BROADBAND DISTRIBUTED AMPLIFIER
ADM-0126MSM
The ADM-0126MSM is a broadband, efficient GaAs PHEMT distributed
amplifier with an integrated bias tee in a 4mm QFN surface mount package.
It offers 11 dB typical gain and 17 dBm typical output power at 1 dB
compression for only 75 mA of current. It is operated with a 5-7 volt positive
bias and an optional current reducing negative voltage. Applications include
amplification of LO drive signals for ‘L’, ‘M’, and ‘I’ level mixers, clock signals,
and other general purpose driver applications in electronic warfare and test
and measurement. It is an excellent alternative to competing GaAs PHEMT
distributed amplifiers.
Features







Optimized for use as a T3 LO buffer amplifier
Suitable for driving L, M, and I diode mixers
Optional Positive Bias Operation
Integrated Blocking Capacitors and Inductors
rd
th
3 and 5 Harmonic Generation
Broadband 50 Ω Matching
Unconditionally Stable
Electrical Specifications - Specifications guaranteed from -55 to +85C, measured in a 50-Ohm system.
Parameter
Frequency
Min
Typ
Max
+5
+10
+12
(GHz)
Input for Saturated Output (dBm)
Output 1 dB Compression (dBm)
+15
Saturated Output Power with negative bias
(dBm)
+17
Small Signal Gain with negative bias (dB)
11
1-26.5
Return Loss (dB)
10
Noise Figure (dB)
4
Third Order Output Intercept Point (dBm)
25
Bias Requirements (mA)
Vd: +5.0 to +7.0 / Vg: -0.20 Volts
75
Vd: +5.0 to +7.0 / Vg: 0 Volts
90
Part Number Options
Model Number
ADM-0126MSM
Description
1
EVAL-ADM-0126MSM
1
Surface Mount 4mm QFN
Connectorized Evaluation Fixture
Note: For port locations and I/O designations, refer to the drawings on page 2 of this document.
GaAs MMIC devices are susceptible to Electrostatic Discharge. Use
proper ESD precautions when handling these items.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
Page 2
ADM-0126MSM
Frequency 1 to 26.5 GHz
Functional Diagram
Typical Performance
(Performed at +5/-0.2V and 27°C unless otherwise indicated)
Saturated Output Power (dBm)
25
Small Signal Gain (dB)
20
20
10
15
10
0
5
-10
0
Vd=+7V
-5
-20
Vd=+5V
-10
-30
0
5
10
15
20
25
30
0
5
10
Frequency (GHz)
Output P1dB (dBm)
25
15
20
25
30
20
25
30
Frequency (GHz)
Group Delay (ps)
500
450
20
400
15
350
10
300
5
250
0
200
Vd=+7V
-5
150
Vd=+5V
-10
100
0
5
10
15
Frequency (GHz)
20
25
30
0
5
10
15
Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0126MSM
Page 3
Frequency 1 to 26.5 GHz
Small Signal Return Loss (dB)
5
Input
Output
0
Return Loss (dB)
Noise Figure (dB)
10
9
8
7
6
-5
5
4
-10
3
2
-15
1
0
-20
0
5
10
15
20
25
30
0
5
10
Frequency (GHz)
Reverse Isolation (dB)
0
15
20
25
30
Frequency (GHz)
Current Consumption (mA)
130
Vg = 0V, Pin = -35 dBm
Vg=-0.2V, Pin = -35 dBm
Vg = 0, Pin = 10 dBm
Vg = -0.2 V, Pin = 10 dBm
120
-10
110
100
-20
90
-30
80
70
-40
60
50
-50
40
-60
30
0
5
10
15
20
25
30
Frequency (GHz)
3
4
5
6
7
8
Vd (V)
OIP3 (dBm)
40
35
30
25
20
15
10
5V Bias
5
8V Bias
0
0
10
20
30
40
Frequency (GHz)
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0126MSM
Page 4
Frequency 1 to 26.5 GHz
Outline Drawing
.154
[3.90]
.028 Typ
[.70]
.035
[.90]
19
.154
[3.90]
ADM
0126M
D/C
XXXX
.098 Sq.
[2.50]
20
21
22
23
18
1
17
2
16
.020 Typ
[.50]
3
Die Paddle
15
4
14
5
13
6
12
11
10
9
8
.012 Typ
[.30]
7
.013 Typ
[.32]
PROJECTION
.003 Typ
[.08]
INCH
[MM]
24
Substrate material is Ceramic.
I/O Leads and Ground Paddle are 1.4+0.6 microns Au over 1.3 microns Ni.
All unconnected pads should be connected to PCB RF ground.
