MEC25XDRA
X-Band 0.5 Watt Power Amplifier
Main Features
 0.25µm GaAs pHEMT Technology
 8.9– 11.0 GHz full performance Frequency
Range
 Small Signal Gain > 21 dB
 Input Output RL > 12 dB
 P1dB > 27 dBm
 Bias: Vd = 6V, Id = 190mA,
Vg = -0.5 V (Typ.)
 Chip Size: 1.98 x 1.80 x 0.07 mm3
MEC25XDRA is a 0.25µm GaAs
pHEMT based Power Amplifier
designed by MEC for X-Band
applications.
In the frequency range from 8.9 GHz to
11 GHz it provides more than 21 dB of
linear gain and input and output return
loss of 15 dB and 12 dB respectively.
Typical Applications
 Radar
 Point-to-Point Radio
 X Band Driver
Measured Data
When driven at 1 dB of Gain
compression it gives in the same
frequency band an output power greater
than 27 dBm with an overall PAE above
40%.
- 1/5 Preliminary Data Sheet
CONFIDENTIAL
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 11/06/14
25/01/13
Rev.
MEC25XDRA
X-Band 0.5 Watt Power Amplifier
Main Characteristics
Test Conditions: Tbase_plate = 25°C , Vd = 6 V, Idq = 190 mA
Parameter
Min
Operating frequency
Typ
8.9
Small Signal Gain
Max
Unit
11.0
GHz
21
dB
Input Return Loss
-15
dB
Output Return Loss
-12
dB
Output Power at 1 dB of Gain Compression
27
Drain Supply Voltage
Supply Quiescent Drain Current
PAE
dBm
6
V
190
mA
40
%
- 2/5 Preliminary Data Sheet
CONFIDENTIAL
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 11/06/14
25/01/13
Rev.
MEC25XDRA
X-Band 0.5 Watt Power Amplifier
MEC25XDRA - Selected Measurements
Test Conditions: Tbase_plate = 25°C , Vd = 6 V, Idq = 190 mA
Linear Gain, Return Losses (dB)
30
25
20
15
10
S21
5
S11
0
S22
-5
-10
-15
-20
-25
-30
-35
8.6
8.8
9
9.2 9.4
9.6
9.8
10 10.2 10.4 10.6 10.8 11 11.2 11.4
Frequency (GHz)
30
55
200
29
52.5
195
28
50
190
47.5
185
45
180
42.5
175
40
170
22
37.5
165
21
35
20
32.5
19
30
18
27.5
26
P1dB
25
Gain
24
23
8.8
9
9.2
9.4
9.6
9.8
10
10.2 10.4 10.6 10.8
11
PAE (%)
27
11.2 11.4
160
PAE
Id0
8.8
Frequency (GHz)
9
9.2 9.4 9.6 9.8
Drain Current [mA]
Pout (dBm), Gain (dB)
Test Conditions: Tbase_plate = 25°C , Vd = 6 V, Idq = 190 mA - Input Power = 7 dBm
155
150
145
10 10.2 10.4 10.6 10.8 11 11.2 11.4
Frequency (GHz)
- 3/5 Preliminary Data Sheet
CONFIDENTIAL
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 11/06/14
25/01/13
Rev.
MEC25XDRA
X-Band 0.5 Watt Power Amplifier
Bond Pad Configuration & Assembly Recommendations
VG
VD
VG
VD
C2
C2
C2
C2
C1
C1
C1
C1
External
Components
Bond Pad #
Connection
IN and OUT
2 Bonding Wires
L_bond = 0.3nH
1, 3
Vg
L_bond ≤ 1 nH
C1 = 100pF/10V
C2 = 10nF/10V
2, 4,
Vd
L_bond ≤ 1nH
C1 = 100pF/50V
C2 = 10nF/50V
Eutectic Die bond using AuSn (80/20)
solder is recommended.
PAD #
Dim.
Connection
IN
122x200 µm2
RF IN GSG Pitch 200 µm
OUT
122x200 µm2
RF OUT GSG Pitch 200 µm
1
200x100 µm2
DC Vgg
2
200x100 µm2
DC Vdd
3
200x100 µm2
DC Vgg
4
200x100 µm2
DC Vdd
5
200x100 µm2
GND
The backside of the die is the Source
(ground) contact.
Thermosonic ball or wedge bonding are the
preferred connection methods.
Gold wire must be used for connections.
Bias Procedure
Bias-Up
Bias-Down
1. Vg set to - 1.5 V.
2. Vd set to +6 V.
3. Adjust Vg until quiescent Id is 190
mA (Vg = -0.5 V Typical).
4. Apply RF signal.
1.
2.
3.
4.
5.
Turn off RF signal.
Reduce Vg to -1.5 V (Id0 ≈ 0 mA).
Set Vd to 0 V.
Turn off Vd.
Turn off Vg.
- 4/5 Preliminary Data Sheet
CONFIDENTIAL
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 11/06/14
25/01/13
Rev.
MEC25XDRA
X-Band 0.5 Watt Power Amplifier
Contact Information
For additional technical Information and Requirements:
Email: contact.mec@mec-mmic.com
Tel: +39 0516333403
For sales Information and Requirements:
Email: sales@mec-mmic.com
Tel: +39 0637511124
Notice
The furbished information is believed to be reliable. However, performances and specifications contained herein
are based on preliminary characterizations and then susceptible to possible variations. On the basis of customer
requirements the product can be tested and characterized in specific operating conditions and, if needed, tuned to
meet custom specifications.
The contents of this document are under the copyright of MEC srl. It is released by MEC srl on condition that it
shall not be copied in whole, in part or otherwise reproduced (whether by photographic, reprographic, or any other
method) and the contents thereof shall not be divulged to any person other than inside the company at which has
been provided by MEC.
- 5/5 Preliminary Data Sheet
CONFIDENTIAL
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 11/06/14
25/01/13
Rev.