Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 1991 Electrostatic discharge - understanding and controlling the phenomenon: A Handbook for packaging professionals Deanna Jacobs Follow this and additional works at: http://scholarworks.rit.edu/theses Recommended Citation Jacobs, Deanna, "Electrostatic discharge - understanding and controlling the phenomenon: A Handbook for packaging professionals" (1991). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by the Thesis/Dissertation Collections at RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact ritscholarworks@rit.edu. ELECTROSTATIC DISCHARGE-UNDERSTANDING AND CONTROLLING THE PHENOMENON: A HANDBOOK FOR PACKAGING PROFESSIONALS By Deanna M. Jacobs A Thesis Submitted to Department College in of partial of Applied Packaging Science fulfillment for of Science and Technology the requirements the degree MASTER OF Rochester the of SCIENCE Institute 1991 of Technology Department of Packaging Science College of Applied Science and Technology Rochester Institute of Technology Rochester, New York certificate of Approval M.S. DEGREE THESIS The M.S. Degree thesis of Deanna M. Jacobs has been examined and approved by the thesis committee as satisfactory for the thesis requirements for the Master of Science Degree David L. Olsson John M. Fin Daniel L. Goodwin May 15, 1991 ELECTROSTATIC DISCHARGE-UNDERSTANDING AND CONTROLLING THE PHENOMENON: A HANDBOOK FOR PACKAGING PROFESSIONALS I, Deanna M. Jacobs, hereby grant permission to the Wallace Library of the Rochester Institute of Technology to reproduce my thesis in whole or in part. Any reproduction will not be for commercial use of profit. Deanna M. Jacobs May 2, 1997 Electrostatic Discharge Controlling the A Handbook Understanding and Phenomenon: for Packaging Professionals By Jacobs Deanna M. 1991 ABSTRACT This of thesis electrostatic is designed to be discharge electrically-sensitive handling of sensitive (ESD) and electronic devices a handbook its devices. occurs at the on phenomenon deleterious effects Packaging every step on and in the Once the hardware is designed (and assembly of such devices. this may include some ESD-protective mechanisms) , it is the packaging of ESD-sensitive devices that determines their ultimate or fate: being 100% reliable, being among the "walking useless. being completely wounded," Electrostatic discharge is a phenomenon experienced in many industries from foods to pharmaceuticals, aerospace to communications, medical packaging to most predominantly the optics, and of understanding in critical This ESD is electronics essential in some industries, others. handbook industry. phenomenon military to industry. An explosives, is focuses on the problems of the electronics others, and it is problems the of ESD. There is a plagued, critically, general lack of understanding of the problems caused by electrostatic discharge. The unfortunate side effects of this It an industry often lack and touches all with of understanding are the purchase of inappropriate materials little impact on rising damage to electrically-sensitive components. play that an knowledgeable packaging Competent, important role in ensuring the professionals successful manufacture, transport of sensitive electronic devices. It is the purpose of this handbook that packaging professionals have knowledge of this subject prior to being faced with all the challenges of ESD control. handling, packaging, and CONTENTS Certificate of Instructions n Approval iii Regarding Copying iv Abstract Table v Contents of 1 Preface Chapter 1 Chapter 2 Chapter 3 Chapter 4 - - - - of The Nature of Electricity Generating Static Prime and Chapter 5 Chapter 6 Chapter 7 Glossary - - - of ESD-Related Damage The Magnitude Sources of Damage, 19 Failure Models Mechanisms ESDCP: 3 12 Electricity 30 Electrostatic Discharge Control Program 45 ESD 75 Protective Materials Evaluating ESD Protective Materials Terms . . .90 94 References Additional ... 98 Works Consulted 99 Appendices 104 v PREFACE Why (ESD) discharge devices texts manuals include may be to be fate: ultimate isn't packaging is that foods that 100% reliable, a useless and handbook on professional. to in to be training with work became every clear. in step is designed (and is the it mechanisms) aids the of their determining "walking or wounded", to to essential should . ESD many the there be and handbook its effect types to to critical the 1 a phenomenon industries of optics, understanding in others. of devices from medical and An phenomenon sensitive on is communication, industry. on specifically for the discharge military industries, a written aerospace electronics some .is different explosives, in (ESD) that Electrostatic pharmaceuticals, predominantly, discharge in experienced packaging Why Once the hardware devices who at occurs few few the general reviewing "dead-on-arrival" completely There is devices a by respond After question ESD-protective some sensitive of packaging the to sensitive devices. those of in people answer To reading studying after and at aimed the after subject, electronic sensitive trite. seem may the on electrostatic of professional? one" subject handling and assembly this the devices, sensitive on phenomenon effects packaging isn't handbooks and Packaging the there on the on its deleterious article upon existing handbook a for written article the and "because saying be there should most of ESD electrostatic written for the be. handbook This industry. is It often plagued, information who are its with the is There professionals unfortunate are the the rising damage of effects side for estimates directed be to materials sensitive fundamental information foundation for Competent, knowledgeable important and transport knowledge control the role is right prior more developing in to sensitive being efficient expertise the while successful with quality being faced the all It the the with on the solid a of ESD. a very handling, Having challenges that by is hoped play manufacture, oriented with impact control devices. of understanding build to (ESD) caused little professionals electronics faced and in is you dearth professional which expertise packaging insuring of on of components. that this handbook will provide the packaging correct and of discharge problems lack this those to real a the with working inappropriate of purchase seems and ESD. electrostatic about should electronics others all of problems there the of touches that and one not problems included in this text ramifications. The the on industry just beginning to learn knowledgeable ESD. an focus critically, The and will is there Because professional? packaging trying challenges. of to this ESD gain 1 CHAPTER The magnitude not well two known are warranted. the a major need The for In the that order impart field. of at sites electronic cannot to begin This some to devices one failure handling inception case starling truths critical as the 3 some in the wafers to but who used and greater as the parts. failure quantities. created metal damage their it of the problem. problems and ESD. The parts, great the environments ordered complimentary scenario, about in those well as sensitive achieved hundred safe are users presently failure. more (microcircuits) worst static to consistent not are industries, understand from their a in possibly be consider is the 1% and controls equipment reliability, procedures low them illustrate The end primary components where communications and proper (CMOS) to the are for these devices. equipment electrostatics, silicon who There interest particular electronic as look for approximately military, rates such source aerospace -Without those many individuals. of are who be implemented even not by is industry electronics decrease ESD-related damage to may damage in the understood individuals protection industry ESD is well devices delicate provide related professional: packaging in nor of groups ESD of DAMAGE ESD-RELATED OF MAGNITUDE THE - will oxide ESD use by can in the quickly to From wafers the time the By CMOS a the device, silicon of critical. As will percentage of of of failure. the as of the by life damaged the 'zinged' or The latently 'walking of happen? the great How 36 leaving damaged completely at intermittent: any will moment out of commission. damaged, has or never one 'zapped' to to The fail. ten catastrophic material circuits to total have been reliable have joined the unpredictable as far When will failure material may fail Failure may be is unquestionably it point onset, malfunctioning the moment, make is Latent failure imposes the A chip that has been the potential testing system, only the Will failure happen? working fine chip that has been lead to microcircuits failure be? and to the the potentially rendering them wounded* unknown. severe will the remaining 90 of At cycle. 'zapped' ESD damage has damaged for high a scenario, are produced microcircuits percent ('slicers ESD damage to following performing their intended functions. fear A damage to Sixty microcircuits. ranks seen microcircuits This means destruction. latently be alone medium silicon medium or substrates assemblers affecting their total severely percent the the basic wafers, the microship reach loss the dicers') field 'zinged', all eventually fail and next. permanently or latently the way through in the field. the failures Latent chip is the cause for the responsible is dimmer than usual, chip is part of part such of an the intermittent behavior The remaining will become will be IC's packages) to approximately At 22 'stuff the burn-in station, the replacements. This 84% it worst of is the not case A be at may 10 - From be a the be work 3 DIP forwarded loss a 1% to a sub-assembly 15% scenario loss has a failed how many, if be can final (see any, is yield chart of typically to 1-A) those 16 of 16 . only for pack leaving station as the this field field. devices; working Keep in devices who to At seen. the 25 in-line storage in yield populators work expected wafers occur, board or this (dual can From the stations. of they where overall an loss to 30% tubes into 10% - or such shuttle, stage 100 original in aircraft, problems. Another . than go space formatting packaged stage to devices have known (IC's) If that critical. military the as the at a on light PC and the your critical packaged will IC's less boards now circuits this boards lead to are to they where computer damage. ESD survive distribution. point wafers on latently damaged a is far from applications could integrated lost will 36 light situation on-board aerospace "on" red If concern. greatest mind are that LOSS YIELD 100* ZAP 10% 90! ZING 60% LOSE 30% LOSE 3-10% DIP LOSE 2-20% POPULATION LOSE 1% BURN-IN LOSE 10-15% 36^ TO SLICE AND DICE 25% TO DISTRIBUTION 22% BOARDS 20% TO 18% 16% FINAL 84% FAILED YIELD DEVICES 1-A CHART 6 IN THE FIELD 7 latently failure 1% a manufacturers an to attempt field data, losses The produce on few a loss low of earth in great any capital orbit if dollars; and, the "housecall" Why do the than and they a smaller sensitivity, The some a is faster it may some real significant very the cost associated with be of If and of this be tens dollars. from 1500 less voltage to less voltage to damage "turn on" one angstroms an as of of Now in millions of repair it, dollars. ESD seen to be more urgent now have become geometries more capacity to 800 means (1) . (IC) . smaller greater less with and area. thinner . It It will angstroms) integrated chip well is fails board launched to millions Smaller switching, and cent, If a board carrying the Cell geometries ago? time. could could hundreds 1/2 maybe thousands cost alarming. shuttle cost small, Or is it? becoming years with is concern. space would ten cases from statistics Metallization and oxide thicknesses are getting thinner (in quality, many failed devices in produce ones. good chip satellite, problems were will for demands those in industry. chip fails catastrophically, the the industries that look for 1-A, indicate that chart involved worth a mind meet of microcircuits seen are To rate. seen capital hardly Also, keep in damaged. takes take INFORMAL SUMMARY OF STATIC LOSSES MIN BY LEVELS* MAX % % AVE % COMPONENT MANUFACTURER 4 96 16-22 SUB-CONTRACTOR 3 70 9-15 CONTRACTOR 2 35 8-14 USER 5 70 27-33 (FIELD) CHART * STEVE ESD HALPERIN PROBLEMS" - "FACILITY 1-B EVALUATION: ISOLATING ENVIRONMENTAL "At McDonnell-Douglas to continue less to sensitive become Not and more damage interference well a 40% of all ESD up to are electronic 70% the plentiful. and people everyday only a the of sources The worst become movement few furniture, of the parts As see, will apply failures for generators sources of static cigarette bins, is very of simple highly all of electricity: to build up 30 and Normal clothing, cups, static . insulators, following walking - to (4) common static. styrofoam in transit, EOS" are the short sensitive as are charges a for average generated and wrappers, vibration the Sources static any on in device are results melted or that categorized charges? of the as Electrical . puncture Place For parts often facilitator with and accounts are later) subject device. current static combined it the intermittent to