Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail AZV831/2 Input/Output CMOS Operational Amplifiers MOS Operational General Description Features The AZV831/AZV832 is single/dual channels rail-to-rail input and output amplifier, which provides a wide input common-mode voltage range and output voltage swing capability for maximum signal swings in low supply voltage applications. The device is fully specified to operate from 1.6V to 5.0V single supply, or ±0.8V and ±2.5V dual supply applications. It features very low supply current dissipation 70µA per channel, which is well suitable for today's low-voltage and/or portable systems. • • • • The AZV831/AZV832 features optimal performance in very low bias current of 1pA, which enables the IC to be used for integrators, photodiode amplifiers, and piezoelectric sensors etc. The device has typical 0.5mV input offset voltage and provides 1MHz bandwidth. • • The AZV831/AZV832 adopts the latest packaging technology to meet the most demanding space-constraint applications. The AZV831 is available in standard SOT-23-5 and SC-70-5 packages. The AZV832 is offered in the traditional MSOP-8 and SOIC-8 packages. Applications SC-70-5 • • • • • • SOT-23-5 Single Supply Voltage Range: 1.6V to 5.5V Ultra-low Input Bias Current: 1pA (Typ.) Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.) Rail-to-Rail Input VCM: 300mV beyond Rails @ VCC=5V Rail-to-Rail Output Swing: 10kΩ Load: 4mV from Rail 1kΩ Load: 25mV from Rail Supply Current: 70µA/Amplifier Unity Gain Stable Gain Bandwidth Product: 1.0MHz Slew Rate: 0.45V/µs @ VCC=5.0V Operation Ambient Temperature Range: -40ºC to 85ºC Sensors Photodiode Amplification Battery-Powered Instrumentation Pulse Blood Oximeter, Glucose Meter SOIC-8 MSOP-8 Figure 1. Package Types of AZV831/AZV832 Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Pin Configuration KS/K Package (SC-70-5/SOT-23-5) OUTPUT 1 VEE 2 IN+ 3 5 VCC 4 IN- AZV831 M/MM Package (SOIC-8/MSOP-8) OUTPUT 1 1 8 VCC IN 1- 2 7 OUTPUT 2 IN 1+ 3 6 IN 2- VEE 4 5 IN 2+ AZV832 Figure 2. Pin Configuration of AZV831/2 (Top View) Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Function Block Diagram 5 VCC 1 OUTPUT + - IN- IN+ Class AB Control 4 3 + - 2 VEE For AZV831 8 VCC + - IN1-/IN2- IN1+/IN2+ Class AB Control 2,6 1,7 OUTPUT1/ OUTPUT2 3,5 + - 4 VEE For AZV832/Amplifier Figure 3. Functional Block Diagram of AZV831/2 Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Ordering Information AZV831/2 - Circuit Type G1: Green Package KS: SC-70-5 (AZV831) K: SOT-23-5 (AZV831) M: SOIC-8 (AZV832) MM: MSOP-8 (AZV832) Blank: Tube TR: Tape & Reel Package Temperature Range SC-70-5 SOT-23-5 -40 to 85°C -40 to 85°C SOIC-8 -40 to 85°C MSOP-8 -40 to 85°C Part Number AZV831KSTR-G1 AZV831KTR-G1 AZV832M-G1 AZV832MTR-G1 AZV832MM-G1 AZV832MMTR-G1 Marking ID L3 G4D 832M-G1 832M-G1 832MM-G1 832MM-G1 Packing Type Tape & Reel Tape & Reel Tube Tape & Reel Tube Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VCC 6.0 V Differential Input Voltage VID 6.0 V Input Voltage VIN -0.3 to VCC+0.5 V Operating Junction Temperature TJ 150 ºC Thermal Resistance (Junction to Ambient) θJA SC-70-5 SOT-23-5 SOIC-8 MSOP-8 270 220 150 200 ºC /W Storage Temperature Range TSTG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) TLEAD 260 ºC ESD (Human Body Model) 4000 V ESD (Machine Model) 300 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operation Ambient Temperature Range Jul. 2012 Symbol Min Max Unit VCC 1.6 5.5 V TA -40 85 ºC Rev. 1. 