SG1536 High-Voltage Operational Amplifier Description Features The SG1536 series of monolithic amplifiers is designed specifically for use in high voltage applications up to ±40 V and where high common-mode input ranges, high output voltage swings, and low input currents are required. These devices are internally compensated and are pin compatible with industry standard operational amplifiers. High Supply Voltage Capability High Output Voltage Swing High Common-mode Voltage Range Internal Frequency Compensation Input Current 35 nA Maximum Over Temperature High Reliability Features Circuit Schematic Available to MIL-STD – 883, 1.2.1 MSC-AMS level “S” Processing Available Available to DSCC V+ R1 6k R16 12 k R12 1k R11 1.5 k Q16 Q17 Q1 R17 1.2 k Q22 R21 28 k Q3 Q2 R2 500 INPUT Q4 _ + R7 500 R3 1.5 k D3 Q33 R25 15 k R18 200 Q18 R8 Q6 1.5 k Q5 D1 Q19 Q15 Q32 R22 28 k Q23 Q34 Q24 R26 26 Q20 OUTPUT D4 Q7 D2 Q28 Q29 R13 4.7 k INPUT R14 3.5 k Q13 Q8 R27 22 Q21 Q25 Q26 35 pF Q36 Q35 Q14 Q9 5k Q12 Q11 R4 7.7 k Q30 R19 Q10 R9 R5 R6 1 k 39 k 1 k OFFSET ADJUST D5 7V Q27 R23 500 Q31 D6 7V D7 R10 7.7 k R15 39 k R20 39 k R24 50 k V- Figure 1 · Circuit Schematic June 2015 Rev. 1.2 www.microsemi.com © 2015 Microsemi Corporation 1 SG1536 High-Voltage Operational Amplifier Connection Diagrams and Ordering Information Ambient Temperature Type Package Part Number Packaging Type Connection Diagram SG1536T-883B N.C. OFFSET ADJUST -55°C to 125°C T 8-pin metal can SG1536T-DESC TO-99 -55°C to 125°C Y V+ 7 2 NON INVERTING INPUT SG1536T 8-pin ceramic DUAL INLINE PACKAG E INVERTING INPUT 8 1 6 3 4 5 OUTPUT OFFSET ADJUST V- SG1536Y-883B SG1536Y-DESC CERDIP OFFSET ADJUST 1 8 INVERTING INPUT NON INVERTING INPUT 2 7 V+ 3 6 OUTPUT V- 4 5 OFFSET ADJUST N.C. SG1536Y Notes: 1. Contact factory for DESC product availability. 2. All packages are viewed from the top. 3. Hermetic Packages T, & Y use Sn63/ Pb37 hot solder lead finish, contact factory for availability of RoHS versions. Absolute Maximum Ratings Parameter Supply Voltage Differential Input Signal Common-Mode Input Swing Output Short Circuit Duration (V+ = |V-| = 28 V, VO = 0 V) Operating Junction Temperature Hermetic (T, Y Packages) Storage Temperature Range Lead Temperature (Soldering, 10 seconds) Note: Exceeding these ratings could cause damage to the device. 2 Value + ±40 - Units V ±(V + |V | - 3) V +V , -(|V | - 3) 5 V 150 -65 to 150 °C °C 300 °C + - s Thermal Data Thermal Data Parameter Value Units T Package Thermal Resistance-Junction to Case, θJC 25 °C/W Thermal Resistance-Junction to Ambient, θJA 130 °C/W Thermal Resistance-Junction to Case, θJC 50 °C/W Thermal Resistance-Junction to Ambient, θJA 130 °C/W Y Package Notes: 1. Junction Temperature Calculation: TJ = TA + (PD × θJA). 2. The above numbers for θJC are maximums for the limiting thermal resistance of the package in a standard mounting configuration. The θJA numbers are meant to be guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. Recommended Operating Conditions Parameter Value Units Supply Voltage Range SG1536 ±12 to ±36 V Operating Ambient Temperature Range SG1536 -55 to 125 °C Note: Range over which the device is functional. 3 SG1536 High-Voltage Operational Amplifier Electrical Characteristics Unless otherwise specified, these specifications apply over the operating ambient TA = 25°C and VS = ±28 V. Low duty cycle pulse testing techniques are used that maintains junction and case temperatures equal to the ambient temperature. Test Conditions Parameter Input Offset Voltage SG1536 Min Max 2.0 5.0 mV 7.0 mV 3.0 nA TA = TMIN 7.0 nA TA = TMAX 4.5 nA 20 nA 35 nA TA = TMIN to TMAX 1.0 Input Offset Current Input Bias Current Units Typ 8.0 TA = TMIN to TMAX Differential Input Impedance Open loop, ≤ 5.0 Hz 10 MΩ Common-Mode Input Impedance f ≤ 5.0 Hz 250 MΩ Common-Mode Input Voltage Range (Peak) ±24 ±25 V Common-Mode Rejection Ratio 80 110 dB 200 k V/V 500 k V/V RL = 10 kΩ, VO = ±10 V Large Signal Voltage Gain Power Supply Rejection Ratio Output Impedance RL = 100 