microscopic failures. part devices as electromagnetic an creates this actual within to regard (a mini-lightning bolt) contribute may on in . also overstress the plastics, containers, you and "Electrical circuit. What spark equipment of piece (More may be the the by caused which pulse engineer packaging environments discharge spark a will technologies challenges work safe spark or failures. (EOS) overstress area (EMI) hard as but device, a The are components avionic Newer . more (3) sensitive more (2) and static and the of sensitivities. more the current can only face to protection component the 60% - volts" 100 than accentuate continue will 50% over are shoes, packaging and sitting. charges high enough table to damage sensitive 1-C) devices, assemblies, and equipment . ' ikil A highly t \ magnified closeup showing damage 10 caused by ESD. (see TABLE C TYPICAL CHARGE GENERATORS TYPE ITEM Formica* Finished Wood Synthetic Mats Work Surfaces Ungrounded Metal Glass or Fiberglass Fiberglass Vinyl, Other Plastics Ungrounded Metal Finished Wood Chairs Clean-Room Garments Finger Cots Gloves Wool Clothing Synthetics Shoes and Boots Carpeted Vinyl Waxed Floors Polyethylene Bags Bubble Pack Material Foam Packaging Materials Packaging Pellets Plastic Trays and Boxes Conveyors Drive Belts Machinery Manufacturing Processes Nylon Scrub Brushes Nonconductive Liquids High Velocity Air Flow Temperature Chambers Environmental Ovens Trademark of L. E. Carpenter & Co. 1-C 11 CHAPTER 2 THE - blocks building particles: of of The of nucleus Fundamentally, these the are revolving around the 19 C. atom negate A . in the neutral energy is electrons mass The of mass an of electron to the equal protons. and orbits concentric of 1.7 or in electron electrons (9.1 10"27 charge charge 2000 times KG. The of because and of larger proton is 10" x protons the an 10"19 x is +1.6 it number balance, 10Ci^/KG) x (-1.6 except the electrons charge about x equals in or neutral, is of number electric of amount proton a The orbit. valence existing considered each very smallest When the number is small a mass numerically same have the C) the Electrons loosely held in found . nucleus. contains are or are atom protons. coulomb Electrons 2-A) positive, are protons neutral, the various and neutrons of composed an state and is the is are negative. natural electron atom diagram (see elements our us give are subatomic The neutrons. and protons, three basic of composed are Atoms space. occupies and mass and neutrons electrons its matter electrons, combinations than ELECTRICITY is anything that has Matter In OF NATURE the charges other. atom is equal occupy stable to the and sum concentric has of a the rings, certain energies or 12 amount of shells, the of energy. electrons. around the This The nucleus 13 each and ring from has atom an is the quota losing lose If the has a atom net net gains charge materials. that up . less gives and A material conductive up is is on always is called a are more key a the is or gain material readily its may resistant a about some conductivity. that take reversing Keep in (see mind chart materials material a conductive property than the has readily state. relative it , it , If Materials called are neutral a ion. protons) ion. negative conductive to atoms electrons) positive outnumber very How outer gaining which outnumber electrons to others. the now (insulative) but by electrons If the of capable process ring around many inert. High . now insulativity than electrons is called returning or the 2-B) and take electrons, conductivity is is so is electrons levels. Each by to be it (protons Non-conductive activity that 3-A) give and said The energy orbit. an level energy nucleus. occupied electrons, (electrons or up is atom diagram charge electrons give only be electrons positive negative or (see loses atom the This greatest to maintain can of the the Ionizations electrons easily on quota electrons. or and is filled, its from have required quota level. energy distance nucleus are a lacks shell the levels energy different a its to proportional farther has takes on and or Nucleus Electrons Electrons and nucleus of an atom DIAGRAM 2 -A Nucleus Energy shells and the quota of electrons each shell DIAGRAM 14 2-B for 15 The outermost These gain they occurred excited state keep in mind. Valence held is free lose form that other to to a with the atom, is and charges charged. repel diagram no 2-C) each one If (It in a The other; of which - an concept to (a) Like + external will actually is this movement conductor) have some a A exists. one electric repel tendency Unlike charges of of are states attract charges attract <c> charges pair positive, charges (6) Force between Some . distribution equal and unlike charges the to enough . charges repel this in atom 2-C Like energy opportunity to transfer an longer law An electrons negative The Because attraction of electrons; another. in atom important atom. current positive, charges, an electrons. electrons to is light, higher state. valence gain give object unlike the the to an heat, "a to An . amount of become free This be oppositely (see nucleus tendency negative This . least the that or (5) atom) electrons. externally. move excited an the and orbit have like DIAGRAM within material charges, said have electrons. one objects unstable" electrons materials to is in be to said applied leave their of is the of center to valence example, applied want electrons from the electrons protons energy the energy for are energy by occupied when, energy electrical (farther level has or is atom an gain electrons friction, of ring each 16 The determines the (Q) is the ; than electrons. more electrons As than decreases found the the A distance basic exert polarity are the is object, static Because moving no the brought near is has another a is (4) be small the (B) 10-e between it balance bodies charged force is inversely and was is proportional proportional present in in When other, two the charged objects This of to (see to is has a field field field diagram or a from charge to opposite electrostatic electrons retained. ability electrostatic object field the of the its is charge electric Every transfer will around 3-B) a at is . If charged rest or work of . force, charge an present immediate charge x . each between them force (C) object. charged electricity it of (6) two them; charges; force This any concentrated there joining them" between force. a and the of 6.25 force the this investigating between force the increases, charges Upon characteristic surrounding it the rapidly. product protons protons. directed along the line to are charge positive more x there means coulomb negative One . 1018 6.25 of protons for symbol (C) coulombs charge a contains between "(A) that: in expressed One distance the them body a means coulomb is unit of number The charge. electric of magnitude the with compared electrons of number by an electric attraction or charge can repulsion. do the This ability to 17 do is work from different for unit the object before the breakdown) The Air . current ampere of Charge a of electrons. I = movement (I) Q/T The . is conductor or electrons for as during by current the one is the second current 10 x of in is the of would so much v/m. (A) = IT I = coulomb past (Halperin) is charge intensity current Q = charge T = time in is "One . of the in in flow ampere coulombs seconds . an Where: Q an (dielectric one that body only ampere time" . difference potential movement (I) charged 3 The because conductive about at current and become a on is charge (v) volt happen not become electrons unit from does one potential. charge a of could conductive of is the voltage This to defined differs (Q) accumulation of becomes current of forced in difference buildup insulator) is a or infinite. (an air subsequent point indefinite an air called any difference, potential in the is there When potential. charge's another, potential Theoretically, make the called 18 In a conductor, where field means cannot that electrostatic as is it is on protected Electrostatic information materials. on exist from field from "Electrons No charge unbroken. can is be exist a on is coming presented to "a (2) static Free . accumulate and basis for is This called flow will nullify the field. cannot Whatever objects shielding will charges or a to mass" conductive formed. be charged shielding a by ease potential Therefore, and would neutralize cannot and negative (5). within conductor a shielding. continuous lowest" is ease differences potential flow relative with move Why is this true? energy electrons move with This Electrons potential. electron electric electrons difference. potential positive free a the shield inside the near Faraday the Cage. later in the as long shield shield. More chapter on 3 CHAPTER - GENERATING STATIC ELECTRICITY TRIBOELECTRIFICATION Tribo is Greek for friction. of by friction, electricity The materials. influenced by (smoothness) characteristics lubricity ambient and humidity (RH) ) opposite charge electricity is surface If the of the cannot on an a the The is charge is neutralize insulator neutralized neutralize by on not all surfaces some it it of and mobile retains insulator because the will means insulators, remain other immobile than ionization, chapter. 19 the be are the One to the on (2) . until charge charge. until Static object the and equal accumulate charges grounding. will an "travels" the relative and material. only retains separation, of (T) each through surface contact, separated, charges way then becomes and and the conductive, insulative, is separation speed are materials the triboelectricity (temperature surface phenomenon; object, surface two two of pressure, , conditions develops material grounded. If When . intimacy factors: many of magnitude or amount, generation of and contact rubbing, the means Triboelectricity ground. Grounding not mobile insulator method discussed in used a is to later 20 is It tupe (positive polarity depends 3 -A) chart the chart) it is the If . and lower on other the that exist degree by many one air becomeing more Movements of charge charge: and as is material a their of in the the through The with materials (See series. the wool, glass is higher up steel rod with relationship wool, to farther of magnitude the on (since charge that the possible greater each apart charge Magnitude is influenced to a greater such is accepted contacting rubbing the factors two by a more negative rubbed are as intimacy of surface contact, etc. triboelectrically shoes the between them. be must is it Also, other you materials materials. (since it charge because the chart, characteristics, What happen rod glass a acquire If . other each rub would chart) chart. on to two any generated charge) positive more would are to were a the materials will you the wool on opposite negative or of separation without accumulate can charges static relationship acquire would rod their on and contact of Whether chart. series liquids, or solids, gases, any triboelectric a mentioning triboelectrif ication discuss to possible not you masses is At walk. becoming accumulation skin two any on rubbing separating from the carpet, negatively air your that more all times when positively surfaces your clothes, your and there charged can your clothing is movement, and one is charged. will great discharge enough. a lightning Fuel bolt when running through a the hose TABLE A TRIBOELECTRIC SERIES MATERIALS POLARITY (+ OR Asbestos Acquires Acetate -) a more positive charge Glass' Human Hair Nylon WooJ Fur Lead Silk Aluminum Paper Polyurethane Cotton Wood Steel Sealing Wax Hard Rubber Acetate Fiber i^ylar* Epoxy Glass Nickel, Copper, Silver 401 Epoxy Resist UV Resist Brass, Stainless Steel Synthetic Rubber Acrylic Polystyrene Foam Polyurethane Foam Saranf Polyester Polyethylene Polypropylene PVC (vinyl) KelF* TEFLON* Viton* Silicone Rubber * Acquires Trademark of E.I. du Pont de Nemours t Trademark of Dow Chemical U.S.A. t Trademark of 3M. 21 a more negative charge 22 fill to needed in this It is jet a charge a generate to easy very devices. Once develops. potential between or breaks down the object at insulative or is, the You have for a static had the doorknob, doorknob. is The body Let's is a the of and break this capacitor. by contact of a and (or shock across separation the in conductor a ground), field from another is there , (how resistance determines is, becomes the a an the slower material mobile it is electricity! across your down means static electric conductive) charge on a e. object material more walking This a dynamic scenario walking its discharge of Once the getting (i. The event. path less insulative experience that charged insulative more electricity but accumulated repeated ESD an sensitive charged a to easy difference the (dielectric breakdown) voltage or damage potential charged separating the medium the highly so is When different at as accumulated, potential objects. faster the discharge. longer charge is conductive) discharge; Your conductor discharge. of two has just is to magnitude charge static discharge the no the different a electrostatic rate A insulator an when enough disaster. avoiding it and charge, electrical an another has