MLA-06183A
5 - 18 GHz Low-Noise MMIC Amplifier
Data Sheet Rev A
May 2010
FEATURES
APPLICATIONS
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Wide Band:
NF (ext match):
5 to 18 GHz
3.4 dB @ 6 GHz
3.0 dB @ 12 GHz
3.7 dB @ 18 GHz
P-1dB:
21 dBm
OIP3:
29 dBm
Gain:
19 db
Bias Condition:
VDD = 4.5V
IDD = 135 mA
50-Ohm On-chip Matching
Unconditionally Stable from 50 MHz to 20 GHz
Microwave Radios
Satellite Communications
EW Systems
Commercial Wireless Systems
DESCRIPTION
The MLA-06183A is a fully-matched 2-stage broadband low-noise MMIC amplifier utilizing high-reliability low-noise
GaAs PHEMT technology. This MMIC is suited for microwave radios, wideband EW, satellite communications,
instrumentation, and commercial communication systems, where low-noise figure and high-gain are desirable. It has
excellent gain of 19 dB and Noise Figure of 3 dB @ 12 GHz. Typical P-1dB is 21 dBm and OIP3 is + 29 dBm @ 12
GHz. It has on-chip bias circuit, choke, and DC blocking to provide bias stability and ease of use.
ELECTRICAL SPECIFICATIONS: VDD1, VDD2=+4.5V,VG2/VG2=-0.025 (2), IDD=135mA, Ta=25 C, ZO=50 ohm (1)
P ARAM ET ER
F requenc y Range
G ain
G ain F latnes s
Input Return Los s
T ES T CO NDIT IO NS
6 - 8 G Hz
8 - 14 G Hz
14 - 17.5 G Hz
18 G Hz
6 - 14 G Hz
14 - 18 G Hz
6 - 14 G Hz
14 - 18 G Hz
O utput Return Los s
O utput P 1dB
O utput IP 3
@ 0 dB m /tone, 1 M Hz s eparation
Nois e F igure
O perating B ias Conditions : V DD1, V DD2
IDD
S tability F ac tor K
6 G Hz
12 G Hz
18 G Hz
6 G Hz
12 G Hz
18 G Hz
6 G Hz
12 G Hz
18 G Hz
V G 1,V G 2= -0.025V , ty pic al
0.05 to 20 G Hz
T YP ICAL DAT A
5-18
20
19
18
16
0.75
1.25
9
12
UNIT S
G Hz
12
17
21
22
29
29
27
3.4
3.0
3.7
+ 4.5
135
dB
dB
+ /-dB
dB
dB m
dB m
dB
V
mA
> 1
(1) A ll data is meas ured on 50 Ohm c arrier, w ith Dual-Bias Supply and s tub tuning s how n in the datas heet as s embly diagram.
(2) Sinc e the V G bias s etting has ty pic al range of -0.1 to +0.1V , V G1, V G2 bias inputs may be direc tly grounded/bonded to DC ground
to c onv ert to s ingle +v e s upply operation s uc h that V G = 0V . The bias c urrent w ill then be f ix ed and c annot be c ontrolled or s hut dow n
by V G input.
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-06183A
5 - 18 GHz Low-Noise MMIC Amplifier
Data Sheet Rev A
May 2010
TYPICAL RF PERFORMANCE: VDD1, VDD2=+4.5V,VG2/VG2=-0.025 (2), IDD=135mA, Ta=25 C, ZO=50 ohm (1)
Input Re turn Loss ve rsus Fre que ncy & Te m p
G a in ve rsu s F re q u e n cy & T e m p
25 C
-40 C
85 C
25 C
22
Input Return Loss (dB)
Gain (dB)
20
18
16
14
12
10
-10
-15
-20
-25
6
7
8
9 10 11 12 13 14 15 16 17 18
F re q u e n cy (G H z )
5
O u tp u t Re tu rn L o ss ve rsu s F re q u e n cy & T e m p
25 C
- 40 C
6
7
8
9 10 11 12 13 14 15 16 17 18
Fre que ncy (GHz )
Isola tion ve rsus Fre que ncy & Te m p
85 C
25 C
-40 C
85 C
-20
-5
-10
Isolation (dB)
Output Return Loss (dB)
85 C
-30
5
-15
-20
-25
-30
-40
-50
-60
-30
5
6
7
8
9
5
10 11 12 13 14 15 16 17 18
6
7
8
C o rre c te d N F v e rsu s F re q u e n c y
4 .5 V ,1 3 4 mA
P-1 d B & O IP3 v e r s u s F r e q u e n c y
3 .5 V ,1 0 0 mA
P-1d B, 4 .5V ,1 34 mA
32
3 .8
30
P-1dB/OIP3 (dBm)
4
3 .6
3 .4