0 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 1.6V DC Electrical Characteristics VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 Input Bias Current IB 1.0 pA Input Offset Current IOS 1.0 pA Input Common-mode Voltage Range VCM Common-mode Rejection Ratio -0.2 2.5 1.8 mV V CMRR VCM=-0.2V to 1.8V 55 75 dB Large Signal Voltage Gain GV RL=10kΩ to VCC/2, VOUT=0.2V to 1.4V 90 110 dB Input Offset Voltage Drift ∆VOS/∆T 2.0 µV/ °C Output Voltage Swing from Rail VOL/VOH Output Current Sink Source RL=1kΩ to VCC/2 30 50 RL=10kΩ to VCC/2 3 15 ISINK VOUT=VCC 8 10 ISOURCE VOUT=0V 5 8.5 Closed-loop Output Impedance ZOUT f=10kHz, AV=1 Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V Supply Current (Per Amplifier) ICC 66 VOUT=VCC/2, IOUT=0 mV mA 9 Ω 80 dB 70 90 µA 1.6V AC Electrical Characteristics VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Gain Bandwidth Product Symbol GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.32 V/µs Slew Rate (Note 2) SR 1V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, AV=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise Voltage Noise Density THD+N en Note 2: Number specified is the positive slew rate. . Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 1.8V DC Electrical Characteristics VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 Input Bias Current IB 1.0 pA Input Offset Current IOS 1.0 pA Input Common-mode Voltage Range VCM Common-mode Rejection Ratio -0.2 2.5 2.0 mV V CMRR VCM=-0.2V to 2.0V 55 75 dB Large Signal Voltage Gain GV RL=10kΩ to VCC/2, VOUT=0.2V to 1.6V 90 112 dB Input Offset Voltage Drift ∆VOS/∆T 2.0 µV/ °C Output Voltage Swing from Rail VOL/VOH 25 50 RL=10kΩ to VCC/2 3 15 ISINK VOUT=VCC 12 16 ISOURCE VOUT=0V 10 14 Closed-loop Output Impedance ZOUT f=10kHz Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V Supply Current (Per Amplifier) ICC Output Current Sink RL=1kΩ to VCC/2 Source 66 VOUT=VCC/2, IOUT=0 mV mA 9 Ω 80 dB 70 90 µA 1.8V AC Electrical Characteristics VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Gain Bandwidth Product Symbol GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.34 V/µs Slew Rate (Note 2) SR 1V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, AV=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise Voltage Noise Density THD+N en Note 2: Number specified is the positive slew rate. Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 3.0V DC Electrical Characteristics VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 Input Bias Current IB 1.0 pA Input Offset Current IOS 1.0 pA Input Common-mode Voltage Range VCM Common-mode Rejection Ratio Large Signal Voltage Gain CMRR GV Input Offset Voltage Drift ∆VOS/∆T Output Voltage Swing from Rail VOL/VOH 3.3 VCM=-0.3V to 1.8V 62 80 VCM=-0.3V to 3.3V 58 75 90 110 95 115 RL=1kΩ to VCC/2 , VOUT=0.2V to 2.8V RL=10kΩ to VCC/2, VOUT=0.1V to 2.9V V dB µV/ °C 2.0 RL=1kΩ to VCC/2 20 50 RL=10kΩ to VCC/2 3 15 VOUT=VCC 50 60 ISOURCE VOUT=0V 50 65 Closed-loop Output Impedance ZOUT