Editorial Note
As we progress towards the end of the year, DSI’s engagement with
the industry bears fruit as we signed a collaborative research
agreement with Micron to advance spin torque transfer magnetic
RAM (STT-MRAM) research. Micron and DSI will jointly set up a lab to
develop STT-MRAM prototypes and manufacturing processes, which
will allow for easier transfer of manufacturing knowledge and
processes to the industry in future.
This joint agreement with Micron comes quite closely after an earlier
collaboration with 4DS Inc., developing resistive RAM (RRAM) and
further shows DSI’s increasing efforts and resources on developing
next generation non-volatile memory (NVM) technologies. More
details about the collaboration can be found within this issue.
This quarter, we also co-organized the Magnetics Symposium 2011
with IEEE Magnetics Society Singapore Chapter. The event included
several distinguished IEEE Magnetics Society lecturers as well as
several scientists from local research organizations, giving talks on
various fields ranging from magnetic recording and magnetic random
access memory to magnetocalories.
We hope that you will enjoy the articles in this issue.
• Editorial Note
• Micron and DSI
Collaborates on STTMRAM
• The Relevance of
Failure Analysis
• Measuring Photon
Statistics with
Photon Number
Resolving Multi-Pixel
Detector
• Magnetics
Symposium 2011
• Our Invited Speakers
• Recent Conferences /
Seminars/
Workshops
Participated In By
Our Staff
Conference Papers
and Journals
Micron and DSI Collaborates
on STT-MRAM
Clockwise from top: Mr Lim Chuan Poh (Chairman, A*STAR), Mr Philip Lim (CEO, ETPL), Dr
Pantelis S Alexopoulos (Executive Director, DSI), Dr Scott J DeBoer (Vice President of Process
R&D, Micron) at the signing ceremony.
On 28 October 2011, Micron signed research agreements with DSI to collaborate on
developing spin torque transfer magnetic RAM (STT-MRAM). They will also be setting up a
joint R&D facility to develop STT-MRAM prototypes and manufacturing processes.
Flash memory, the most common form of current non-volatile memory (NVM), has
enabled the age of mobile digital devices, from thumb drives to smart phones to iPads.
With the increasing demand for newer and faster mobile consumer electronic devices,
Flash memory is currently being pushed to its scaling and performance limits, hence the
need to look for alternative NVM that could potentially replace Flash in future.
At DSI, research is being done on various types of NVM to determine which would have
the best potential to be the next generation NVM. In June, DSI signed an agreement to
work with 4DS on resistive RAM (RRAM) research and now, DSI will be collaborating with
Micron on high density STT-MRAM for the next three years. With these research
initiatives, DSI works towards being at the forefront of next generation memory
technologies.
Failure analysis is an important process for determining the reason behind the failure of a product
or device as it would help product designers and engineers to come up with improvements to the
product design, and prevent similar failures from taking place in future. At DSI, the Materials
Science Lab (MSL) takes on the role of conducting failure analysis for industry partners as well as
DSI’s own in-house research. The article below details more about the capabilities and facilities that
MSL has acquired.
The Relevance of Failure
By Jack Tsai
Materials Science Lab
In our daily life we often encounter equipment or product failures. However, most of us do not
possess the technical know-how or the right set of tools to perform our own trouble shooting or
fixing. We mostly rely on either sending the equipment to the original manufacturer or some third
party repair shops that have developed the expertise to either trouble shoot or find the faulty
component within the product. More often than not, we accidentally damage the products and end
up collecting a lot of dead equipment or products. Have you ever wondered if these equipment or
products can be more robust or fault tolerant?
In every product or equipment development life cycle, it will first undergo a design conception
follow by prototyping. It will then be subjected to a series of engineering performance testing and
reliability testing. A stable product is only obtained after several iterations of optimization. In every
product, designers often need to work closely with the testing teams (performance or reliability
tests) to make the iterative/incremental improvement. For each product, there are certain
specifications that it should meet based on the rigorous testing conditions. What sets apart a good
product versus a not so good product is how easily the product fails during its life cycle. This
concept is so ingrained in our psyche that we do not fully appreciate the need to perform careful
failure analysis of each failed component or device in order to make further improvements to it or
prevent similar failures from taking place in the future.
