of Power MOSFETs and Linear Mode Performance by Local
Modification of MOSFET Gain
Mo-Huai Chang, Phil Rutter
Investigation on Hot-Carrier-Induced Degradation of STI-nLDMOS with Two-Step-Oxide Process for High
Side Application
Jiaxing Wei, Chunwei Zhang, Siyang Liu, Weifeng Sun, Wei Su, Aijun Zhang, Shulang Ma
60V Rating Split Gate Trench MOSFETs Having Best-in-Class Specific Resistance and Figure-of-Merit
Chanho Park, Sanjay Havanur, Ayman Shibib, Kyle Terrill
3D TCAD Simulation to Optimize the Trench Termination Design for Higher and Robust BVDSS
Zia Hossain, Gourab Sabui, Jim Sellers, Brain Pratt, Ali Salih
Surface Analysis of Smart Power Top Metal: IR Thermal Measurement and Source Potential Mapping
Mounira Berkani, Roberta Ruffilli, Stéphane Lefebvre, Gilles Rostaing, Michele Riccio, Andrea Irace, Philippe
Dupuy
C4P-E
Integrated Power (Poster Session)
Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications
Stephanie Banzhaf, Stephan Schwaiger, Tobias Erlbacher, Anton Bauer, Lothar Frey
Advanced 300mm 130nm BCD Technology from 5V to 85V with Deep-Trench Isolation
Namchil Mun, Shiang Yang Ong, Ke Dong, Jeoung Mo Koo, Verma Purakh Raj, Kun Liu
Gate Sensed Method of Load Current Imbalance Measuring for Paralleling IGBT Devices
Xiao Zeng, Zehong Li, Fashun Yang, Zaoji Li
On the ESD Self-Protection Capability of Integrated UHV Resistor
Hyunchul Nah, Joo-Hyung Kim, Chang-Eun Lee, Tae-Young Jung, Lury Lee, Sang-Gi Lee, Yoon-Jong Lee
A New Compact, Low on Resistance and High Off Isolation High Voltage Analog Switch IC Without Using
High Voltage Power Supplies for Ultrasound Imaging System
Fumiaki Yamashita, Junichi Aizawa, Hironobu Honda
0.13um Modular BCD Technology Enable to Embedding High Density E2PROM, RF and Hall Sensor Suitable
for IoT Application
Junghwan Lee, Kyungho Lee, Inchul Jung, Hyunchul Kim, Heebaeg An, Taejong Lee
0.18µm 100V-Rated BCD with Large Area Power LDMOS with Ultra-Low Effective Specific Resistance
Hanseob Cha, Kyungho Lee, Dongseok Han, Junghwan Lee, Taejong Lee
CMOS SOI Gate Driver with Integrated Optical Supply and Optical Driving for Fast Power Transistors
Nicolas Rouger, Long Than Le, Davy Colin, Jean-Christophe Crébier
Implementation of High Density Embedded 3-Dimensional Mim Capacitor Integrated in Compatible Logic
Process
Jae Ho Hwang
THURSDAY, JUNE 16, 2016
08:30–10:35
Large Hall
D1L-A
Integrated Power – High Voltage
Chairs: Olivier Trescases, Alexander Hölke
Integration of GaN HEMTs Onto Si CMOS by Micro Transfer Printing
Ralf Lerner, Christopher Bower, Salvatore Bonafede, Richard Reiner, Patrick Waltereit
2000V SOI LDMOS with a New Drift Structure for HVICs
Takashi Okawa, Hiroomi Eguchi, Masato Taki, Kimimori Hamada
A Novel High-Voltage Interconnection with Dual Trenches for 500V SOI-LIGBT
Long Zhang, Jing Zhu, Weifeng Sun, Meng Chen, Chao Huang, Feng Zhou, Yan Gu, Sen Zhang, Wei Su
Integrated SOI Gate Driver for 1200V SiC-FET Switches
Iyead Mayya, Reinhard Herzer, Bastian Vogler
Contributions to Dedicated Gate Driver Circuitry for Very High Switching Speed High Temperature Power
Devices
Van-Sang Nguyen, Thanh-Long Le, Farshid Sarrafin, Ngoc-Duc To, Davy Colin, Nicolas Rouger, Pierre Lefranc,
Bruno Allard, Yves Lembeye, Jean-Daniel Arnould, Jean-Christophe Crebier
10:35–11:05
Coffee Break
11:05–12:45
Large Hall
D2L-A
Packaging & Integration – Multi-Chip Modules
Chairs: Kimimori Hamada, Sven Berberich
A New Concept of a High-Current Power Module Allowing Paralleling of Many SiC Devices Assembled
Exploiting Conventional Packaging Technologies
Slavo Kicin, Felix Traub, Samuel Hartmann, Enea Bianda, Christof Bernhard, Stanislav Skibin, Francisco Canales
Development of Heat Sink Integrated Transfer Molded Power Modules with Thermal Conductive Insulating
Sheet
Kei Yamamoto, Hodaka Rokubuichi, Takashi Nishimura, Seiki Hiramatsu, Dai Nakajima, Kiyofumi Kitai, Yoichi
Goto
Novel IGBT Modules with Epoxy Resin Encapsulation and Insulating Metal Baseplate
Yusuke Kaji, Yasumichi Hatanaka, Seiki Hiramatsu, Satoshi Kondo, Shinsuke Asada, Yoshitaka Otsubo
High Performance SiC MOSFET Modules for Industrial Applications
Ljubisa Stevanovic, Brian Rowden, Maja Harfman-Todorovic, Peter Losee, Alexander Bolotnikov, Stacey
Kennerly, Tobias Schuetz, Fabio Carastro, Rajib Datta, Fengfeng Tao, Ravi Raju, Philip Cioffi
12:45–13:45
Lunch Break
13:45–15:00
Large Hall
D3L-A
Silicon Carbide & Diamond – Novel Devices
Chairs: Ranbir Singh, Kung-Yen Lee
Diamond MOSFETs using 2D Hole Gas with 1700V Breakdown Voltage
Hiroshi Kawarada
Experimental Demonstration of SiC Screen Grid Vertical JFET (SiC-SGVJFET) Having a Ultra-Low Crss
Koji Yano, Tsuyoshi Ishikawa, Yasunori Tanaka, Tsutomu Yatsuo, Masayuki Yamamoto
Orthogonal Optimization Design for Structural Parameters of SiC Reversely Switched Dynistor (RSD)
Lin Liang, Yuxiong Shu, Ludan Zhang, Ming Pan
15:00–15:30
Large Hall
Closing Remarks and Charitat Award