VMMK-3313
15 - 33 GHz Directional Detector in SMT Package
Data Sheet
Description
Features
The VMMK-3313 is a small and easy-to-use, broadband,
directional detector operating in various frequency bands
from 15 to 33 GHz with typical insertion loss of 0.5 dB. It is
housed in the Avago Technologies’ industry-leading and
revolutionary sub-miniature chip scale package (GaAsCap
wafer scale leadless package) which is small and ultra thin
yet can be handled and placed with standard 0402 pick
and place assembly equipment. The VMMK-3313 provides
a wide detecting power level from -5 to +30 dBm with
excellent input and output return losses. A typical of 15 dB
directivity is provided, and the detector requires only 1.5 V
DC biasing with small current drawn of 0.17 mA.
• 1 x 0.5 mm surface mount package
WLP0402, 1 mm x 0.5 mm x 0.25 mm
• Insertion Loss: 0.5 dB
• Ultrathin (0.25 mm)
• Wide frequency range: 15 to 33 GHz
• Wide dynamic range
• Low Insertion loss
• Directivity: 11-18 dB typ.
• In and output match: 50 ohm
Specifications (24 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω)
• Bias Current: 0.17 mA typical
• Detector output offset voltage: 62 mV typical
• Detector Output voltage at +20 dBm: 1070 mV typical
TY
Applications
• Point-to-Point Radio
• Monitoring Power Amplifier Output Power
Pin Connections (Top View)
Input/
Vbias
Input/
Vbias
Note:
“T” = Device Code
“Y” = Month Code
TY
Detector
• Power Control Loop Detector
Output/
Vdet
Output/
Vdet
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Electrical Specifications
Table 1. Absolute Maximum Rating (1)
Sym
Parameters/Condition
Unit
Absolute Max
Vbias
Bias Voltage (RF Input)
V
2
Ibias
Bias Current
mA
1
Pin, max
CW RF Input Power (RF Input) (2)
dBm
+31
Tch
Max Channel Temperature
°C
+150
Tstg
Storage Temperature
°C
+150
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. With the DC (typical bias) and RF applied to the device at board temperature, Tb = 25° C
Table 2. DC and RF Specifications
TA = 25° C, Freq = 24 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω unless otherwise specified
Symbol
Parameters / Condition
Unit
Min
Typical
Max
Ibias (1)
Bias Current
mA
0.11
0.17
0.25
I.L. (1)
Insertion Loss
at 15 GHz
at 24 GHz
at 33 GHz
dB
IRL (1)
Input Return Loss
dB
20
ORL (1)
Output Return Loss
dB
20
Dir (2)
Directivity
at 15 GHz
at 24 GHz
at 33 GHz
dB
Voffset (1,3)
Detector Output Offset Voltage
mV
45
61
75
Vdet (4)
Detector Output Voltage at +20 dBm
mV
0.90
1.07
1.22
0.3
0.5
0.7
11
18
12
Notes
1. Measured data obtained from wafer-probing, losses from measurement system de-embedded from final data, Vbias = 1.5 V applied through a
broadband bias tee.
2. Measured by reversing the detector and applying RF power to the output port. Directivity is defined as the difference in dB between the power
applied in the forward direction and the power required in the reverse direction to produce the same Vdet voltage.
3. Voffset is measured with RF input power turned off.
4. Vdet is measured with +20 dBm RF input power at 22 GHz.
2
Product Consistency Distribution Charts at 24 GHz, Vbias = 1.5 V
LSL
0.11
USL
0.13
0.15
0.17
0.19
0.21
0.23
0.25
Ibias: Mean = 0.17 mA, LSL = 0.11 mA, USL = 0.25 mA
LSL
LSL
USL
50
60
70
Voffset: Mean = 61 mV, LSL = 45 mV, USL = 75 mV
USL
Notes:
Distribution data sample sized is based on at least 36 Kpcs taken from
MPV lots.
Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
900
1000
1100
1200
Vdet_On @ Pin = +20 dBm: Mean = 1.07 V, LSL = 0.9 V, USL = 1.22 V
3
VMMK-3313 Typical Performance
S-parameter data obtained using 300 mm G-S-G probe substrate; bias was brought in via broadband bias tees. Power vs.
Vdet data obtained using CPW PCB (Fig.8). Losses calibrated out to the package reference plane.
