PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
SST11CP16 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. It is easily configured for high-linearity, high-efficiency
applications, with superb power-added efficiency, while operating over operating
over the 5.1-5.9 GHz frequency band. SST11CP16 has the excellent linearity
required by the 802.11a/n/ac applications. SST11CP16 provides 19 dBm with
less than 1.8% EVM using 802.11ac modulation, with 80 MHz bandwidths and
351 Mbps data rate. It meets 802.11a spectrum mask requirements at 25 dBm
and 802.11n HT20 spectrum mask at 24.5 dBm. This power amplifier also features easy, board-level usage along with high-speed power-up/-down control
through a single reference voltage pin. SST11CP16 is offered in a 16-contact
XQFN package with 0.5mm maximum thickness.
Features
Applications
• Small package size
• WLAN (IEEE 802.11a/n/ac)
– 16-contact XQFN (3mm x 3mm x 0.5mm max thickness)
• HyperLAN2
• Multimedia
• Operating voltage
– VCC = 5.0V
• High linear output power across 5.1-5.9 GHz @ 5V:
– 802.11a OFDM Spectrum mask compliant up to 25
dBm typically
– 802.11n HT20 OFDM Spectrum mask compliant up to 24.5
dBm typically
– 3% EVM up to 21.5 dBm, typically for 802.11a, 54 Mbps signal
– 2.5% EVM up to 19 dBm, typically for 802.11n, 65 Mbps signal
– 1.8% EVM up to 19 dBm, typically for 802.11ac, 351 Mbps,
80 MHz BW signal
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~11% @ POUT = 23 dBm for 802.11a OFDM, 5V VCC
• Gain:
– Typically 30 dB gain across band 5.1-5.9 GHz
• Idle current
– ~250 mA ICQ
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (~1 µA)
• On-chip power detection
– 20 dB linear dynamic range
• 50 on-chip input match and simple output match
• All lead-free devices are RoHS compliant
©2012 Silicon Storage Technology, Inc.
www.microchip.com
DS75050A
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Product Description
SST11CP16 is a high-linearity power amplifier with low power consumption and is based on the highlyreliable InGaP/GaAs HBT technology. It can be easily configured for high-linearity, high-efficiency
applications, with superb power-added efficiency, while operating over the 802.11a frequency band for
U.S. and European markets (5.1-5.9 GHz).
SST11CP16 has excellent linearity, typically ~3% added EVM at 21.5 dBm output power for 54 Mbps
802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 25 dBm. SST11CP16 provides 19
dBm with less than 1.8% EVM, using 802.11ac modulation with 80 MHz bandwidth and 351 Mbps data rate.
This power amplifier also provides a wide dynamic-range, linear power detector that is temperature and
VSWR insensitive. This integrated power detector can lower the cost of power control.
The power amplifier IC also features easy board-level operation along with high-speed power-up/down control. Low reference current (total IREF <5 mA) makes the SST11CP16 controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST11CP16 ideal for the final stage power amplification in 802.11a/n/ac WLAN transmitter
applications.
The SST11CP16 is offered in 16-contact XQFN package with 0.5 mm maximum thickness. See Figure
2 for pin assignments and Table 1 for pin descriptions.
©2012 Silicon Storage Technology, Inc.
DS75050A
2
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
VCC1
VCC2
VCC3
NC
Functional Blocks
16
15
14
13
NC 1
12 NC
RFIN 2
11 RFOUT
Input
Match
RFIN 3
Bias
Control
5
6
7
8
VREF2
VREF3
NC
Power
Detection
VREF1
VCCB 4
10 RFOUT
9 DET
75050 B1.0
Figure 1: Functional Block Diagram
©2012 Silicon Storage Technology, Inc.
DS75050A
3
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
NC
VCC1
VCC2
VCC3
NC
Pin Assignments
16
15
14
13
12 NC
1
Top View
RFIN
2
RFIN
3
VCCB
4
11 RFOUT
(Contacts
facing down)
10 RFOUT
RF and DC GND
9 DET
8
NC
7
VREF3
6
VREF2
VREF1
5
75050 P1.0
Figure 2: Pin Assignments for 16-contact XQFN
Pin Descriptions
Table 1: Pin Description
Pin Name
Ground
Type1
Symbol
GND
Pin No.