The Materials Science Lab (MSL) at the Data Storage Institute (DSI) plays this essential role of
conducting failure analysis for many of our industry partners or researchers. With the relentless
efforts made to miniaturize the size of a device or component, the characterization of these small
devices becomes more and more difficult. Oftentimes, in order to make the necessary
improvements, one requires the ability to physically measure or see certain aspect of the device.
Therefore there is a constant need to improve our characterization tools in order to enable us to
see or measure the device.
However, just having the best or most advanced equipment is insufficient for determining the
cause of the failures. For good in-depth failure analyses, one also needs to possess a well-rounded
and extensive knowledge on the physics of the device and how the device was manufactured. With
the assistance of tools available, one can then perform various physical characterization of the
device to look for possible process deviation or design flaws which led to the device’s eventual
failure. It is the ability to find the root cause of the failure and determining the exact mechanism
which caused the device to fail that will allow product engineers to improve on the designs or
manufacturing processes. In the industry, this is called the lesson learned. The next cycle of
improvement begins.
Scientists at MSL have accumulated knowledge of the semiconductor wafer manufacturing
processes as well as magnetic disks and heads manufacturing processes. This knowledge allows the
scientists to make use of analytical tools in the lab to troubleshoot the failure mechanism of the
device. Our areas of expertise are in characterizing magnetic thin film devices using X-Ray
Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Time of Flight
Secondary Ion Spectroscopy (TOFSIMS). Our latest additions, the FEI focus ion beam (DA300) and
transmission electron microscope (Tecnai TF20) will be made available to industry partners and
researchers for use as well.
Transmission electron microscopy (TEM) is a microscopy technique whereby a beam of electrons is
transmitted through an ultra-thin specimen, interacting with the specimen as it passes through.
The image we get from the TEM has a significantly higher resolution than optical microscopes and
conventional scanning electron microscopes (SEM). It enables researchers to examine finer details
of materials down to the Armstrong level, which is a millionth time smaller than the human hair.
With such capability, we will be able to work with researchers to study the thin growth and thin film
structure. Hence, the upcoming TEM (Tecnai TF20 X-TWIN with EDS, FEI) is an ideal tool for
analysing materials and devices at submicron and nanometer scales. Researchers would be able to
see details of a material or device from various aspects (Table 1), and thus, be able to understand
material properties and device failure mechanisms at the micrometer scale.
The TEM instrument also comes with a powerful focused ion beams (FIB) (DA300, FEI) dedicated
for TEM sample preparation and in-line wafer process observation. Traditionally, TEM sample
preparation can be very tedious and time consuming, depending on the sample type and the
purpose of study. For a common thin film sample, such as media, the normal procedure takes
about 2 days. This entails cutting the sample into thin slices, cutting 3-mm-diameter disks from the
slice, thinning the disk on a grinding wheel, dimpling the thinned disk and finally ion milling down
to 100 nm thickness. The sample is then ready for TEM analysis. Yes, the final specimen is only 100
nm in thickness, less than 1 mm in length, and the observable area might just be a few hundred
nanometers. For samples that require special location, the traditional method of sample preparation
will not be possible to complete the task. With a FIB sample preparation tool, this process can be
shortened to about 2 hours or even less at any specific location and therefore avoid much of the
labour intensive work. When using the FIB to prepare a TEM sample, region of interest is cut using
a well-controlled beam of Gallium (Ga) ions. By varying the energy, shape and current of the Ga
beam, the specimen can be efficiently cut and thinned. The whole process is like cutting a tofu with
a very sharp knife. The final size of the specimen prepared by FIB is typically about 100
nanometers (slightly bigger than a bacteria cell). It is then transferred to a TEM grid by fast and
reliable in-situ nanoprobe lift-up for TEM observation.