that thus grounded, a generate potential contacts is hose the situation Fortunately, charge. a accumulate also will and your a fingertips see what body carpet. between carpet, reaching from happens. will store Remember, your the feet the there and the 23 As carpet. if doorknob, insulative becomes which without between shock you being charge electrons to differ caused startling the shock in due lack conductive its and existence influence the this chapter does is a (i.e. it is (The fairly felt.) good There the of intimacy Late at of great to Ambient (wintertime) moisture job not was the dissipating any are also charge the listed contact, folic electricity. the smoothness, night, and wtthoul pefmiulon. Reuben wouM nwMfy and conduct experiment] In often enlef the other on enough of though not feel enough. the cause are conditions high of doorknob a did you event How many even and, down, ESD see. store potential example? The drier magnitude in difference not the the enough, and touched knob, difference above and/or and the to body moisture. feel doorknob the large reach doorknob breaks body did your from potential the responsible. of your large the largely to Simply, you you experience you carpet a across greatly from that spark the and and When body is your fingers conductive, walked passed in stored and/or is building. charge your shocked? anything because What charge momentarily have this walk, the air is the times a you more shocks humidity charge before factors first etc). is that page of INDUCTION Triboelectrification, a static a charged charge A that charged iron object it. and proximity to the same The Remember filings positive has object surrounding and effect be the a on field is uncharged similar experiments The poles. uncharged electrostatic the not you only way means can make to the one as only had to that induce (see diagram field between two DIAGRAM 24 of a a youth come fields 3-B) force surrounding . force charges of opposite polarity 3-B of can a using close themselves them orient electromagnetic object lines or performed magnet The object field Electrostatic lines The is touching it. even iron filings to an an electromagnetic magnet? negative contact, Charging by induction to close without an by charging generated. brought object on magnet. can charge or in along have 25 When an through moves lined (6) activity being object will flow the object object charged will a is together longer return even the failure and the object negative the are, thus them, the escalating its contact "stick" of charge field of an will a the net charges other, and together forces. present. will If the redistribute and charge. the electromagnetic if they will But electrons state. induction It If objects. excess positive unpolarized each the field. own -its ungrounded polarized, with alone, to electrostatic any type separated The may by repelled establish polarizes while Polarization collapse. materials uncharged between are charges field, materials polarity will object left If the two objects do will ground the leaving polarized opposite of induction charging touches object fields the and the closer like . Electrostatic the The other; the and induced in the is the field a or is to the repel, side one other. charges more attracting The forces the stronger charges on each object uncharged lineup the on up the Since like charges positive charges closer field. the stronger has The repel. field, a current attract will charges through moved electrical an conductor, Opposite conductor. will a is conductor uncharged are are the The completed. light appear once field that two held enough, there is materials no are reappear. electronic part can occur due to the flow of 26 current This induced happens often uncharged damage when microscopic crater Four to charges (6) 3. As long as The is they It charged of a induced and all around exist martials insulator passes speed the on or a induced and for having devices. by conductive!) use strength current of the of damage is not amount easily detected. fields electrostatic hold and will used the greatest and imperative that to charge a movement everywhere materials is induce conductor field, a for causing the made a near depends of grounded is to conductor sensitive packaging insulative They necessary through exists be not current notorious cannot in the vicinity a It accumulate. flexible of responsible are because they the the and products. Insulators field a in amount field is passes flow will end fields static invisible. are contact conductor to blows actually materials Physical Induction (Voltage induced component.) regarding fields 2. . an : charged 4 a remember Static 1. into spark a touches person (non-grounded) from arc induction. electromagnetic induced damage. current the when occurs during part charged a is This part. things that within on to whatever insulators (It the One ionization. is not be interesting industry method present are of charge allowed that the basically neutralizing 27 There the are numerous of scope information (2) other this to charge They are ways text. Charging by freezing 2. Spray charging through Thermionic 4 Photoelectric electrons Corona - listed electrification mechanical 3. 5. object which here are for beyond your own . 1. . an charging particles particles - - light increasing quanta temperature ejecting surface material - through predominate charging charging a sprayed atomizers emission from of ionized a polarity corona plasma and gas containing becoming charged with POLARIZATION is Polarization field electrostatic is charged it is the (6) device. will or happens when puts the destroy say the proximity of stationary. mobile they it will not If the until charge will up the give material field. insulator it an hold charge to cup is another The electrons can the (6) is to a insulator. cup near comes It gives Let's charged. stay positively styrofoam a greedy sensitive a 3-D) the as charged prefers cup it down (See part. the on by a the device in the is in This process finally resting sensitive the sensitive induction) But bench the current and a conductive . 28 field device created move as current not stop is in the by the close the may damage device for the first time. the freely through device does bench is cup triboelectrically charges passes cup be induced to flow. Let's as and electrons up even and an a when only hold the is object (styrofoam) diagram (See If air. time will and conductor electrostatic an it charged long easily worker giving by a when Remember, stationary. conductor, If the occurs . electrons the a polystyrene what both are surrounded long, a charge see is object Expanded up is grounded. ground As it charged, that phenomenon a to here. near Both are cup the and cup 29 Remember, other and is as are charges fast the is heat may be may completely damaged ground when a may are a by protons electrons attracting; out ground, to melt created more are like polarized. cause by The positive. with The moved touch weakened charge now and generated been have is up should to charges device picked it If discharge enough device Unlike The repelling. A very charged. positively should. they charged. discharge. The more instant the device becomes is cup device away from the cup is left the therefore behaving The of end the and attract opposites of the it will to electrons parts initial of field it the move so device. induction polarization then and is finally discharged. It can is easy be to create avoided information on will charges be at a discussed workbench. in the grounding. Polarization. How section these problems that includes 4 CHAPTER There are prime sources OF SOURCES -PRIME essentially two damage to of 1. Electrostatic 2. Waveform families Interference (EMI) Radio Interference (RFI) frequency Pulse ELECTROSTATIC discharge another ground electrical or conductor down the a determines failure. The 1 When . by highly rate three the Human charged 3. Field sensitive Device device that events Model electric object The from an another failure cause insulator field resistance resulting can when this an of is breaks charged the path thermal failure are models: (HBM) Model Model is . The charge. ESD Induced (6) its as potential or ground, that charged voltage" following Body Charged of to conductor charged a when different a path EVENTS (ESD) occurs at separating the 2. a (ESD) resistive different the represented or (EMP) DISCHARGE conductor so medium at object is are: Events Electromagnetic "Electrostatic the Events: Electromagnetic contacts (ESD) Discharge These devices. sensitive constitute that events of MECHANISMS AND MODELS DAMAGE: (CDM) (FIM) in the discharge 30 path it may be damaged 31 (thermally degraded) by one 1. thermal breakdown 2 metallization . 3. of melt dielectric breakdown three mechanisms (7) : MODEL BODY HUMAN We have is everyday is capacitance 1000-3000 120 device. a The rating of charge buildup during sensitivity can of Voltages magnitudes. For that. is It degrade melt (See easy fig. device for 4-D) of When a the through the can be to develop charged person body (a device to designed give satisfactory create touches is ground. into capability most . 32 in in the device some 1000 As you volts. than will power to surface. to these - the charge some Protection of and that enough but, of 4-C. transferred IC's limits protection a damage less diagram potentials craters capacitor) the see . on much There may be devices. 4-B) 50,000 - levels HBM 4-A) effect 15,000 to the of and This (3) sensitive the magnitude table significant exceed the table (see HBM silicon protection all a circuit have in have are generally will the easily sensitive in transfer to individual an volumes stored or equivalent destroy or small energy this the can devices that mind devices show (see activities certain resistance exceed may charge a equivalent equivalent and tables following develop body's human values equivalent conditions ambient see, Keep in select (pf) picofarads These human to a The movements. 250 - ohms. is for how easy it seen already common with HBM - 3000 operations of to the the resist designs volts. but not TYPICAL ELECTROSTATIC VOLTAGES (VOLTS) RELATIVE HUMIDITY EVENT 10% 40% 55% 35,000 15,000 7,500 12,000 5,000 3,000 6,000 800 400 2,000 700 400 trays 11,500 4,000 2,000 Remove DIPs from Styrofoam 14,500 5,000 3,500 Remove bubble 26,000 20,000 7,000 21,000 11,000 5,500 Walking across carpet Walking across vinyl Motions of bench floor worker Remove DIPs from plastic Remove DIPs from vinyl pack tubes from PWBs Pack PWBs in foam-lined box CHART 33 4-A DEVICE SENSITIVITY TO HUMAN-BODY MODEL RANGE OF ESD SENSITIVITY DEVICE TYPE (VOLTS) VMOS 30 1,800 - MOSFET 100- 200 GaAsFET 100- 300 EPROM 100 - 2,500 JFET 140 - 7,000 OP AMP 190 - CMOS 250-3,000 Schottky Diodes, TTL 300 - 2,500 Film Resistors 300 - 3,000 2,500 (Thick, Thin) BIPOLAR Transistors 380 - 7,000 ECL (PC Board 500 - 1,500 Level) SCR 680 Schottky TTL 1,000 CHART 4-B 34 - - 1,000 2,500 Grounded Surface Body Body Capacitance Resistance -if Contact Device Resistance 1 j AAAr H4-W AM Current Pulse Equivalent Circuit of Human-Body Model DIAGRAM 4-C OWOi. 0i0 0' ?<}!'. 0"Sin Jl DamaRr at the input human-body of a disrhnrxe of CMOS circuit From |5|. DIAGRAM 4-D 35 due to approximately 2 kV. a Capacitance of Device Device tt nnnr4Jv\V *-AM Current Pulse Equivalent Circuit of Charged-Devjce Model DIAGRAM 36 4-E 37 The HBM figure lead is a that HBM an The device discharge to a floating device. MODELS CDM charged device and then flow components the Devices can during between at contact some a time ground device Acquired across A operations. assembly charge on the charge is on and first failure charges from (3) the work charged are in device The model end ways : into associated with a the movement insertion charging eventually pins For . and/or will and represents package. 