TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4072
VDRM
V(BO)
V
V
58
72
LM PACKAGE
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
MD4XAT
NC - No internal connection on pin 2
‘4082
66
82
‘4125
100
125
‘4150
120
150
‘4180
145
180
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
‘4240
180
240
T(A)
‘4260
200
260
‘4290
220
290
‘4320
240
320
‘4380
270
380
1
2
3
NC
R(B)
MD4XAKB
NC - No internal connection on pin 2
●
●
Rated for International Surge Wave Shapes
ITSP
WAVE SHAPE
STANDARD
10/160 µs
FCC Part 68
60
0.5/700 µs
I3124
38
10/700 µs
ITU-T K20/21
50
10/560 µs
FCC Part 68
45
10/1000 µs
REA PE-60
35
A
T
R
Ordering Information
DEVICE TYPE
device symbol
PACKAGE TYPE
TISP4xxxF3LM
Straight Lead DO-92 Bulk Pack
TISP4xxxF3LMR
Straight Lead DO-92 Tape and Reeled
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
TISP4xxxF3LMFR Formed Lead DO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texas Instruments standard warranty.
Production processing does not necessary include
testing of all parameters.
Copyright © 1999 Texas Instruments Incorporated
Designed and manufactured by Power
Innovations, Bedford, UK. under private
label for Texas Instruments.
1
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
description (continued)
TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The TISP4xxxF3LMF
is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings
RATING
SYMBOL
‘4072
Repetitive peak off-state voltage (0 °C < TJ < 70 °C)
VALUE
‘4082
± 66
‘4125
± 100
‘4150
± 120
‘4180
‘4240
UNIT
± 58
VDRM
± 145
± 180
‘4260
± 200
‘4290
± 220
‘4320
± 240
‘4380
± 270
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
175
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
120
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
60
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
50
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
38
38
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
50
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
45
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
35
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
80
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
70
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz,
1s
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < TJ < 70 °C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
2
ITSP
ITSM
A
4
A
diT/dt
250
A/µs
TJ
-40 to +150
°C
Tstg
-55 to +150
°C
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, TJ = 25 °C (unless otherwise noted)
PARAMETER
IDRM
Repetitive peak offstate current
TEST CONDITIONS
MIN
TYP
VD = ±VDRM, 0 °C < TJ < 70 °C
‘4072
V(BO)
V(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Impulse breakover
dv/dt = ±1000 V/µs,
voltage
di/dt < 20 A/µs
RSOURCE = 300 Ω
RSOURCE = 50 Ω,
dv/dt = ±250 V/ms,
VT
On-state voltage
IT = ±5 A, tW = 100 µs
IH
Holding current
IT = ±5 A, di/dt = +/-30 mA/ms
dv/dt
ID
Critical rate of rise of
off-state voltage
Off-state current
Coff
Off-state capacitance
±72
±82
‘4150
±150
‘4180
±180
‘4240
±240
‘4260
±260
‘4290
±290
‘4320
±320
‘4380
±380
‘4072
±86
‘4082
±96
‘4125
±143
‘4150
±168
‘4180
±198
‘4240
±267
‘4260
±287
‘4290
±317
‘4320
±347
Vd = 1 Vrms, VD = -50 V
V
±0.6
A
±3
V
±0.15
A
±5
kV/µs
±10
Vd = 1 Vrms, VD = 0,
V
±407
±0.15
VD = ±50 V
f = 100 kHz,
µA
±125
Linear voltage ramp, Maximum ramp value < 0.85VDRM
f = 100 kHz,
±10
‘4125
RSOURCE = 300 Ω
Breakover current
UNIT
‘4082
‘4380
I(BO)
MAX
µA
‘4072 - ‘4082
63
108
‘4125 - ‘4180
43
74
‘4240 - ‘4380
44
74
‘4072 - ‘4082
25
40
‘4125 - ‘4180
15
25
‘4240 - ‘4380
11
20
TYP
MAX
UNIT
120
°C/W
pF
thermal characteristics
PARAMETER
RθJA
Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
MIN
3
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
VDRM
-v
ID
VD
ID
VD
VDRM
+v
IDRM
IH
I(BO)
V(BO)
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR R AND T TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE T TERMINAL
4
PMXXAAB
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TC4XAA
10
0.99
Derating Factor
1.00
ID - Off-State Current - µA
100
1
VD = 50 V
0·1
TC4XAB
'4072
AND
'4082
0.98
0.97
VD = -50 V
0.96
0·01
0.95
-40
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
'4240
THRU
'4380
-35
-30
-25
-20
-15
-10
-5
TAMIN - Minimum Ambient Temperature - °C
Figure 2.
'4125
THRU
'4180
V(BO)I Normalised
to 25°C -Value
- On-State Current
A
10 '4240
THRU
1.0
'4380
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC3MAL
TC4XAC
'4072
AND
'4082
T
'4240
THRU
'4380
25°C
'4072
150°C
AND
'4082
1 -25
TC4XAD
2.0
1.5
Normalised Holding Current
100
1.1
0
Figure 3.