(TA = 25° C, Vbias = 1.5 V, Ibias = 0.14 mA, Zin = Zout = 50 Ω unless otherwise specified)
0.0
-0.2
1
S21 (dB)
Output DC Voltage (V)
10
0.1
-0.6
15 GHz
24 GHz
33 GHz
0.01
-10
-5
0
5
10
15
Pin (dBm)
20
25
-0.4
-0.8
30
Figure 1. Vdet vs. Input Power
10
15
20
25
Frequency (GHz)
30
35
30
35
Figure 2. Insertion Loss vs. Frequency
0
0
-5
-10
S22 (dB)
S11 (dB)
-10
-15
-20
-20
-30
-25
-30
10
15
20
25
Frequency (GHz)
30
-40
35
Figure 3. Input Return Loss
Output DC Voltage (V)
Output DC Voltage (V)
20
25
Frequency (GHz)
10
1
0.1
25° C
85° C
-40° C
-10
-5
0
5
10
15
Pin (dBm)
Figure 5. Pin vs. Vdet Over Temperature at 24 GHz
4
15
Figure 4. Output Return Loss
10
0.01
10
20
25
30
1
0.1
0.01
-10
1.5 V
1.2 V
1.8 V
-5
0
5
10
15
Pin (dBm)
Figure 6. Pin vs. Vdet Over Vbias at 24 GHz
20
25
30
Typical Scattering Parameters
Data obtained with 300 mm G-S-G probing on 0.016 inch thick PCB substrate, broadband bias tees, losses calibrated out
to the package reference plane. TA = 25° C, Zin = Zout = 50 Ω.
Freq
GHz
S11
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
2.0
-16.143
0.156
-90.494
-0.192
0.978
-0.747
-0.186
0.979
-0.679
-16.016
0.158
-93.644
3.0
-19.760
0.103
-96.650
-0.132
0.985
-8.728
-0.124
0.986
-8.670
-19.659
0.104
-105.358
4.0
-22.639
0.074
-100.139
-0.128
0.985
-15.231
-0.116
0.987
-15.156
-22.441
0.076
-116.420
5.0
-25.368
0.054
-99.264
-0.122
0.986
-21.092
-0.115
0.987
-21.017
-25.083
0.056
-130.972
6.0
-28.427
0.038
-93.825
-0.126
0.986
-26.725
-0.126
0.986
-26.669
-27.453
0.042
-151.611
7.0
-31.502
0.027
-78.538
-0.139
0.984
-32.188
-0.129
0.985
-32.126
-29.736
0.033
-178.623
8.0
-32.918
0.023
-48.363
-0.145
0.983
-37.503
-0.144
0.984
-37.516
-30.201
0.031
146.185
9.0
-31.634
0.026
-16.396
-0.169
0.981
-42.803
-0.155
0.982
-42.811
-29.020
0.035
115.496
10.0
-28.336
0.038
1.025
-0.174
0.980
-48.135
-0.171
0.981
-48.095
-26.897
0.045
90.525
11.0
-25.713
0.052
6.348
-0.191
0.978
-53.426
-0.185
0.979
-53.345
-24.672
0.058
75.623
12.0
-23.583
0.066
7.497
-0.204
0.977
-58.602
-0.208
0.976
-58.544
-23.312
0.068
62.771
13.0
-22.015
0.079
7.691
-0.225
0.974
-63.871
-0.226
0.974
-63.782
-21.841
0.081
52.793
14.0
-21.100
0.088
7.152
-0.247
0.972
-69.068
-0.240
0.973
-69.014
-21.002
0.089
44.150
15.0
-20.464
0.095
5.699
-0.261
0.970
-74.298
-0.261
0.970
-74.185
-20.612
0.093
34.963
16.0
-19.837
0.102
4.621
-0.288
0.967
-79.432
-0.279
0.968
-79.412
-20.070
0.099
26.214
17.0
-20.229
0.097
4.889
-0.302
0.966
-84.664
-0.300
0.966
-84.646
-20.473
0.095
19.684
18.0
-20.427
0.095
5.722
-0.311
0.965
-89.942
-0.308
0.965
-89.871
-21.130
0.088
12.443
19.0
-20.346
0.096
4.424
-0.331
0.963
-95.142
-0.334
0.962
-95.072
-21.190
0.087
3.542
20.0
-21.391
0.085
7.308
-0.346
0.961
-100.462
-0.345
0.961
-100.384
-22.651
0.074
-0.777
21.0
-22.441
0.076
10.427
-0.361
0.959
-105.667
-0.355
0.960
-105.641
-24.716
0.058
-5.533
22.0
-23.491
0.067
10.306
-0.377
0.958
-110.947
-0.376
0.958
-110.951
-25.900
0.051
-11.559
23.0
-25.304
0.054
23.895
-0.401
0.955
-116.285
-0.401
0.955
-116.288
-29.473
