NE532 - SA532
LOW POWER DUAL OPERATIONAL AMPLIFIERS
..
.
.
.
..
.
.
.
INTERNALLY FREQUENCY COMPENSATED
LARGE DC VOLTAGE GAIN : 100dB
WIDE BANDWIDTH (unity gain) : 1.1MHz
(temperature compensated)
VERY LOW SUPPLY CURRENT/AMPLI
(500µA) - ESSENTIALLY INDEPENDENT OF
SUPPLY VOLTAGE
LOW INPUT BIAS CURRENT : 20nA
(temperature compensated)
LOW INPUT OFFSET VOLTAGE : 2mV
LOW INPUT OFFSET CURRENT : 2nA
INPUT COMMON-MODE VOLTAGE RANGE
INCLUDES GROUND
DIFFERENTIAL INPUT VOLTAGE RANGE
EQUAL TO THE POWER SUPPLY VOLTAGE
LARGE OUTPUT VOLTAGE SWING 0V TO
(VCC – 1.5V)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
ORDER CODES
DESCRIPTION
These circuits consist of two independent,high gain,
internally frequency compensated which were
designed specifically to operate from a single power
supply over a wide range of voltages. The low power
supply drain is independent of the magnitude of the
power supply voltage.
Application areas include transducer amplifiers, dc
gain blocks and all the conventionalop-amp circuits
which now can be more easilyimplemented in single
power supply systems. For example, these circuits
canbe directly operatedoff the standard+ 5V power
supply voltage which is used in logic systems and
will easily provide the required interface electronics
without requiring any additional power supply.
In the linear mode the input common-mode voltage
range includes ground and the output voltage can
also swing to ground, even though operated from
only a single power supply voltage.
The gain-bandwidth product is temperature
compensated.
September 1995
Part
Number
Package
Temperature
Range
N
D
o
•
•
0 C, +70 C
•
•
o
–40 C, +105 C
SA532
o
NE532
o
Example : NE532N
PIN CONNECTIONS (top view)
1
8
2
-
3
+
4
1 - Output 1
2 - Inverting input 1
3 - Non-inverting input 1
4 - V CC
7
-
6
+
5
5 - Non-inverting input 2
6 - Inverting input 2
7 - Ouput 2
+
8 - VCC
1/10
NE532 - SA532
SCHEMATIC DIAGRAM (1/2 NE532-SA532)
V CC
6µA
4µA
100µA
Q5
Q6
CC
Inverting
input
Q3
Q2
Q1
Q7
Q4
R SC
Q11
Non-inverting
input
Output
Q13
Q10
Q8
Q12
Q9
50µA
GND
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply Voltage
Vi
Input Voltage
Vid
Differential Input Voltage
SA532
NE532
Unit
+32
+32
V
–0.3 to +32
–0.3 to +32
V
+32
+32
V
Output Short-circuit Duration - (note 2)
Notes :
2/10
Infinite
Ptot
Power Dissipation
500
500
mW
Iin
Input Current - (note 1)
50
50
mA
Toper
Operating Free-air Temperature Range
–40 to +105
0 to +70
o
C
Tstg
Storage Temperature Range
–65 to +150
–65 to +150
o
C
1. This input current only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistor becoming forward biased and thereby acting as input diode clamps.
In addition to this diode action, there is also NPN parasitic action on the IC chip. This transistor action can cause
the output voltages of the Op-amps to go to the VCC voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative.
This is not destructive and normal output will set up again for input voltage higher than –0.3V.
2. Short-circuits from the output to VCC can cause excessive heating if VCC + > 15V. The maximum output current is
approximatively 40mA independent of the magnitude of VCC. Destructive dissipation can result from simultaneous
short-circuits on all amplifiers.
3. VO = 1.4V, RS = 0Ω, 5V < VCC + < 30V, 0 < Vic < VCC + – 1.5V.
4. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of
the output so no loading change exists on the input lines.
NE532 - SA532
ELECTRICAL CHARACTERISTICS
VCC+ = +5V, VCC– = Ground, VO = 1.4V, Tamb = 25oC (unless otherwise specified)
Symbol
Vio
Parameter
Input Offset Voltage - (note 3)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
Iio
Iib
Avd
SVR
ICC
Vicm
CMR
IO
Isink
VOPP
VOH
VOL
SR
GBP
THD
en
VO1/VO2
Min.
Unit
mV
NE532
SA532
NE532
SA532
Input Offset Current
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
Input Bias Current - (note 4)
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
(VCC = +15V, RL = 2kΩ, VO = 1.4V to 11.4V)
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
Supply Voltage Rejection Ratio (R S = 10kΩ)
(VCC+ = 5 to 30V)
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
Supply Current, all Amp, no Load
VCC = +5V, Tmin. ≤ Tamb ≤ Tmax.
VCC = +30V, Tmin. ≤ Tamb ≤ Tmax.