0
NC
RFIN
RFIN
VCCb
VREF1
VREF2
VREF3
NC
DET
RFOUT
RFOUT
NC
NC
VCC3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
No Connection
No Connection
Power Supply
PWR
Function
The center pad should be connected to RF ground with several
low inductance, low resistance vias.
Unconnected pin
RF input, DC decoupled
RF input, DC decoupled
Supply voltage for bias circuit
Current Control
Current Control
Current Control
Unconnected pin
On-chip power detector
RF Output, DC decoupled
RF Output, DC decoupled
Unconnected pin
Unconnected pin
Power supply, 3rd stage
VCC2
VCC1
15
16
Power Supply
Power Supply
PWR
PWR
Power supply, 2nd stage
Power supply, 1st stage
No Connection
Power Supply
I
I
PWR
PWR
PWR
PWR
No Connection
O
O
O
T1.1 75050
1. I=Input, O=Output
©2012 Silicon Storage Technology, Inc.
DS75050A
4
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 4 through 8 for RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 4, 14, 15, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.9V
Supply Voltage at pins 5,6, and 7 (VREF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Maximum Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
VCC
Industrial
-10°C to +85°C
5.0V-5.5V
T2.1 75050
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
VCC
Supply Voltage
5.0
V
ICC
Supply Current @ POUT = 22 dBm
VCC = 5.0V
340
mA
ICQ
VCC Quiescent Current
VCC = 5.0V
250
IOFF
Shut down current
1.0
2.85
V
2
mA
VREG
Recommended Reference Voltage
IREG
Total Reference Current
VDET
RF Power Detector Voltage Output level
©2012 Silicon Storage Technology, Inc.
0.4
10
1.1
DS75050A
5
mA
µA
V
T3.0 75050
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Table 4: AC Electrical Characteristics for Configuration, VCC = 5.0V1, VREG= 2.85V
Symbol
Parameter
Min
FL-U
Frequency range
5.1
Linear Power
Typ
Max
Unit
5.9
GHz
Output power at 3% EVM at 54 Mbps OFDM signal, 802.11a
21.5
dBm
Output power at 2.5% EVM at 54 Mbps OFDM signal, 802.11a
20.5
dBm
Output power at 1.8% EVM at 351 Mbps OFDM signal, 802.11ac
19
dBm
Output power level with 802.11a mask compliance
25.5
dBm
ACPRn20
Output power level with 802.11n HT20 mask compliance
24.5
dBm
Gain
Power gain from 5.18–5.9 GHz
30
dB
Input Return
Loss
RF Input Return Loss
10
dB
2FO
Second Harmonic Power Level
-26
dBm/MHz
3FO
Third Harmonic Power Level
-35
dBm/MHz
ACPRa
T4.1 75050
1. EVM is measured with equalizer channel estimation set to “Sequence Only”
©2012 Silicon Storage Technology, Inc.
DS75050A
6
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
S11 versus Frequency
S12 versus Frequency
0
-5
S12 (dB)
S11 (dB)
- 10
- 15
- 20
- 25
0
2
4
6
8
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
12
2
4
6
8
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency
S22 versus Frequency
40
10
12
0
20
-5
S22 (dB)
S21 (dB)
0
-20
-40
-10
-15
-20
-60
-80
0
2
4
6
8
10
Frequency (GHz)
12
-25
0
2
4
6
8
10
12
Frequency (GHz)
75050 S-Parms.1.0
Figure 3: S-Parameters
©2012 Silicon Storage Technology, Inc.
