ECEN5817 Lecture 6 19.2.3 Parallel resonant dc-dc converter Differs from series resonant converter as follows: Different tank network Rectifier is driven by sinusoidal voltage voltage, and is connected to inductive-input low-pass filter Need a new model for rectifier and filter networks 1 ECEN 5817 Equivalent circuit model Parallel resonant dc-dc converter 2 ECEN 5817 Ways to construct transfer function H in terms of impedances 3 ECEN 5817 Construction of Zo – resonant (high Q) case C = 0.1 μ μF, L = 1 mH, Re = 1 kΩ 4 ECEN 5817 Construction of H = V / Vg – resonant (high Q) case C = 0.1 μ μF, L = 1 mH, Re = 1 kΩ 5 ECEN 5817 Construction of ||H|| 6 ECEN 5817 Dc conversion ratio of the PRC At resonance, this becomes • PRC can step up the voltage, provided R > R0 7 ECEN 5817 Comparison of approximate and exact PRC characteristics Parallel resonant converter Exact equation: solid lines Sinusoidal approximation: shaded lines 8 ECEN 5817 19.3 Soft switching in resonant converters Soft switching can mitigate some of the mechanisms of switching loss and possibly reduce the generation of EMI Losses due L d to t high hi h voltage lt andd high hi h currentt presentt in i switch it h during d i transitions, t iti e.g. due to diode reverse recovery Losses due to charging or discharging device capacitances through semiconductor devices Soft switching: semiconductor devices are switched on or off at the zero crossing of their voltage or current waveforms: Zero current switching: transistor turn-off Zero-current turn off transition occurs at zero current. current Zero-current switching eliminates the switching loss caused by IGBT current tailing and by stray inductances. It can also be used to commutate SCR’s. Zero-voltage g switching: g transistor turn-on transition occurs at zero voltage. g Diodes may also operate with zero-voltage switching. Zero-voltage switching eliminates the switching loss induced by diode stored charge and device output capacitances. Z Zero-voltage l switching i hi is i usually ll preferred f d in i converters based b d on MOSFETs MOSFET 9 ECEN 5817 19.3.1 Operation of the full bridge below resonance: Zero-current switching Series resonant converter example + Q1 Vg + – vds1(t) D1 Q3 D3 iQ1(t) – L C + vs(t) Q2 D2 Q4 – is(t) D4 Current bi-directional switches ZCS vs. vs ZVS depends on tank current zero crossings with respect to transistor switching times = tank voltage zero crossings Operation below resonance: input tank current leads voltage Zero-current switching (ZCS) occurs 10 ECEN 5817 Tank input impedance Operation below resonance: tank input impedance Zi is dominated by tank capacitor. Zi is negative, and tank input current leads tank input voltage voltage. || Zi || 1 C L R0 Re f0 Qe = R0 /Re Zero crossing of the tank input current waveform is(t) occurs before the zero crossing of the voltage vs(t) – before switch t transitions iti 11 ECEN 5817 Switch network waveforms, below resonance Zero-current switching + Q1 Vg + – vds1(t)( ) D1 Q3 D3 iQ1(t) – L C + vs(t) Q2 D2 Q4 – is(t) D4 Conduction sequence: Q1–D1–Q2–D2 Q1 is turned off during D1 conduction interval, without loss (same for Q4/D4) Q2 is turned off during D2 conduction interval, without loss (same for Q3/D3) 12 ECEN 5817 Turn-on transitions: significant switching losses + Q1 Vg + – Q vds1(t) D1 3 D3 iQ1(t) – L C + vs(t) Q2 D2 Q4 – is(t) D4 Q1 turns on while D2 is conducting. Stored charge of D2 and of semiconductor output capacitances must be removed. Transistor turn-on transition is identical to hardswitched PWM, and switching loss occurs. 13 ECEN 5817 More on Diode Stored Charge and Reverse Recovery Typical test circuit and parameter d fi iti definitions in i diode di d data sheets 14 ECEN 5817 “Snappy” and “soft-recovery” diodes Also see textbook Section 4.3.2 and HW 1 problem 3 solution 15 ECEN 5817