Besides sample preparation, the upcoming FIB instrument provides three additional capabilities.
First, it can handle 12” wafers with its robotic handling system. It also operates like a highresolution SEM with a better contrast. In-line wafer process observation and sampling can be done
without interrupting the wafer processes later on. Often, DA300 FIB is part of the in-line metrology
tool during the device fabrication step. Secondly, gas assisted ion beam etching and deposition is
possible. The FIB enables users to selectively etch or deposit materials in a confined location. This
function has been widely used in the field of mask repair, circuit modification, formation of contacts
in semiconductors, atomic force microscope tip fabrication, and maskless lithography. Lastly, FIB is
an ideal tool to conduct failure analysis and integrated chip (IC) decapsulation at the chip level. It
combines milling capability with in-situ SEM imaging, which is very useful for identifying the root
cause of failure when a physical defect is present. Scanning TEM (STEM) analysis is also available
to provide additional information when SEM imaging is not sufficient.
Both TEM and FIB tools will be available by end of 2011. With these additional analytical
capabilities, MSL will offer enhanced advance characterization and failure analysis capabilities
required to meet the needs of both the industry and DSI’s own research.
DA 300 Focus Ion Beam by FEI
Tecnai TEM by FEI
Extremely weak optical pulses, also known as multi-photon quantum states are theorized to be
beneficial for quantum computation and quantum lithography beyond the diffraction limit amongst
many other uses. However, there is considerable difficulty in measuring the photon statistics for
these states due to the existing limitation in the response of single-photon detectors; thus there
have been many efforts in the research community to come up with photon-number resolving
detectors (PNRD).
The Multi Pixel Photon Counter (MPPC) is a compact and cost-efficient solution, however, the
crosstalk between pixels should be carefully considered. This article will share on how DSI
researchers have found a way to mitigate the issue of the crosstalk in order to provide a more
accurate measurement of photon statistics.
Measuring Photon Statistics with Photon
Number Resolving Multi-Pixel Detector
By Leonid Krivitskiy
Advanced Concepts Group
In modern quantum optics, there is considerable interest in extremely weak optical pulses
containing only a few photons, more commonly referred to as multi-photon quantum states. These
states are believed to be beneficial in several practical protocols of quantum computation, security
analysis of single-photon quantum key distribution protocols, quantum lithography beyond the
diffraction limit and many others [1,2].
Any practical implementation of multi-photon states would obviously require their accurate
characterization. However, this task is considerably difficult due to the existing limitation in the
response of single-photon detectors. Indeed, a conventional avalanche photodiode (APD),
discriminates only between “zero photons” and “one photon or more” without further photonnumber resolution. The urgent requirement to access photon statistics of faint light pulses
motivates the investment of considerable efforts in the engineering of photon-number resolving
detectors (PNRD) – a class of devices where the produced outcome is proportional to the number
of simultaneously impinging photons.
To date, there have been several technologies that could realize PNRD [3]. For example, various
cryogenic devices such as visible-light photon counters (VLPC) and transition edge sensors (TES)
have moderate photon number resolution, low noise, and high quantum efficiency. However, they
require cryogenic cooling, down to Helium temperatures, and highly skilled operation. An
alternative approach for the implementation of PNRD is based on various modifications of widely
accessible avalanche photodiodes (APD). The standard “trick” relies on joint measurements by
independent APDs when an incoming pulse is split by a chain of beam splitters (Fig. 1a). The
multi-photon component is revealed, by simultaneous detection events (“coincidences”) between
different APDs. Obviously, expansion of such schemes is limited by the need to use more
beamsplitters and photodetectors.