NORMALISED
V(BO)
ON-STATE CURRENT
vs
vs
ON-STATE
VOLTAGE
AMBIENT
TEMPERATURE
0.91
'4125
THRU
'4180
1.0
0.9
0.8
0.7
0.6
0.5
-40°C
0.4
225
5 6 125
7 8 9150
10
0
503
754
100
Voltage - -V°C
TA -VAmbient
Temperature
T - On-State
Figure 4.
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 5.
5
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPAL CURRENT
TC4XAE
1.3
TC4XAF
1.3
'4072
AND
'4082
'4072
AND
'4082
NEGATIVE POLARITY
Normalised Breakover Voltage
POSITIVE POLARITY
Normalised Breakover Voltage
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPAL CURRENT
1.2
'4240
THRU
'4380
1.1
'4125
THRU
'4180
1.2
'4240
THRU
'4380
1.1
'4125
THRU
'4180
1.0
0·001
0·01
0·1
1
10
1.0
0·001
100
di/dt - Rate of Rise of Principal Current - A/µs
Figure 6.
Off-State Capacitance - pF
Off-State Capacitance - pF
50
40
30
'4125
THRU
'4180
1
10
Terminal Voltage - V
Figure 8.
6
100
90
80
70
'4072
AND
'4082
60
10
0·1
1
10
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
POSITIVE POLARITY
20
0·1
100
Figure 7.
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TC4XAG
100
90
80
70
0·01
di/dt - Rate of Rise of Principal Current - A/µs
NEGATIVE POLARITY
'4072
AND
'4082
60
50
40
30
20
'4240
THRU
'4380
50
TC4XAH
10
0·1
'4125
THRU
'4180
'4240
THRU
'4380
1
10
Terminal Voltage - V
Figure 9.
50
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
THERMAL INFORMATION
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4LAAA
10
9
8
7
VGEN = 600 Vrms, 50/60 Hz
RGEN(t) = 1.4*VGEN / ITSM(t)
6
5
4
3
2
1
0·1
1
10
100
t - Current Duration - s
1000
Figure 10.
MECHANICAL DATA
device symbolization code
Devices will be coded as below.
DEVICE
SYMOBLIZATION
CODE
TISP4072F3
4072F3
TISP4082F3
4082F3
TISP4125F3
4125F3
TISP4150F3
4150F3
TISP4180F3
4180F3
TISP4240F3
4240F3
TISP4260F3
4260F3
TISP4290F3
4290F3
TISP4320F3
4320F3
TISP4380F3
4380F3
carrier information
Devices are shipped in one of the carriers below. A reel contains 2 000 devices.
PACKAGE TYPE
CARRIER
Straight Lead DO-92
Bulk Pack
ORDER #
TISP4xxxF3LM
Straight Lead DO-92
Tape and Reeled TISP4xxxF3LMR
Formed Lead DO-92
Tape and Reeled TISP4xxxF3LMFR
7
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
LM002 (DO-92)
2-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
.
LM002 Package (DO-92)
5,21
4,44
3,43 MIN.
4,19
3,17
2,67
2,03
2,67
2,03
5,34
4,32
2,20 MAX.
A
2
2
12,7 MIN.
0,56
0,40
1
3
3
1
VIEW A
1,40
1,14
0,41
0,35
2,67
2,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XARA
8
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
LM002 (DO-92) - Formed Leads Version
2-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LMF002 (DO-92) - Formed Leads Version of LM002
5,21
4,44
3,43 MIN.
4,19
3,17
2,67
2,03
2,67
2,03
5,34
4,32
2,20 MAX.
4,00 MAX.
A
2
2
0,56
0,40
1
3
3
1
VIEW A
2,90
2,40
2,90
2,40
0,41
0,35
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XASA
9
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
tape dimensions
LM002 Package (Straight Lead DO-92) Tape
LM002 Tape Dimensions Conform to
the Requirements of EIA-468-B
13,70
11,70
Body Indent Visible
32,00
23,00
0,50
0,00
2,50 MIN.
27,68
17,66
11,00
8,50
9,75
8,50
3,14
2,14
19,00
5,50
19,00
17,50
4,30
Adhesive Tape on Reverse
Side - Shown Dashed
VIEW A
φ 3,70
5,48
4,68
13,00
12,40
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
Direction of Feed
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XAPC
10
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
tape dimensions
LMF002 Package (Formed Lead DO-92) Tape
LMF002 Tape Dimensions Conform to
the Requirements of EIA-468-B
13,70
11,70
Body Indent Visible
32,00
23,00
27,68
17,66
0,50
0,00
2,50 MIN.
16,53
15,50
11,00
8,50
9,75
8,50
Adhesive Tape on Reverse
Side - Shown Dashed
5,28
4,88
19,00
5,50
19,00
17,50
4,30
φ 3,70
VIEW A
4,21
3,41
13,00
12,40
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
Direction of Feed
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XAQC
11
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders,
that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or
environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such
applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be
directed to TI through a local SC sales office.
In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be
provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any
patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
Copyright © 1999, Texas Instruments Incorporated
12