Sl:
No.
Description / Spec
Required by LRDE
Specification
offered by Vendor
Qty
Remarks /
Deviation
To be entered in
Price Bid only
Unit
Total
Price
Price
1. GaN Pulsed Power Amplifier, ( Model No. RFHA1020 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:1.
Frequency
:
1.2 GHz to 1.4 GHz
2.
Manufacturing technology
:
GaN HEMT Technology
3.
Peak Power Output
:
54.5 dBm ± 0.5 dB
4.
Mode of Operation
:
Pulsed
5.
Pulse width
:
100µsec typical.
6.
Duty cycle
:
10% min.
7.
Drain Efficiency
:
50% typical
8.
Power Gain
:
13dB ± 2 dB
9.
Supply Voltage
:
50 V DC typical
10.
Rated Junction Temp.
:
+200 C (max.)
11.
Operating Temperature
:
-30 C to 70 deg C
12.
Package
:
Flanged Ceramic,2 Pin
13.
Typical Dimension
:
17.4 mm * 24 mm * 4.10 mm ( excluding I/O Pins)
21.4 mm * 24 mm* 4.10 mm ( including I/O Pins)
2.
30 Watt GaN Wide Band Power Amplifier, (Model No. RF3931 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:1.
Frequency
:
DC to 3.5 GHz
2. Manufacturing technology
:
GaN HEMT Technology
3. Power Output
:
47 dBm ± 1 dB
4. Drain Efficiency at O/P Power
: 60 % typ.
5. Mode of Operation
:
Continuous or Pulsed
6. Power Gain
:
12 dB ± 2 dB .@ 2140 MHz
7. Input Return Loss
:
10 dB min..
8. Supply Voltage
:
48 V DC typical
9. Rated Junction Temp.
:
+200 C (max.)
10. Operating Temperature
:
-30 C to 70 deg C
11. Package
:
Flanged Ceramic,2 Pin
12. Typical Dimension
:
5.84 mm * 20.32 mm * 3.23 mm ( excluding I/O Pins)
17.78 mm * 20.32 mm * 3.23 mm ( including I/O Pins)
3.
25 Watt Wide Band Power Amplifier, ( Model No. RF3833 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:-
1.
Frequency
:
30 MHz to 2.0 GHz
2.
Manufacturing technology
:
GaN HEMT Technology
3.
Power Output
:
43 dBm typical
4.
Mode of Operation
:
CW or Pulsed
5.
Gain
:
10 dB ± 1 dB .
6.
Power Added Efficiency
:
45 % typical
7.
Supply Voltage
:
48 V DC typical
8.
Rated Junction Temp.
:
+200 C (max.)
9.
Operating Temperature
:
-30 C to 70 deg C
10. Package
:
AIN Leadless Chip Carrier / SO8
11. Typical Dimension
:
0.25 * 0.25 * 0.103 ( All in inches, excluding I/O Pins)
4.
Gain Block, (Model No. SBB5089Z or Equivalent)
Qty : As Encl.
SPECIFICATIONS:1.
Frequency
2.
Manufacturing technology
3.
Power Output at 1 dB
: 50 MHz to 6 GHz
:
InGaP Heterojunction Bipolar Transistor (HBT)
Compression
:
20.5 dBm @ 850 MHz
4.
Gain
:
20 dB ± 2 dB @ 850 MHz.
5.
Input/Output Return Loss
:
Better than 10 dB
6.
Supply Voltage
:
Single 5V Supply
7.
Rated Junction Temp.
:
+150 C (max.)
8.
Operating Temperature
:
-30 C to 70 deg C
9.
Package
:
SOT-89
:
4.5 mm* 2.5 mm * 1.5 mm ( excluding Pins)
:
4.5 mm* 3.9 mm * 1.5 mm ( including Pins)
10. Typical Dimension
5. 2 Watt Power Amplifier, ( Model No.RFPA2126 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:1.
Frequency
:
700 MHz to 2.2 GHz
2.
Manufacturing technology
:
InGaP Heterojunction Bipolar Transistor (HBT)
3.
Mode of Operation
:
CW
4.
Power Output at 1 dB
Compression
: 33 dBm ± 1 dB @ 1.96 GHz
5.
Gain
:
13 dB ± 1 dB .@ 1.96 GHz
6.
Input/Output Return Loss
:
Better than 10 dB
7.
Supply Voltage
:
Single 5V Supply
8.
Rated Junction Temp.
:
+150 C (max.)
9.
Operating Temperature
:
-30 C to 70 deg C
10.
Package
:
DFN, 6-Pin
11.
Typical Dimension
:
5.59 mm* 6.23 mm * 0.85 mm ( excluding Pins)
6.
LNA MMIC 2-Stage, (Model No.SPF5344Z or Equivalent)
Qty : As Encl.
SPECIFICATIONS:-
1.
Frequency
: 0.8 GHz to 4 GHz
2.
Manufacturing technology
: GaAs pHEMT
3.
Noise Figure
: 1.25 dB typ @ 2 GHz over temp.
4.
Power Output at 1 dB
Compression
: 22 dBm ± 1 dB @ 2 GHz
5.
Gain
: 24 dB ± 1 dB @ 2 GHz. Over temp
6.
