Hardware
Documentation
A d v an c e I n fo r m at ion
®
HAL 2810
Linear Hall-Effect Sensor
with LIN Bus
Edition Nov. 21, 2007
AI000006_003EN
HAL2810
ADVANCE INFORMATION
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL2810
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Contents
Page
Section
Title
5
5
5
5
5
5
6
6
6
1.
1.1.
1.2.
1.3.
1.3.1.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Special Marking of Prototype Parts
Operating Temperature Range
Hall Sensor Package Codes
Solderability
Pin Connections and Short Description
7
7
8
9
10
11
13
14
15
16
2.
2.1.
2.2.
2.2.1.
2.2.2.
2.2.3.
2.3.
2.3.1.
2.3.2.
2.3.3.
Functional Description
General Function
Digital Signal Processing
Digital Filter
Temperature Compensation
DSP Configuration Registers
Calibration Procedure
Calibration over Temperature
Calibration at Constant Temperature
Calibration Disregarding the Temperature
17
17
17
17
18
18
18
18
19
19
19
19
20
20
20
22
22
22
22
22
22
3.
3.1.
3.1.1.
3.1.2.
3.2.
3.2.1.
3.2.2.
3.2.3.
3.2.4.
3.2.5.
3.3.
3.3.1.
3.3.2.
3.3.3.
3.3.4.
3.3.5.
3.3.6.
3.4.
3.4.1.
3.4.2.
3.5.
LIN Slave Module
Supported LIN Frames
Detected LIN Errors
Detected Signal Processing Errors
Unconditional Frames
Trigger Measurement
Trigger and Read
Set Address
Read 2 Bytes
Read 4 Bytes
Diagnostic and Configuration Frames
Go-to-Sleep-Command
Assign Frame Identifier
Read by Identifier
Assign NAD
Conditional Change NAD
Power Management
Physical LIN Interface
Suported LIN Baud Rates
Overcurrent Protection
LIN Product Identification
23
23
24
26
26
4.
4.1.
4.2.
4.3.
4.4.
Memory
Memory Map
Registers
Number Formats
Memory Protection
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Contents, continued
Page
Section
Title
26
27
29
30
4.4.1.
4.5.
4.6.
4.6.1.
Lockable Areas of EEPROM
EEPROM Memory
Programming of the EEPROM
EEPROM Safety
31
31
35
35
35
36
36
37
40
40
41
5.
5.1.
5.2.
5.3.
5.4.
5.4.1.
5.5.
5.6.
5.7.
5.8.
5.8.1.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Area
Absolute Maximum Ratings
Storage, Moisture Sensitivity Class, and Shelf Life
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics
Thermal Characteristics
Definition of Sensitivity Error ES
42
42
42
43
43
43
6.
6.1.
6.2.
6.3.
6.4.
6.5.
Application Notes
Operation Modes
Usage of Unconditional LIN Frames
Ambient Temperature
EMC and ESD
Application Circuit
44
7.
Data Sheet History
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HAL2810
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Linear Hall-Effect Sensor with LIN Bus
1.2. Features
Release Note: Revision bars indicate significant
changes to the previous edition.
– High precision linear Hall-effect sensor
– Spinning current offset compensation
– Digital signal processing
1. Introduction
– Over voltage protection at all pins
The HAL2810 is a member of the Micronas family of
programmable linear Hall-effect sensors. The device is
designed and manufactured in a sub-micron CMOS
technology.
– Multiple field programmable magnetic characteristics in a non-volatile memory with redundancy and
lock function
The HAL2810 features a temperature-compensated
Hall plate with spinning current offset compensation,
an A/D converter, digital signal processing, an
EEPROM memory with redundancy and lock function
for the calibration data, and protection devices at all
pins. The internal digital signal processing is of great
benefit because analog offsets, temperature shifts,
and mechanical stress do not degrade digital signals.
The sensor is designed as a LIN slave node according
to the LIN Specification Package Rev. 2.0. All communication (programming, diagnostics, measurement signal transport) is realized by the means of LIN frames.
– Programmable temperature compensation for sensitivity and offset
– LIN interface (slave node) according to LIN Specification Package Rev. 2.0.
– LIN physical layer
1.3. Marking Code
The HAL2810 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly.
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity as well as a first
order temperature coefficient of the sensor offset. This
enables operation over the full temperature range with
high accuracy.
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not to
be used for qualification tests or as production parts.
1.4. Operating Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ). The
HAL2810 is available in temperature range K:
K: TJ = −40 °C to +140 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 6.3.
on page 43.
1.1. Major Applications
As the sensor is designed as LIN slave node it can be
used in any kind of LIN cluster such as
– car body applications,
– car door modules,
– seat occupancy detection,
– seat position.
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1.5. Hall Sensor Package Codes
HALXXXXPA-T
Temperature Range: K
Package: UT for TO92UT -1/-2
Type: 2810
Example: HAL2810UT-K
→ Type: 2810
→ Package: TO92UT-1/-2
→ Temperature Range: TJ = −40 °C to +140 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Solderability is guaranteed for one year from the date
code on the package.
1.7. Pin Connections and Short Description
Pin No.
Pin Name
Type
1
VSUP
Supply Voltage
2
GND
Ground
3
DIO
IN/
OUT
Short Description
Digital IO
LIN Bus Interface
1 VSUP
3
DIO
2 GND
Fig. 1–1: Pin configuration
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2. Functional Description
The output signal is provided as unconditional LIN
frame (see Section 3.).
2.1. General Function
For the programming of the parameters of the DSP
and the configuration of the LIN slave module, the LIN
protocol is used.
The HAL2810 is a monolithic integrated circuit which
provides an output signal proportional to the magnetic
flux through the Hall plate.
Internal temperature compensation circuitry and the
spinning current offset compensation enables operation over the full temperature range with minimal
changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical
stress from the package.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers.
The HAL2810 provides non-volatile memory which is
divided in different blocks. The first block is used for
the configuration of the digital signal processing, the
second one is used by the LIN slave module. The nonvolatile memory employs inherent redundancy.
The function and the parameters for the DSP are
explained in Section 2.2. on page 8.
VSUP
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Temperature
Sensor
A/D
Converter
30k
LIN
Slave
Module
Protection
Devices
LIN
Transceiver
DIO
EEPROM Memory
Lock Control
GND
Fig. 2–1: HAL2810 block diagram
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2.2. Digital Signal Processing
y = [ y TCI + d ( TVAL ) ] ⋅ c ( TVAL )
Terminology:
D0:
name of the register or register value
d0:
name of the parameter
All parameters and the values y, yTCI are normalized to
the interval (−1, 1) which represents the full scale magnetic range as programmed in the RANGE register.
For the definition of the register values please refer to
Section 2.2.3. on page 11
The digital signal processing (DSP) is the major part of
the sensor and performs the signal conditioning. The
parameters of the DSP are stored in the DSP CONFIG
area of the EEPROM.
The device provides a digital temperature compensation. It consists of the internal temperature compensation, the customer temperature compensation, and an
offset and sensitivity adjustment. The internal temperature compensation (factory compensation) eliminates
the temperature drift of the Hall sensor itself. The customer temperature compensation is calculated after
the internal temperature drift has been compensated.
Thus, the customer has not to take care about the sensor’s internal temperature drift.
The output value y is calculated out of the factory-compensated Hall value yTCI as:
The signal path contains a digital low-pass filter of second order with a sampling frequency of 27.1 Hz or
54.3 Hz (see Section 2.2.1. on page 9).
The temperature compensation is calculated after a
new value has been delivered by the low pass filter.
The compensated Hall value can be read out either
from the sample and hold register or from the data register.