Input Common Mode Voltage Range
(VCC = +30V) - (note 6)
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
Common-mode Rejection Ratio (R S = 10kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
Output Short Circuit Current
(VCC = +15V, Vo = 2V, Vid = +1V)
Output Current Sink (Vid = -1V)
VCC = +15V, VO = 2V
VCC = +15V, VO = +0.2V
Output Voltage Swing (RL = 2kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
High Level Output Voltage (VCC+ = 30V)
o
RL = 2kΩ
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
o
RL = 10kΩ
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
Low Level Output Voltage (RL = 10kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
Slew Rate (V CC = 15V, VI = 0.5 to 3V, RL = 2kΩ, C L =
o
100pF, Tamb = 25 C, unity gain)
Gain Bandwidth Product
(VCC = 30V, f = 100kHz, Tamb = 25oC,
Vin = 10mV, R L = 2kΩ, CL = 100pF)
Total Harmonic Distortion
(f = 1kHz, Av = 20dB, RL = 2kΩ, VCC = 30V,
o
CL = 100pF, Tamb = 25 C, VO = 2 PP)
Equivalent Input Noise voltage
(f = 1kHz, Rs = 100Ω, VCC = 30V)
Channel Separation
AV = 100
NE532 - SA532
Typ.
Max.
2
7
5
9
7
2
30
40
20
150
200
nA
nA
V/mV
50
25
100
dB
65
65
100
mA
0.7
1.2
2
V
VCC+–1.5
VCC+–2
0
0
dB
70
60
85
20
40
10
12
20
50
mA
60
+
0
0
mA
µA
V
VCC –1.5
+
VCC –2
V
26
26
27
27
27
28
mV
5
20
20
V/µs
0.3
0.6
MHz
0.7
1.1
%
0.02
45
nV
√

Hz
dB
120
3/10
NE532 - SA532
OP EN LOOP FREQUENCY RES P ONS E (NOTE 3)
LARGE SIGNAL FREQUENCY RES P ONSE
20
140
VOLTAGE GAIN (dB)
VCC
-
100
VO
VI
VCC /2
OUTPUT SWING (Vpp)
0.1 µF
120
100k Ω
10M Ω
+
80
VCC = 30V &
-55 C Ta mb +125 C
60
40
20
1k Ω
15
10
5
0
10
100
1k
10k
100k
1M
10M
1k
10k
VOLTAGE FOLLOWER PULSE RES P ONSE
1M
OUTP UT CHARACTERISTICS
10
4
RL 2 kΩ
VCC = +15V
3
OUTPUT VOLTAGE (V)
OUTPUT
VOLTAGE (V)
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
2
1
0
INPUT
VOLTAGE (V)
2k Ω
+
VCC = +10 to + 15V &
-55 C Ta mb +125 C
1.0
3
2
VCC = +5V
VCC = +15V
VCC = +30V
1
v cc
v cc /2
-
0.1
IO
1
Ta mb = +25 C
0.01
0
10
20
30
40
0,001
eO
50pF
400
Input
350
Ou tput
300
Ta mb = +25 C
VCC = 3 0 V
250
0
1
2
3
4
5
TIME (µs )
1
10
100
6
7
8
8
V CC
7
6
TO VCC+ (V)
+
-
0,1
OUTP UT CHARACTERISTICS
OUTPUT VOLTAGE REFERENCED
500
el
0,01
OUTP UT SINK CURRENT (mA)
VOLTAGE FOLLOWER P ULS E RES PONS E
(S MALL S IGNAL)
450
VO
+
TIME (µs )
OUTPUT VOLTAGE (mV)
VO
+7V
0
4/10
+15V
-
VI
VCC /2
5
+
VO
IO
-
4
3
2
Inde pendent of VCC
T amb = +25 C
1
0,001 0,01
0,1
1
10
100
OUTP UT S OURCE CURRENT (mA)
NE532 - SA532
CURRENT LIMITING (Note 1)
INPUT CURRENT (No te 1)
90
90
VI = 0 V
70
VCC = +30 V
60
50
VCC = +15 V
40
30
VCC = +5 V
20
-
80
OUTPUT CURRENT (mA)
INPUT CURRENT (mA)
80
IO
70
60
+
50
40
30
20
10
10
0
0
-55 -35
-15
5
25
45
65
85 105
-55 -35
125
TEMPERATURE ( C)
-15
5
25
45
65
85 105
125
TE MPERATURE ( C)
INPUT VOLTAGE RANGE
SUP P LY CURRENT
4
15
SUPPLY CURRENT (mA)
INPUT VOLTAGE (V)
VCC
10
NØga tive
P os itive
5
ID
mA
3
-
2
+
Tamb = 0 C to +125 C
1
Tamb = -55 C
0
5
10
0
15
P OWER S UPP LY VOLTAGE (–V)
160
20
30
100
R L = 20k Ω
INPUT CURRENT (nA)
VOLTAGE GAIN (dB)
10
