HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Amplifiers - Linear & Power - SMT
9
Typical Applications
Features
The HMC5846LS6 is ideal for:
Saturated Output Power: 35.5 dBm @ 30% PAE
• Point-to-Point Radios
High Output IP3: 42.5 dBm
• Point-to-Multi-Point Radios
High Gain: 31 dB
• VSAT & SATCOM
DC Supply: +7V @ 1200 mA
• Military & Space
No External Matching Required
Functional Diagram
General Description
The HMC5846LS6 is a 4 stage GaAs pHEMT MMIC
2 Watt Power Amplifier with an integrated temperature
compensated power detector which operates between
12 and 16 GHz. The HMC5846LS6 provides 31 dB of
gain, 35.5 dBm of saturated output power, and 30%
PAE from a +7V supply. The HMC5846LS6 exhibits
excellent linearity and is optimized for high capacity
digital microwave radio. It is also ideal for 13.75 to 14.5
GHz Ku Band VSAT transmitters as well as SATCOM
applications.
Electrical Specifications
TA = +25 °C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA [1]
Parameter
Min.
Frequency Range
Gain
26
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Typ.
12 - 16
(IP3)[2]
Total Supply Current (Idd)
32.5
Max.
Units
GHz
31
dB
0.06
dB/ °C
10
dB
17
dB
34.5
dBm
35.5
dBm
42.5
dBm
1200
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +7V @ 1200 mA, Pout / Tone = +22 dBm
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
40
38
34
20
0
+25C
+85C
-40C
22
-30
18
10
11
12
13
14
15
FREQUENCY (GHz)
16
17
18
11
12
13
14
15
16
17
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
+25C
+85C
-40C
-4
-8
-12
-16
-10
-15
-20
-25
-30
-20
11
12
13
14
15
16
11
17
12
13
P1dB vs. Temperature
15
16
17
P1dB vs. Supply Voltage
38
36
36
34
34
P1dB (dBm)
38
32
+25C
+85C
-40C
30
14
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
9
26
-10
-20
RETURN LOSS (dB)
30
32
30
28
5V
6V
7V
28
26
Amplifiers - Linear & Power - SMT
S21
S11
S22
10
GAIN (dB)
RESPONSE (dB)
30
26
12
13
14
FREQUENCY (GHz)
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Psat vs. Supply Voltage
38
36
36
Psat (dBm)
38
34
+25C
+85C
-40C
32
30
32
5V
6V
7V
28
12
13
14
15
16
12
13
FREQUENCY (GHz)
36
36
34
34
Psat(dBm)
P1dB (dBm)
38
32
32
16
15
16
900mA
1000mA
1100mA
1200mA
30
900mA
1000mA
1100mA
1200mA
28
15
Psat vs. Supply Current (Idd)
38
30
14
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
28
26
26
12
13
14
15
16
12
13
FREQUENCY (GHz)
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
48
46
46
44
44
42
42
IP3 (dBm)
48
40
38
40
38
36
+25C
+85C
-40C
34
14
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
36
900mA
1000mA
1100mA
1200mA
34
32
32
30
30
12
13
14
FREQUENCY (GHz)
9-3
34
30
28
IP3 (dBm)
Amplifiers - Linear & Power - SMT
9
Psat (dBm)
Psat vs. Temperature
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +5V
48
80
46
70
44
60
40
38
36
5V
6V
7V
34
50
40
30
10
32
30
0
12
13
14
15
16
10
12
14
FREQUENCY (GHz)
70
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
80
40
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
18
20
22
24
20
22
24
Output IM3 @ Vdd = +7V
80
30
16
Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
40
30
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
10
10
0
0
10
12
14
16
18
20
22
24
10
12
14
Pout/TONE (dBm)
35
Pout (dBm), GAIN (dB), PAE (%)
40
35
30
25
20
15
Pout
Gain
PAE
10
5
-8
-6
-4
-2
0
2
INPUT POWER (dBm)
18
Power Compression @ 14 GHz
40
0
-10
16
Pout/TONE (dBm)
Power Compression @ 13 GHz
Pout (dBm), GAIN (dB), PAE (%)
9
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
4
6
8
30
25
Amplifiers - Linear & Power - SMT
IM3 (dBc)
IP3 (dBm)
42
20
15
Pout
Gain
PAE
10
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Power Compression @ 15 GHz
Detector Voltage Over Temperature
10
35
Vref-Vdet (V)
25
20
15
Pout
Gain
PAE
10
1
0.1
5
0.01
-8
-6
-4
-2
0
2
4
6
8
10
-5
3
19
27
35
Gain & Power vs.