The current Hall value y is stored in the data register
HVD immediately after it has been temperature compensated. Following samples will overwrite the HVD
register. LIN response errors and double read Hall values will be marked.
A trigger command stores the most recent Hall value in
the sample and hold register HVSH. Following samples will be discarded up to the next trigger telegram.
LIN response errors and double read Hall values will
be marked. After power-up or wake-up, the registers
HVD, HVSH, and TVD are set to the negative overflow
value till valid data are available.
For details on the usage of the data output registers
HVD and HVSH, please refer to Section 6.1. on
page 42.
HAL2810
ΦB
A
IIR low pass
(2nd Order)
D
LIN
27.1 Hz
or 54.3 Hz
trigger
internal temp.
comp.
yTCI
custom. temp. offset & sens.
comp.
adjustm.
y
27.1 Hz
or 54.3 Hz
triggered hall value
e.g. 27.1 Hz
HVSH
current hall value
T (temp.)
e.g. 27.1 Hz
TVAL
A
HVD
D
Fig. 2–2: Block diagram of digital signal path including digital filter
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2.2.1. Digital Filter
The signal path contains a digital IIR low-pass filter of
second order with a sampling frequency of 27.1 Hz or
54.3 Hz. The sampling frequency can be set with the
FS register in the DSP CONFIG area of the EEPROM.
The filter combines a very constant gain at the pass
band and a high attenuation at the stop band.
Transfer function
Transfer function
5
0.2
fs = 27.1 Hz
fs = 27.1 Hz
0.1
0
0
-5
-0.1
-0.2
H(f) [dB]
H(f) [dB]
-10
-15
-0.3
-0.4
-20
-0.5
-25
-0.6
-30
-35
-0.7
0
10
20
30
40
50
f [Hz]
60
70
80
90
-0.8
100
0
1
2
3
4
5
f [Hz]
Fig. 2–3: Transfer function for fs = 27.1 Hz
Transfer function
Transfer function
5
0.2
fs = 54.3 Hz
fs = 54.3 Hz
0.1
0
0
-5
-0.1
-0.2
H(f) [dB]
H(f) [dB]
-10
-15
-0.3
-0.4
-20
-0.5
-25
-0.6
-30
-35
-0.7
0
10
20
30
40
50
f [Hz]
60
70
80
90
100
-0.8
0
1
2
3
4
5
f [Hz]
Fig. 2–4: Transfer function for fs = 54.3 Hz
Note: In order to minimize aliasing effects, the system
sampling frequency (determined by the LIN
master scheduling table) shall match the filter
sampling frequency (see Section 6.1. on
page 42).
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2.2.2. Temperature Compensation
TVAL
The customer programmable parameters c (Sensitivity) and d (Offset) are polynomials of the temperature.
The temperature is represented by the adjusted readout value TVAL of a built-in temperature sensor.
The number TVAL provides the adjusted value of the
built-in temperature sensor.
The update rate of the temperature value TVAL is less
than 100 ms.
TVAL is a 16-bit two’s complement binary ranging from
−32768 to 32767.
It is stored in the TVD register (see Section 4.2. on
page 24).
The Sensitivity polynomial c(TVAL) is of second order
in temperature:
c ( TVAL ) = c 0 + c 1 ⋅ TVAL + c 2 ⋅ TVAL
Note: The actual resolution of the temperature sensor
is 12 bit. The 16-bit representation avoids
rounding errors in the computation.
2
For the definition of the polynomial coefficients, please
refer to Section 2.2.3. on page 11.
The relation between TVAL and the junction temperature TJ is
T J = α 0 + TVAL ⋅ α 1
The Offset polynomial d(TADJ) is linear in temperature:
d ( TVAL ) = d 0 + d 1 ⋅ TVAL
For the definition of the polynomial coefficients, please
refer to Section 2.2.3. on page 11.
For the calibration procedure of the sensor in the system environment, the two values HVAL and TADJ are
provided. These values are stored in volatile registers.
Table 2–1: Relation between TJ and TADJ (typical
values)
Coefficient
Value
Unit
α0
71.65
°C
α1
1 / 231.56
°C
HVAL
The number HVAL represents the digital output value y
which is proportional to the applied magnetic field.
HVAL is a 12-bit two’s complement binary ranging from
−2048 to +2047.
It is stored in the HVD or HVSH register (see
Section 4.2. on page 24).
HVAL
y = ---------------2048
In case of internal overflows, the output will clamp to
the maximum or minimum HVAL value.
Please take care that during calibration, the output signal range does not reach the maximum/minimum
value.
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2.2.3. DSP Configuration Registers
D1 Register
This section describes the function of the DSP configuration registers. For details on the EEPROM please
refer to Section 4.5. on page 27.
Table 2–3: Linear temperature coefficient
Magnetic Range: RANGE
The RANGE register defines the mangetic range of the
A/D converter. The RANGE register has to be set
according to the applied magnetic field range.
Parameter
Range
Resolution
d1
−3.076 x 10−6 ... 3.028 x 10−6
7 bit
D1
−64 ... 63
D1 is encoded as two’s complement binary.
It can be varied between:
±20 mT and ±160 mT in steps of ±20 mT.
0.1008
–5
d 1 = ---------------- ⋅ D1 ⋅ 3.0518 ⋅ 10
64
For details see Section 4.5. on page 27.
Magnetic Sensitivity C
Sampling Frequency: FS
The FS register defines the sampling frequency of the
built in digital low-pass filter.
Two sampling frequencies can be selected: 27.1 Hz or
54.3 Hz
The C (Sensitivity) registers contain the parameters for
the multiplier in the DSP. The multiplication factor is a
second order polynomial of the temperature.
C0 Register
Table 2–4: Temperature independent coefficient
Magnetic Offset D
The D (Offset) registers contain the parameters for the
adder in the DSP. The added value is a first order polynomial of the temperature.
Parameter
Range
Resolution
c0
−2.0810 ... 2.2696
12 bit
C0
−2048 ... 2047
D0 Register
Table 2–2: Temperature independent coefficient
Parameter
Range
Resolution
d0
−0.5508 ... 0.5497
10 bit
D0
−512 ... 511
C0 is encoded as two’s complement binary:
2.1758
c 0 = ---------------- ⋅ ( C0 + 89.261 )
2048
D0 is encoded as two’s complement binary.
0.5508
d 0 = ---------------- ⋅ D0
512
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C1 Register
Table 2–5: Linear temperature coefficient
Parameter
Range
Resolution
c1
−7.955 x 10−6... 1.951 x 10−5
9 bit
C1
−256 ... 255
C1 is encoded as two’s complement binary.
0.4509
–5
c 1 = ---------------- ⋅ ( C1 + 108.0 ) ⋅ 3.0518 ⋅ 10
256
C2 Register
Table 2–6: Quadratic temperature coefficient
Parameter
Range
Resolution
c2
−1.87 x 10−10... 1.86 x 10−10
8 bit
C2
−128 ... 127
C2 is encoded as two’s complement binary.
0.2008
– 10
c 2 = ---------------- ⋅ C2 ⋅ 9.3132 ⋅ 10
128
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2.3. Calibration Procedure
Terminology:
In the following sections three approaches for twopoint calibration procedures are described.
– The complete calibration over temperature (see
Section 2.3.1.):
This procedure is used for the adoption of an application to the magnetic circuit including temperature
compensation.
– The calibration at constant temperature (see
Section 2.3.2.)
This procedure is used for the adoption of an application to the magnetic circuit when the temperature
compensation parameters are already known.
– The calibration disregarding the temperature (see
Section 2.3.3.)
This is the easiest way to calibrate the sensors and
may be the first approach for basic laboratory tests.
x1, 2:
Calibration points
xOFFS:
Offset position. For calibration points
symmetric to the offset position
xOFFS = (x1 + x2) / 2.
y1, 2 :
Hall output at the calibration points
yOFFS:
Hall output at offset position.
