Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power MOSFETs are voltage-controlled devices and can therefore be driven by merely applying a small power to the gate. However, since the input capacitance Ciss of power MOSFETs is somewhat high, it is necessary to quickly charge the input capacitor with low-impedance signal sources, especially for high-speed switching. Low-impedance drive is necessary to shorten the turn-ON time; however, the input capacitance Ciss is overcharged when the voltage applied is increased and, conversely, td (off) becomes longer. It is possible to turn OFF power MOSFETs by dropping the gate voltage to zero but, as with bipolar transistors, it is also possible to turn a Power MOSFET OFF quickly by reducing the value of the charge Q to zero. The charge Q which is built up by the gate-source and gate-drain voltage, will quickly fall to zero after applying a reverse bias between the gate and source voltage (ig = dQ/dt). Figure 5.1 shows the relationship Test circuit VDD (= 200 V) between the magnitude of the reverse bias and the switching time. 40 Ω IG waveform 10 μs In the case of N-channel MOSFETs, it ID = 5 A Output 5V is possible to decrease the switching IG −VG 0 times tf and toff by using a negative power supply, that is, by configuring a low-impedance circuit. To operate power MOSFETs at high 1000 speed, it is necessary to add a speed-up 600 circuit to increase the speed at which the 400 Switching time (ns) equivalent input capacitance between the gate and source is charged. Figure 5.2 shows a speed-up circuit. 200 toff 100 60 40 tf 20 10 0 1 2 −VG 3 4 5 6 (V) Figure 5.1 Switching Time − VG Characteristics 1 Power MOSFET in Detail (b) Current path at rise Speed-up circuit configured with C1, Q2, D1, and D2. Current flows in the direction of the arrow when the power MOSFET is turned ON, instantaneously charging the input capacitor (Cin) Q1 Q1 When the power MOSFET is turned OFF, the voltage accumulated in C1 is used to turn on Q2 and rapidly extract the charge between the gate and source. D1 D1 D1 R4 NS R1 R3 NP T3 R3 R4 Q2 R5 D2 C1 Q2 NP C1 C1 R4 NS Q1 T1 R1 R2 R1 T1 R3 (c) Current path at fall R2 (a) Speed-up circuit D2 NS NP R5 D2 Figure 5.2 Gate Drive Speed-Up Circuit 5.2 The Influence of Wiring Inductance Since the switching time for power MOSFETs is at least one order of magnitude faster than that of bipolar transistors, they are very effective in fields where high-speed switch is required. However, unless some countermeasure is taken in the circuitry, this high-speed switching characteristic may give rise to a voltage surge due to stray inductance LS, which is impressed on the MOSFET. The magnitude of this surge, Vsurge, is determined as follows: Vsurge = −(LS + L’S)・di/dt + VDD It is necessary that this value be given LS sufficient margin in relation to drain-source breakdown voltage VDSS. To reduce this surge VDD voltage, it is necessary to reduce either di/dt or the stray inductance; however, since the reduction of di/dt does not agree with the original purpose of high-speed switching, it is necessary to reduce the stray inductance. This can be done by using copper plates instead of wires, because LS’ Figure 5.3 Circuit Stray Inductance copper has lower inductance. Inserting the capacitors shown in Figure 5.3 is also an effective way of reducing the magnitude of the generated voltage surge. 2 Power MOSFET in Detail 5.3 Parasitic Oscillation Parasitic oscillation is more prone to occur with power MOSFETs than with bipolar transistors. This is caused by the high-frequency gain which is characteristically high with power MOSFETs. Parasitic oscillation may occur when impedance became negative resistance for input which is caused by strong coupling of input and output depending on gate-drain capacitance and stray capacitance. The following methods can be used to avoid this situation. Cs Lower the gain by inserting a resistor. Insert a ferrite bead. Make the wires thick and short. Figure 5.4 How to Prevent Parasitic Oscillation (1) Make the wires thick and short. Twisted wires should be used not to connect the circuit to other wiring. (2) Insert a ferrite bead as close to the gate as possible. (3) Insert a series resistor at the gate. 5.4 Source-Drain Diode Withstand Capability Normally, for motor control circuits, power MOSFETs are used in a bridge configuration in which the top and bottom power MOSFETs are turned ON and OFF alternately. Now, Q1 and Q4 of the power MOSFETs shown in Figure 5.5 are turned ON and the current flows as indicated by A. Next, when FET Q1 is turned OFF to control the motor speed, the current is fed back through the freewheeling diode of FET Q2, as indicated by B. If FET Q1 is again turned ON after that, a shorting current flows from FET Q1 to FET Q2 during the time (trr) until the freewheeling diode of FET Q2 reverse recovers, and heat is generated due to the resulting power dissipation. Thus, when a power MOSFET is used for motor control, the trr of the parasitic diode should be minimized. Basically, it is possible to use the parasitic diode of a power MOSFET as a freewheeling diode; however, depending on the usage conditions, it may be necessary to install an external diode, as shown in Figure 5.6. 