3 .2
3
2 .8
26
24
22
20
18
2 .4
16
6
7
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
8
9 10 11 12 13 14 15 16 17 18
F re q u e n c y (G H z )
OIP3, 4.5V ,134 mA
28
2 .6
5
9 10 11 12 13 14 15 16 17 18
Fre que ncy (G Hz )
F re q ue n cy (G H z )
Noise Figure (dB)
-40 C
-5
5
6
7
8
9
10 11 12 13 14 15 16 17 18
F re q u e n cy (G H z )
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-06183A
5 - 18 GHz Low-Noise MMIC Amplifier
Data Sheet Rev A
May 2010
TYPICAL RF PERFORMANCE: VDD1, VDD2=+4.5V,VG2/VG2=-0.025 (2), IDD=135mA, Ta=25c, ZO=50 ohm (1)
In p ut Re tu rn L oss ve rsu s F re q ue n cy
G a in ve rsu s Fre qu e n cy
25 C
25 C
22
Input Return Loss (dB)
-5
Gain (dB)
20
18
16
14
12
-10
-15
-20
-25
10
-30
5
6
7
8
9 10 11 12 13 14 15 16 17 18
F re q ue ncy (G Hz )
5
6
O utp ut Re turn L o ss ve rsu s F re q ue ncy
7
8
Iso la tio n ve rsu s F re q u e n cy
25 C
25 C
-20
-5
-10
Isolation (dB)
Output Return Loss (dB)
9 10 11 12 13 14 15 16 17 18
Fre q u e n cy (G Hz )
-15
-20
-25
-30
-40
-50
-60
-30
5
6
7
8
9 10 11 12 13 14 15 16 17 18
5
Fre qu e n cy (G Hz )
6
7
8
9 10 11 12 13 14 15 16 17 18
F re q ue n cy (G Hz )
P -1d B & O IP 3 ve rsus F re qu e n cy
P-1dB/OIP3 (dBm)
P-1dB, 3.5V ,100mA
OIP3, 3.5V ,100mA
30
28
26
24
22
20
18
16
14
5
6
7
8
9
10 11 12 13 14 15 16 17 18
Fre qu e n cy (G Hz )
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETERS
UNITS
MAX
VDD
Drain Voltage
V
5.5
IDD
Drain Current
mA
200
Pdiss
DC Pow er Dissipation
W
0.7
Pin max
RF Input Pow er
dBm
+13
Toper
Operating Case/Lead Temp Range
ºC
-40 to +85
Tch
Channel Temperature
ºC
150
Tstg
Storage Temperature
ºC
-60 to 150
Exceeding any on of these limits may cause permanent damage.
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-06183A
5 - 18 GHz Low-Noise MMIC Amplifier
Data Sheet Rev A
May 2010
ASSEMBLY DIAGRAM
Notes:
1) 1st Close-in Bypass cap values must be at least 100pF and placed < 30mil from chip edge. The
large bypass cap 0.01uF is also recommended to be as close to chip as possible.
2) RF IN/OUT Bonds must be 3 wires of length < 10 mil & 0.7 mil diameter for best RF performance.
3) 2 Tuning stubs (5 x 50 mil each) on the 50 ohm line are required on output side about 25 mil from
bond edge for good output return loss especially at frequencies > 15 GHz . Stub size & location
may be tuned for best RF performance . All data shown include the tuning stubs.
4) 1 Tuning stub (5 x 40 mil ) on the 50 ohm line is required on input side about 40 mil from bond
edge for good input return loss over the full band. Stub size & location may be tuned for best RF
performance . All data shown includes the tuning stubs.
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-06183A
5 - 18 GHz Low-Noise MMIC Amplifier
Data Sheet Rev A
May 2010
MECHANICAL INFORMATION
Outline Drawing
Notes:
1) Die Size: 1.95 x 1.31 x 0.1 mm.
2) RFIN, RFOUT Bond Pad Size is: 80 x 80 micron.
VDD1, VDD2, VG1 and VG2 Bond Pad Size is: 80 x 170 micron.
3) Backside of chip is metalized and provides DC and RF Ground with on-chip vias.
4) Bond Pad and Backside metallization: Gold.
Functional Diagram
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com