For calibration points symmetric to
the offset position
yOFFS = (y1 + y2 ) / 2
ys1, 2:
Hall output setpoints
(target values) at the calibration
points.
ysOFFS:
Offset setpoint. For calibration
points symmetric to the offset position
ysOFFS = (ys1 + ys2 ) / 2
TVAL:
Temperature sensor value.
T:
Temperature
1
ys2
c(T)
xOFFS
x1
x2
-1
1
ys1
-1
Fig. 2–5: Terminology
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2.3.1. Calibration over Temperature
Calculate the Offset Coefficients
The temperature dependence of the Hall sensor itself
is factory compensated to first order zero.
For each temperature TVAL the value fO(TVAL) shall
be calculated:
The calibration over temperature is intended to compensate for the temperature dependence of the magnetic circuit and the mechanics of the application.
f O ( TVAL ) = ys OFFS – y OFFS ( TVAL )
For most of the applications, it is sufficient to do the
calibration over temperature on typical samples and
determine a common set temperature coefficients.
The coefficients d0 and d1 can be obtained by a least
square fit:
fO ( TVAL ) = d 0.fit + d 1.fit ⋅ TVAL + ε
Measure Sensitivity and Offset over Temperature
The factory-compensated Hall value can be read out
when the Sensitivity and Offset registers are initialized
with defined values.
1. Initialize the Sensitivity and Offset registers to the
values below:
The best fitting coefficients d0.fit and d1.fit minimize
residual error ε.
The coefficients d0 and d1 have to be set to:
·
d 0 = d 0.fit
d0 = d1 = 0
c0 = 1
c1 = c2 = 0
d 1 = d 1.fit
Table 2–7: Initial parameter settings
Parameter
Value (dec)
D0 (d0 = 0)
0
D1 (d1 = 0)
0
C0 (c0 = 1)
852
C1 (c1 = 0)
−108
C2 (c2 = 0)
0
Calculate the Sensitivity Coefficients
For each temperature TVAL, the value fS(TVAL) must
be calculated:
ys 2 – ys1
f S ( TVAL ) = --------------------------------------------------------y 2 ( TVAL ) – y 1 ( TVAL )
The coefficients c0, c1, and c2 can be obtained by a
least square fit:
2. Get the digital output values at the calibration
points:
Move the system to x1 and read y1 then
move the system to x2 and read y2
3. Calculate the digital output value at the offset point:
2
fS ( TVAL ) = c 0.fit + c 1.fit ⋅ TVAL + c 2.fit ⋅ TVAL + ε
The best fitting coefficients c0.fit, c1.fit, and c2.fit,minimize residual error ε.
The coefficients c0 through c2 have to be set to:
x1 + x2
x OFFS = ---------------2
c 0 = c 0.fit
c 1 = c 1.fit
c 2 = c 2.fit
4. Get the temperature sensor value:
Read TVAL.
Do steps 2 ... 4 for at least three different temperatures
(evenly) distributed over the required temperature
range.
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2.3.2. Calibration at Constant Temperature
Calculate the Offset Coefficients
The calibration at constant temperature is intended to
do an individual adoption of the sensor to the magnetic
circuit when the temperature compensation parameters are already known.
In the following we consider the temperature value
TVAL to be constant:
ys OFFS – y OFFS
- + d0
d 0.new = ----------------------------------------------------( c 0 + c 1 ⋅ T 0 + c 2 ⋅ T 02 )
Calculate the Sensitivity Coefficients
The new Sensitivity coefficient c0.new can be calculated as:
TVAL = T 0
( ys 2 – ys 1 ) ⋅ ( c 0 + c 1 ⋅ T 0 + c 2 ⋅ T 02 )
c 0.new = ------------------------------------------------------------------------------------- – c 1 ⋅ T 0 – c 2 ⋅ T 02
( y2 – y1 )
Measure Sensitivity and Offset
The factory-compensated Hall value can be read out
when the Sensitivity and Offset registers are initialized
with defined values.
While c0 and d0 are set to new values c1, c2, and d1
will be kept.
1. Initialize the Sensitivity and Offset registers to the
values determined in the calibration over temperature (see Section 2.3.1.):
·
d ( T 0 ) = d 0 + d1 T 0
c ( T 0 ) = c 0 + c 1 T 0 + c 2 T 02
2. Get the digital output values at the calibration
points:
Move the system to x1 and read y1 then
move the system to x2 and read y2.
3. Calculate the digital output value at the offset point
x1 + x2
x OFFS = ---------------2
4. Get the temperature sensor value:
Read TVAL = T0.
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2.3.3. Calibration Disregarding the Temperature
Calculate the Offset Coefficients
The temperature dependence of the Hall sensor is factory compensated to first order zero.
The compensation for the temperature dependence of
the magnetic circuit and the mechanics of the application can be completely suppressed by setting the corresponding temperature coefficients to zero.
d 0.new = ys OFFS – y OFFS
Calculate the Sensitivity Coefficients
The new Sensitivity can be calculated as:
d1 = c1 = c2 = 0
ys 2 – ys1
c 0.new = --------------------- ⋅ c 0
y2 – y1
Measure Sensitivity and Offset
The factory-compensated Hall value can be read out
when the Sensitivity and Offset registers are initialized
with defined values.
1. Initialize the Sensitivity and Offset registers to the
values below.
d0 = d1 = 0
c0 = 1
c1 = c2 = 0
Table 2–8: Initial parameter settings
Parameter
Value (dec)
D0 (d0 = 0)
0
D1 (d1 = 0)
0
C0 (c0 = 1)
852
C1 (c1 = 0)
−108
C2 (c2 = 0)
0
2. Get the digital output values at the calibration
points:
Move the system to x1 and read y1 then
move the system to x2 and read y2
3. Calculate the digital output value at the offset point:
x1 + x2
x OFFS = ---------------2
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HAL2810
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3. LIN Slave Module
3.1.2. Detected Signal Processing Errors
The LIN Slave Module is designed according to the
LIN specification package rev. 2.0.
All communication (configuration, programming and
measurement signal transport) is realized by means of
LIN frames.
3.1. Supported LIN Frames
Table 3–1: Unconditional frames
Frame
# of Data
Bytes
Id
Name
Direction
1
Trigger
receive
2
2
Trigger and read
2 bytes
send
2
3
Set address
receive
3
4
Read 2 bytes
send
2
5
Read 4 bytes
send
4
– A positive overflow of the ADC or a positive overflow
within the calculation of the low pass filter or the
temperature compensation sets the Hall value
HVAL to +2047.
– A negative overflow of the ADC or a negative overflow within the calculation of the low pass filter or the
temperature compensation sets the Hall value
HVAL to −2048.
– A positive or negative overflow of the temperature
sensor ADC or a positive or negative overflow within
the calculation of the calibrated temperature value
TVAL sets the temperature value TVAL to −32768 or
+32767 and the Hall value HVAL to −2048.
Signal processing errors are stored in the status register SPE (see Section 4.2. on page 24).
Table 3–2: Diagnostic and configuration frames
Frame
# of Data
Bytes
PID
Name
Direction
60
Master request
receive
8
61
Slave response
send
8
Supported Master Requests
– Go-to-sleep-command
– Assign frame identifier
– Read by identifier
– Assign NAD
– Conditional change NAD
3.1.1. Detected LIN Errors
– framing
– data mismatch
– invalid checksum
Detailed information of occured LIN errors are stored
in the LIN status register (LINS) .
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3.2. Unconditional Frames
Prepare Data Access
In addition to the mandatory configuration frames, five
unconditional frames are implemented, which allow to
trigger the actual Hall sample and read/write accesses
to the internal memory. The access to critical memory
areas can be locked by the LIN driver or by the application. Once the address to read is defined, fast cyclic
read accesses can be performed.