4-E) , Charges dielectrics, tubes shipping paths) pin. one several surface, discharge. and are most during contact likely significant a to number . may be metal a the diagram (see charge unloading and charging conductive This path. ground. damaging device junctions damage CDM or other through ground devices the triboectrically sliding (and to more much the around up in the discharge are shipping, equipment, to can and representations circuit of that association ground die the set is ground lead frame the discharged quickly through is model on triboelectrically - to through path connected not or a DEVICE CHARGED floating another while the discharge through discharge HBM An leads other all with lead single a Typically, to ground. connected lead discharge to that shows mobile lead or from nonconductive immobile. and to A mobile conductors. portions of the charge An is the immobile device. The 38 immobile but device, the and charge and device a ground a field. may charge touches, device to discharge. be kept low a at or damage resulting time the and whether the devices contact, of (Mobile) by upon The first the cause will pin, a from unloaded dispensing. damage, charges must different from mobile level. from HBM. resulting from CDM The floating devices and, will though charge, be are device the of capacitance threshold for damage will are by maintaining usually end an ESD minimize are grounding determines the energy the the Devices damage directly cannot device the damage usually failure thresholds Damage at To and currents indirectly can creating shipping tubes develop cannot charge released exceeded. they may the having ultimately during ESD In HBM the damaged be not package on ability to discharge. "The capacitance plays ESD a strong and Charging a the and Although the as is the for threshold well while ground will inversely it will is be near more ground. storage the energy damage instant the to be will near effect energy The of released positioned damaging proportional energy at have the increasing as discharged device package determining device discharge were energy in it away from The device device the the packaged potential device. role whether then moving the of than of capacity is during it the exceeded. and ground increasing stored the on would increase in the grounding be if potential capacitance ratio. limited in the CDM, 39 when that the potential strength" through of the device mobile can across occur an Second, a field A charges. grounded of experience a having potential gradients (For a a more would (9) fast so . small also representation of an through current can into a of the in The "oxide punch event may or the which FIM Model "If for a a it field, lead" (6) cannot diagram of gate device is will . sustain electrostatic see the with separation develop grounded high dielectrics associated field. the first break would electrostatic a common. affecting the geometries fail very strength First, ways. be below the potential inserted very common two not by induction, non-zero of "Devices is field before in the influence surge threshold" in device which oxide charging device a while is damage Increased field . device. structure (2). can reducing the in a affect air, the the exceeds occur can pulse FIM - (2) discharge the HBM, breakdown dielectric down MODEL field external induced the density power INDUCED FIELD An to compared field" 4-E.) EU OEJCmC UEAKDOWi ELECTROSTATIC rrm ELECTROITATK RELO (E- V/M) 'EM , jt Equivalent Circuit of Field-Induced Model DIAGRAM MECHANISMS FAILURE "Failures hard" (2) setting direct no that A . an up ESD failure soft equipment (e. is failures failure 1. or electric discharge require can field, magnetic through a small and signal equipment in changes CMOS). Soft from result temporary distortion as g. to an ESD pulse can be exposure hardware damage affected Hard by caused characterized is 4-F to can switch usually failures loss. resume. states occur or pulse, information operation failures Soft as well discharge spark ESD and path. or energy a as soft only a are There Devices are most when the operating. can mechanisms Thermal at occur (for any time and semiconductors) Breakdown semiconductors, or Avalanche bipolar are (2) by three : Degradation integrated 40 represented circuits - indiscrete 41 2. Breakdown Dielectric discrete - integrated MOS MOS, circuits bipolar THERMAL BREAKDOWN Thermal breakdown enough "Hot gradients. DIELECTRIC BREAKDOWN Dielectric breakdown applied across its puncture latent MELT Metallization melt short caused first Though to with melt the the event of portion of the a with large temperature junction other a on scope of a due shorts to this a which is greater characteristics. magnitude the of failure mechanisms event. mechanism. may junction A damage may be Subsequent The difference potential structure the failure as a secondary metallization. melt of results. usually by is breakdown or depending metallization beyond ESD an melt heat there region dielectric is of creating when strength catastrophic METALLIZATION current actually by 4-E) dielectric a through the circuit result occurs dielectric or to duration spots" caused circuit short a diagram (see melting. is is little diffusion There both integrated circuits, all - MOS and and magnitude junction. than Melt Metallization 3. or draw A enough oxide fails result. handbook, a list of other failure 42 includes mechanisms (7) to Metallization : over arc metallization breakdown Surface breakdown Bulk Surface inversion Surface EVENTS WAVEFORM EMP AND RFI, EMI, interference Electromagnetic (RFI, sensitive device example holding The a as certain This magnitude glass of failure causes the (EMP) , but interference Frequency differ from that cannot waveforms FIM) ESD an pass frequency actually will mechanism There which the goblet and for these device the is one the to soprano a in event through couple too with great beyond shatter. crystal the the a singing a with of sound. stiffness certain Stress and goblet. frequency the as vibrate vibration then a vibrating same becomes prevent stress starts is note be would coupling vibration will sensitive failure. note the of material the material a frequency of frequency goblet. In (such are Radio , device. the An They way. (EMI) Pulse Electromagnetic and important one EVENTS As the of the point, cracking the and is the waveforms. result instance of when stress cracking these models can is mechanical cause thermal 43 failure. the If The heat may lead to degradation. failure is heated in destroyed "Sound pulses. passed sound through the right, to water is failure is way thermal ESD waveform . by up of speaker picked microphone another can begins and can microwave) frequency into talk picked the at up damaged be (6) coupling coupling occurring is to be can components called process speaker are Throughout the rail the the those and magnitude to microphone or to by an . by or A auditorium an microphone ear results. picked The waves speaker speaker wave on a (radar, frequency of screech If waves. the an and , (microlightning) components example piercing microwave) like (much through frequencies radio as a origin electrical and way failure thermal COUPLING FREQUENCY common in cup in pinpoint Certain a the all or global thermal the heat, cause difference between this is that ESD thermal failure and to enough great are vibrations set the easily microphone the by up and the the in placed frequency cycle converted of pulses keeps a back the sound electric amplifier, position and is to the by converted microphone, electrical entire and assembly, is are is boosted pulses assembly of complex a to where distance waves generated through areas the from just are by the repeating." distribution system, transportation pass sound where damaging by truck frequencies 44 and As and airports, a transmitters Microwave exist. passes vehicle frequency "Actual result. systems just are failures been traced to through of on naval to aircraft" unit From of an zero adjacent to peak damaged if the peak to zero ship (rise resulting (decay time) destroyed if waveforms will the not decay pass or time) voltage is too devices time is that too sensitive much are for time rapidly. is interference shielding (EMI) and can guidance aircraft the search devices the have radar can can Fortunately, voltage as such and be the aluminum reduce effectiveness be From device. sensitive power long. peak and . through barrier materials Barrier materials should limit electromagnetic by landscape. components military caused (6) voltage foil. This in and stations distance fire-control computer vessels the if sensitive coupling damage frequency dot and, waveforms damage right, cases the tv supporting installations radar military units radar to and electromagnetic pulse decay both (EMP) . CHAPTER The 5 "envelope" variables and that grounding to part practice discharge program implementing ESDCP, steps "envelope". any effort at successful, to Before (ESDCP) ESDCP, an and ESD control must are Two 1 . reasons common failed reasons that static is generated. A can be put electrostatic an incomplete justifying an Without these and marginally and not ESDCP Too put to phenomenon much defining at to contribute understanding the the of ESDCP- attempts of symptoms 2. for lack A handling service completed: an handling safe "envelope" an be be will to best. many practice. personnel field auditing JUSTIFYING AN There from materials proper the all discharge three major phases successfully, control to analysis for electrostatic Everything packaging stations, the of devices. sensitive failure control PROGRAM buzzword industry's electronic implemented to to work procedures, into the are damage the become is CONTROL DISCHARGE ELECTROSTATIC ESDCP: - effort the an this is problem failure ESD of into ESDCP aimed are: and how at the by isolating causes. lack of failure. diagnose, conclusive ESD and is there evidence not is that visible, a lack 45 of ESD can was be expertise the cause difficult in knowing of to 46 how initiate to three phases translated a figure into to made a money to to provide thorough loses The its quality on of approach management decision of In and to the problem is make problem If the and cost the looked at a put level dollar need for have will effort is to not quality impact for for need be the with management money. on to large must corporate a possible words, a from ESD is being or management information developed was static the on which the requirements profitable static controls static Stephen Halperin control of "provides complex a the (7) to needs ESD. An means organization, programs" tracks it of ESDCP to and information Stephen to approach straightforward for quantitative control analysis a by information the regarding analysis is It with managerial Throughput other resulting be can all of supportive management level, it effort impress and Associates. throughput impact provide impact. & providing and complete the facility a money analysis following Halperin level, save damage Whether ESDCP. an the of dollars. losses the Convincing top All information, implementing spend ESDCP. department time, with an in itself. challenge from of be must management top progress effective to process evidence. conclusive For investigative an make a is based evaluate the satisfy the which lead to . quantity and flow of goods in 47 When production. indicate (9) can : 1. Which components 2. Where in the 3. Estimate 4. Highlight the important, total throughput analysis the over losses attention, short-term foundation the provides occurring are immediate with return static static potential of that, greatest to losses the of most cost areas the failing due may be operation the yield will "Most analysis throughput conducted, accurately for program" the development (Halperin) The an ESDCP has three phases devices Identification of between purchased volume ESDS (9) and : and of device utilization 3. Definition of burden costs following analysis will in this handbook is be part a broad used associated of a difference the volume Definition process control static organization's 2. provided STEP the . Justifying 1. of class ESDS with exercise. devices What is of the justification components and determine overview . ONE: Identify between discrepancy production (9) Obtain contrast static the sensitive volume purchased and actual use the in . the original that to plan actual for finished production goods figures. volume If and actual 48 figures production volume. The reasons problems and might determine less, are be may potential for reason the static lower related include: rework parts restricted available in-process excessive redesign field problems Determine An ESDCP the will sensitivity of be by its required ESD sensitivity governed protection the level. information most There (9) chart sensitive are three 5-A) device sources . and for : Actual sensitivity testing Vendor test Generic (see the devices. of devices information device sensitivity Analysis Reliability listing reference Center, Rome, (IE. NY., RAC - see appendix) (see STEP 5-B, TWO: table and volume unit Document 1 . The to 2 . The and cost the device utilization, including location, requisitioning departments, (9) . following information: actual support unit . ESDS Define inventory levels I) number the cost of annual of each each ESDS item production item purchased period average purchase 49 3. The 4. Location 5. The (see STEP table Define (9) rework by to and the cost the requisitioning departments who - . burden replace power, with associated costs the calculated. the and deviant (see so the cost devices ESDS and burden the cost chart to sum of III) each . up in calculate is funds of to all of labor facility, the of determined cost, actual easiest applied is the cost value The on. units 5-D, account present burden total into item, an average estimated and of II) inventory of storage factor takes estimated cost inventory . burden lights, level devices 5-C, required inventory identity ESDS assemblies the of uses THREE: The average tied items. Once and then the material item can be the multiplied dollar 50 There are deviations do exist and The ABC Analysis Once of all the the Potential with of ESDCP has static the control The point is the that ESD Loss have been largest Also, the losses of deviations. include ESDS devices. calculations value an - inventory identified. for reasons many has completed the static potential can be identified been established been successfully completed smallest by and (9). portion losses can department. the first See