f=10kHz Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V Supply Current (Per Amplifier) ICC Source mV dB ISINK Output Current Sink -0.3 2.5 66 VOUT=VCC/2, IOUT=0 mV mA 9 Ω 80 dB 70 90 µA 3.0V AC Electrical Characteristics VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Gain Bandwidth Product Symbol GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.40 V/µs Slew Rate (Note 2) SR G=1, 2V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, G=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise Voltage Noise Density THD+N en Note 2: Number specified is the positive slew rate. Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 5.0V DC Electrical Characteristics VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 Input Bias Current IB 1.0 pA Input Offset Current IOS 1.0 pA Input Common-mode Voltage Range VCM Common-mode Rejection Ratio Large Signal Voltage Gain CMRR GV Input Offset Voltage Drift ∆VOS/∆T Output Voltage Swing from Rail VOL/VOH Output Current Sink Source -0.3 5.3 VCM=-0.3V to 3.8V 70 85 VCM=-0.3V to 5.3V 65 90 80 92 85 98 RL=1kΩ to VCC/2, VOUT=0.2V to 4.8V RL=10kΩ to VCC/2, VOUT=0.05V to 4.95V 25 50 RL=10kΩ to VCC/2 4 15 150 ISOURCE VOUT=0V 110 185 f=1kHz, AV=1 Supply Current (Per Amplifier) ICC µV/°C RL=1kΩ to VCC/2 100 PSRR V dB 2.0 VOUT=VCC Power Supply Rejection Ratio mV dB ISINK Closed-loop Output Impedance 2.5 VCC=1.6V to 5.0V 66 VOUT=VCC/2, IOUT=0 mV mA 9 Ω 80 dB 70 90 µA 5V AC Electrical Characteristics VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Gain Bandwidth Product Symbol GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.45 V/µs Slew Rate (Note 2) SR 2V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, AV=1, VIN=1VPP RL=10kΩ,CL=100pF -70 dB f=1kHz 27 nV/ Hz THD+N THD+N Voltage Noise Density en Note 2: Number specified is the positive slew rate. Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics 250 260 No Load VOUT=1/2VCC Dual Amplifiers Supply Current (µA) 220 200 Supply Current (µA) 240 VCC=1.8V VCC=1.6V 180 160 200 O TA=85 C 150 O TA=25 C 100 O TA=-40 C VCC=5.0V VCC=3.0V 140 120 Dual Amplifiers VOUT=VCC/2 IOUT=0mA 50 100 0 80 -40 -20 0 20 40 60 80 100 1.5 120 2.0 2.5 3.0 Figure 4. Supply Current vs. Temperature 5.0 5.5 VCC=1.8V 0 0 Input Offset Voltage (mV) Input Offset Voltage (mV) 4.5 1 VCC=1.6V -1 -2 -3 -4 o TA=-40 C o TA=25 C -5 0.0 0.5 1.0 -1 -2 -3 o -4 TA=-40 C o TA=25 C -5 o TA=85 C 1.5 -6 -0.5 2.0 Input Common Mode Voltage (V) o TA=85 C 0.0 0.5 1.0 1.5 2.0 2.5 Input Common Mode Voltage (V) Figure 6. Input Offset Voltage vs. Input Common Mode Voltage Jul. 2012 4.0 Figure 5. Supply Current vs. Supply Voltage 1 -6 -0.5 3.5 Supply Voltage (V) O Temperature ( C) Figure 7. Input Offset Voltage vs. Input Common Mode Voltage Rev. 1. 0 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) 1 4 VCC=3.0V VCC=5.0V 0 Input Offset Voltage (mV) Input Offset Voltage (mV) 2 -1 -2 -3 -4 o TA=-40 C o TA=25 C -5 0 -2 o TA=-40 C -4 o TA=25 C o TA=85 C -6 0 1 2 3 o TA=85 C -6 4 Input Common Mode Voltage (V) Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 1000 100 10 Sink Current Source Current 0.1 1 3 4 5 6 VCC=1.8V, VEE=0V 100 10 Sink Current Source Current 1 10 Output Current (mA) 0.1 1 10 Output Current (mA) Figure 10. Output Voltage vs. Output Current Jul. 2012 2 Figure 9. Input Offset Voltage vs. Input Common Mode Voltage VCC=1.6V, VEE=0V 1 1 Input Common Mode Voltage (V) Figure 8. Input Offset Voltage vs. Input Common Mode Voltage 1000 0 Figure 11. Output Voltage vs. Output Current Rev. 1. 