Schottky Barrier Diode, 50V, 1A, Low IR, Single

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Ordering number : EN6343B
SBE002
Schottky Barrier Diode
http://onsemi.com
50V, 1A, Low IR, Single CPH6
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
•
•
• Halogen free compliance
Low forward voltage (VF max=0.55V) Fast reverse recovery time (trr max=10ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm)
Large allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
50
Nonrepetitive Peak Reverse Surge Voltage
VRSM
55
V
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
50Hz sine wave, 1 cycle
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-012
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
4
Packing Type: TL Marking
0.9
1
2
0.95
LOT No.
SD
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
SBE002-TL-E
SBE002-TL-W
0.15
2.9
6
TL
3
0.4
1 : Cathode
2 : Cathode
3 : No contact
4 : Anode
5 : Cathode
6 : Cathode
Electrical Connection
6
5
4
1
2
3
CPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
60414HK TC-00003128/91912TKIM/O0899GI(KT) No.6343-1/4
SBE002
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Conditions
VR
VF
IR=300µA
IF=1A
IR
C
VR=25V
VR=10V, f=1MHz
trr
Rth(j-a)
IF=IR=100mA, See specified Test Circuit.
Ratings
min
typ
max
50
V
0.55
80
52
When mounted on ceramic substrate (600mm2×0.8mm)
Unit
V
µA
pF
10
110
ns
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Cicuit
50Ω
100Ω
10Ω
10mA
100mA
10µs
100mA
Duty≤10%
-- 5V
trr
Ordering Information
Package
Shipping
memo
SBE002-TL-E
Device
CPH6
3,000pcs./reel
Pb-Free
SBE002-TL-W
CPH6
3,000pcs./reel
Pb-Free and Halogen Free
No.6343-2/4
SBE002
IF -- VF
10
5
3
2
3
C
5°
2
=1
2
Ta
1.0
Reverse Current, IR -- mA
Forward Current, IF -- A
7
5
°C
25
7
5
3
2
0.1
0
0.2
0.4
0.8
1.2
1.0
1.2
1.0
Rectangular wave
(4)
0.8
θ
360°
0.6
(3)
(2)
(1)
0.4
Sine wave
0.2
180°
0
0.2
0.4
0.6
0.8
75°C
0.1
5
3
2
50°C
0.01
25°C
5
3
2
10
20
1.0
360°
Average Forward Current, IO -- A
1.2
IS -- t
1.4
IT00610
30
40
50
Reverse Voltage, VR -- V
C -- VR
5
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
°C
100°C
5
3
2
IT00608
PF(AV) -- IO
1.4
14
Surge Forward Current, IFSM(Peak) -- A
0.6
Forward Voltage, VF -- V
5
Ta=12
1.0
0.001
5
0
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
7
5
0
IR -- VR
10
60
IT00609
f=1MHz
3
2
100
7
5
3
2
10
1.0
2
3
5
7
10
2
Reverse Voltage, VR -- V
3
5
7 100
IT00611
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00612
No.6343-3/4
SBE002
Outline Drawing
SBE002-TL-E, SBE002-TL-W
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
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PS No.6343-4/4
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