kΩ, VO = ±10 V 100 k TA = TMIN to TMAX 50 k 15 100 µV/V V constant, RS ≤ 10 kΩ + 15 100 µV/V f ≤ 5.0 Hz 1.0 kΩ ±17 mA V constant, RS ≤10 kΩ Short Circuit Output Current Output Voltage Swing (Peak) V/V - RL = 5.0 kΩ, VS = ±28 V ±22 V RL = 5.0 kΩ, VS = ±36 V ±30 V Power Bandwidth A = +1, RL = 5 kΩ, THD ≤ 5%, VO = 40 Vp-p 23 kHz Unity Gain Crossover Frequency Open loop 1.0 MHz Slew Rate Unity gain 2.0 V/µs Phase Margin Open loop, unity gain 50 deg 18 dB Gain Margin 4 Electrical Characteristics (continued) Electrical Characteristics (continued) SG1536 Test Conditions Parameter Min Typ Units Max Equivalent Input Noise Av = 100, Rs = 10 kΩ, f = 1.0 kHz, BW = 1.0 Hz 50 Power Supply Current (Note) 2.2 4.0 mA Power Consumption VO = 0, VS = ±36 V 124 224 mW nV/√Hz Note: VCC = VEE = 36 V for SG1536. VCC = VEE = 28 V for SG1436. Characteristic Curves 70 35 OUTPUT VOLTAGE (Vp-p) 2 3 50 AC 40 OUTPUT VOLTAGE SWING (Vpeak) +28 V 60 7 4 6 Vo 10 k -28 V 30 20 10 30 25 20 15 10 5 0 0 4 6 10 20 40 100 FREQUENCY (kHz) Figure 2 · Power Bandwidth 200 400 TA = +25 °C RL= 5 kΩ 0 ±10 ±20 ±30 ±40 POWER SUPPLY VOLTAGE (VDC) Figure 3 · Peak Output Voltage Swing vs. Power Supply Voltage 5 High-Voltage Operational Amplifier OUTPUT SHORT-CIRCUIT CURRENT (mADC) Characteristic Curves (continued) +140 VOLTAGE GAIN (dB) +120 +100 +80 +60 +40 +20 0 -20 1.0 10 100 1.0k 10k 100k 1.0M 10M 100M Figure 4 · Open-loop Frequency Response INPUT BIASED CURRENT (NORMALIZED) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (°C) Figure 6 · Input Bias Current vs. Temperature 6 28 24 20 SOURCE 16 SINK 12 8 4 0 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (°C) FREQUENCY (Hz) 0 32 Figure 5 · Output Short-Circuit Current vs. Temperature Application Information Application Information R2 100 k +28 V 2 3 _ 6 SG1536 + 1 VA R1 10 k 2 _ 7 SG1536 5 VB 10 k 3 R3 470 6 VO = 10 (VB -VA) + 4 R4 4.7 k -28 V V- Figure 8 · Differential Amplifier With ±20 V Common-Mode Input Voltage Range Figure 7 · Voltage Offset Null Circuit +28 V +28 V VIN= 4.4 VP-P 7 3 + 6 SG1536 2 3 SAMPLE COMMAN5 7 2 6 SG1536 SWITCH e IN _ + 4 +1.0 µF PolycMrNonMPe _ 4 e OUT -28 V 5 1 VO = 44 (VP-P) 10 k RL≥ 5 k 9k 1k -28 V DrifP due Po NiMs currenP is PypicMlly 8 mVCs Figure 9 · Low-Drift Sample and Hold Figure 10 · Typical Non-inverting x 10 Voltage Amplifier 7 High-Voltage Operational Amplifier Application Information (continued) R2 100 k +50 V -VIN R1 100 k 2 _ 7 6 SG1536 3 + 4 -6 V R4 100 k RTC 510 R3 100 k 1 I0 = 2 mA/V = VIN RTC R1RTC (R3 + R4) R0 = R1 (RTC + R3) - R2R4 Figure 11 · Voltage Controlled Current Source or Trans-conductance Amplifier with 0 V to 40 V Compliance 8 Package Outline Dimensions Package Outline Dimensions Millimeters Min Max DIM D e D1 1 L1 F A e1 D 8.89 9.40 0.350 0.370 D1 8.00 8.51 0.315 0.335 A 4.191 4.699 0.165 0185 b1 0.406 0.533 0.016 0.021 F - 1.016 - 0.040 e1 2.54 Typ e 8 SEATING PLANE L α 5.08 Typ 0.200 Typ 0.711 0.864 0.028 0.034 k1 0.737 1.14 0.029 0.045 L 12.70 14.48 0.500 0.570 k1 α b1 0.100 Typ k N k Inches Min Max 45° Typ 45° Typ N 3.556 4.064 0.140 0.160 L1 0.254 1.016 0.010 0.040 Note: Dimensions do not include protrusions; these shall not exceed 0.155 mm (0.006″) on any side. Lead dimension shall not include solder coverage. Figure 12 · T 8-Pin Metal Can TO-99 DIM D 5 8 E 11 4 A Q H e b L SEATING PLANE c Inches Min Max A 4.32 5.08 0.170 0.200 b 0.38 0.51 0.015 0.020 b2 1.04 1.65 0.045 0.065 c 0.20 0.38 0.008 0.015 D 9.52 10.29 0.375 0.405 E 5.59 7.11 0.220 0.280 e eA b2 Millimeters Min Max 2.54 BSC 0.100 BSC eA 7.37 7.87 0.290 0.310 H 0.63 1.78 0.025 0.070 L 3.18 4.06 0.125 0.160 α - 15° - 15° Q 0.51 1.02 0.020 0.040 Note: α Dimensions do not include protrusions; these shall not exceed 0.155 mm (0.006″) on any side. Lead dimension shall not include solder coverage. Figure 13 · Y 8-Pin CERDIP Package Dimensions 9 Microsemi Corporation (MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: sales.support@microsemi.com © 2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. SG1536-1.2/06.15