DS75050A
7
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Typical Performance characteristics
Test Conditions: VCC = 5.0V, TA = 25°C, VREG = 2.85V, 802.11a 54 Mbps OFM Modulation unless otherwise noted
EVM versus Output Power
10
9
5180 MHz
8
EVM (%)
7
5500 MHz
6
5850 MHz
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
75025 F3.1
Figure 4: 802.11a 64QAM, 54 Mbps EVM versus Output Power, measured with equalizer
channel estimation set to “Sequence Only”
EVM versus Output Power
10
EVM (%)
9
8
Freq=5.18 GHz
Freq=5.50 GHz
7
Freq=5.85 GHz
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Output Power (dBm)
75050 F8.0
Figure 5: 802.11ac 256QAM, 351 Mbps EVM versus Output Power, measured with equalizer channel estimation set to “Sequence Only”
©2012 Silicon Storage Technology, Inc.
DS75050A
8
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Supply Current (mA)
Supply Current versus Output Power
400
390
380
370
360
350
340
330
320
310
300
290
280
270
260
250
240
230
220
210
200
5180 MHz
5500 MHz
5850 MHz
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
75025 F4.1
Output Power (dBm)
Figure 6: Power Supply Current versus Output Power, VCC = 5.0V, VREG = 2.85
Power Gain versus Output Power
33
32
31
Power Gain (dB)
30
29
28
27
26
5180 MHz
25
5500 MHz
24
23
5850 MHz
22
21
20
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
75025 F5.1
Figure 7: Power Gain versus Output Power, VCC = 5.0V, VREG = 2.85
©2012 Silicon Storage Technology, Inc.
DS75050A
9
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Detector Voltage versus Output Power
1.20
1.10
Detector Voltage (V)
1.00
0.90
0.80
0.70
5180 MHz
0.60
0.50
5850 MHz
0.40
5850 MHz
0.30
0.20
0.10
0.00
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
75025 F6.1
Figure 8: Detector Voltage vs Output Power, VCC = 5.0V, VREG = 2.85
©2012 Silicon Storage Technology, Inc.
DS75050A
10
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
VCC
0.1 µF
0.1 µF
0.1 µF
16
15
14
4.7 µF
13
1
12
2
50Ω
11
11CP16
RFIN
3
10
4
9
0.4 pF
50Ω
1.1 mm
50Ω
RFOUT
0.5 pF
VDET
0.1 µF
5
6
12Ω
178Ω
7
8
100Ω
180 pF
VREG
75050 F7.1
Figure 9: Typical Application for High-Linearity 802.11a/n/ac Application, VCC = 5.0V,
VREG = 2.85
©2012 Silicon Storage Technology, Inc.
DS75050A
11
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Product Ordering Information
SST
11 CP
XX XX
16
XX
-
QXCE
XXXX
Environmental Attribute
E1 = non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QX= XQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
C = 3.0-5.0V
Frequency of Operation
1 = 5.1-5.9 GHz
Product Line
1 = RF Products
1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS
Compliant”.
Valid combinations for SST11CP16
SST11CP16-QXCE
SST11CP16 Evaluation Kits
SST11CP16-QXCE-K
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combinations.
©2012 Silicon Storage Technology, Inc.
DS75050A
12
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Packaging Diagrams
TOP VIEW
SIDE VIEW
BOTTOM VIEW
See notes
2 and 3
0.15
Pin 1
Pin 1
1.7
3.00
0.075
1.7
0.5 BSC
0.075
0.45
0.35
0.05 Max
3.00
0.075
0.50
0.40
0.30
0.18
1mm
Note: 1. Complies with JEDEC JEP95 MO-248, variant XEED-4 except external paddle nominal dimensions.
2. From the bottom view, the pin 1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and to VSS.
This paddle must be soldered to the PC board; it is requiresd to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
16-xqfn-3x3-QXC-1.0
Figure 10:16-contact Extremely-thin Quad Flat No-lead (XQFN)
SST Package Code: QXC
©2012 Silicon Storage Technology, Inc.
DS75050A
13
08/12
PR
OP
R
CO IE
NF TAR
ID
Y
E N AN
TIA D
L
5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16
A Microchip Technology Company
Preliminary Specifications
Table 5:Revision History
Revision
A
Description
•
Initial Release of Data Sheet
Date
Aug 2012
ISBN:978-1-62076-473-2
© 2012 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
©2012 Silicon Storage Technology, Inc.
DS75050A
14
08/12