0 BCD Semiconductor Manufacturing Limited 11 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) 1000 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 10000 VCC=3.0V, VEE=0V 100 10 Sink Current Source Current 1 0.01 0.1 1 VCC=5.0V, VEE=0V 1000 100 10 Sink Current Source Current 1 0.01 10 0.1 1 Output Current (mA) Figure 12. Output Voltage vs. Output Current Output Short Circuit Current (Source) (mA) Output Short Circuit Current (Sink) (mA) 200 VCC=1.6V VCC=1.8V VCC=3.0V VCC=5.0V VEE=0V VOUT short to VCC 120 100 80 60 40 20 0 -40 -20 0 20 40 100 Figure 13. Output Voltage vs. Output Current 160 140 10 Output Current (mA) 60 80 100 o Temperature ( C) 180 VEE=0V VOUT short to VEE 160 140 VCC=1.6V VCC=1.8V VCC=3.0V VCC=5.0V 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 o Temperature ( C) Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 12 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) 160 Output Short Circuit Current (Source) (mA) Output Short Circuit Current (Sink) (mA) 120 VEE=0V VOUT short to VCC 100 80 60 40 20 VEE=0V VOUT short to VEE 140 120 100 80 60 40 20 0 0 1 2 3 4 1 5 2 3 Figure 16. Output Short Circuit Current vs. Supply Voltage 27 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) RL=10kΩ 3.5 Positive Swing Negative Swing 3.0 2.5 2.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 RL=1kΩ 26 Positive Swing Negative Swing 25 24 23 22 21 20 0.8 2.6 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Dual Supply Voltage (V) Dual Supply Voltage (V) Figure 18. Output Voltage Swing vs. Supply Voltage Jul. 2012 5 Figure 17. Output Short Circuit Current vs. Supply Voltage 4.0 1.5 0.8 4 Supply Voltage (V) Supply Voltage (V) Figure 19. Output Voltage Swing vs. Supply Voltage Rev. 1. 0 BCD Semiconductor Manufacturing Limited 13 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) 48 10 VCC=0.8V,VEE=-0.8V VCC=2.5V,VEE=-2.5V VCC=0.8V,VEE=-0.8V VCC=2.5V,VEE=-2.5V 36 RL=1kΩ 32 28 Positive Swing 24 Negative Swing 20 16 12 -40 -20 0 20 40 60 80 7 RL=10kΩ 6 5 4 Negative Swing 3 2 Positive Swing 1 0 -40 100 -20 o 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Figure 20. Output Voltage Swing vs. Temperature Figure 21. Output Voltage Swing vs. Temperature 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 10 0 40 30 VCC=0.8V, VEE=-0.8V -10 -20 10k 100k Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V 8 0 -10 10 -20 40 30 VCC=0.8V, VEE=-0.8V RL=100kΩ 20 10 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 22. Gain and Phase vs. Frequency with Resistive Load Jul. 2012 CL=100pF CL=200pF CL=300pF 10 20 1M 50 20 Phase Margin (Degree) 40 9 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 44 Figure 23. Gain and Phase vs. Frequency with Capacitive Load Rev. 1. 