APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Applications
 Point-to-Point Digital Radios
 Point-to-Multipoint Digital Radios
 SATCOM Terminals
Product Description
X = 3.65mm Y = 2.03mm
The APN229 monolithic GaN HEMT amplifier
is a broadband, two-stage power device,
Product Features
designed for use in SATCOM Terminals and
 RF frequency: 27 to 31 GHz
point-to-point digital radios. To ensure rugged
 Linear Gain: 20 dB typ.
and reliable operation, HEMT devices are
 Psat: 39 dBm typ.
fully passivated. Both bond pad and backside
 Die Size: 7.41 sq. mm.
metallization are Au-based that is compatible
 0.2um GaN HEMT Process
with epoxy and eutectic die attach methods.
 4 mil SiC substrate
 DC Power: 28 VDC @ 600 mA
Performance Characteristics (Ta = 25°C)
Specification
Frequency
Linear Gain
Input Return Loss
Output Return Loss
P1db
Psat
PAE @ Psat
Vd1, Vd2
Vg1
Vg2
Id1
Id2
Min
27
18
10
5
38
Typ
20
20
20
TBD
39
30
28
-3.5
-3.5
120
480
Max
Unit
31
GHz
dB
dB
dB
dBm
dBm
%
V
V
V
mA
mA
Export Information
ECCN: 3A001.b.2.c
HTS (Schedule B) code: 8542.33.0000
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1 ,Vd2
Id1
Id2
Vg1, Vg2
Input drive level
Assy. Temperature
(TBD seconds)
Min
Max
Unit
20
28
120
480
0
TBD
300
V
mA
mA
V
dBm
deg. C
-5
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 120mA, Id2 = 480 mA
Linear Gain vs. Frequency *
24
45
22
40
Pout (dBm), Gain (dB), PAE%
20
18
16
Gain (dB)
Power, Gain, PAE% vs. Frequency *
14
12
10
8
6
4
2
35
30
25
20
15
10
5
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
Max PAE%
0
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
26
Frequency (GHz)
-5
-5
Output Return Loss (dB)
0
-15
-20
-25
-30
-35
28
29
30
31
32
33
Output Return Loss vs. Frequency *
0
-10
27
Frequency (GHz)
Input Return Loss vs. Frequency *
Input Return Loss (dB)
Linear Gain (dB)
-10
-15
-20
-25
-30
-35
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer , ** CW Fixtured
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 120 mA, Id2 = 480 mA
Power, Gain, PAE% vs. Frequency
CW Fixtured
45
45
40
40
35
30
25
20
15
10
5
Linear Gain (dB)
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
Pout (dBm), Gain (dB), PAE%
Pout (dBm), Gain (dB), PAE%
Power, Gain, PAE% vs. Frequency
Pulsed-Power On-Wafer
35
30
25
20
15
10
Linear Gain (dB)
P1dB (dBm)
PAE% @ PSat
5
Max PAE%
0
0
26
27
28
29
30
31
32
33
26
Frequency (GHz)
38
38
36
36
34
34
32
32
30
28
27 GHz
26
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
Pout (dBm)
Pout (dBm)
40
20
29
30
31
32
33
Output Power vs. Input Power
CW Fixtured
40
22
28
Frequency (GHz)
Output Power vs. Input Power
Pulsed-Power On-Wafer
24
27
Gain @ Pin=0 dBm
Psat (dBm)
PAE% Max
30
27 GHz
28
28 GHz
26
29 GHz
24
30 GHz
22
31 GHz
20
32 GHz
33 GHz
18
18
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Input Power (dBm)
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 120 mA, Id2 = 480 mA
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
PAE% vs. Input Power