Recently, a compact and cost-efficient solution for PNRD was made commercially available with the
introduction of a Multi Pixel Photon Counter (MPPC) by Hamamatsu Photonics [4]. In MPPC several
hundred of silicon APDs, referred to as pixels, are embedded in a single chip of several millimeter
size with their outputs connected into a summation circuit (Fig. 1b). The chip is illuminated by a
spatially diffused light spot (e.g. originating from the fiber) containing a few photons, provided
that the chance of two photons hitting the same pixel is negligible. The amplitude of MPPC output
is proportional to the number of firing pixels, which, in an ideal case, is equivalent to the number
of registered incident photons. Thus, the concept of MPPC resembles the approach of separating an
incoming pulse into multiple beams, providing a striking advantage in compactness, and photonnumber resolution.
Fig 1. (a) A conventional setup for characterization of multiphoton (up to 3) states based on
coincidences detection between several avalanche photodiodes (APD), preceded by
beamsplitters (BS1,2). (b) A concept of the MPPC, where a spatially diffused light spot
impinges on the MPPC matrix. The outputs of the fired pixels are collected by the summation
circuit. Inset shows an actual MPPC chip (photo: Sheffield T2K group).
Despite the significant benefits outlined above, some limitations of MPPC technology hinders its
wide applications. The most crucial imperfection of MPPC is the crosstalk between pixels. A photon
impinging on a pixel triggers an electron avalanche, which in turn re-emits broadband photons due
to the relaxation of hot carriers. Since the optical isolation of the pixels is not perfect, the “extra”
photon created can trigger a “fake” avalanche in a neighboring pixel. Unlike the random dark
noise, “fake” avalanches happen almost simultaneously with the “true” ones, making the accurate
reconstruction of the input photon statistics quite complicated.
From a practical aspect, it is of interest to analyze several interconnected matters related to
MMPC:
a) Is it possible to calibrate the crosstalk without relying on the detector parameters, which are
not directly accessible for experimental verification;
b) How do “fake” photon correlations behave for a weak coherent state produced by a laser;
c) Whether an existing MPPC allows one to distinguish “true” photon correlations from a quantum
light source.
In the present work, researchers at DSI have made an effort to answer the above questions by
applying a theoretical model of the MPPC, and then by a direct experimental verification of the
proposed approach [5].
First, second-order correlation function g(2) is introduced, which represents a convenient parameter
to assess the photon statistics. For example, coherent states, produced by well stabilized lasers
and measured by the photodetector without the crosstalk, always gives a constant value of g(2)=1.
In contrast, a quantum source of correlated photon pairs, yields g(2)=1+1/<N>, where <N> is the
average number of photons. Once a MPPC model, which accounts for the crosstalk is introduced,
the following formula was discovered for the measurement of g(2):
g(2)=C/<N>+gt(2),
where gt(2) is the “true” correlation function of the incident light, C is the constant depending on
the crosstalk probability. The crosstalk contributes to the additive portion of C/<N> to the
measured g(2). Thus, by using coherent light for which gt(2)=1, the crosstalk probability can be
easily determined, and then the detector can be used for accessing quantum correlations.
In the experimental setup, the coherent state was obtained with attenuated pulsed Nd:YAG laser
(532nm), which was directly addressed into MPPC. The source of quantum light, which contains
only of pairs of photons of the same energy, so called two-photon or bunched light, was realized
via a non-linear optical process of parametric down conversion (PDC) in non-linear beta barium
borate (BBO) crystal, by using a pulsed Nd:YAG laser (266nm) as a pump. The consistency of the
measurements was checked against two standard APDs which do not exhibit any crosstalk.
The dependence of g(2) on the mean photon number for the coherent state, measured by MPPC, is
presented in Fig.2 (black trace). The experimental data obtained is in agreement with (1), thus
demonstrates that there is excess two-photon correlations, which are attributed to the crosstalk.
The results of the measurements by MPPC of two-photon light are presented in Fig.2 (red trace)
and clearly demonstrates additional two-photon correlations above the coherent level. “True” value
of g(2) inferred according to (1) for the two-photon light, is presented in Fig.3 (red trace), and
demonstrates a close fit with the results obtained in the control measurements by two APDs (Fig.
3, black trace).
Fig 2. Dependence of g(2) on the mean number of photocounts per pulse,
obtained via MPPC for the coherent state (black dashed trace, squares) and
two-photon light (red solid trace, circles). The curves are theoretical fits.