tables be The phase 4-7. Table 1 5-A DEVICE UTILIZATION DATA FOR ESD-SENSITIVE DEVICES USED IN PRODUCTION Item ESDS' * (V) 1 60 500 2.000 5.000 2,500 200 1,100 1,500 4,200 6.000 2 3 4 S 6 7 8 9 10 ESDS: Items/ Data F/C Source test vendor RAC 10 vendor RAC test test RAC RAC , ESD-sensitivity Table 2 INITIAL REVIEW OF ITEM NEEDS, INVENTORY, PURCHASES ESDS Units Units Item ESDS* Items/ Reqd/ Purch/ Unit * (V) F/C Year Year Cost Invent Each 2 4,700 10 2,000 4,000 6,000 10,000 1 1,000 2 6 2 2 2,000 4,000 6,000 2,000 2.000 J 10.60 $3.80 $2.25 $0.70 $1.10 $0.90 $1.40 $0.80 $0.40 $1.80 200 400 600 1,000 100 200 400 600 200 200 39 39,000 1 2 3 4 S 6 7 8 ,2 10 | 60 500 2,000 5,000 2,500 200 1,100 1,500 4,200 6,000 4 6 4 Totals: 'ESDS: Avg 7,200 8,000 12,000 1,400 4,600 6,300 8,800 2,600 2,300 57,900 3,900 AND USAGE Deviations Units Cost x Each Units Units Units Units Req by Mfg Req by Req by Rework Fid Svc 2,040 2,010 700 210 1,680 1,330 1,540 280 70 500 560 280 200 60 480 380 440 80 20 40,500 10,500 3,000 -2,500 ($26,500) 2,250 1,750 -2,800 ($10,640) ($3,150) ($700) ($330) $2,160) ($2,660) ($1,760) ($160) ($180) 4,280 1,960 6,140 10,100 1,030 980 -1,400 -1,000 -300 -2,400 -1,900 -2,200 -400 -100 -15.000 ($48,240) 2,240 ' 4,190 6,220 ESD-sensitivity Table 3 DEVICE DEVIATION WITH BURDEN-LOSS ESTIMATE Deviation ESDS* Item * T 2 3 4 5 6 7 8 9 10 '. . (V) 60 -2,500 500 2,000 5,000 2,500 200 1,100 1,500 4,200 6,000 -2,800 Totals: ESDS: Units Each -1,400 -1,000 -300 -2,400 -1,900 Cost x Units ($26,500) ($10,640) ($3,150) ($700) ($330) ($2,160) ($2,660) -2,200 ($1,760) -400 ($160) ($180) -100 -15,000 ($48,240) ESD-sensitivity 51 Estimated Lost Burden @$ 14.S0 Material & Each Burden ($36,250) ($40,600) ($20,300) ($14,S00) ($4,350) ($34,800) . ($62,750) ($51,240) ($23,450) ($15,200) ($4,680) ($36,960) ($30,210) ($27,550) ($31,900) ($5,800) ($1,450) ($33,660) ($5,960) ($217,500) ($265,740) ($1,630) Table 6 1 PURCHASING ANALYSIS Item 1 2 3 4 5 6 7 8 9 10 Totals: 'Includes 1 Units Cost Avg Cost Unit Cost Reqd/ to of Purch/ Year Purch Invent Each Invent Year $10.60 $3.80 $2.25 $0.70 $1.10 $0.90 $1.40 $0.80 $0.40 $1.80 2,000 4,000 6,000 10,000 1,000 2,000 4,000 6,000 2,000 $21,200 $15,200 $13,500 $7,000 2,000 $5,600 $4,800 $800 $3,600 200 400 600 1,000 100 200 400 600 200 200 $2,120 $1,520 S1.350 $700 $110 $180 $560 S480 $80 S360 7,200 8,000 12.000 1.400 4,600 6,300 8,800 2,600 2,300 39,000 $74,600 3.900 S/,460 57,900 $1,100 $1,800 Dercent of estimated units lost and percent ol total Units 4,700 dollars lost 52 Value Unit Purch Deviations Units Cost x Each Units of $49,820 $27,360 $18,000 $8,400 $1,540 $4,140 $130,300 by item (S26,500) ($10,640) ($3,150) ($700) ($330) ($2,160) ($2,660) -20.3% -1.4% -100 ($1,760) ($160) ($180) 1 5,000 ($48,240) -37.0% -2.500 -2,800 -1,400 -1,000 -300 -2,400 $8,820 $7,040 $1,040 $4,140 -1,900 -2,200 -400 - Est % loss of Total ESDS Purch -8.2% -2.4% -0.5% -0.3% -1.7% -2.0% -0.1% -0.1% Table 4 DATA SORT BY DEVIATION COST Deviations ESDS* Item (V) Cost x Units Units Each ($26,500) ($36,250) ($62,750) 16.7% 54.9% Class A ($10,640) ($3,150) 18.7% ($2,660) 9.3% 12.7% 22.1% 6.5% 5.5% Class B ($23,450) -1,900 ($40,600) ($20,300) ($27,550) ($51,240) -1,400 ($2,160) ($1,760) ($700) ($330) ($180) ($160) ($34,800) ($31,900) ($14,500) ($4,350) ($1,450) ($5,800) 60 -2.500 500 -2,800 2.000 1,100 6 8 200 -2,400 1,500 -2,200 4 5,000 -1,000 5 2,500 -300 10 6.000 -100 4,200 9 Totals: ABC % Material Loss Est, lost Burden Analysis Material + Cost Units Segment Burden Each @$14.50 -400 -15,000 ($30,210 ($36,960) ($33,660) ($15,200) ($4,680) ($1,630) ($5,960) ($48,240) ($217,500) ($265,740) 16.0% 14.7% 6.7% 2.0% 0.7% 2.7% 4.5% 3.6% 1.5% 0.7% 0.4% 0.3% (31.4% of loss) Class C (11.0% of loss) 100.0% 100.0% ESD-sensitivity ESDS: Table 5 ' - DATA SORT BY DEVIATION COST Item ESDS* (V) Deviations Cost x Units Units Each ($26,500) ($36,250) ($62,750) 16.7% 54.9% Class A ($51,240) 18.7% 22.1% ($23,450) 9.3% ($30,210 12.7% 6.5% 5.5% Class B (31.4% -1.900 ($10,640) ($3,150) ($2,660) ($40,600) ($20,300) ($27,550) 200 -2,400 ($2,160) -2.200 ($1,760) ($700) ($34,800) ($31,900) ($14,500) ($4,350) ($1,450) ($36,960) 1.500 ($33,660) ($15,200) ($4,680) ($1,630) 16.0% 14.7% 6.7% 2.0% 3.6% 1.5% 0.7% ($5,800) ($5,960) 0.7% 2.7% 0.4% 0.3% 1 60 -2.500 2 3 7 500 2,000 1.100 -2.800 6 8 5.000 2.500 6,000 4.200 -1,000 4 5 10 9 Totals: ESDS: Est. Lost Burden % Material loss ABC Material + Analysis Units Cost Burden Segment @$ 14.50 Each -1,400 -300 -100 -400 -15.000 ($330) ($180) ($160) ($48,240) ($217.5001 ($265,740) ESD-sensitivity 53 of loss) 4.5% 100.0% 100.0% Class C (11.0% of loss) Table 7 INTERIM THROUGHOUT ANALYSIS REPORT ESTIMATED ESD-LOSS SUMMARY Estimated ESD-sensitive material losses: Estimated ESD-sensitive-related burden loss: $48,240 $217,500 Eslimated Total ESD Impact: $265,740 ESD Loss Distribution Based on ESDS Unit Deviation by Class Est Burden Costs Est Material Costs Class A Class B Class C Totals: Est Total Costs $26,500 $16,450 $5,290 $36,250 $88,450 $92,800 $62,750 $104,900 $98,090 $48,240 $217,500 $265,740 ESD-Sensitive Device Purchasing Data Required Purchases Units (ea): Cost ($): 39,000 $74,600 Actual Purchases Avg Invent 3,900 $7,400 57,900 $130,300 Notes: 1) Burden calculated as $14.50 per unit. 2) Areas requesting ESD-sensitive devices Deviation -15,000 ($48,300) and assemblies are: Est % of Deviation Use Area 10.0% 70.0% 20.0% Manufacturing Rework Area Field Service 54 % Deviation -25.9% -37.1% TUTORIAL ESTIMATING ESD HOW LOSSES LANGUAGE AN EXERCISE last the following "How THE COMPLEX OR CONVINCE MANAGEMENT THAT THERE TO IN In IN do few years THEY IS AN ESD-RELATED PROBLEM UNDERSTAND FOR PACKAGING packaging ENVIRONMENT PROFESSIONALS engineers had have face the affecting the to question: know I that static related are problems operation?" And "How do I define the impact of damage to the satisfaction of management?" The _ following available dollars so in a tutorial that you format will can that allow you to effectively management will information the organize communicate damage the in understand. You have identified the following items as possible victims of ESD. These items are part of the devices and subassemblies that are manufactured at Organize information Item 1 Voltage - req'd per 2 3 req'd - per inventory Item 4 req'd - Item 5 req'd - instructed in 1 used unit I-V. 2000 F/G, $.90, cost 100. year, Voltage sensitivity 12,500 V (RAC), 8800 purchased per year, unit year, 600. sensitivity 1200 V (test 6300 units purchased per inventory 4 00. year, 10 55 used cost info), year, Voltage sensitivity 3800 V (vendor info), 4600 units purchased per year, year, inventory 200. per average using tables class sensitivity 100 V (vendor info) , 2300 units purchased per year, Voltage per average as sensitivity 1000 V (test info), 3 used F/G, 2000 2600 units purchased per year, unit cost $.50, inventory 200. per average Item facility. Voltage - req'd year, inventory average Item the you 4 $.90, used unit 2 6000 average F/G, cost used unit F/G, F/G, cost 4000 $1.50, $1 2000 00, 56 Item 6 per 1400 year, per 12,000 units 1000. year, 8 - average Item 9 req'd used cost 1000 F/G, $1.30, req'd average (RAC), per purchased year, 1 F/G, used unit cost 10,000 $1.20, req'd average sensitivity 2000 V (test info), 6 used F/G, 6000 cost unit $2.50, 8000 units purchased per year, year, 600. inventory Voltage sensitivity 1200 V (vendor info), 7200 units purchased per year, inventory 400. per year, 2 used unit 4000 F/G, $3.90, cost sensitivity 40 V (vendor info), 2 used F/G, 2000 4700 units purchased per year, unit cost $12.50, inventory 200. 10 req'd Voltage - per average year, Assignment #1 to table 1. Assignment Determine ESDS devices - #2 Perform - purchases and Determine deviation required each usage year initial according for plus each the used of review to item. production item needs, according inventory, II. table average in This is equal to the units inventory minus units purchased year. Determine units 8 unit Voltage - average each (RAC), year, per req'd Item per purchased sensitivity 5000 V Voltage - inventory Item units 100. inventory Item 7 sensitivity 10,500 V Voltage - deviation multiplied denote dollars This cost. the unit by is cost to equal Place . the number amounts in of deviated parenthesis to lost. ** * Assignment #3 table - Determine deviation Determine per Determine estimated units los3 estimated deviation x with burden loss estimate using III. each column to burden by $18.50 by the burden adding deviation cost multiplying unit. lost material estimated loss and burden column. * * * Assignment #4 - Using table IV sort data by unit deviation material 57 from cost largest % loss Determine the item is the of Determine item is the % material loss total amount. smallest total the of to material deviation Determine the ABC analysis by finding units estimated $ by finding x cost each what percentage each units. Generally, segments. percentage what $18.50. @ burden lost the (class top 10% 80% of total ESDS dollar listed account for 50 40% of losses the next 30% (class B) account for approximately 20 total losses, and the remaining 60% (class C) account for less than A) of items the - - 10 - 20% of 5 Assignment item is % % Determine each item expense burden the ABC units estimated and total table IV and V to (from most decreasing by finding lost burden material analysis by sensitivity. estimated percentage what each $18.50. @ $ by finding lost material percentage what and burden. Top 10% represents ;lass "B", and the remaining 60% segments. 30% represents class "C". class see how dramatic the impact of burden . have identified contributing the largest You device next represents Compare of the the material V Table sensitive) total loss is Determine "A", loss the of Rearrange - least sensitive to Determine losses. the now the smallest segment of portions potential of the static inventory losses. CLASSIFICATION OF DEVICE SENSITIVITY (DOD-STD-1686A) CLASS CLASS CLASS II III > 0 I > > 1000 TO 4000 <1000 V V TO <4000 TO < 0< 100 58 V V 15,000 V (PROPOSED ADDITION) CLASS V Device UT1LIZATI6N txvta Et>t>*> 1 ITEM NO nx&ue I |U ?E>TXXTfOO "D&VlCf'i O^El) Z 3 E5KCL*S6 ftSftS VCT2> 59 4 x CD V s U) *1S tf vfi a a U) 5 3 < - 3 3 o T I o I 3- to 8f 3 if F o t2 60 UTIUZ^-TIOU DEVICE T^VlATlOil 1 1 D"V ITPM WCTV4 WO. T*THE "DATA 3>O^T>P-> LOSS. &STHrVTC 4- 3 pe^.coer-r OlCT> / 1A.50 ^ TorAiZ 61 U s a it L 1^ r- I- X <n u J t t CI i i J* a & * 3 d $ o | > to /n P to j o >- N to >'2 to2 PD to >0 IS o LI 62 CJ Ms S 5 ^ sit Hi I v to o i ID S d o 2 4 vf I MI s - o- 0 6 o V3 IS o 3: 63 Whether is to function device is There resides. ESDCP. At the Identification an ESDCP program ESDCP the sensitive be should facility in in main which comprehensive a include: should devices sensitive of to components several least, very Protection be can tailored and effective, discharge An jeopardy. in (ESDCP) Program's electrostatic an placed never cost that sure Control ESD the complex, make (ESDS) functional, it or simple ESDCP AN ESTABLISHING devices of Grounding Ionization OF IDENTIFICATION A ESDCP successful will damage foundation determine static for how 1. The . the in Actual devices is one of DOD-HDBK-263, though the a of or best knowing its will (2) device other method, device becomes level have to be. process are how may volts sensitivity straightforward ways devices which (i.e. sensitive sensitive most program three testing are because ESDCP stringent sensitive accomplished the without degree they device) a exist cannot to what and sensitive DEVICES SENSITIVE the will Identifying which can : sensitivity standard by DOD-STD-1686, tests it may be (see costly appendix) and time consuming 2. Available is the test easiest, data but on may similar require 64 be devices - this substantiation method - 65 3. devices Generic i.e. - reference in Center Analysis Reliability the listing sensitivity (see NY Rome, appendix) DEVICES PROTECTION OF Sensitive devices and manufacturing the at beginning While the be must testing, from - to time the more written and presented can understand the causes everyone the so the task ESD of and the procedures. The guidelines countermeasures to employee hand. of static this insure the devices' any as not below) safe must of the be must assembly made as be the aware of role of Protection also includes from the there are materials generating is be well idea. sensitive level should control, program. ionization (see at Employees of control Sometimes areas. sensitive personnel more methods restriction an still The an begins program devices. that at involved in the absolute continue stringent is device is being established, adequately trained to handle ESDS device, the through receiving, ideal The shipping. the process assembly from protected possible, that but can be taken to handling. GROUNDING Grounding is necessary area and as close to zero handling devices, humans are the most as to keep the possible. grounding common of source potential of the Besides grounding personnel of static work work station stations is imperative because generation. 