0 BCD Semiconductor Manufacturing Limited 14 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 0 40 30 VCC=0.8V, VEE=-0.8V RL=10kΩ -10 -20 10k 100k 10 0 20 -10 10 -20 40 30 20 10 1M 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 24. Gain and Phase vs. Frequency with Capacitive Load Figure 25. Gain and Phase vs. Frequency with Resistive Load 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF VCC=0.9V, VEE=-0.9V RL=100kΩ 10 0 -10 40 30 -20 10k 100k 50 20 CL=100pF CL=200pF CL=300pF 10 0 20 -10 10 -20 40 30 VCC=0.9V, VEE=-0.9V RL=10kΩ 20 10 10k 1M 100k 1M Frequency (Hz) Frequency (Hz) Figure 26. Gain and Phase vs. Frequency with Capacitive Load Jul. 2012 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω VCC=0.9V, VEE=-0.9V Phase Margin (Degree) 10 Open Loop Gain (dB) CL=100pF CL=200pF CL=300pF 20 Phase Margin (Degree) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) Figure 27. Gain and Phase vs. Frequency with Capacitive Load Rev. 1. 0 BCD Semiconductor Manufacturing Limited 15 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 0 40 30 VCC=1.5V, VEE=-1.5V -10 -20 10k 100k 20 50 CL=100pF CL=200pF CL=300pF 10 0 20 -10 10 -20 1M 30 VCC=1.5V, VEE=-1.5V RL=100kΩ 20 10 10k 100k Frequency (Hz) 1M Frequency (Hz) Figure 28. Gain and Phase vs. Frequency with Resistive Load Figure 29. Gain and Phase vs. Frequency with Capacitive Load 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF 10 0 40 30 VCC=1.5V, VEE=-1.5V RL=10kΩ -10 -20 10k 100k 20 0 -10 10 -20 1M 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 10 20 40 30 VCC=2.5V, VEE=-2.5V 20 10 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 30. Gain and Phase vs. Frequency with Capacitive Load Jul. 2012 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) 40 Phase Margin (Degree) 10 Open Loop Gain (dB) 20 Phase Margin (Degree) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) Figure 31. Gain and Phase vs. Frequency with Resistive Load Rev. 1. 0 BCD Semiconductor Manufacturing Limited 16 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF 10 0 40 30 VCC=2.5V, VEE=-2.5V RL=100kΩ -10 -20 10k 100k 20 10 0 20 -10 10 -20 50 CL=100pF CL=200pF CL=300pF 40 30 VCC=2.5V, VEE=-2.5V RL=10kΩ Phase Margin (Degree) 100 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) 20 10 1M 10k 100k 1M Frequency (Hz) Frequency (Hz) Figure 32. Gain and Phase vs. Frequency with Capacitive Load Figure 33. Gain and Phase vs. Frequency with Capacitive Load 1000 10 100 1 THD+N (%) Output Impedance (Ω) VCC=1.6V to 5V VEE=0V 10 AV=1 AV=10 AV=100 1 100 1k 10k AV=1, RL=10kΩ, CL=100pF VCC=0.8V,VEE=-0.8V VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V VCC=2.5V,VEE=-2.5V 0.1 0.01 1E-3 0.01 100k 0.1 1 Frequency (Hz) Output Voltage (V) Figure 34. Output Impedance vs. Frequency Figure 35. THD+N vs. Output Voltage Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 17 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) 1 Bandwidth<10Hz to 22kHz Input Voltage Noise (V/ Hz) 0.1 THD+N (%) VCC=5.0V, VEE=0V, AV=1 VCC=0.8V, VEE=-0.8V VCC=0.9V, VEE=-0.9V VCC=1.5V, VEE=-1.5V VCC=2.5V, VEE=-2.5V 0.01 1E-3 100n VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF 100 1k 10n 10k Frequency (Hz) VCC=1.6V VEE=0V VOUT 50mV/div 10k Figure 37. Input Voltage Noise Density VCC=1.8V VEE=0V VIN 50mV/div VOUT 50mV/div CL=100pF, RL=100kΩ, AV=1 CL=100pF, RL=100kΩ, AV=1 Time (2µs/div) Time (2µs/div) Figure 38. Small Signal Pulse Response Jul. 2012 1k Frequency (Hz) Figure 36. THD+N vs. Frequency VIN 50mV/div 100 Figure 39. Small Signal Pulse Response Rev. 1. 