With W/nR = “0” the 15-bit address for “read bytes”
frame (message id 4 or 5) are prepared.
3.2.1. Trigger Measurement
Table 3–5: Data bytes of the “prepare data access”
frame
1. Byte
2. Byte
3. Byte
A[0:7]
(address
low byte)
A[8:14],0
(address
high byte, control bit)
0x00
The reception of this frame saves the actual Hall value
in the sample and hold register HVSH.
Table 3–3: Data bytes of trigger frame
1. Byte
Write Byte
2. Byte
With W/nR = “1” the content of the third data byte of
the frame is written into the 15-bit address, defined by
the 15 least significant bits of the first two data bytes
(see Table 3–6).
content delivered by a another slave
Table 3–6: Data bytes of the “write byte” frame
3.2.2. Trigger and Read
The reception of this frame saves the actual Hall value
in the sample and hold register HVSH and sends the
content of the effective address to the master.
Table 3–4: Data bytes of trigger and read frame
1. Byte
2. Byte
content of effective
address
content of effective
address +1
1. Byte
2. Byte
3. Byte
A[0:7]
(address
low byte)
A[8:14],1
(address
high byte, control bit)
D[0:7]
(data byte)
Special cases:
– In case of a write protected address the “write byte”
command is discarded.
Note: After reset, the device does not respond to a
“trigger and read” command until a valid
address has been set via a “set address” frame.
Micronas recommends to periodically send a
“set address” frame .
– While the EEPROM is being programmed the
reception of “write byte” frames is blocked.
3.2.3. Set Address
The “set address” frame functions as preparation for a
data access or as “write byte” command. The first two
data bytes build a 15-bit address, low byte first, and a
control bit, which is the most significant bit of the second byte. The W/nR1)-control bit defines if the frame is
used to set an address for further read accesses or as
write command.
1) W/nR: write not read
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3.2.4. Read 2 Bytes
3.3. Diagnostic and Configuration Frames
The byte out of the effective address, defined with a
“set address” frame before, and the byte out of the
next higher address (effective addr. +1) are transmitted
(see Table 3–7).
Apart from the special diagnostic “go-to-sleep-command” frame, the implemented configuration frames
serve to identify connected nodes. In case of several
identical LIN slave devices connected to the same
cluster, it is necessary to assign an individual NAD to
each LIN slave device. Individual internal serial numbers are used to differ the connected nodes.
Table 3–7: Data bytes of the “read 2 bytes” frame
1. Byte
2. Byte
content of address
content of address +1
After reset the device does not respond to a “read 2
bytes” command until a valid address has been set via
a “set address” frame. Micronas recommends to periodically send a “set address” frame .
The frames “read by identifier” and “conditional change
NAD” allow to separately assign a NAD to each LIN
slave device. The algorithm is as follows:
1. Conditionally change NAD (initNAD, 1 bit of serial
number enabled, new NAD)
2. Read by identifier (new NAD)
– No answer: Toggle bit and try again.
– One answer: Slave found, store NAD, invert bit and
enable an additional bit.
3.2.5. Read 4 Bytes
– Collision: Enable an additional bit.
The address, defined with a “set address” frame
before and three next higher addresses (addr. +1,
addr. +2 and addr. +3) are transmitted (see Table 3–8).
Table 3–8: Data bytes of the “read 4 bytes” frame
1. Byte
2. Byte
3. Byte
4. Byte
content of
address
content of
address +1
content of
address +2
content of
address +3
After reset the device does not respond to a “read 4
bytes” command until a valid address has been set via
a “set address” frame. Micronas recommends to periodically send a “set address” frame .
The EEPROM RAM-layer is enabled automatically
when a LIN configuration frame (PCI = 6) is received.
This allows to modify the NAD and the frame identifiers
of an unconfigured sensor.
In order to store the new configuration permanently the
EEPROM has to be programmed.
Note: After finishing the LIN configuration, the RAM
layer has to be disabled manually using unconditional frames.
3.3.1. Go-to-Sleep-Command
After reception, the device enters the sleep mode.
While programming the EEPROM the go-to-sleepcommand is disabled.
Table 3–9: Data bytes of the “go-to-sleep-command”
frame (PID = 60)
Data Bytes
1.
2.
3.
4.
5.
6.
7.
8.
0x00 0xFF 0xFF 0xFF 0xFF 0xFF 0xFF 0xFF
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Table 3–12: Data bytes of the “read by identifier”
request (PID = 60)
Sets the protected identifier to a frame specified by its
message identifier. It is structured as shown in
Table 3–10.
Data Bytes
3.
4.
5.
6.
7.
8.
SID
D1
D2
D3
D4
D5
NAD 0x06 0xB1 0x41 0x00
Message ID
high byte
NAD PCI
4.
5.
6.
7.
8.
SID
D1
D2
D3
D4
D5
NAD 0x06 0xB2
Message ID
low byte
2.
3.
PID
The request provides the protected identifier (PID), i.e.
the identifier and its parity. Frames with identifier 60
(0x3C) and up can not be changed (diagnostic frames,
user defined frames and reserved frames). A response
as shown in Table 3–11 is sent only, if the NAD and the
supplier ID match.
0x41 0x00
Function ID
high byte
NAD PCI
Data Bytes
1.
2.
Function ID
low byte
1.
Table 3–10: Data bytes of the “assign frame id”
request (PID = 60)
identifier
3.3.2. Assign Frame Identifier
Table 3–13: Identifiers that may be read using the
“read by identifier” request
Identifier
Interpretation
0
LIN product identification
1
Serial number
16 - 20
Message ids 1 ... 5
Table 3–11: Data bytes of the positive “assign frame
id” response (PID = 61)
Data Bytes
1.
2.
NAD PCI
3.
4.
RSID
5.
6.
7.
8.
unused
NAD 0x01 0xF1 0xFF 0xFF 0xFF 0xFF 0xFF
3.3.3. Read by Identifier
To read the product identification, serial no. or a message id, the request in Table 3–12 is used. Supported
identifiers are listed in Table 3–13.
A response as shown in Table 3–14 is sent only, if the
NAD, the supplier and the function ID match.
If the requested identifier is not supported, the negative response as shown in Table 3–15 is sent.
3.3.4. Assign NAD
To solve node address conflicts an assign NAD
request as shown in Table 3–16 is supported.
A response as shown in Table 3–17 is sent only if the
NAD, the supplier and function ID match.
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Table 3–14: Data bytes of positive “read by id” responses (PID = 61)
for
id
Data Bytes
1.
2.
3.
4.
5.
6.
7.
8.
NAD
PCI
RSID
D1
D2
D3
D4
D5
0x06
0xF2
0
NAD
0x41
0x00
Function ID
low byte
Function ID
high byte
Variant
0xFF
1
0x05
Serial 0, LSB
Serial 1
Serial 2
Serial 3, MSB
16
0x04
Message ID 1
low byte
Message ID 1
high byte
Protected ID (or
0xFF)
0xFF
17
Message ID 2
low byte
Message ID 2
high byte
18
Message ID 3
low byte
Message ID 3
high byte
19
Message ID 4
low byte
Message ID 4
high byte
20
Message ID 5
low byte
Message ID 5
high byte
Table 3–15: Data bytes of the negative “read by id”
response (PID = 61)
Table 3–17: Data bytes of the positive “assign NAD”
response (PID =61)
Data Bytes
NAD PCI
3.
4.
RSID D1
NAD 0x03 0x7F
5.
6.
D2
error code
(= 0x12)
2.
requested SID
(=0xB2)
1.
Data Bytes
7.
8.
unused
1.