Fig 3. Comparison of the dependence of the inferred g(2) on the mean
photocounts per pulse, measured by the MPPC (red solid trace) with the
one obtained with a traditional HBT setup (black dashed trace, squares).
In conclusion, the experiment demonstrated that MPPC can be used in correlation measurements.
However, an accurate modeling and characterization of the crosstalk are required. The developed
approach can be extended to analyze higher-order intensity correlation functions, which is easily
accessible just with a single MPPC detector. More importantly, the developed method suggests a
reference–free calibration for determining the crosstalk probability, which only relies on the
fundamental property of the coherent state. The further development of the method is a part of
the ongoing activity of quantum optics lab.
References
[1] Knill, E., Laflamme, R., Milburn, G.J., “A scheme for efficient quantum computation with linear
optics,” Nature, 409, 46–52 (2001).
[2] Mitchell M.W., Lundeen J.S., Steinberg A.M., “Super-resolving phase measurements with a
multiphoton entangled state,” Nature, 429, 161-164 (2004).
[3] R. H. Hadfield, “Single-photon detectors for optical quantum information applications,” Nature
Photonics, 3, 696-705, (2009).
[4] http://jp.hamamatsu.com/
[5] D. Kalashnikov, S.-H. Tan, M. Chekhova, L. Krivitsky, “Accessing photon bunching with a
photon number resolving multi-pixel detector,” Optics Express, Vol. 19 Issue 10, pp.9352-9363
(2011)
Magnetics Symposium 2011
DSI staff interacting with the symposium attendees.
With the support from Data Storage Institute, IEEE Magnetics Society Singapore Chapter has
been organizing several activities in the past. This year, the Singapore Chapter organized the
Magnetics Symposium 2011 from 3 – 5 October 2011 at DSI’s premises.
As a part of the event, distinguished IEEE Magnetics Society lecturers, Professor Masaaki
Futamoto (Chuo University, Japan) and Dr Axel Hoffmann (Argonne National Laboratory, USA)
were invited to deliver their lectures. Several scientists and researchers from local research
organizations such as the National University of Singapore (NUS), Nanyang Technological
University (NTU), Data Storage Institute (DSI), Institute for Materials Research and Engineering
(IMRE) and Western Digital (WD) Singapore also came to be present their work. Their talks
covered various fields ranging from magnetic recording and magnetic random access memory to
magnetocalorics, etc.
Another highlight of the event was the 2nd Annual Poster Competition for students. This year,
the poster competition was carried out over two days to provide students with more time to
interact with the judges and other visitors. The judges for the competition were Dr Robert
Hempstead (WD), Dr Nikolai Yakovlev (IMRE), Dr Joel Yang (IMRE), Professor Masaaki Futamoto
and Dr Axel Hoffmann. The winners from the first day were Law Jia Yan (NTU) and Lim Sze Ter
(DSI). The winners of the second day were Mojtaba Ranjbar (DSI) and Taiebeh Tahmasebi
(DSI). The event also injected a fun element, where the participants had to guess the winners.
Three students, Ma Fusheng (NUS), Law Jia Yan (NTU) and Lu Yunbo (NUS) made the best
guess for day 2 of the competition.
Laser Physics Workshop (LPHYS'11)
The 20th annual International Laser Physics Workshop (LPHYS'11) was held from July 11 to
July 15, 2011, in Sarajevo, Bosnia and Herzegovina.
DSI researcher Dr Dmitry Kalashnikov was invited to present his paper “Revealing Photon
Bunching with Multi Pixel Photon Counter”. His paper discusses the use of a multi-pixel photon
counter (MPPC) to measure photon statistics and its drawbacks due to crosstalk. He also
introduced an algorithm for obtaining the second order correlation function (g2) from any
spatially resolved multi-pixel photon-number resolving detectors (PNRD) and how it can help
mitigate the crosstalk issue to allow MPPC measurements to be more accurate.