CW Fixtured
27 GHz
PAE%
PAE%
PAE% vs. Input Power
Pulsed-Power On-Wafer
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
31 GHz
32 GHz
33 GHz
Input Power (dBm)
Stage Currents vs. Input Power
CW Fixtured
700
700
600
600
500
Id1 27 GHz
Id1 29 GHz
Id1 31 GHz
Id2 27 GHz
Id2 29 GHz
Id2 31 GHz
Id 128 GHz
Id1 30 GHz
Id1 32 GHz
Id2 28 GHz
Id2 30 GHz
Id2 32 GHz
Drain Current (mA)
Drain Current (mA)
30 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
800
200
29 GHz
Input Power (dBm)
800
300
28 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Stage Currents vs. Input Power
Pulsed-Power On-Wafer
400
27 GHz
500
400
300
200
Id1 27 GHz
Id1 29 GHz
Id1 31 GHz
Id1 33 GHz
Id2 28 GHz
Id2 30 GHz
Id2 32 GHz
Id1 28 GHz
Id1 30 GHz
Id1 32 GHz
Id2 27 GHz
Id2 29 GHz
Id2 31 GHz
Id2 33 GHz
100
100
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 120 mA, Id2 = 480 mA
Gain (dB), Pout (dBm), PAE%
45
1.5
Pout (dBm)
AM-PM (Deg/dB)
1.25
40
1
35
0.75
30
0.5
25
0.25
20
0
15
-0.25
10
-0.5
5
-0.75
0
50
-1
0
5
10
15
20
25
30
Gain (dB)
PAE%
AM-AM (dB/dB)
45
Gain (dB), Pout (dBm), PAE%
Gain (dB)
PAE%
AM-AM (dB/dB)
AM-PM (Deg/dB), AM-AM (dB/dB)
50
CW Fixtured Gain, Pout. PAE%,
AM-AM & AM-PM vs. Pin @ 30 GHz *
1.5
Pout (dBm)
AM-PM (Deg/dB)
1.25
40
1
35
0.75
30
0.5
25
0.25
20
0
15
-0.25
10
-0.5
5
-0.75
0
AM-PM (Deg/dB), AM-AM (dB/dB)
CW Fixtured Gain, Pout. PAE%,
AM-AM & AM-PM vs. Pin @ 29 GHz *
-1
0
5
Pin (dBm)
10
15
20
25
30
Pin (dBm)
* In un-calibrated fixture with 2-tone input
Thermal Properties
Preliminary Thermal Properties with die mounted with 1mil 80/20* AuSn
Eutectic to 25mil CuW Shim.
Conditions
Vd = 28V
Id1 + Id1a = 211.6 mA **
Id2 + Id2a = 772.1 mA **
Pin=29.93 dBm (0.98 W)
Pout=38.53 dBm (7.13 W)
Shim Boundary
Temperature
25 ºC
47 ºC
50 ºC
Junction
Temperature
Tj
167.8 ºC
200.0 ºC ***
204.9 ºC
Thermal
Resistance
θjc
6.7 ºC/W
7.2 ºC/W
7.2 ºC/W
* Assumed thermal conductivity of 57 W/m/K
** Vd = 28.0 V, Idq1 = 120 mA, Id2q = 480 mA
*** Max recommended. Reliability testing indicates that MTTF in excess of 106
hours can be achieved by ensuring Tj is kept below 200ºC.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 120 mA, Id2 = 480 mA *
Freq GHz
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
37.0
0.410
0.434
0.452
0.467
0.475
0.482
0.482
0.481
0.461
0.434
0.405
0.349
0.297
0.222
0.149
0.099
0.046
0.030
0.038
0.059
0.098
0.156
0.208
0.254
0.288
0.285
0.259
0.225
0.219
0.257
0.329
0.413
0.498
-81.710
-93.190
-104.800
-116.600
-128.100
-139.600
-152.100
-164.900
-179.700
165.900
150.500
132.400
118.600
98.120
69.030
58.600
38.650
27.050
47.280
44.300
1.649
-13.690
-41.070
-71.050
-101.200
-132.700
-168.000
150.200
104.300
62.230
29.220
2.837
-18.060
0.990
1.205
1.471
1.834
2.302
2.914
3.663
4.598
5.734
6.986
8.255
9.319
10.110
10.730
10.920
10.950
10.810
10.640
10.380
10.310
10.260
10.110
9.906
9.260
8.301
7.117
5.761
4.472
3.475
2.650
2.007
1.598
1.243
168.300
153.600
137.900
121.100
102.900
83.870