2.
NAD PCI
0xFF 0xFF 0xFF
3.
RSID
4.
5.
6.
7.
8.
unused
0x01 0x01 0xF0 0xFF 0xFF 0xFF 0xFF 0xFF
(initial
NAD
Table 3–16: Data bytes of the “assign NAD” request
(PID =60)
Data Bytes
5.
6.
7.
8.
SID
D1
D2
D3
D4
D5
0x01 0x06 0xB0
(initial
NAD)
Micronas
Function ID
high byte
4.
Function ID
low byte
NAD PCI
3.
Supplier ID
high byte
2.
Supplier ID
low byte
1.
New
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3.3.5. Conditional Change NAD
3.4. Physical LIN Interface
The conditional change NAD is used e.g. to detect and
separate identical slave nodes which differ by its serial
numbers only (see Fig. 3–18).
3.4.1. Suported LIN Baud Rates
Table 3–18: Data bytes of the “conditional change
NAD” request (PID =60)
Data Bytes
1.
2.
3.
4.
5.
6.
7.
8.
NAD
PCI
SID
D1
D2
D3
D4
D5
NAD
0x06
0xB3
identi Byte
fier
Mask Invert New
NAD
The HAL2810 supports two configurable LIN baud
rates:
Table 3–20: LIN baud rates
LBR
Baud Rate [kBps]
6
20
3
10.4
The LIN baud rate is set using the LBR bits in the
EEPROM memory (see Section 4.5. on page 27).
The request is applied as follows:
– Select an identifier as supported by the “read by
identifier” request (ref. to Table 3–13).
Note: After programming the LBR in the EERPOM,
after “disable RAM-layer”, the device resets and
starts up with the new LIN baud rate.
Extract the data byte selected by Byte (Byte = 1 corresponds to the first byte, D1).
1. Do a bitwise XOR with Invert.
3.4.2. Overcurrent Protection
2. Do a bitwise AND with Mask.
In case of an overcurrent on the DIO pin the transmit
transistor is switched off (high impedance). The transistor is re-enabled before transmitting a new data
byte.
3. If the final result is zero, change the (current) NAD
to New NAD.
If the NAD could be changed the response as shown
in Table 3–19 is generated.
3.5. LIN Product Identification
Table 3–19: Data bytes of the positive “conditional
change NAD” response (PID =61)
Data Bytes
1.
2.
NAD PCI
3.
4.
RSID
5.
6.
7.
8.
The LIN product identification consists of the supplier
ID, a function ID, and a variant ID.
The product identification for the HAL2810 version C1
is listed in Table 3–21 below.
Table 3–21: LIN product identification
unused
NAD 0x01 0xF3 0xFF 0xFF 0xFF 0xFF 0xFF
3.3.6. Power Management
For power management there are two ways to enter a
sleep mode:
ID
Size
[bit]
Value
Supplier ID
16
0x0041 (Micronas)
Function ID
16
0x020C
Variant ID
8
0...255
used for manufacturer purposes
– via the LIN “go-to-sleep” request
– after typ. 4 sec. of bus inactivity
A dominant pulse on the LIN bus initiates a wake-up of
the device.
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4. Memory
4.1. Memory Map
The access to most memory areas is prohibited. See
Table 4–1 for permitted address areas.
A write telegram to a write protected address is discarded.
In case of a read telegram to a read protected (prohibited) address the sensor responds with dummy data:
– 0xFFFF in case of “trigger and read”, “read 2 bytes”
– 0xFFFF FFFF in case of “read 4 bytes”
Table 4–1: Permitted access
Address
Base
Offset
0x3000
0xC0
Address
Range
[byte]
Access
Content
Read
Write
x
x
reserved
0x80
x
x
EEPROM, customer lockable area 1 (COM CONFIG)
0x40
x
x
EEPROM, customer lockable area 0 (DSP CONFIG)
0x00
x
−
EEPROM, Manufacturer lockable area (MICRONAS CONFIG)
256
0x2FC0
0x00
64
x
x
Protected Address Area
0x20B4
0x00
1
x
x
EEPCTRL
0x0000
0x07
8
x
x
LINS
0x06
x
x
SPE
0x04
x
−
TVD
0x02
x
−
HVD
0x00
x
−
HVSH
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TVAL
4.2. Registers
Temperature Value
TVAL is the adjusted temperature value.
It is a two’s complement binary
ranging from −32768 to +32767.
The minimum and maximum value
is used for denoting overflows.
Initial values (Init) are set after a reset.
HVD
r
Hall Value Data Register
15
14
LRE
RDBL
reserved
HVAL
0
0
0
-2048
HVAL
13
12
11
...
1
0
SPE
Init
Hall Value
HVAL is the temperature compensated
Hall value.
It is a two’s complement binary ranging
from −2048 to +2047. The minimum and
maximum value is used for denoting
overflows and errors within the
signal path
RDBL
1:
0:
Read Double
Sample was already read.
Sample was not read before.
LRE
1:
LIN Response Error
A LIN protocol error (response error)
has been detected.
No error.
0:
HVSH
r
Hall Value S/H Register
15
14
LRE
RDBL
reserved
HVAL
0
0
0
-2048
HVAL
13
12
11
...
1
0
Init
Hall Value
HVAL is the temperature compensated
Hall value.
It is a two’s complement binary ranging
from −2048 to +2047. The minimum and
maximum value is used for denoting
overflows and errors within the
signal path.
RDBL
1:
0:
Read Double
Sample was already read.
Sample was not read before.
LRE
1:
LIN Response Error
A LIN protocol error (response error)
has been detected.
No error.
0:
TVD
15
r
7
r/w
6
reserved
0
0
5
4
3
2
1
0
HVT
TCO
LPO
HAO
TVO
TAO
0
0
0
0
0
0
Init
TAO
1:
0:
Temperature Sensor ADC Overflow
An overflow has occurred.
No error
TVO
1:
0:
TVAL Calculation Overflow
An overflow has occurred.
No error
HAO
1:
0:
Hall ADC Overflow
An overflow has occurred.
No error
LPO
1:
0:
Low Pass Filter Overflow
An overflow has occurred.
No error
TCO
1:
0:
Temperature Compensation Overflow
An overflow has occurred.
No error
HVT
1:
0:
Hall Value Calculation Timeout
A timeout has occurred.
No error
The error flags of the Signal Path Error Register are
persistent. The customer can reset the error flags by
write access.
Temperature Value Data Register
14
13
...
3
2
1
0
TVAL
-32768
24
Signal Path Error Register
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LINS
r/w
For the programming of the non-volatile memory, the
EEPCTRL register is provided.
LIN Status Register
7
6
5
STUP
OTR
OVR
1
0
0
4
3
reserved
0
0
2
1
0
CSE
DM
FE
0
0
0
EEPCTRL
Init
7
EEPROM Control
6
5
4
3
2
1
ERR
x
x
SET
EE5V
LTCH
1
x
x
0
0
0
0
FE
1:
0:
Frame Error
A frame error has occurred.
No error
DM
1:
EEPEN
EEPROM Enable Flag
Enables the EEPROM for further
set or clear access.
0:
Data Mismatch Error
A data mismatch error has occurred.
Mismatch between the logic state of a
transmission bit and the logic level on the
LIN bus.
No error
ERR
1:
0:
Error Flag
Programming error.
No error.
CSE
1:
0:
Checksum Error
A checksum error has occurred.
No error
SET
1:
0:
Set / Clear Flag
Set EEPROM cells
Clear EEPROM cells
OVR
1:
0:
Overvoltage Reset
An overvoltage reset has occurred.
No overvoltage reset has occurred.
EE5V
1:
0:
EE5V Flag
Set EE5V flag
ClearEE5V flag.