66 Personnel the stringent common that form are damage a the live to prime sensitive and device. Ankle by neutralize the operators field a giving can effect. any charge itself before it leg straps, If available. by heel straps, is operator how most human A devices. or sources static strap for wrist on The program. control discharge depending program can and standing, take place through conductive footwear and floormats. is people currents It (one protect is and can take place through . resistors to grounding sitting, (2) stools circuit. verify the grounding is the direct also limiting grounding in are to dissipate a operator conductive Current are can grounding to very involved a proximity by place damage bootstraps If close eliminates generated any personnel device a Grounding do procedures of in be can grounding also to megohm them from important insure resistor) shock to of the the be used when they contact system often should check compliance must grounding a to system. 5no f E ilttnfi ti-rioi AMiqntni Clin AulomifC Invito" S~ Wv* StorM Storao* IncOTHrtfl Floo< Mai Floe Mat Floor Mai Tib* Mti Wrifl Sl'ap Strac SNx Sl'M latiK Mat So* Si'W Bag, Tote 601 Toie 601 Sw Si'to Bam Tubn fiint loniff. lonut* Wnti Ini SoM*n Killing S*e Pnnifrf C'rcuM Anemo'v Wrifl Si rap Cotductrv* Foj Turwt ConduCIn* Foam WlV r*ntJ Firul Packaging t Imoeciion Snieoma Grojrt SokJ*f9 Floor Mai Floor M1 Tabk Mat Floor Mai Floo. Mai S>o< Sl'to Bam Tote Boa Tabk Mai Tabic Mai Wim Sitae S><o< Si'ao Wiut <H"Xt Slrao lonilrr Bag Bagi So Slrao Boi Racki Suae Shoe Sirae Toie Boa Toie Bob lonifcf lomir* lontfvf ConrJuCliv* F B"n Rack! Bm Typical Rackt static problem areas and their solutions. 67 68 devices, Handling static charge. should be help zero be kept since for sensitive parts are as a of installed work station levels "Voltage to 30% of devices many removed (2) . from That would operators. incoming is to levels the to anti-static in zap is Work their as should protective can equipment PC near the most rework failure and repeating can used shipping areas lab damage whenever and sites: analysis should and inspection packaging area threshold 25%) be of damage assembly kitting (auto/manual) potential that packaging include the following inspection soldering below voltage (as low stations charge cumulative, final wave a conveyors, This ESD-protected an single voltage keep storage insertion of belts which build-up. least at damage ESD below threshold parts" as such moving parts, charge build-up and be should clothing generation with of and well. voltage 25 application equipment with the possibility part. to the prevent and grounded reducing sensitive be grounded function The Any eliminate should to enough conductive tablemats, tabletops, ESD- ESDS handled by IONIZATION is Ionization holds a the and charge neutralizing the styles environment a neutralize can be cannot By forming both grounding. (2) operation Ionization grounded. used in Ionizers and can ions there are an three in with ionizer different in come that aid also conjunction positive and negative guns) nozzles, be should and material a neutralizing insulator. charged (blowers, to solution only methods of : 1. Induction 2. Radioactive 3. High voltage INDUCTION by induction Ionization When placed material is near as well These polarities. charged induce to tries conductive a starts as with material, charge a grounded on grounded, polarities the the it ionizes neutralize field electrical tinsel. the Since the tinsel. cored metal charged tinsel the air the of with both material. RADIOACTIVE Ionization Thus Some this with radioactive method radioactive polarities material and until of isotopes ionization materials these particles it is can used occur without in explosive emit charged knock loose is balanced. 69 electricity. environments. particles electron from of a both charged 70 The Commission to isotope is radioactive by license. the guarantee The of control is leased equipment the Nuclear S. the U. by provided replaced and hazardous potentially Regulatory yearly material. HIGH VOLTAGE High ionization voltage static comb premise (a under charge static is free having surface the comb, making it OF RULES As needle conductive On of of radius that approaches sphere it concentrate the or density case ionizes a charge a the curvature for conductor, sphere, Charge allowing a on a The . conductive make will point. and a radius charge least the sharp flow. the the of self-repulsion to is functions points) needle of series a with this which evenly distributes. a bar metal to signal wave square a with starts zero, on the of the the air, dissipation. charge THUMB * Keep * Control relative reduces peak all * Work * Ground static sources away humidity from which protected may not areas eliminate but. voltage surfaces should personnel not in triboelectrically contact or in close charge proximity ESDS * Bond/ground * Keep floor * Personnel * Tools/test any machinery that surfaces should from wear equipment generates static triboelectrically charging anti-static should be clothing grounded to AUDITING AN ESDCP An between cooperation facility. used or ESDCP effective to Once policy has been methods monitoring Individuals involved within an are with the functions and implemented, are complying audit organization with committee such an as (7) audit within should policy. the by provided and coordination, communication, departments the all that personnel assure department requires should a be Auditing DOD-STD-1686. represent each : Procurement Design Engineering Reliability engineering Quality assurance Manufacturing Test/field engineering Packaging ESD operating functions in a procedures facility. can These apply many activities Buying Design Inspection Assembly Rework/repair Packaging Storage Transportation Failure to Analysis 71 can if not all include (7) of : the 72 An ESDCP audit be should coverage include should benches. DOD-STD-1686 following (7) use Program protected requires program and monitoring can grounded and areas should certification include work the : ESD of Personnel Ionizing The ESD of the of aspect every periodically. made certification The cover protective grounding systems control or materials systems grounding of static of prime for machinery below the level of sensitivity of ESDS devices The absence Grounding ESD of tools protective Resistant ESDCP Design audit reviews and of may power personnel to measurement Effectiveness An static ESD safe a require sources equipment apparel assure protection areas/protective formal design (during design/development of equipment and phase) personnel program must review. include, for example : Identification of ESD documentation Program for marking review of ESDS (designed to items ESDS production example : Precautionary and procedures items transition) must include, 73 ESD awareness Packaging Problem and areas training labeling and of proposed ESDS items corrective actions STATIC CONTROL LAB Ml-CKO "...And this is our zeAo- 74 CHIP CORP. potential product assembly area. CHAPTER There 6 is ultimate factors chain to contribute device. and areas two practices and the Though grounding, The alone. achievement Packaging of handling and the primary for every and ESD and delivery and is achieved elimination of static are prevent ESD really damage ESD. are of by a safe those generators possible. not also many by provided be potential protective device to a cannot key factors involved in controlling ionization, of assembly, protection protection total an manufacture safe zero to in device that of inception from the events of utilization reliable work long a MATERIAL PROTECTIVE ESD - two of the Grounding techniques, materials work together to provide contingency. Selecting packaging requirements that Mechanical tear, - - must Transparency, meet consideration such puncture (10) resistance, the many : abrasion, tensile strength, attenuation, rate, as of triboelectrif ication, resistivity Corrosion, chemical, Performance package Decay surface Chemical the seal Electrical- involves the material outgassing, contact) , requirements compatibility with contaminates biological reactive Durability, - the product, resistance 75 shelf (ionic, agents life, cleanability, slough 76 The focus devices ESDS Remember, fields electrical are safe materials from electrical of The following the and other requirements. electrical on in two of one triboelectrif ication two basic type: fields, triboelectrif ication damaged are from and been has handbook this of type one type from ways: ESD Therefore, . the device protects protects the device from . questions be should prior answered to material selection : 1. How sensitive is field effects, 2. to potentially harmful Which handling material are the 5. Are the clean costs plastics conducting with entering already it may in that insulative. electricity and are materials. cause the for an level the product? with the environment (i. damage of to a e. a sensitive environment? are highly static sources They prime As during consistent materials product/package where the and package product? of device? occur can protection the are other the of value room) device provide device? compatible the will the destroy How shock? distribution? the How Is and and vibration, events of 4. rubbed take What projected Most it does ESD, volts sensitivity 6. direct triboelectrif ication, to product many product's 3. the insulators resistant to they are when they have high surface 77 holding resistivities, achieve must add offer many Some desirable the of important? and Conductivity heat anti-static in agents one 1. Topical 2. Impregnation 3. Metallization To reduce 2 To increase . Topical anti-stats wiping, brushing, method adding hydrophilic non-ionic or of (on the surface requirements stated toughened, by the application of ways: the of simple surface) the volume of the material) friction surface dipping anti-static the materials. conductivity approximately on plastics surface water-absorbing groups it functions: two rolling, for producing involves three coefficient are enhanced (throughout serve 1. be can of the other is etc. application Topical "anti-stats Why cleanability, sealability, cost, material a in by to possible, plastics. matched not listed were reasonable of and materials As flexible packaging materials, attributes availability, insulative necessary, insulative to attributes transparency, above: is It enhanced. properties conductive necessary be essentially To generate. they charge whatever from levels performance conductivity to on surfaces coatings or mopping. properties 35% of anionic, of the and in are "The commonest synthetic surfactant, cationic, material" material which or (6) one . by applied is of a the 78 While by they decrease can their dependence on thus temporary, surface topical humidity, allowing generation static anti-stats to material a and resistivity are essentially its insulative hygroscopic consisting to return state. Topical two of parts: (e. carrier behind. The stats to are the not subsequent thus Anti-stats compounded decreasing that can into the with be 40 particle carbon to is When hit with plastic a into used to become is then is presently charge, Heat they to causes Some anti- moisture attracting as increase surface the a Carbon or contaminant The will vary is distributed in the is method to the tendency sensitive development addressing the conductive powder conductive-based material. carbon exposed. been have material Anti-static properties this a a processing. how evenly the and of moisture layer. moisture Instead during often disadvantage processes the conductivity, the volume. and off of anti-stat the ability to charge triboelectrically. plastics of size flake insulative coating 55% One plastic. The - loss the heat. as the applied, environmental on dissipated impregnated are carbon-based material It dependent increase to leaving evaporates, is Once anti-stat. dependent. humidity surface lubricity, is though, energy, and evaporation an and alcohol) water, anti-stat Static work. carrier a g. detergent-based and are anti-stats carbon for devices. of better the charge problem. carries 79 the along must charge a shield is heat into be weakened, (like to RFI thus These ground. EMI. and Also, by its tear decreasing most so the the of the electrical of energy do materials adding to material dissipate to surfactants), the of volume insufficient conducted against the through is Resistance ground. energy or surface a provide not the material carbon and resistance puncture resistance. One include the an surface off, more as more some the anti-stat to films which migrates to migrate the on surface the to This extruded. are to the surface, anti-stat is conductive more foams and As the conductive. continues insulator an rendering anti-stat suspends method of method other making surface wears replenishing the supply. Laminating a metallized of conductivity film opaque SURFACE Surface and total AND (see is charges ohms. appendix measuring the used STATIC is a over D structure This for EMI can also process or RFI may enhance the render the attenuation. DECAY material's its To measure ASTM a material. generally resistivity resistance By is RESISTIVITY electrostatic use. the in layer 257) resistivity surface. surface ability The unit resistivity dissipate to of