62.800
40.410
15.480
-10.970
-38.850
-67.970
-97.180
-126.200
-154.800
177.500
150.600
124.000
98.700
73.570
47.280
19.540
-9.783
-40.220
-71.240
-102.800
-132.500
-159.600
175.700
152.200
129.900
108.600
89.070
0.003
0.005
0.005
0.006
0.005
0.007
0.004
0.007
0.004
0.003
0.006
0.001
0.015
0.009
0.007
0.011
0.024
0.020
0.017
0.013
0.018
0.014
0.018
0.019
0.019
0.016
0.012
0.002
0.005
0.013
0.006
0.008
0.007
109.000
47.230
106.000
10.540
61.560
15.130
-40.910
-31.630
-143.300
178.300
55.350
170.100
96.810
136.100
31.740
96.230
30.780
61.650
34.800
-6.347
-1.165
-54.310
-63.860
-73.260
-103.600
-110.000
-125.700
-100.100
76.730
85.790
-82.880
-25.430
169.300
0.926
0.899
0.890
0.854
0.826
0.769
0.716
0.632
0.525
0.429
0.314
0.207
0.155
0.131
0.084
0.077
0.060
0.061
0.060
0.092
0.169
0.200
0.322
0.432
0.533
0.661
0.746
0.805
0.836
0.846
0.853
0.868
0.880
63.210
54.830
45.830
35.520
24.650
12.660
-2.067
-18.150
-36.910
-58.840
-88.630
-121.900
-163.900
154.900
103.700
100.700
80.450
121.200
163.100
175.000
-171.700
-177.400
178.100
165.700
156.400
141.500
128.700
117.400
106.400
97.960
88.810
81.070
76.960
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Die Size and Bond Pad Locations (Not to Scale)
Revision: January 2016
X = 3650 µm  25 µm
Y = 2030  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 100 x 100  0.5 µm
Chip Thickness = 101  5 µm
3650 µm
VD2
GND
GND
VG2
VD1
GND
GND
VG1
761 µm
2161 µm
1561 µm
1161 µm
2030 µm
GND
RFIN
592 µm
GND
GND
RFOUT
GND
590 µm
Biasing/De-Biasing Details:
Listed below are some guidelines for GaN device testing and wire bonding:
a.
b.
c.
d.
Limit positive gate bias (G-S or G-D) to < 1V
Know your devices’ breakdown voltages
Use a power supply with both voltage and current limit.
With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i.
Apply negative gate voltage (-5 V) to ensure that all devices are off
ii.
Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i.
Gradually decrease drain bias to 0 V.
ii.
Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
APN229
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: January 2016
Suggested Bonding Arrangement
= 0.1uF, 50V (Shunt) [4]
= 0.1uF, 15V (Shunt)
= 0.01uF, 50V (Shunt)
= 0.01uF, 15V (Shunt)
= 100 pF, 50V (Shunt)
= 100 pF, 15V (Shunt)
VG2
[4]
= 10 Ohms, 30V (Series)
VD2
VD1
[4]
VG1
RF
Output
GND
RFIN
GND
VD2
GND
GND
VG2
VD1
GND
GND
VG1
RF
Input
GND
RFOUT
GND
Substrate
Substrate
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the
amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be
used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or
AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a
good RF path to ground. Maximum recommended temp during die attach is 320 oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up
tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS.
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 8
Approved for Public Release: Northrop Grumman Case 16-****, 01/**/16