OTR
1:
0:
Overtemperature Rest
An overtemperature reset has occurred.
No overtemperature reset has occurred.
LTCH
1:
0:
LTCH Flag
Set LTCH flag.
Clear LTCH flag.
STUP
1:
0:
Startup
A reset has occurred.
No reset has occurred.
EEOUT
1:
0:
EEPROM Out Flag
Set EEPROM out flag.
Clear EEPROM out flag.
r/w EEPEN
x
EEOUT 0
1
Res
The error flags of the LIN Status Register are persistent. The customer can reset the error flags by write
access.
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4.3. Number Formats
4.4. Memory Protection
Two’s-complement:
4.4.1. Lockable Areas of EEPROM
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
The EEPROM memory contains three independently
lockable areas.
Example:
0101001 represents +41 decimal
1010111 represents −41 decimal
Setting a lock bit prevents further changes in the corresponding area. The contents of the customer lockable
areas and parts of the manufacturer lockable area can
be read out.
For details on programming and locking the EERPOM
memory, please refer to Section 4.6. on page 29
Table 4–2: EEPROM lockable areas
Area
Content
COM
CONFIG
(Customer 1
Area)
Customer lock bit C1LOC
DSP
CONFIG
(Customer 0
Area)
Customer lock bit C0LOC
MICRONAS
CONFIG
Manufacturer lock bit MLOC
LIN network management and configuration parameters
Signal path and Hall ADC parameters
Signal path, temperature adjustment parameters and serial number
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4.5. EEPROM Memory
Table 4–3: EEPROM content
Area
Offset
Addr.
Bit
COM CONFIG
7
6
5
Remark
4
0x8B
3
2
1
0
UCD [11:4]
0x8A
UCD: unassigned customer data
UCD [3:0]
0x89
res.
reserved for future usage
0x88
DSP CONFIG
0x87
0x86
PID5
0x85
PID4
0x84
PID3
0x83
PID2
0x82
PID1
0x81
NAD
0x80
res.
0x47
res.
0x46
res.
LBR
0
res.
RANGE
res.
D0 [9:8]
0x44
D0 [7:0]
0x43
C2
0x42
C1 [8:1]
0x40
C1 [0]
C1LOC
D1
0x45
0x41
MICRONAS CONFIG
FS
Protected Identifiers
res.
Parameters D1, D0, C2, ..., C0:
Stored as two’s complement
binary.
C0 [11:7]
C0 [6:0]
0x11
SN [31:24]
0x10
SN [23:16]
0x0F
SN [15:8]
0x0E
SN [7:0]
0x0D
C0LOC
LIN serial number
(read only)
Factory settings
(read only)
...
0x00
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ADVANCE INFORMATION
Unassigned Customer Data
Free usable by customer.
PID5 to PID1 Protected Identifier
(see Section 3. on page 17)
NAD
Node Address for Diagnostics
(see Section 3. on page 17)
LBR
3:
6:
LIN Baud rate
10.4 kBaud
20.0 kBaud
FS
1:
0:
Sample Frequency (of Low-Pass Filter)
54.3 Hz
27.1 Hz
RANGE
0:
1:
2:
3:
4:
5:
6:
7:
Range Register
−20 mT ... 20 mT
−40 mT ... 40 mT
−60 mT ... 60 mT
−80 mT ... 80 mT
−100 mT ... 100 mT
−120 mT ... 120 mT
−140 mT ... 140 mT
−160 mT ... 160 mT
C2 to C0
Temperature Coefficients C
(see Section 2.2.2. on page 10)
D1, D0
Temperature Coefficients D
(see Section 2.2.2. on page 10)
SN
LIN Serial Number
(see Section 3. on page 17)
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4.6. Programming of the EEPROM
Table 4–4: Programming sequence
For all EEPROM registers exist corresponding RAM
registers. A write data command always acts on the
RAM register.
The EEPROM RAM layer has to be enabled before
writing. If the EEPROM RAM layer is disabled, a write
access to the EEPROM is not possible.
There is no LIN command dedicated to the programming of the EEPROM. Instead, a special EEPROM
control register EEPCTRL is provided.
Step
#
6
CLEAR
Wait at least 15 ms
8
Read register EEPCTRL
and check the flag ERR.
If ERR is set repeat the
whole programming
sequence from step #0.
9
While CLEAR and SET are executed any write access
to the memory as well as the LIN go-to-sleep command are blocked.
SET
Wait at least 15 ms.
11
Read register EEPCTRL
and check the flag ERR.
If ERR is set repeat the
whole programming
sequence from step #0.
12
Check
RAM Layer
Content
Read and verify the complete EEPROM content
13
Check LIN Status Register
In case of a LIN communication error repeat
the whole programming sequence from
step #0
14
Disable
RAM Layer1)
Write 0x01 to register
EEPCTRL (0x20B4)
15
Check EEPROM
Content
Read and verify the
EEPROM content.
Action
#
0
Reset LIN Status Register
Write 0x00 to register
LINS
1
Enable
RAM Layer
Write 0x02 to register
EEPCTRL (0x20B4)
2
Write EEPROM
Data
Modify the content of the
EEPROM (RAM layer)
3
Enable Programming
Sequence
Write 0x7E
to protected address:
0x2FCF
4
5
Write 0xE2 to protected
address:
0x2FD8
Write 0x8E to register
EEPCTRL (0x20B4)
10
Table 4–4: Programming sequence
Step
Write 0x86 to register
EEPCTRL (0x20B4)
7
In order to store data from the EEPROM RAM layer to
the EEPROM layer, the programming sequence
shown in Table 4–4 has to be carried out.
Please take care that every write command in the
enable programming sequence is sent only once and
in the right order.
Action
1)
In case of data mismatch
repeat the whole programming sequence from
step #1.
Alternatively, reset the device via power-on cycle
or LIN send-to-sleep command.
Write 0x5B to protected
address:
0x2FC6
Note: In order to safely detect programming errors, it
is mandatory to read back the EEPCTRL register (items 8 and 11).
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HAL2810
ADVANCE INFORMATION
4.6.1. EEPROM Safety
Setting a Lock Bit
The EEPROM cells employ full redundancy. This
ensures EEPROM data retention over device life time.
A lock bit directly affects the sensor hardware:
When calibrating the sensor or configuring the LIN
interface the customer has to take care that the
EEPROM cells are programmed correctly.
1. Any further write access to the corresponding
EEPROM area is blocked.
2. The EEPROM cells are permanently connected to
their RAM layer.
The “clear” and “set” procedures act on the complete
unlocked EEPROM simultaneously. In order to program multiple registers a single programming
sequence after writing all relevant registers is sufficient
(see Table 4–4 on page 29) .
If the lock bit C0LOC is not set the configuration of the
DSP may be controlled by the data stored in the RAM
layer only. The customer must verify and (if necessary)
refresh the configuration data periodically.
For programming the device it must be operated within
the recommended operating conditions range.
Note: It is mandatory to lock the DSP CONIFIG
EEPROM when the sensors are used for qualification tests and in field applications.
Programming a EEPROM Register
Take care that the programming sequence is not disturbed or interrupted.
If the lock bit C1LOC is not set the configuration of the
LIN bus may be controlled by the data stored in the
RAM layer only. The customer must verify and (if necessary) refresh the configuration data periodically.
If programming errors persist appropriate measures
have to be taken.
– Any interrupt of the programming sequence may
result in incomplete set or cleared EEPROM cells
and may lead to unpredictable behaviour of the
device.
– Please take precautions against electrostatic discharges (ESD). The occurence of electrostatic discharges while the EEPROM is programmed may
lead to an interrupt of the programming sequence.
Note: Micronas recommends to lock the COM CONFIG area when the sensors are used for qualification tests and in field applications.