measure ohms/square for is . of a material to the flow of 80 of explanation ESD decay is DOD classified free FREE Conductive Conductive the quickest decay properties section that charge to These a decay. static charged material specific based materials decay. shielding of of on level. surface classifications Each materials. is to are further parts. MATERIALS material 105 with a classifies and are ohms/sq (MIL-P-82646 impregnated have which at materials of resistivities also static an . will 263 into three ELECTROSTATIC or level and electrostatic seconds. rate Handbook resistivity 1. the for 6-A diagram (See conductivity- materials predetermined The its ohms/square) protective Static a knows one electrons, less and lists examples) metal, materials or defined to for a static having decay rates These materials example. dissipate as Conductive charge. are surface of 0.05 filled materials are The resistance of the aquare dimension, feet, inch, Is constant, regardless of yard. etc. / Two 5 + 5 = Addition Each squares side by side become a series connection: 10. path carries of a third piece only half the provides a second current. DIAGRAM 81 6 -A (paraHel) path. 82 Conductive when so non-resistant, materials the quickly charge 2. by STATIC a charge, Conductive charge allowing depends dissipated can on materials cause to hit it to the allow a device an it is exposed, material a the as electrons for touches it.) drain. material's of removal MATERIAL between materials 105 and 109 defined are ohms/sq and as having static decay surface of rates seconds. Static dissipative conductive sightly preferred. play is DISSIPATIVE dissipative resistivities a distribute charge beg could discharge of conductive it that rapid a Charged- the on product conductive That flow if the based and products sensitive grounding. Static 0.2 be very damage ESD charged will resistivity. electrical shield of itself. (Ironically, Conductive How a there to neutralize event. may be If . surface, conductive ESD (CDM) Model attempts to used is the possibility there Device are materials and materials anti-static but slower, (Keep in in protection 3. ANTI-STATIC Anti-static of a materials. safer mind are rate. that devices) all welcome Charge dissipation Therefore, three between compromise these materials occurs materials have a role . MATERIALS materials have surface resistivities between at are to 83 109 and 1014 ohms/sq and II Type B-81705C, for hygroscopic Materials with surface insulative. chart 6-B Static for Anti-static that charges are materials adequate Anti-static charged The conductive Conductive clean the for material off room materials with to most are cannot use charged is true that that are a unless of any purpose anti-statics loaded contaminate As with the are The path they most for These separating. they least (See surface. conductive charge. a applications, serve a or rubbing considered materials. the on provides dissipate be is environment. and usually the (This and layer are decay.) static and during materials materials apply to these moisture friction slowest materials these a created by induction. reason slough have 1014 and greater MIL- (see seconds. materials.) antistatic not resistivity reduces protection These used. surface are does 2 of rates resistivities decay plastics layer moisture decay static provide commonly expensive. they are isolated conductive that are carbon, cannot clean material). be by met materials. for example, environment, and such can as a STATIC-FREE CLASSIFICATION CATEGORIES RESISTIVITY Polymer Film 1014 or Antistatic 109 - Static Dissipative 10s - Conductive Less DISCHARGE RATE (SECONDS) (OHMS/SQ) Normal STATIC greater NA 1014 Greater than 2 109 Greater than 0.2 than CHART 84 10s 6-B sec sec Greater than 0.05 sec 85 Anti-statics charges electric materials A anti-static Can be Resist Depend and Do lubricity be Are everyday fibers static develop is of The surface add are hygroscopic The same thing could rinsed of away! handling, be base the lost, generation is risked separation through product all removes so Anti-static be will charge anti-static resistances attract generation charge required method dryer moisture and in materials problems by and generated. conditioners, completely all influenced laundry- the other by humidity, lubricity may be retreatment example with prevent be exposed, will solve to affected their or aging not they: contact on material for other or induction by triboelectrification Should not and show materials charged intimate An themselves from separation upon minimum produce and . of review triboelectrif ication resist moisture, accomplished conditioner moisture, high agents, a is that via soap-based lessening if the and large synthetic amounts liquid agent! the laundry used or The static soap of sheet agents charge. were not SHIELDING MATERIALS Shielding materials force of items within a field, the materials are shielding, EMI must have are so surface effect of the the field, item and so EMP/RFI of properties and produce its free (6) . do reach the not Shielding ESD parts: These materials materials. of of an stored or function of selection of (See diagram 6- attenuation reach not Shielding is (see DOD-HANDBOOK-2 63 for resistivity, the three capable are effects damage" in lessening them. shielding. static materials that damage classified or does field and material further "Electrostatic shielding contained attenuating shielding, the electrostatic of shielding also all capable proper the a 4 materials) C) (10) 1 . Shielding is . 10 or less ohms/square. . ESD SHIELDING MATERIALS ESD shielding materials have a resistivity of attenuating all less of than an 1 x 104 conductive ohms/square electrostatic field. 86 layer and with are a surface capable of SHIELDING ESD Those field, Items and shall than 10 that so 1 are which materials its of capable effects do attKen^ati^nrapnde^C^^^5 gained or the stored reach not material gelding An electrostatic damage. less of: surface resistivity a with layer conductive less of than resistivity volume produce have 10 x a ohms/square, or a ohms-cm. EMI Those materials electromagnetic read items or 25% of field, the capable are which so that is field SHIELDING pulse 50 GHz at excluded an a attenuating attenuation from the stored of or d^am^ 25 db is contained . EMP/RFI Those of materials or radio which are frequency capable SHIELDING of attenuating an interference TABLE 6-C field in any electromagnetic magnitude. 2. EMI EMI SHIELDING MATERIALS is shielding electromagnetic 3. field (where 50 25% attenuating of capable GHZ db is 25 of (EMP) or . SHIELDING MATERIALS EMP/RFI EMP/RFI shielding is capable of attenuating pulse read) dynamic a of field (RFI) interference frequency radio electromagnetic an in any magnitude. Remember two the main triboelectrification Conductive and device "cage" cage be must is charge shield a the of will but material a keep removed station A be not in mind unless It that in will the is a whatever swept inside a complete sensitive The material. bag. is "cage" because the surface across inside necessary to even of of with a the means conductive Whatever is induction "cage" be quickly not presence That metallized penetrate dissipated. damaged. with field. deal materials used. charge: static a electrostatic an conductive conductive is induced and be must by surrounded that by To adequately deal An electrostatic field cannot any generating anti-static or normally of induction and triboelectrification. conductive methods the completely the material ground "cage" static a "cage" cannot free be work . Faraday Cage is an electrostatic 88 shield. While it should 89 the surround of continuous electrically pattern EMI or shielding, holes unbroken material The continuous. instead shielding it is to protect, object (less in the of on than 10 shield other surface hand, ohms/sq) (2) . long as conductive covering the the it does and not as the material completely requires cannot have to be made material form can a is grid - highly tolerate conductive large spaces CHAPTER 7 3 Chapter presented insulative others The how than conductive a less materials, some one , one. relative a (chart 3-A) The charge. static is insulativity or conductivity to relate they and materials conductive on to the triboelectric series According more discussion and MATERIALS PROTECTIVE ESD a materials of concept be EVALUATING - material can conductive than devices must . flexible protect those fields. In it qualify, from devices for order be must to used materials A tested. three 1. Chemical Analysis 2. Mechanical Analysis 3. Electrical Properties of the scope the electrical three of presented this abridged in the CHEMICAL ANALYSIS Chemical analysis In electrostatic and shielding primary material evaluation to of : Analysis a to order and and by 90 detailed on the the represent mechanical simplified represented long center will chemical following is (10) represents handbook properties. an spectrum, stages complete, stages of Each or static-free a sensitive generation charge consists materials protect analysis. analysis test entire analysis will terms. the following tests (10) of : be 91 Solderability Ion Analysis Free Corrosion Corrosion Contact The of the plus to chemical of essence and material a corrode, the device. new whole MECHANICAL ANALYSIS Mechanical analysis is ascertain If the of series material solder with problems creates additives) is to analysis problems represented by the or must the compatibility (a complex causes the be dealt following polymer device with. tests (1) : Tear Puncture Abrasion Tensile Elongation Heat Sealability WVTR If the material used characteristics, puncture yields a resistance bag poor protecting a to protect new can from of is that seals, device set device has inappropriate a problems too disable other low, a or will heat package threats. arise. physical Tear sealability and prevent it and that from ELECTRICAL To ANALYSIS best represent electrical be separated by will FOR ANALYSIS Each free static mentioned: the OF Surface 2. Static 3. Triboelectrification Resistivity Decay ASTM-D-257 - FOR ANALYSIS OF 1. Surface Resistivity 2. Static 3. Triboelectrification 4. Capacitance 5. EMI Attenuation test and performance SHIELDING MATERIALS Decay - - INCLUDE: ASTM-D-257 - Method FED-STD-101C, Probe Test Faraday Cup - 4046 Method FED-STD-101C, - previously INCLUDE: MATERIALS 1. materials properties. shielding STATIC FREE protective characteristics performance and ESD analysis, Test EIA Test Faraday Cup - 541 EIA - 4046 541 standard is included in the appendix. QUANTUM ANALYSIS Quantum occurs the analysis once a level has been tested scrutiny. and mechanical for a specific Keep protecting the device of and How will may of material testing has been analyzed, this in mind: properties use. level secondary the primary material deeper is knowing be not critical a enough role determine how 92 it must completed. be to qualify Once to chemical, a packaging analysis that subjected electrical, the much testing is material plays in required. 93 Quantum analysis to the type regard lifetime. between chemical Quantum analysis determine changes the that information over properties could time. The be levels would be studies chemical and shock yield would testing. of to temperature of of electrical retested. by affected adversely storage. any testing, solderability, properties relationships record abuse in in its see term influence physical primary the weathering and acclerated by analysis, physical aging secnarios could long and term with provided are accelerated the and coupled not fundamental these occur corrosion addition, long of humidity all vibration, and could relative and include would effects interest life, shelf change, case worst material a abuse of particular of to material degree and is What the subjects In analysis, Any one of accelerated testing. Quantum is analysis professional packaging would in-depth testing is more be professional the sensitive right device. type responsible know must called information that is making the not for made material for what by the and a completing. to ask needs available, choice testing of the of packaging But, supplier the successfully if for product. the better the the chances The for packaging a GLOSSARY Alpha particle two that neutrons Ampere (amp - or is 6.24 A 1018 x protons and molecules. air coulomb/second) two with particle charged ionize can current of ampere A positively - electrons in point one passing One current. electrical of unit a second. Anti-static to 1014 more Material - than slowly Bipolar Device Bonding - either A - a Capacitor/Capacitance is - Charge Measured - by measured charge) (positive A - of number charge) Component to is voltage Current period the - of electrons it is usually per second Device - component A = per body a on is (negative body the on not electrons of device body points. failure allows it current a it through or Less than resulting 10s of when .a ohms/sq. from multiple events. electrons second, that along past Measured in amperes. stated one A - related flow time. of farad picofarads or charge static material continuously across any two Failure to exposures A - travel ESD a device. semiconductor applied Cumulative and store Since used. commonly separated to material . Conductor/Conductive electrons grounded. (millionths) The coulombs. semiconductor. the number of separated electrons on the the , in more charges off materials. in farads. measured microfarads are a of ability Capacitance is charge. large number, very (millionths of millionths) a is that conductor The dissipative sensitive power or bleed materials or conductive current Connected to electric Antistatic square. per ohms 109 between resistance surface exhibiting a but in terms since of point certain a is Current the would number coulombs per in a measured second. be specific in terms too One large, coulomb ampere. package of electronic . 