0.034
-2.535
24.0
-26.448
0.048
41.694
-0.416
0.953
-121.674
-0.419
0.953
-121.646
-34.943
0.018
31.366
25.0
-28.427
0.038
51.641
-0.453
0.949
-127.022
-0.455
0.949
-127.007
-35.189
0.017
74.893
26.0
-27.787
0.041
75.394
-0.472
0.947
-132.447
-0.476
0.947
-132.366
-29.168
0.035
83.707
27.0
-26.707
0.046
90.267
-0.505
0.944
-137.920
-0.505
0.944
-137.910
-25.547
0.053
87.920
28.0
-27.872
0.040
108.771
-0.517
0.942
-143.371
-0.519
0.942
-143.334
-25.161
0.055
86.868
29.0
-27.131
0.044
110.745
-0.550
0.939
-148.819
-0.546
0.939
-148.784
-22.722
0.073
68.734
30.0
-26.430
0.048
123.049
-0.576
0.936
-154.323
-0.582
0.935
-154.356
-21.650
0.083
61.896
31.0
-27.171
0.044
141.654
-0.614
0.932
-160.111
-0.612
0.932
-160.110
-21.300
0.086
51.421
32.0
-27.702
0.041
157.497
-0.643
0.929
-165.730
-0.640
0.929
-165.797
-20.211
0.098
37.365
33.0
-27.412
0.043
175.942
-0.665
0.926
-171.312
-0.664
0.926
-171.290
-19.404
0.107
18.402
34.0
-23.414
0.068
-159.594
-0.722
0.920
-177.364
-0.715
0.921
-177.358
-19.437
0.107
-1.031
35.0
-21.351
0.086
-142.243
-0.726
0.920
176.755
-0.724
0.920
176.769
-18.062
0.125
-17.686
36.0
-19.164
0.110
-145.966
-0.812
0.911
170.964
-0.814
0.911
171.148
-17.329
0.136
-32.214
37.0
-16.815
0.144
-142.957
-0.866
0.905
164.889
-0.887
0.903
165.274
-16.340
0.152
-48.123
38.0
-15.080
0.176
-138.352
-1.004
0.891
159.328
-0.935
0.898
159.556
-15.396
0.170
-62.771
39.0
-14.239
0.194
-142.217
-1.047
0.886
153.991
-1.022
0.889
154.016
-14.624
0.186
-72.930
40.0
-13.011
0.224
-143.357
-1.124
0.879
148.264
-1.084
0.883
148.305
-13.936
0.201
-85.368
5
S21
S12
S22
VMMK-3313 Biasing Information
Biasing and Operation
The VMMK-3313 is a 3 terminal device consisting of a
“through” 50 ohm line connecting directly between the RF
Input and RF Output ports and a directional coupler with a
full wave detector that provides a DC output proportional
to RF power input. As with any high frequency device,
good grounding is required on the common port under
the device for it to produce low loss in the “through” mode.
A suggested PCB layout with appropriate grounding will
be cover later in this application section.
values chosen for the frequency of operation. All SMT
components are recommended to be no larger than 0402
size. Nominal bias voltage of 1.5 V or 0.14 mA is required
for proper operation. Biasing on the input is by a way of a
large value resistor R1. Its value can be computed using
the following equation:
With only 3 terminals available, the DC bias and detected
voltage are internally DC coupled to the input and output
terminals respectively. The key to successful operation
of the VMMK-3313 is the use of low loss bias decoupling
networks connected to both the RF Input and the RF
Output ports. Figure 7 shows a simple biasing circuit.
Detected DC voltage is extracted on the output by a way
of a large value resistor R2, in the range of 10 kΩ. Bypassing
capacitors C3 and C4 are needed to prevent RF influence
on the dc lines. Suggested value for bypass capacitors is
1 pF.