0 BCD Semiconductor Manufacturing Limited 18 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 50mV/div VOUT 50mV/div VIN 50mV/div VOUT 50mV/div CL=100pF, RL=100kΩ, AV=1 CL=100pF, RL=100kΩ, AV=1 Time (2µs/div) Time (2µs/div) Figure 40. Small Signal Pulse Response VCC=1.6V VEE=0V VIN 500mV/div VOUT 500mV/div Figure 41. Small Signal Pulse Response VCC=1.8V VEE=0V VIN 500mV/div VOUT 500mV/div CL=200pF, RL=100kΩ, AV=1 CL=200pF, RL=100kΩ, AV=1 Time (10µs/div) Time (10µs/div) Figure 42. Large Signal Pulse Response Jul. 2012 VCC=5.0V VEE=0V Figure 43. Large Signal Pulse Response Rev. 1. 0 BCD Semiconductor Manufacturing Limited 19 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 1V/div VCC=5.0V VEE=0V VIN 2V/div VOUT 1V/div VOUT 2V/div CL=200pF, RL=100kΩ, AV=1 CL=200pF, RL=100kΩ, AV=1 Time (10µs/div) Time (10µs/div) Figure 44. Large Signal Pulse Response Figure 45. Large Signal Pulse Response VCC=1.6V VEE=0V VIN 500mV/div VIN 500mV/div VOUT 500mV/div VOUT 500mV/div CL=200pF, RL=10kΩ, AV=1 Jul. 2012 VCC=1.8V VEE=0V CL=200pF, RL=10kΩ, AV=1 Time (10µs/div) Time (10µs/div) Figure 46. Large Signal Pulse Response Figure 47. Large Signal Pulse Response Rev. 1. 0 BCD Semiconductor Manufacturing Limited 20 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 1V/div VIN 2V/div VOUT 1V/div VOUT 2V/div CL=200pF, RL=10kΩ, AV=1 CL=200pF, RL=10kΩ, AV=1 Time (10µs/div) Time (10µs/div) Figure 48. Large Signal Pulse Response VIN VCC=2.5V VEE=-2.5V VIN 1V/div Figure 49. Large Signal Pulse Response VCC=2.5V VEE=-2.5V VIN 50mV/div VOUT VOUT 1V/div VOUT 1V/div CL=100pF, RL=100kΩ, AV=-50 VIN=0 to -100mV f=1kHz, RL=10kΩ, VIN=6VPP, AV=1 Time (200µs/div) Time (20µs/div) Figure 50. No Phase Reversal Jul. 2012 VCC=5.0V VEE=0V Figure 51. Overload Recovery Time Rev. 1. 0 BCD Semiconductor Manufacturing Limited 21 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Typical Performance Characteristics (Continued) VIN 50mV/div VCC=2.5V VEE=-2.5V VOUT 1V/div CL=100pF, RL=100kΩ, AV =-50, VIN=0 to -100mV Time (20µs/div) Figure 52. Overload Recovery Time Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 22 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Mechanical Dimensions SC-70-5 Unit: mm(inch) 0° 2.000(0.079) 8° 2.200(0.087) 0.150(0.006) 0.350(0.014) 0.200(0.008) 1.150(0.045) 1.350(0.053) 2.150(0.085) 2.450(0.096) 0.260(0.010) 0.460(0.018) 0.525(0.021)REF 0.650(0.026)TYP 0.000(0.000) 0.100(0.004) 1.200(0.047) 1.400(0.055) 0.080(0.003) 0.150(0.006) 0.900(0.035) 0.900(0.035) 1.000(0.039) 1.100(0.043) Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 23 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 1.500(0.059) 1.700(0.067) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 24 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Mechanical Dimensions (Continued) SOIC-8 Jul. 2012 Rev. 1. 0 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 25 Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers AZV831/2 Mechanical Dimensions (Continued) Jul. 2012 2.900(0.114) 3.100(0.122) Unit: mm(inch) 0.200(0.008) 0.000(0.000) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) MSOP-8 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 26 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788