94 circuitry; a semiconductor or a 95 Breakdown Dielectric where, become electrons current DIP the the through travel medium bound medium, a as medium . Usually of per optimal Overstress dielectric layer or Electromagnetic (EOS) prime or person fast too neither rate, charged exhibiting surface Dissipative materials square. nor May - junction 105 of bleed charge off 1010 to resistance at an in resulting within melt a puncture a of a device. the field from ESD an with out Electromagnetic - shield circuits. slow. start source static small too integrated pins. of rows Material - Electrical two with for housing A Package. plastic molded Dissipative ohms dielectric a across strength and in effect threshold field unbound Duel-in-line - A - electric some at from results a field. rapidly moving electric field and its associated The shield is a housing placed around devices or circuits to the effect of both electric and magnetic fields. reduce electrical charge magnetic Electron equal to - A negatively Electrostatic which 1.6 about Field another Shield an effects of good Electromagnetic lightning, in Protection signals special not or air radio from circuit EMI that charged and between prevents offer much the two . points penetration protection (EMI) in object experience against EMI a at of the shields, shields. (EMI) - Sources are static sparks, etc. transmissions, By line EMI can induce undesirable voltage causing malfunction and/or damage. tv and propagation, electronic gradient interference Interference radar, the electrostatic equipment the requires use of shields, filters, and design. Electrostatic Discharge two May electromagnetic are conduction is electrically be induced can A barrier field. electrostatic however, - an charge it force. Quantitatively, different potentials. Electrostatic coulomb. Surrounds - electrical an with particle charged 1019 x (ESD) - A sudden transfer of charge between objects. Describes devices Sensitive (ESDS) damage from electrostatic discharge ESD - that are vulnerable to - Faraday which Cage - provides An electrically electrostatic continuous, shielding. conductive enclosure 96 Ground A - or potential water a of voltage Insulator A - ground, or to earth ground any large does that material to respect with power any building. pipes, the with connection metallic or member A electricity. conduct not Includes structural metal zero establish earth. nonconductor. Integrated Circuit (IC) transistors, resistors, Ionization The process as - a acquires air, etc. capacitors, by or in a includes which package. single atom neutral a which positive device electronic Any - or such molecule, charge. negative unit of energy. The energy of a static discharge is 1/2 voltage C capacitance or the discharging object and V difference between the discharging object and the point to which it discharged. Joule CV2 A - Latent = = where Failure been previously MOS Device A - Failure that occurs and degraded - when by weakened device is having a using ESD a device that has exposure. metal-oxide layer semiconductor be damaged by a static discharge or by induction from an electrostatic field. Damage occurs as dielectric breakdown when the voltage or electric field across the dielectric layer between two relatively conductive layers exceeds the dielectric strength of that material. structure Ohm one A - a to unit ampere Package wrap, of will The - pouch, perform 1 voltage- which one electrical flow enclosure bag, or 2. more 3. of of electric-field voltage of one or magazine, the following and which volt devices, products, other or is a can current ci applied other packages in form so as container functions: transportation, of protection and sensitive through resistance for handling, Preservation life of slide, Containment . a when or the and use contents for the item the Identification of including quantity contents, and manufacturer 4. Facilitation Packaging process such as - of In circuits printed during external onto connections use of the contents. packaging refers to the protecting various devices, and film thin fabrication. elements and industry, connecting, easy-to-handle convenient dispensing electronics location, interconnected into the of The called to be wafers circuits packages made to it. electrically are then which place permit 97 Potential from in Measured - base a point Radio - includes electronic or electrical the is discharge static Resistance through a bulk a resistance, flow) by is the resistance Resistivity a - conduct current unit volume of Surface a of measure the of independent the where usually spark from a measurement The is the on the temperature, and depends and current (electron of unit practical ohm. Resistivity materials of difficulty in passing The material voltage. given of resistivity is across passes a range The electrical produced operation proper resistivity, dimensions, Resistance of a material determines the voltage. being of capable frequency conductor. or property material's electromagnetic of spectrum. encounters current circuit electrical an work. of RFI. source Electrical - The electromagnetic entire the do to able signal . equipment. is usually ground, form A frequency interference. interference (EMI) Any electrical of propagated and interfering with RFI is Measured kilovolts. but voltage energy that Stored zero. theoretically be any can or volts, millivolts, which intrinsic ability of the dimensions of the current The ohm-cm. The ratio - surface to material a material. of DC voltage the of to the is conduction current that for Relevant system. only on only virtually the Surface resistivity is not relevant for volume conductive The unit of surface resistivity is ohms/ square. materials. surface. Triboelectric rubbing - Triboelectric of them An can charge electrical series two of separation or - A list become positively of substances charged down the list, or negatively charged The further apart the up the list. charge generated. Volt (V) - the One volt will one unit send This of a voltage, when when rubbed a firctional one with with the so that any further one further greater the one guide. potential, of arranged rubbed substances, is only series current by generated surfaces. ampere and electromotive through a force. resistance of ohm. Volume The ratio of DC voltage per unit of thickness, two electodes in contact with or embedded in a the amount of current per unit area passing through Resistitivy applied - across specimen, to the system. Generally geven in ohm-cm. REFERENCES "ESD 1. Frank, Donald Avionics Maintenance 2.Dhar, Control Tarak E., Conference Manufacturing," Hayden Book 4.Gussow, Milton, 5.Jonassen, Neils, Symposium, 1984. 6.Matisoff, Bernard, (ESD)," 7.NAVSEA Manual," "The Physics "Handbook of of and 1981. Discharge "Electrostatic Park, Design and 1983. NJ, Handbook. Theory and Problems Technical of Basic 1983. Series, Electrostatics," of EOS/ESD Electrostatic Discharge Controls SE 003-AA-TRN-010, "Electrostatic Discharge Training 1980. Stephen, "Facility Evaluation: Isolating Not Published, used by permission of Problems," 9. Halperin, Stephen, Organization," lO.Hoge, Parts," 1986 8. Halperin, ESD Vocational April Rochelle Control "Schaum's Outline Schaum's Electronic Microelectronic Company, 3. 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Dangelmayer, Plan," EOS/ESD Glen, Antennas," March Symposium, "Understanding Reprint Douglas D. Paper and 1986, pp - 86. Electrostatics," Applied Does 80 Happen?," It Systematic ESD EOS/ESD Control 1984. Electromagnetic Compliance Fields and Receiving Engineering. Prevention Costs," Quality, 30. "Evaluating October E., Conference, from of Often How "Electrostatic - Irving, Engineering, Frank, - "A Realistic T., Dixon, Robert F., June 1982, pp 29 Deugatch, "ESD Electromagnetic Evaluation "System Level Engineering, Crowley, Joseph M., "Fundamentals John Wiley and Sons, NY, 1986. Dash, 44 - "ESD... Enemy Gregory J., Materials Discharge: "Electrostatic R., Packaging, William Armstrong, 15 1987, August Engineering, Discharge," Electrostatic Beels, Factory Electronics an 90. - Armstrong, Off in "An ESD Audit Jerry, Anderson, 1986, pp "ESD Phenomenon 7072 Presented ESD 68 " Evaluation -81. 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Fundamentals Other Used A., of Sensitive with Halperin, Related to "Triboelectric Jr., NEPCON Losses West Controlling A., "How Series, Outline in the Complex in Control the Environmental Management Electronic Unpublished Manuscript - The and (1987) Author. of Packaging," Gains," 36. Isolating Static Static Environments," Permission S. for 26 - 1980. Symposium, "Guidelines Financial Schaum's Halperin, S. A., "Facility Evaluation: ESD Problems, "EOS/ESD Symposium, 1980. Halperin, -132. Materials," Milton, "Basic Hill, Inc., 1983. Halperin, ESD Solves 1985. Conference, Guiliano, May 1987, G., Fiber Steel "Stainless Gerteisen, to Identify Packaging and Static Control Technology, Problems June/July 1982. Halperin, S. A., "Facility Evaluation: Isolating Environmental " Unpublished Manuscript Used with Permission Problems, ESD of Author. Halperin, Reprint S. 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Semiconductor Wafer Processing: March Microcontamination, Edward, Russell, An Evaluation Salamone, Work Market," D. A., and Personnel 1986, D. J., Electrostatic Market Tweet, 100 Nears 85. A NOURY Chemical/AKZO 1983. Quality Can't You and Afford to A., Million and M. E. Protection "Classification, Handling 1988, pp 74 September Pounds, " Plastics Weight, Program, "An " Effective EOS/ESD Anthony Q., - Qualification Evaluation and Verification Engineering, 86. "Relative Humidity Electricity," as It Relates to Inc. /Sealed Air Document. Static Anthony Q., "Static Electricity in Testone Enterprises, Inc., 1980. Control Electronics the Industry," Unger, Chemelli, B., Measuring Be 1987. Material," Testone, New - Rief, "Internal Quality Auditing Symposium, 1986. Discharge Robert, Static into 78 1982. Symposium, Testone, pp D. December Industry News, Taylor, Charge May 1988, EOS/ESD "Static-Control Strand, C. EOS/ESD "Constant Monitoring: Symposium 1987, B., Without," of and September Agents," William Control," ESD Surfaces Plastics World, Plastics I., "Antistatic Chemie America Document, March 15, Smith, 30. - Engineering, "Conductive Salvatore, Schmitt, Smith, "Controlling ESD in Example," pp 24 Safe Origin, 99. - Electronic of 1986, form Unknown Reprint Hill, 1986, "Static H., Update," Safety ESD March Engineering, Evaluation in Mechanisms ESD-Induced of Renaud, 90 1988, -75. Reich, pp in ESD Deficiencies December Engineering, "Failure Analysis Circuits," Integrated 66 Evaluation Alarming Shows "Study 95. - Raymond, pp J., Different Technology, R., and D. Materials' February 1987, pp L. Hart, "Buried Effectiveness," 23 -27. Shielding: EOS/ESD 103 Chemelli, Unger, B., System for Electrostatic Communications 100 - and Ionization "A Room Control," A Bell Document. Evolution for Performing ESD Control June 1988, Engineering, M., "Protective Packaging for Electronics: Packaging, April 1984, pp 50-54. James What's Ahead?," Wynes, T., Modern Plastics and Antony Castro, Encyclopedia, "Antistatic 1975 James R. Huntsman, Military Specification MIL-B-81705: Simple Model for Static Protection, Systems/3M Document. D. Dust 108. Weatherall, Yenni, Bossard, Peter "Guidelines Evaluations," Program and Charge Research Inc. Spyros A., Vrachnas, pp R., M. Yenni, D. Prevention," M. and James A R. "The Deficiencies Considerations " Huntsman, Static Reprint -1976. and Damage Agents," Control Static "Quality in and a Control Through Static Systems/3M Document. form APPENDICES A body of literature phenomena as they substantial electrostatic packaging exists, EIA Standard Sensitive and is relate regarding to protective incorporated herein by reference. Packaging Material Standards for ESD (EIA-541) , (Washington, DC, Electronic 541: Items Industries Association), MIL-STD-1686C 1988. Department of Defense Standard Practice Electrostatic Discharge Control Program for Protection Electrical and Electronic (Excluding Electrically MIL-HDBK-2 63A Handbook for Military Protection Assembles and Explosive Devices) MIL-B-81705C Flexible, Parts, Assemblies Initiated Handbook of Explosive - and and (Excluding Electrically 1991. (Metric) Military Electrostatic . 1995, Discharge Electronic Equipment of Equipment Devices) Electrostatic Electrical - Parts, Initiated . Specification Protective, 104 - Barrier Heat Materials, Sealable. 1989.