P OS ITIVE S UPP LY VOLTAGE (V)
120
R L = 2k Ω
80
40
0
10
20
30
40
POSITIVE SUPPLY VOLTAGE (V)
75
50
25
Tam b= +25 C
0
10
20
30
POSITIVE SUPPLY VOLTAGE (V)
5/10
GAIN BANDWIDTH PRODUCT (MHz)
NE532 - SA532
VOLTAGE GAIN (dB)
160
R L = 20k Ω
120
R L = 2k Ω
80
40
0
10
20
30
1.5
1.35
1.2
1.05
0.9
15V
0.45
0.3
0.15
0
-55-3 5-1 5 5 25 45 65 85 10 5 12 5
TEMPERATURE ( C )
COMMON MODE REJECTION RATIO (dB)
P OS ITIVE S UPP LY VOLTAGE (V)
POWER SUPPLY REJECTION RATIO (dB)
VCC =
0.75
0.6
115
110
S VR
105
100
95
90
85
80
75
70
65
60-55-35-15 5 25 45 65 85 105 125
TEMP ERATURE ( C)
115
110
105
100
95
90
85
80
75
70
65
60-5 5-35-15 5 25 45 65 85 105 125
TEMPE RATURE ( C)
TYPICAL APPLICATIONS (single supply voltage) VC C = +5V DC
AC COUPLED INVERTING AMPLIFIER
Rf
100kΩ
CI
R1
10kΩ
1/2
NE532
eI ~
R2
VCC 100kΩ
C1
10 µF
6/10
RB
6.2kΩ
R3
100kΩ
AC COUPLED NON-INVERTING AMPLIFIER
R1
100kΩ
Rf
R1
(as shown AV = -10)
A V= -
Co
e o0
R2
1MΩ
A V= 1 + R2
R1
(as s hown AV = 11)
C1
0.1 µF
2VPP
Co
1/2
NE532
CI
RL
10kΩ
e o0
RB
6.2kΩ
eI ~
R3
1MΩ
RL
10kΩ
R4
100kΩ
VCC
C2
10µF
R5
100kΩ
2VP P
NE532 - SA532
NON-INVERTING DC AMPLIFIER
DC SUMMING AMPLIFIER
100kΩ
e1
AV= 1 +
10kΩ
(As s hown AV = 101)
R2
1MΩ
eO
100kΩ
+5V
e O (V)
1/2
NE532
R1
10kΩ
R2
R1
0
e2
100kΩ
e3
100kΩ
1/2
NE532
eO
100kΩ
e I (mV)
100kΩ
e4
eo = e 1 + e2 - e 3 - e4
where (e1 + e2) ≥ (e 3 + e4)
to keep eo ≥ 0V
HIGH INPUT Z, DC DIFFERENTIAL
AMPLIFIER
USING SYMMETRICAL AMPLIFIERS TO
REDUCE INPUT CURRENT
II
eI
R4
100k Ω
R2
100kΩ
R1
100kΩ
1/2
NE532
IB
if R 1 = R 5 and R 3 = R 4 = R 6 = R 7
2R1
e o = [ 1+
] (e 2 ± e1)
R2
As shown eo = 101 (e2 - e 1).
eo
2N 929
0.0 01 µF
R3
100k Ω
+V1
+V2
1/2
IB NE532
1/2
NE53 2
Vo
IB
IB
3MΩ
1.5MΩ
IB
1/2
NE532
Input curre nt compe ns ation
7/10
NE532 - SA532
HIGH INPUT Z ADJUSTABLE GAIN DC
INSTRUMENTATION AMPLIFIER
LOW DRIFT PEAK DETECTOR
R1
100kΩ
e
1/2
NE532
R4
100kΩ
R3
100kΩ
1/2
NE532
G ain adjus t
1/2
IB NE532
1/2
NE532
1
R2
2kΩ
eI
eO
C
1 µF
ZI
2IB
R
1MΩ
R7
100kΩ
R6
100kΩ
eo
Zo
2IB
2N 929
R5
100kΩ
1/2
NE532
e
IB
0.001 µF
IB
3R
3MΩ
IB
1/2
NE532
Input c urre nt
co mpe ns a tion
2
if R 1 = R 5 and R 3 = R 4 = R 6 = R7
2R1
eo = [ 1+
] (e2 ± e1)
R2
As shown e o = 101 (e2 - e1)
ACTIVE BAND-PASS FILTER
R1
100kΩ
+V1
R2
100kΩ
C1
330pF
1/2
NE532
R5
470kΩ
R4
10MΩ
R3
100kΩ
C2
330pF
1/2
NE532
R6
470k Ω
Vo
1/2
NE532
Fo = 1kHz
Q = 50
AV = 100 (40dB)
8/10
R7
100kΩ
R8
100k Ω
C3
10µF
VCC
NE532 - SA532
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP OR CERDIP
B
I
L
a1
A
e4
b1
B1
b
E
e
Z
e3
Z
D
5
1
4
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
PM-DIP8.EPS
F
8
9/10
NE532 - SA532
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
s
e3
b1
e
a1
b
A
a2
C
c1
a3
L
E
D
M
5
1
4
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
o
8 (max.)
SO8.TBL
Dimensions
PM-SO8.EPS
F
8
 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
10/10
ORDER CODE :
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this pub lication are subject to change without notice. This publ ication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.