Supply Current @ 14 GHz
Reverse Isolation vs. Temperature
40
Gain (dB), P1dB (dBm), Psat (dBm)
0
-10
+25C
+85C
-40C
-20
ISOLATION (dB)
11
OUTPUT POWER (dBm)
INPUT POWER (dBm)
-30
-40
-50
-60
-70
-80
35
30
Gain
P1dB
Psat
25
20
-90
11
12
13
14
15
16
900
17
1000
Gain & Power vs.
Supply Voltage @ 14 GHz
1100
1200
Idd (mA)
FREQUENCY (GHz)
Power Dissipation
10
45
9
40
POWER DISSIPATION (W)
Gain
P1dB
Psat
35
30
25
8
7
6
5
Max Pdis @ 85C
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
4
3
2
1
20
5
5.5
6
Vdd (V)
9-5
12.5GHz +25C
12.5GHz +85C
12.5GHz -55C
15.5GHz +25C
15.5GHz +85C
15.5GHz -55C
30
0
-10
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - SMT
9
Pout (dBm), GAIN (dB), PAE (%)
40
6.5
7
0
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Reliability Information
Junction Temperature to Maintain
1 Million Hour MTTF
150 °C
150 °C
Nominal Junction Temperature
(T= 85 °C and Pin = 10 dBm)
90 °C
Continuous Pdiss (T= 85 °C)
(derate 133 mW/°C above 85 °C)
8.6 W
Operating Temperature
-55 to +85 °C
Thermal Resistance
(channel to die bottom)
7.55 °C/W
Storage Temperature
-65 to +150 °C
Drain Bias Voltage (Vdd)
+8V
RF Input Power (RFIN)
+24 dBm
Channel Temperature
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A Pass 250V
9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings
9-6
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Outline Drawing
Amplifiers - Linear & Power - SMT
9
9-7
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA, WHITE
2. LEAD AND GROUND PADDLE PLATING: GOLD OVER NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking [1]
HMC5846LS6
Package Body Material, ALUMIN WHITE
Gold over Nickel
MSL3
H5846
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Pad Descriptions
Function
Description
6
RFIN
This Pin is DC coupled and matched to 50 Ohms over the
operating frequency.
1-4
9, 10
Vdd4, Vdd3, Vdd2,
Vdd1, Vdd5, Vdd6
Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pin followed by 0.01 μF
capacitors and a 4.7 μF capacitors.
8
Vgg1
Gate controlled amplifier. External bypass capacitors of
100 pF are required followed by 0.01 μF capacitors and a
4.7 μF capacitors.
7, 13, 16
GND
These Pins and Package bottom must be connected to
RF/DC ground.
11
Vref
DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet.
12
Vdet
DC voltage representing RF output rectified by diode which
is biased through an external resistor.
14
RFOUT
This Pin is DC coupled and matched to 50 Ohms.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
Amplifiers - Linear & Power - SMT
Pad Number
9-8
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Evaluation PCB
Amplifiers - Linear & Power - SMT
9
List of Materials for Evaluation PCB
EVAL01-HMC5846L56 [1]
Item
Description
J1, J2
PCB Mount K Connectors, SRI
J5, J6
DC Pins
C1 - C6, C20, C21, C23
100 pF Capacitors, 0402 Pkg.
C7 - C12, C19, C25, C26
0.01 μF Capacitors, 0603 Pkg.
C13 - C18, C29 - C31
4.7 μF Capacitors, Case A Pkg.
R1 - R2
40.2 kOhm Resistor, 0402 Pkg.
U1
HMC5846LS6 Amplifier
PCB [2]
128996 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[2] Circuit Board Material: Rogers 4350
9-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5846LS6
v00.0111
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Notes:
Amplifiers - Linear & Power - SMT
9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9 - 10