3 Power MOSFET in Detail Q1 Q3 A M Q2 Q4 B Figure 5.5 Motor Control Circuit Using Power MOSFET D SBD FRD Di R S Figure 5.6 External Diode Connection Figure 5.7 Parasitic Transistor of a Power Method MOSFET Also, in a power MOSFET, the equivalent of a parasitic bipolar transistor exists between drain and source (see Figure 5.7). Note that this parasitic transistor may be turned ‘ON’ by the base-emitter resistor R’s voltage drop, during the transitional state while a power MOSFET switches from ‘ON’ to ‘OFF’, and the device may break down. As illustrated in Figure 5.5, when using parasitic diodes between drain and source in motor control circuits, power supply circuits and illumination circuits, it is recommended to use high-breakdown-voltage devices (example: π-MOS V series and similar). Parasitic Diode Breakdown Voltage (for high-performance parasitic-diode type device) Testing Circuit π-MOS V (2SK2543) No destruction 600 *D.U.T. VDS = 200 V/div 500 (A/μs) di/dt VGS +15 V VCS = 0 −15 V IDR = 0 C2 C1 VDD L1 IDR π-MOS V (2SK2543) 400 300 ID = 10 A/div 200 Current type destruction 100 di/dt = 500 A/μs 0 100 200 300 VDD 200 ns/div (V) @IDR = 8 A *: D.U.T. = Device under test 4 Power MOSFET in Detail 5.5 Avalanche Resistance At turn-OFF in power MOSFETs used as high-speed switching devices, high surge voltage can occur between the drain and the source, caused by the inductance of the circuits themselves and by drifting inductance. This voltage can exceed the maximum ratings of the MOSFET. Previously, a surge absorption circuit was required to protect the MOSFET. Now, however, the reduction in the number of components and the miniaturization of equipment are creating a growing need to eliminate the absorption circuit and to absorb any surge in a power MOSFET even if it exceeds the maximum ratings. In response to this need, Toshiba has developed a product line of power MOSFETs usable up to the point of self-breakdown voltage. (1) Avalanche resistance guaranteed series The following series guarantees avalanche resistance. Voltage Series 2 L -π-MOS V π-MOS V 16 to 200 V U-MOS I to IV 400 to 600 V π-MOS V to VI 800 to 1000 V π-MOS III to IV (2) Guarantee method The avalanche energy when Tch (max) reaches 150°C is listed in the maximum ratings column of the individual product specifications. When using the product, check that the actual energy impinging on the device does not exceed its maximum rating. Use the following procedure to check. a) Calculate the channel temperature Tch (max) Calculate the total rise at avalanche in the channel temperature resulting from steady power loss and switching loss according to the following equations, and confirm that the maximum channel temperature value at avalanche doesn’t exceed Tch (max) = 150°C. A. For a single pulse: ΔTch = 0.473・V (BR) DSS・IAR・θch-a in which V (BR) DSS: Breakdown voltage between drain and source IAR: Avalanche current θch-a: Thermal resistance from channel to ambient air at avalanche 5 Power MOSFET in Detail B. For a continuous pulse: ⎡T ⎤ T ⎞ ⎛ ΔTchpeak = P0 ⎢ 1 θch-a + ⎜1 − 1 ⎟ ⋅ rth (T+ T1 ) − rth (T ) + rth (T1 ) ⎥ T T ⎝ ⎠ ⎣ ⎦ in which P0: Peak value T1: Pulse width T: Cycle θch-a : Thermal resistance from channel to ambient air Note 1: For details of how to calculate Tchpeak of the continuous pulse see 6, Heat Sink Design. b) Calculating avalanche energy EAS Check that the energy at avalanche during actual operation does not exceed the maximum rating, using the following equation: 1 E AS= ⋅ L ⋅ I 2 AR 2 ⎛ ⎞ V (BR ) DSS ⎟ ⋅⎜ ⎜ V (BR ) DSS − VDD ⎟ ⎝ ⎠ in which EAS: Avalanche energy IAR: Avalanche current V (BR) DSS: Breakdown voltage between drain and source VDD: Power supply voltage Satisfying equations a) and b) above ensures that the device is used within its maximum ratings. Avalanche Voltage Test result @L = 200 μH, VDD = 90 V Test circuit Test waveform L 2SK2543 Peak avalanche current 2SK1352 VDS = 100 V/div IO VDS 25 VDD (A) 2SK2543 ID = 2 A/div 20 Rg = 25 Ω 15 +15 V 10 5 ID max −15 V 5 μs/div 0 6 Power MOSFET in Detail 5.6 Parallel Connections Power MOSFETs have outstanding thermal stability and do not suffer thermal runaway; therefore, parallel connection of them is easier than that of bipolar transistors. Bipolar transistors are operated by the flow of base current; therefore, the current balance is disrupted by fluctuations of the base-emitter voltage VBE, making parallel connections difficult. Power MOSFETs, on the other hand, are voltage driven. Therefore it is only necessary to supply drive voltage to each FET connected in parallel, making parallel connections relatively easy. However, when controlling high power at high speeds, it is necessary to carefully consider selection of devices and the range of possible fluctuations in their characteristics. The most important things to remember when making parallel connections are to avoid current concentration, including overcurrent during the transitional state, and to assure a well balanced, uniform flow of current to all devices under all possible load conditions. Normally, current imbalance appears during switching ON and OFF; however, this is caused by differences in the switching times of the power MOSFETs. It is known that fluctuations in switching times are largely dependent on the value of the gate-source threshold voltage Vth. That is, the smaller the value of Vth the faster the switching ON; and the larger the value of Vth the slower the switching ON. Conversely, when turning OFF, the larger the value of Vth the faster the cutoff. Because of this, current imbalance occurs during both switching ON and OFF when the current concentrates in an FET with a small Vth. This current imbalance can apply an excessive load to a device and result in failure. Thus, when considering fluctuation in switching time during transition, it is preferable that the Vth values of all power MOSFETs connected in parallel should be the same. Q1 ID1 Due to smaller Vth of Q1 than the Vth of Q2. Circuit with symmetrical wiring is preferable. VDD ID2 ID1 Q2 0 Input and output should be separated. ID2 0 Figure 5.8 Imbalance of Current in Parallel Connection 7 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Product may include products subject to foreign exchange and foreign trade control laws. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.