.000
.010
.020
.030
.151
.161
.057
.065
.077
.085
.096
.104
.116
.124
.134
.027
.041
.000
.010
PCB Footprint Drawing
.027
.040
.057
.065
.077
.081
.085
.095
.101
.115
.047
.061
.067
.077
.085
.096
.104
.114
.121
.134
.131
.142
.151
.161
.121
.131
.142
.101
.081
.054
.061
.020
.031
Ø.010 Plated thru Via,
41 PL
QFN-Package Surface-Mount Landing Pattern
Click here for a DXF of the above layout.
Click here for leaded solder reflow. Click here for lead-free solder reflow.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
Page 5
ADM-0126MSM
Frequency 1 to 26.5 GHz
Pin Descriptions
Function
Description
1-3,5-9,12-15,1719,21,23,24
Pin Number
NC
These pins are not connected internally. Datasheet
performance is tested with NC pins grounded.
4
RF in
This pin is AC coupled and matched to 50 Ω.
11
Vg
Gate control for the amplifier. Adjust to achieve Idd = 85 mA
(should be near -0.2V). External bypass capacitors and Q
reduction resistor are recommended.
16
RF out
This pad is AC coupled and matched to 50 Ω.
20
Vd
Power supply voltage for the amplifier. External bypass
capacitors are required.
22
Vg2
Optional gate control if AGC is required. Leave Vg2 open
circuited if AGC is not required. Typical Vgg2 = -2V to 2.4V
10, Paddle
GND
Ground pad should be connected to RF/DC ground with low
electrical and thermal resistance.
Interface Schematic
Absolute Maximum Ratings
Parameter
Maximum Rating
Positive Bias Voltage
9V
Positive Bias Current
200 mA
Negative Bias Voltage
-2 V
Negative Bias Current
2 mA
RF Input Power
+15 dBm
Power Dissipation
875 mW
ESD (Human Body Model)
Class 0
Operating Temperature
-55ºC to +85ºC
Storage Temperature
-65ºC to +150ºC
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
ADM-0126MSM
Page 6
Frequency 1 to 26.5 GHz
Application Circuit
Vd
Vg2
.1 μF
24
RF In
.1 μF
100 pF
23
22
21
20
100 pF
19
1
18
2
17
3
16
4
15
5
14
6
13
8
7
9
10
11
12
Vg
10 Ω
RF
Out
DC/RF
Ground
100 pF
.1 μF
Biasing and Operation
RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm
sources and loads. No external bias capacitor or inductor is required.
Vg /Vg2 – Bias on these pins is optional. Biasing of -0.2 V on Vg can reduce the current draw from Vd by 35 mA (from 105 mA to 70
mA) and power consumption by 245 mW (from 735 mW to 490 mW). As with Vd, it is recommended that the user supply a
broadband, low impedance signal path to ground on this pin by providing multiple capacitance values with different resonant points
to ground. It is also recommended to supply a 10 Ω resistor in series with any bypass capacitor with a value above 1 nF for Vg to
eliminate self-resonant points in the circuit.
Vd- Bias supply on Vd should be voltage limited below 9 V and current limited below 200 mA at all times. The operational bias
voltage should be between 5 V and 8 V for full gain, efficiency, and linearity. In general gain, linearity, and output power will increase
marginally with increased voltage from 5 to 8 V. As with Vg/Vg2, it is recommended that the user supply a broadband, low
impedance signal path to ground on this pin by providing multiple capacitance values with different resonant points to ground.
DC/RF Ground – The ground paddle of the QFN should be connected to a low noise RF and DC ground with very low electrical and
thermal resistance for high frequency operation and thermal heat sinking.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15
BROADBAND DISTRIBUTED AMPLIFIER
Page 7
ADM-0126MSM
Frequency 1 to 26.5 GHz
Evaluation Board
The evaluation module follows Marki standard assembly and evaluation procedures to give optimal performance for datasheet
characterization. Actual performance will depend on substrate material, bypass capacitors, resistors, connectors, quality of bias
current/voltage source, and assembly process.
Evaluation Board Bill of Materials
Item
Connectors
Description/Part Number
Southwest 214-510SF
Bias Pins
Kovar
Housing
Aluminum
Circuit
0.1 uF Capacitor
10 Ω Resistor
100 pF Capacitor
A26LGP
8 mil Rogers 4003
AVX 0402YD104KAT2A
Venkel CR0201-20W-100JT
KEMET C0402C101K4GACTU
ADM-0126MSM
DATA SHEET NOTES:
1. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets.
Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability
whatsoever arising out of the use of or application of any product.
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
11/16/15