Joint International Symposium on Optical
Memory & Optical Data Storage Workshop
(ISOM/ODS)
From Left: Dr Shi Luping (DSI), Dr Liu Bo (DSI) and Prof Din Ping Tsai (National
Taiwan University)
The Joint International Symposium on Optical Memory & Optical Data Storage (ISOM/ODS) was
held from 17 - 20 July 2011 in Hawaii, USA.
Senior scientist Dr Shi Luping was invited to present his paper “Nano Phase Change for Data
Storage and Beyond”. His paper talks focused on the investigation of nano-phase change in
terms of the materials’ different properties against the dimension. The paper also discussed
about the future development trend after scaling limitation has been reached.
The ISOM/ODS'11 is a forum for exchanging information on the status, advances, and future
directions in the field of optical memory and optical data storage. New developments in
holographic, multi-dimensional, near-field, super-resolution, and hybrid recording technologies
for the fourth generation systems were the main focus at this conference.
2011 International Conference on
Electrical Machines and Systems (ICEMS)
The 2011 International Conference on Electrical Machines and Systems (ICEMS) was held in
Beijing, China from 20 – 23 August 2011.
Two of the invited papers presented at the conference were by DSI researchers. Below is a
brief description of their presentations.
DSI scientist Dr Bi Chao was invited to present his paper “Influence of Axial Asymmetrical Rotor
in PMAC Motor Operation”. His paper showcases the numerical and testing results that confirm
the effectiveness of the unbalanced magnetic pull model in permanent magnetic AC motor with
the rotor aligned asymmetrically in axial direction.
Research scientist Dr Jiang Quan was invited to present his paper “Direct Design Approach of
Discrete PI Controller for Hard Disk Drive Spindle Motors”. His paper proposes a discrete small
signal model of spindle motors and introduces an effective approach to design its speed
controller according to the required settling time and speed fluctuation range.
Since 1987, the ICEMS is an international forum entirely devoted to electrical machines, power
electronics and systems where the community of specialists discusses the progress achieved
and the future developments in technologies, analysis, design, testing, operations, practical
applications, maintenance and teaching in the field of electrical machines, power electronics
and systems.
22nd Magnetic Recording Conference
(TMRC)
Top Row From left: Niu
Yiming (Seagate, ex-DSI
staff), Yuan Zhimin (DSI),
Xu Baoxi (DSI), Ma
Yansheng (DSI)
Bottom row From left:
Chen Qisuo (Seagate, exDSI staff), Han Guchang
(DSI), Liu Zhejie(DSI),
Wang Jianping (Univ of
Minnesota, ex-DSI staff)
The 22nd Magnetic Recording Conference (TMRC) was held in Minnesota, USA from 29 – 31
August 2011.
DSI presented six invited papers at the conference. Below is a brief description of the
presentations by the DSI researchers.
Dr Chan Kheong Sann presented his paper entitled “A Comparison of Analytical, Micromagnetic
and Statistical Channel Models for Patterned Media Recording at 4Tbpsi”. His paper focused on
implementing micromagnetic simulations for the purpose of characterizing the Grain Flipping
Probability (GFP) model for bit patterned media recording (BPMR), and made a comparison
between the micromagnetic, the GFP and the analytical models.
Dr Liu Zhejie presented his paper “Modeling Recorded Magnetization Distributions for Magnetic
Recording at Extremely High Density”. His paper discussed about a channel model which is
suitable for analysis of magnetic recording processes at extremely high density and is able to
produce magnetization patterns corresponding to long bits with an accuracy that is comparable
to micromagnetic simulations.
Dr Ma Yansheng presented his paper, “Experimental Study of Lubricant Depletion in Heat
Assisted Magnetic Recording”. His paper explained that heat assisted magnetic recording
(HAMR) requires lubricants that can withstand high temperatures to coat the magnetic
recording media surfaces otherwise the head-disk interface would fail. His paper also details the
experimental studies he conducted to measure lube depletion under laser irradiation in real
HAMR conditions.