The lock bit does not restrict the read access to the
memory. Any permitted address (see Table 4–1 on
page 23) can be read independent of the lock bit.
– Before setting a lock bit (C0LOC or C1LOC) verify
the register contents of the corresponding EEPROM
area.
– Check for the effectiveness of the lock bit after locking. This can be done by a write attempt to one of
the EEPROM registers.
Note: The lock mechanism gets active with the next
reset after setting the lock bit. Once the lock
mechanism is active the corresponding
EEPROM area cannot be reprogrammed. In
particular the lock bits C0LOC, C1LOC, MLOC
cannot be cleared.
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HAL2810
ADVANCE INFORMATION
5. Specifications
5.1. Outline Dimensions
Fig. 5–1:
TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
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HAL2810
ADVANCE INFORMATION
Fig. 5–2:
TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread
Weight approximately 0.12 g
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HAL2810
ADVANCE INFORMATION
Fig. 5–3:
TO92UA/UT: Dimensions ammopack inline, spread
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HAL2810
ADVANCE INFORMATION
Fig. 5–4:
TO92UA/UT: Dimensions ammopack inline, not spread
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HAL2810
ADVANCE INFORMATION
5.2. Dimensions of Sensitive Area
0.213 mm x 0.213 mm
5.3. Positions of Sensitive Area
TO92UT-1/2
x
center of the package
y
1.5 mm nominal
Bd
0.3 mm
A4
0.4 mm
5.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
TJ
Junction Operating Temperature
−
−40
170 1)
°C
TS
Storage Temperature
−
−40
170
°C
VSUP
Supply Voltage
VSUP
−18
26.5
40 2)
V
V
VDIO
Bus IO Voltage
DIO
−18
26.5
V
IDIO
Bus IO Current
DIO
−
200
mA
1)
t
2)
< 1000 h
t < 500 ms, with RV = 47 Ω
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HAL2810
ADVANCE INFORMATION
5.4.1. Storage, Moisture Sensitivity Class, and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
5.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
TJ
Junction Operating Temperature
−
−40
140
°C
VSUP
Supply Voltage
VSUP
7
18
V
VBUS
Output Voltage
DIO
−2
18
V
IBUSdom
Continuous Output Current
DIO
−
40
mA
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Remarks
LIN dominant state
Micronas
HAL2810
ADVANCE INFORMATION
5.6. Electrical Characteristics
at Recommended Operating Conditions if not otherwise specified in the column “Test Conditions”,
TJ = −40 °C to +140 °C, VDD = 7 V to 18 V, after programming the sensor and locking the DSP CONFIG EEPROM.
Typical Characteristics for TA = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin Name
Min.
Typ.
Max.
Unit
Test Conditions
VRVP
Voltage Drop in Reverse
Voltage Protection Structure
VSUP
−
0.25
−
V
ISUP
Supply Current
VSUP
−
10
20
mA
ISUP_slp
Supply Current in SLEEP
Mode
VSUP
−
150
300
µA
VSUP = 14 V
TA = 25 °C
VSUPZ
Over Voltage Protection at
Supply
VSUP
−
35
−
V
ISUP = 25 mA, t = 20 ms,
TA = 25 °C
IDIOH
Output Leakage Current
DIO
−
−
10
μA
Digital I/O (DIO) Pin
RSLAVE
Internal Pull-up Resistance at
Output
DIO
20
30
60
kΩ
VSerDiode
Voltage Drop at the Serial
Diode in the Pull Up Path
DIO
0.4
0.7
1.0
V
IDIO_LIM
Current Limitation for Driver
Dominant State
DIO
40
200
mA
VBUS = VBAT_max
Driver on
IDIO_PAS_do
Input Leakage Current at the
Receiver Inclusive Pull-up
Resistor as Specified.
DIO
−1
mA
VBUS = 0 V
VBAT = 12 V
Driver off
IDIO_PAS_rec
Leakage Current at the
Receiver Inclusive Pull-up
Resistor as Specified.
DIO
20
μA
8 V < VBUS < 18 V
8 V < VBAT < 18 V
VBUS ≥ VBAT
IDIO_NO_GN
Leakage Current at Ground
Loss.
DIO
1
mA
VSUP = GND
0 V < VBUS < 18 V
VBAT =12 V
IDIO_NO_BAT
Leakage Current at VSUP
Loss.
DIO
100
μA
GND = VSUP
0 V < VBUS < 18 V
VBAT =disconnected
VDIOdom
Receiver Dominant State
DIO
0.4
VSUP
Without external diode
VDIOrec
Receiver Recessive State
DIO
0.6
VDIO_CNT
Center of Receiver Threshold
DIO
0.475
0.525
VSUP
VDIO_CNT =
(Vth_dom + Vth_rec) / 2
VHYS
Hysteresis of Receiver
Threshold
DIO
0.03
0.175
VSUP
VHYS = Vth_rec − Vth_dom
m
D
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VSUP
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HAL2810
Symbol
Parameter
ADVANCE INFORMATION
Pin Name
Min.
Typ.
Max.
Unit
Test Conditions
LIN Driver, 20.0 kbps (tBit = 50 μs), SLEW = 1, Bus load conditions (CBUS; RBUS): 1 nF; 1 kΩ / 6.8 nF; 660 Ω / 10 nF; 500 Ω
D1
Duty Cycle 1
0.396
THREC(max) =
0.744 x VSUP;
THDOM(max) =
0.581 x VSUP;
VSUP = 7.0 V to 18 V;
D1 = tBus_rec(min) / (2 x tBit)
D2
Duty Cycle 2
0.581
THREC(min) =
0.422 x VSUP;
THDOM(min) =
0.284 x VSUP;
VSUP = 7.6 V to 18 V;
D2 = tBus_rec(max) / (2 x tBit)
LIN Driver, 10.4 kbps (tBit = 96 μs), SLEW = 0, Bus load conditions (CBUS; RBUS): 1 nF; 1kΩ / 6.8 nF; 660 Ω / 10 nF; 500 Ω
D3
Duty Cycle 3
0.417
THREC(max) = 0.778 x VSUP;
THDOM(max) = 0.616 x VSUP;
VSUP = 7.0 V to 18 V;
D3 = tBus_rec(min) / (2 x tBit)
D4
Duty Cycle 4
0.590
THREC(min) = 0.389 x VSUP;
THDOM(min) = 0.251 x VSUP;
VSUP = 7.6 V to 18 V;
D4 = tBus_rec(max) / (2 x tBit)
LIN Receiver
trx_pd
Receiver Propagation Delay
trx_sym
Receiver Propagation Delay
Symmetry
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6
μs
trx_pd = max(trx_pdr, trx_pdf)
2
μs
trx_sym = trx_pdr - trx_pdf
Micronas
HAL2810
ADVANCE INFORMATION
THREC(max)
THDOM(max)
THDOM(max)
THREC(min)
THDOM(min)
THDOM(min)
tBus_dom(max)
tBus_rec(min)
trx_pdr
tBus_dom(min)
tBus_rec(max)
trx_pdf
receive output
of node 1
receive output
of node 2
Fig. 5–5: Definition of LIN transceiver characteristics
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5.7. Magnetic Characteristics
at Recommended Operating Conditions if not otherwise specified in the column “Test Conditions”,
TJ = −40 °C to +140 °C, VSUP = 7 V to 18 V, after programming the sensor and locking the DSP CONFIG EEPROM.
Typical Characteristics for TA = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin Name
Min.
Typ.
Max.
