SPDT, High Power, RF-MEMS
Switch, DC to 40 GHz
Source 1
Features
■
Gate 1
Long Life at High Power (typical >10 billion cycles @
36 dBm cold-switched, >1 billion cycles @ 40 dBm
cold-switched)
Gate 2
■
Improved Hot-Switch Performance (typical > 100 billion
cycles @ 0 dBm, > 1 billion cycles @ 10 dBm )
■
High Isolation (typical 20 dB @ 10 GHz, 13 dB @ 35 GHz)
■
Low Insertion Loss (<0.5 dB typical @ 20 GHz)
■
Near Zero Harmonic Distortion
■
Source 2
Drain
RMSW220HP
Functional Block Diagram
Source 1
Drain
Gate 1
Gate 2
No Quiescent Power Dissipation
Source 2
■
Hermetically sealed die designed for die-attach and wire-bond
to board. Please contact us for other packaging options.
Description
The RMSW220HP is a Single Pole
Double Throw (SPDT) Reflective RF
Switch utilizing Radant’s breakthrough MEMS technology that
delivers high linearity, high
isolation, and low insertion loss in a
chip-scale package configuration.
This device is ideally suited for use
in many applications, such as RF
and microwave multi-throw
switching, radar beam steering
antennas, phase shifters, RF test
instrumentation, ATE,
telecommunications, and
broadband wireless access.
■ Phone: 978-562-3866
■ Fax: 978-562-6277
■ Email: sales@radantmems.com
Visit www.radantmems.com
Typical Device Specifications
Insertion Loss
DC
10 GHz
20 GHz
35 GHz
Isolation
DC
10 GHz
20 GHz
35 GHz
Return Loss
10 GHz
20 GHz
35 GHz
Input IP3
(Two-tone inputs
900 MHz and
901 MHz up to +5
dBm)
<4
< 0.45 dB
< 0.5 dB
< 0.8 dB
> 1 G
> 19 dB
> 17 dB
> 12 dB
< -25 dB
< -18 dB
< -15 dB
> 65 dBm
Lifecycle
Cold-switched, 36 dBm
Cold-switched, 40 dBm
Cold-switched, 42 dBm
Hot-switched, 0 dBm
Hot-switched, 10 dBm
Hot-switched, 40 dBm
Control
Gate-Source Voltage (on)
Gate-Source Voltage (off)
Control Power, steady-state
Control Power, 1 KHz cycle
rate
Switching speed
On
Off
> 1010 cycles
> 109 cycles
> 103 cycles
> 1011 cycles
> 109 cycles
> 103 cycles
+/- 90 V
0V
< 1 nW
< 2 W
< 10 s
< 2 s
Operating temperature
Maximum
Minimum
85 oC
-40 oC
Storage temperature
Maximum
Minimum
150 oC
-55 oC
Notes:
1. All RF measurements were made in a 50  system.
2. Measurements include bond-wires from die to test-board.
SPDT, High Power, RF-MEMS Switch, DC to 40 GHz
RMSW220HP
Typical RF Performance
S21 - rf2
S11 - rf1
8
4
-15
3
dB
dB
S11 - rf2
5
1
7
5
0
6
-20
2
-5
2
-30
-15
1
-35
-20
-40
-25
10 GHz
-19.96 dB
4
15 GHz
-16.90 dB
5
20 GHz
-17.20 dB
6
25 GHz
-19.25 dB
-45
-30
7
-50
-35
8
-55
-40
-60
-45
Start: 50 MHz
5 GHz
-26.69 dB
3
-10
Return Loss
Isolation
-25
2 GHz
-34.33 dB
Stop: 40 GHz
30 GHz
-16.62 dB
35 GHz
-13.27 dB
S21 - rf1
S21 - rf2
S11 - rf1
dB
S11 - rf2
0.2
5
1
0
0
2 GHz
-0.29 dB
2
5 GHz
-0.33 dB
3
10 GHz
-0.36 dB
4
15 GHz
-0.40 dB
5
20 GHz
-0.39 dB
-0.2
1
2
3
4
5
-5
6
-0.4
-10
7
-0.6
8
-15
-0.8
-20
Return Loss
S21 - rf1
-10
Insertion Loss
dB
-1
-25
6
25 GHz
-0.43 dB
-1.2
-30
7
-1.4
-35
30 GHz
-0.65 dB
8
-1.6
-40
35 GHz
-0.80 dB
-1.8
-45
Start: 50 MHz
Isolation
Stop: 40 GHz
Insertion Loss
* Measurement results include bond wires
Absolute Maximum Ratings
Maximum Temperature
(10 seconds)
(120 seconds)
Maximum Voltage, Gate-Source
290 oC
250 oC
+/- 110 V
Maximum Voltage, Drain-Source
+/- 100 V
Recommended Application
1. Figure shows one half of the SPDT switch. The Drain terminal is
common to both halves.
2. Resistors RS and RD (40 k-100 k) or inductors LS and LD should be
used to provide a path to DC Ground from Source and Drain.
3. VG may be of either polarity.
4. VG rise-time should be at least 10 s for optimal lifetime.
5. Please refer to the application note entitled “Test and Handling of
SPST RF-MEMS Switches” for more information. Contact us for driver
solutions.
■ Phone: 978-562-3866
■ Fax: 978-562-6277
■ Email: sales@radantmems.com
Visit www.radantmems.com
SPDT, High Power, RF-MEMS Switch, DC to 40 GHz
SPDT, High Power, RF-MEMS Switch, DC to 40 GHz
RMSW220HP
RMSW220HP
Nominal Device Dimensions
100 μm
100 μm
RMI
650 μm
Bond Pads
1.4 mm
250 μm
250 μm
Backside ground (gold)
400 μm
1.45 mm
Please contact us for a footprint in .gds or .dxf format.
Static sensitivity
This device has an ESD (HBM) sensitivity of 100 V. Use proper ESD precautions when handling. Please
refer to the application note entitled “Test and Handling of SPST RF-MEMS Switches” for more
information.
Die Assembly
The gold backside-metallization on the die is designed to be mounted with electrically conductive silver
epoxy, or with a lower temperature solder which does not consume gold. Bond pads on the die are
made of gold. Ball-bonds should be utilized to attach gold or aluminum 1 mil wires. Please refer to the
application note entitled “Test and Handling of SPST RF-MEMS Switches” for more information.
■ Phone: 978-562-3866
■ Fax: 978-562-6277
■ Email: sales@radantmems.com
Visit www.radantmems.com