Dr Yuan Zhimin presented his paper on “3D Effective Write Field Measurement on Spinstand”.
His paper proposed the use of even harmonic ripple effect to measure the recording
performance of the writer on spinstand. The results obtained from this proposal were further
discussed at the conference.
Dr Han Guchang presented his paper on “Self-biased Differential Dual Spin Valve Reader for
Future Magnetic Recording”. In this paper, he discussed the perfomances of a self-biased
differential dual spin valve (DDSV) reader as well as the challenges for its applications in
10Tb/in2 density and beyond.
Dr Xu Baoxi presented his paper titled, “Relationship between Near Field Optical Transducer
Efficiency and its Thermal Issues”. His talk focused on the investigation of dependences of
transducer efficiency and absorption on transducer structures and media structure with the
purpose of understanding the relationship between transducer efficiency and transducer laser
absorption, as well as the transducer temperature rise in heat assisted magnetic recording
head.
TMRC 2011 focused on magnetic recording heads and recording systems. Approximately 36
papers of the highest quality were presented at the conference.
European Symposium on Phase Change
and Ovonic Science (E\PCOS 2011)
The European Symposium on Phase Change and Ovonic Science (E\PCOS 2011) was held from
4 – 6 September 2011 in Zürich, Switzerland.
DSI scientist, Dr Zhao Rong was invited to present her paper “Material Selection for PCRAM
Integration”. Her paper discussed and provided an insight understanding and possible
approaches on achieving high density PCRAM array through tailoring the integration of PCRAM
cell and logic device by proper materials selections and interface controlling.
The E\PCOS is a platform for discussing the latest technology achievements in phase change
and ovonic science, and possible new application areas and to provide fruitful interactions
between opinion and technology leaders of the industry.
Recent Conferences/ Seminars/ Workshops
Participated In By Our Staff
12-1
8-12
JUN - JUL
2011, Benasque, Spain
AUG
2011, San Francisco, California
Quantum Information Workshop
20th USENIX Security Symposium
(USENIX Security '11)
20-8
JUN - JUL
2011, Como, Italy
School for Training in
Experiments with Lasers and
Laser Applications
27-1
JUN - JUL
2011, Singapore
2011 (ICMAT) International
Conference on Materials for
Advanced Technologies
10-13
JUL
2011, San Francisco
20-23
AUG
2011, Beijing, China
International Conference on
Electrical Machines and Systems
2011
22-26
AUG
2011, France
SENSORCOMM 2011-The Fifth
International Conference on
Sensor Technologies and
Applications
29-31
ITRS 2011 Summer Workshop
AUG
2011, Minnesota, USA
11-15
International Conference on
Magnetic Recordings Heads and
Systems (TMRC 2011)
JUL
2011, Sarajevo, Bosnia and
Herzegovina
20th International Laser Physics
Workshop 2011
12-15
JUL
2011, Sydney, Australia
Compumag 2011
17-21
JUL
2011, Hawaii, USA
International Symposium on
Optical Memory and Optical Data
Storage
31-5
JUL - Aug
2011, San Jose, CA
2011 International Joint
Conference on Neural Networks
4-6
SEP
2011, Switzerland
European Symposium on Phase
Change and Ovonic Science
5-8
SEP
2011, Rome, Italy
NUSOD 2011 - NUSOD 2011 11th International Conference on
Numerical Simulation of
Optoelectronic Devices
12-14
SEP
2011, Rome, Italy
5th International Conference on
Integrated Modeling and Analysis
in Applied Control and
Automation
12-16
26-30
SEP
2011, Suzhou, China
SEP
2011, Texas, USA
Progress In Electromagnetics
Research Symposium (PIERS
2011)
IEEE Cluster 2011
19-22
SEP
2011, Nagoya, Japan
SEP
2011, Santa Clara, CA
28-30
Solid State Devices and Materials
SNIA Storage Developer
Conference 2011
A Research Institute of the Agency for Science, Technology and Research (A*STAR)