Input/Output Return Loss
: 10 dB (min.)
7.
Supply Voltage
:
8.
Rated Junction Temp.
: +150 C (max.)
9.
Operating Temperature
: -30 C to 70 deg C
Single 5V Supply
10. Package
: QFN, 20-Pin
11. Typical Dimension
: 4 mm*4 mm * 0.85 mm ( excluding Pins)
7.
Circulator , ( Model No. RFCR2301 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:-
1.
Frequency
:
1.2 GHz - 1.4 GHz
2.
Insertion Loss
:
0.3 dB max
3.
Isolation
:
Better than 20 dB .
4.
Input/Output Return Loss
:
Better than 20 dB .
5.
Fwd Peak Power/ Avg Power :
1000 Watts max /200 Watts max
6.
Operating Temperature
:
-30 C to 70 deg C
7.
Rotation Sense
:
ClockWise
8.
Package
:
Drop-In
9.
Typical Dimension
:
25.4 mm * 25.4 mm * 9 mm ( excluding I/O Pins)
8.
Circulator , ( Model No. RFCR2308 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:-
1.
Frequency
:
1.2 GHz to 1.4 GHz
2.
Insertion Loss
:
0.3 dB max
3.
Isolation
:
Better than 20 dB.
4.
Input/Output Return Loss
:
Better than 20 dB.
5.
Fwd Peak Power/ Avg Power :
6.
Operating Temperature
7.
Rotation Sense
:
Anti Clock Wise
8.
Package
:
Drop-In
9.
Typical Dimension
:
25.4 mm * 25.4 mm * 9 mm ( excluding I/O Pins)
9.
Isolator , ( Model No. RFSL2301 or Equivalent)
1000 Watts max /200 Watts max
:
-30 C to 70 deg C
Qty : As Encl.
SPECIFICATIONS:1
Frequency
:
1.2 GHz to 1.4 GHz
2
Insertion Loss
:
0.3 dB max
3
Isolation
:
Better than 20 dB.
4
Input/Output Return Loss
5
Fwd Peak Power/ Avg Power
:
1000 Watts max. /200 Watts max
6
Reverse Power CW
:
20 Watts max.
7
Operating Temperature
:
-30 C to 70 deg C
8
Rotation Sense
:
ClockWise
9
Package
:
Drop-In
:
Better than 20 dB.
10
Typical Dimension
:
25.4 mm * 25.4 mm * 9 mm ( excluding I/O Pins)
10. Isolator , (Model No. RFSL2307 or Equivalent)
Qty : As Encl.
SPECIFICATIONS:1.
Frequency
:
1.2 GHz to 1.4 GHz
2.
Insertion Loss
:
0.3 dB max
3.
Isolation
:
Better than 20 dB.
4.
Input/Output Return Loss
:
Better than 20 dB.
5.
Fwd Peak Power/ Avg Power :
1000 Watts max. /200 Watts max
6.
Reverse Power CW
:
20 Watts max.
7.
Operating Temperature
:
-30 C to 70 deg C
8.
Rotation Sense
:
AntiClockWise
9.
Package
10. Typical Dimension
:
Drop-In
:
25.4 mm * 25.4 mm * 9 mm ( excluding I/O Pins)
Acceptance Criteria:
1)
All the components have to meet their all required specifications mentioned in Spec Sheet..
2)
Test Report of Components / COC have to be submitted over the operating temperatures during
Delivery
Other Criteria:
1)
Warranty of components have to be 1 year from the date of Acceptance at LRDE.
2)
Vendor should enclose all the datasheets with Bid
LIST OF DELIVERABLES
S. No
1
Description
GaN Power Amplifier,280
Watt, Pulsed ,Wide Band
30 Watt GaN Wide Band
Power Amplifier
25 Watt GaN Wide Band
Power Amplifier
Power Amplifier,2W ,Single
Stage
LNA,MMIC, 2 Stage
2
3
4
5
Model no.
RFHA1020
Quantity
10 Nos
or Equivalent
RF3931
10 Nos
or Equivalent
RF3833
06 No
or Equivalent
RFPA2126
20 No
or Equivalent
SPF5344Z
20 No
or Equivalent
`6
Gain Block, Active Bias
SBB5089Z
20 No
or Equivalent
7
Circulator
RFCR2301
5 No
or Equivalent
`8
Circulator
RFCR2308
5 No
or Equivalent
9
Isolator
RFSL2301
5 No
or Equivalent
10
Isolator
RFSL2307
5 No
or Equivalent
The vendor should indicate point-to-point compliance for the full specification.
Only original equipment manufacturers or authorised representatives with certificate
from OEM should quote.
The vendor should furnish the details of similar item supplied earlier with evidence.
Only OEM (or) authorized distributors with certificate from OEM should quote. If not,
quote will be summarily rejected.
Note:
1.
2.
3.
4.
The above format to be submitted in duplicate after duly filling but price
information to be given in only one copy.
The copy of above format without price information should be enclosed to
techno commercial bid
The copy with price information must be enclosed to price bid only
Disclosure of price information in techno commercial bid will lead to
rejection of the quote
Contact details : Shri Swaraj Varshney
Scientist C
RADL, LRDE
Phone No. 080-25025579