Unit
Test Conditions
−
Resolution Of Measurement
Data
DIO
−
12
−
bit
tresp
Step Response Time
DIO
−
40
−
ms
Filter 27.1 Hz
−
20
−
ms
Filter 54.3 Hz
RANGEABS
Absolute Magnetic Range Of
A/D Converter
−
85
100
115
%
% of nominal RANGE
INL
Non-linearity
DIO
−0.25
0
0.25
%
% of full-scale
ES
Sensitivity Error over
Temperature Range
DIO
−3
0
3
%
(see Section 5.8.1.)
BOFFSET
Magnetic Offset
DIO
−0.5
0
0.5
mT
B = 0 mT, TA = 25 °C
RANGE 80 mT
ΔBOFFSET
Magnetic Offset Drift over
Temperature Range
BOFFSET(T) - BOFFSET(25 °C)
DIO
−0.5
0
0.5
mT
B = 0 mT
RANGE 80 mT
5.8. Thermal Characteristics
at Recommended Operating Conditions if not otherwise specified in the column “Test Conditions”,
TJ = −40 °C to +140 °C, VSUP = 7 V to 18 V
Symbol
Parameter
Pin Name
Max.
Unit
Test Conditions
TO92UT Package
Thermal Resistance
−
Rthja
Junction to Ambient
235
K/W
measured on 1s0p board
Rthjc
Junction to Case
61
K/W
measured on 1s0p board
Rthjs
Junction to Solder Point
128
K/W
measured on 1s1p board
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ADVANCE INFORMATION
5.8.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of 1 minus
the quotient of the normalized measured value1) over
the normalized ideal linear2) value:
meas
ES = max ⎛ abs ⎛ ------------ – 1⎞ ⎞
⎝ ⎝ ideal
⎠⎠
[ Tmin, Tmax ]
In the example shown in Fig. 5–6, the maximum error
occurs at −10 °C:
1.001
ES = ------------- – 1 = 0.9%
0.992
1) normalized to achieve a least-square-fit straight-line
that has a value of 1 at 25 °C
2) normalized to achieve a value of 1 at 25 °C
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1.02
1.01
1.001
1.00
0.992
0.99
0.98
–50
–25
-10
0
25
50
75 100
temperature [°C]
125
150
175
Fig. 5–6: Definition of Sensitivity Error ES
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HAL2810
ADVANCE INFORMATION
6. Application Notes
6.1. Operation Modes
In a typical LIN application the LIN master will sample
the Hall-values periodically. The timing and therefore
the sample rate are defined in the master’s schedule
table.
The HAL2810 provides Hall values with its own specific sample rate which is determined by the sensor’s
clock frequency and the sample rate of the built-in digital filter.
The sample rate of the LIN master and the sensor may
differ significantly. In this case some Hall samples may
get lost or they may be read double. Both cases will
cause aliasing effects.
This section describes four recommended operation
modes which minimizes or eliminates those aliasing
effects.
sors. The master reads continuously each connected
sensor. Due of the different clock frequencies some
samples will be lost and some will be read twice. The
resulting aliasing effetcs are low if the LIN frame period
is equal to the nominal sample period of the sensors.
In the third and fourth mode, the LIN frame frequency
has to be at least as high as the fastest sensor. The
master reads continuously each connected sensor and
analyses the “read double” flag. If the flag is set the
sample has to be discarded. No samples are lost due
to the higher LIN frame frequency. This methods will
eliminate aliasing effects due of the different sample
frequencies.
In the second and fourth mode, the LIN master has to
ensure that the “read and trigger” telegrams will be
trasmitted with a fix period. In the first and third mode,
the LIN master has to ensure that the read telegram of
each telegram will be trasmit with a fix period.
6.2. Usage of Unconditional LIN Frames
Table 6–1 shows the four modes for a cluster consisting of n = 2 ... 16 HAL2810 slaves.
The frames “Read 2 Bytes” and “Read 4 Byets” provide data starting from the current address. The current address is determined by the last valid “Set
Address (Prepare data access)” frame.
1
non triggered,
non oversampling
HVD
triggered,
non oversampling
HVSH
3
non triggered,
oversampling
4
triggered,
oversampling
2
LIN frame
frequency
Description
Used
HVAL
register
#
LIN cluster
frame schedule
Table 6–1: Operation modes
Mode
Read Data from the HAL2810
RS0
RS1
...
RSn
fs
TRS0
RS1
...
RSn
fs
HVD
RS0
RS1
...
RSn
> fs × 1.1
HVSH
RS0
RS1
...
RSn
> fs × 1.1
Two special cases have to be taken into consideration:
1. There was no valid “Set Address” frame since the
last reset or LIN sleep mode.
2. The last “Set Address” frame was not correctly
transmitted.
In the first case, the sensor does not respond to a
“Read 2 Bytes” or “Read 4 Bytes” frame. Micronas recommends to send “Set Address” periodically.
The second case is more critical as the master may
read from the wrong address. Therefore a LIN error
handling must be implemented.
Legend
RSx : read telegram of sensor x
TRSX : trigger and read telegram of sensor x
fs : nominal sample frequency of the low pass filter
The HAL2810 stores detected LIN communication
errors in the LIN status register LINS. As the error
flags in this register are persistent, the user has to
reset it manually.
Note: Micronas recommends the LIN master to check
whether the “Set Address” frame was transmitted correctly. The master must interpret the data
provided by the HAL2810 according to the last
successfully transmitted address.
In the first and second mode, the LIN frame frequency
has to be the nominal sample frequency of the sen-
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ADVANCE INFORMATION
Write Data to the HAL2810
6.4. EMC and ESD
The “Set Address” frame is also used to write a byte to
a dedicated address. This is done by setting the WnRFlag (i.e. the MSB of Byte2).
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended. The series resistor and
the capacitor should be placed as closely as possible
to the Hall sensor.
Example: Reset the SPE register:
Table 6–2: Set_Address (Write Byte)
PID
Set_Address
03
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
BYTE1 BYTE2 BYTE3
07
80
00
CS
75
The LIN frame shown in Table 6–2
BYTE3 = 00 (hex) to the address 0007 (hex).
6.5. Application Circuit
VBAT
writes
The data bytes BYTE1 and BYTE2 combine the
address and the WnR flag = 8007 (hex)
47 Ω
Note: Micronas recommends to read and verify the
written data.
1 VSUP
6.3. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
47 nF
DIO
HAL2810
3
LIN
Bus
180 pF
2 GND
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × V DD × R thJX + I BUS × VBUS × RthJX
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application. The choice of the relevant RthJX-parameter
(Rthja, Rthjc, or Rthjs) depends on the way the device is
(thermally) coupled to its application environment.
Fig. 6–1: Recommended application circuit
Note: The external components needed to protect
against EMC and ESD may differ from the application circuit shown and have to be determined
according to the needs of the application specific environment.
For the HAL2810, the junction temperature TJ is specified. The maximum ambient temperature TAmax can
be calculated as:
T Amax = T Jmax – ΔT
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Nov. 21, 2007; AI000006_003EN
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HAL2810
ADVANCE INFORMATION
7. Data Sheet History
1. Advance Information: “HAL2810 Linear Hall-Effect
Sensor with LIN Bus”, Aug. 29, 2006, 6251-700-1AI.
First release of the Advance Information.
Originally created for HW version HAPB-1-1.
2. Advance Information: “HAL2810 Linear Hall-Effect
Sensor with LIN Bus”, April 12, 2007,
AI000006_002EN. Second release of the Advance
Information.
Originally created for HW version HAPB-1-4. Major
hanges:
– Functional description updated
– Changes in user registers
– Specification updated
3. Advance Information: “HAL2810 Linear Hall-Effect
Sensor with LIN Bus”, Nov. 21, 2007,
AI000006_003EN. Third release of the Advance
Information. Major changes:
– Functional description updated, adaption to design
version HAPB-1-5
– Graphics of UT packages updated
– Magnetic characteristics updated
– Application note chapter extended
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com
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