The bias decoupling networks provide a low loss AC
coupled RF path to the device, a means of biasing the
device on the input, and a means of extracting the detected
voltage on the output of the device. The detector needs
2 DC blocking caps, C1 and C2, on the input and output
ports. This can be accomplished by printing coupled lines
on the PCB or using SMT capacitors (ATC 600 series) with
C1
C2
RFin
RFout
R1
where Vb is the supply voltage.
At zero RF input power, and at 1.5 V supply bias, a nominal
63 mV offset voltage appears at the detected output port.
The internal output source resistance for the detector is
approximately 20 kΩ. Resistor R3 can be used as an
external load resistor for the detector. Its value can be
optimized for the desired Vout vs. RF input curve.
Figure 8 shows a VMMK-3313 characterization PCB used
to obtain the Vdet vs. Input Power characterization data
from 15 to 33 GHz. For ease in broadband characterization, two external 45 MHz – 50 GHz Bias Networks (HP
11612B) were used.
R2
Vb
Vdet
detector
bias
C3
C4
Component
Description
C1, C2
0.2 pF to 0.4 pF
(ATC 600 or printed coupled lines)
R1
(Vb -1.5) / 0.00014 Ω
R2
10 kΩ
C3, C4
1 pF
R3
External load resistor (optional)
Figure 7. Biasing the VMMK-3313 Detector Module
6
R1 = (Vb -1.5)/0.00014
R3
Figure 8. VMMK-3313 Characterization Board
S Parameter Measurements
ESD Precautions
The S-parameters are measured on a 0.016 inch thick
RO4003 printed circuit test board, using 300 mm G-S-G
(ground signal ground) probes. Coplanar waveguide is
used to provide a smooth transition form the probes to
the device under test. The presence of the ground plane
on top of the test board results in excellent grounding
at the device under test. A combination of SOLT (Short –
Open – Load – Thru) and TRL (Thru – Reflect – Line) calibration techniques are used to correct for the effects of
the test board, resulting in accurate device S parameters.
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD
approved carrier is used when die are transported from
one destination to another. Personal grounding is to be
worn at all times when handling these devices. For more
detail, refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.
Package and Assembly Notes
For detailed description of the device package and
assembly notes, please refer to Application Note 5378.
Ordering Information
Part Number
Devices Per
Container
Container
VMMK-3313-BLKG
100
Antistatic Bag
VMMK-3313-TR1G
5000
7” Reel
VMMK-3313-TR2G
1000
7” Reel
Package Dimension Outline
D
E
A
Dimensions
Symbol
Min (mm)
Max (mm)
E
0.500
0.585
D
1.004
1.085
A
0.225
0.275
Note:
All dimensions are in mm
Reel Orientation
Device Orientation
REEL
USER FEED DIRECTION
4 mm
Notes:
“T” = Device Code
“Y” = Month Code
• TY
TOP VIEW
• TY
7
CARRIER
TAPE
• TY
• TY
USER
FEED
DIRECTION
8 mm
END VIEW
Tape Dimensions
T
Do
Note: 1
Po
B
A
A
P1
Scale 5:1
Bo
W
Note: 2
F
E
5° (Max)
B
D1
BB SECTION
Note: 2
P2
Ao
R0.1
5° (Max)
Ko
Ao = 0.73±0.05 mm
Scale 5:1
Bo = 1.26±0.05 mm
AA SECTION
mm
Ko = 0.35 +0.05
+0
Unit: mm
Symbol
Spec.
K1
Po
P1
P2
Do
D1
E
F
10Po
W
T
–
4.0±0.10
4.0±0.10
2.0±0.05
1.55±0.05
0.5±0.05
1.75±0.10
3.50±0.05
40.0±0.10
8.0±0.20
0.20±0.02
Notice:
1. 10 Sprocket hole pitch cumulative tolerance is ±0.1 mm.
2. Pocket position relative to sprocket hole measured as true position
of pocket not pocket hole.
3. Ao & Bo measured on a place 0.3 mm above the bottom of the
pocket to top surface of the carrier.
4. Ko measured from a plane on the inside bottom of the pocket to
the top surface of the carrier.
5. Carrier camber shall be not than 1 m per 100 mm through a length
of 250 mm.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-2916EN - December 26, 2012