HMC1029
v01.0412
Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Typical Applications
Features
The HMC1029 is ideal for:
Saturated Output Power: +35 dBm @ 25% PAE
• Point-to-Point Radios
High Output IP3: +42 dBm
• Point-to-Multi-Point Radios
High Gain: 24 dB
• VSAT & SATCOM
DC Supply: +6V @ 1400 mA
• Military & Space
No External Matching Required
Die Size: 2.79 x 2.37 x 0.1 mm
Functional Diagram [3]
General Description
The HMC1029 is a four stage GaAs pHEMT MMIC
2 Watt Power Amplifier which operates between 29
and 37 GHz. The HMC1029 provides 24 dB of gain,
+35 dBm of saturated output power, and 25% PAE
from a +6V power supply. The HMC1029 exhibits
excellent linearity and is optimized for high capacity
point-to-point and point-to-multi-point radio systems.
The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a
50 Ohm test fixture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
29 - 34
21
Gain Variation Over Temperature
24
Typ.
34 - 37
19.5
0.025
Max.
Units
GHz
22.5
dB
0.03
dB/ °C
Input Return Loss
20
18
dB
Output Return Loss
14
20
dB
30.5
dBm
Saturated Output Power (Psat)
Output Power for 1 dB Compression (P1dB)
35
34
dBm
Output Third Order Intercept (IP3)[2]
42
40
dBm
1400
1400
mA
Total Supply Current (Idd)
27
31
27
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Measurement taken at +6V @ 1400 mA, Pout / Tone = +24 dBm
[3] Vgg1 and Vgg2 connected internally, amplifier can be biased by either Vgg1 or Vgg2
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
28
26
S21
S11
S22
10
GAIN (dB)
RESPONSE (dB)
20
0
-10
24
22
20
-20
+25 C
+85 C
-55 C
18
16
-30
25
27
29
31
33
35
37
28
39
30
Input Return Loss vs. Temperature
36
38
0
+25 C
+85 C
-55 C
-10
-10
RESPONSE (dB)
RETURN LOSS (dB)
34
Output Return Loss vs. Temperature
0
-20
-30
-20
+25 C
+85 C
-55 C
-30
-40
-40
28
30
32
34
36
38
28
30
FREQUENCY (GHz)
34
36
38
36
38
P1dB vs. Supply Voltage
34
32
32
P1dB (dBm)
34
30
+25C
+85C
-55C
28
32
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
32
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
30
30
26
30
5V
5.5V
6V
28
26
24
24
28
30
32
34
FREQUENCY (GHz)
36
38
28
30
32
34
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
37
35
35
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
37
33
31
+25 C
+85 C
-55 C
29
31
5V
5.5V
6V
27
28
30
32
34
36
38
28
30
FREQUENCY (GHz)
32
34
P1dB vs. Supply Current (Idd)
32
35
Psat (dBm)
37
30
28
33
31
1200 mA
1200 mA
1400 mA
1400 mA
29
24
27
28
30
32
34
36
38
28
30
FREQUENCY (GHz)
34
36
38
Output IP3 vs.
Supply Current, Pout/Tone = +24 dBm
46
46
41
41
36
+25 C
+85 C
-55 C
31
32
FREQUENCY (GHz)
IP3 (dBm)
IP3 (dBm)
38
Psat vs. Supply Current (Idd)
34
26
36
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +24 dBm
36
1200 mA
31
26
1400 mA
26
28
30
32
34
FREQUENCY (GHz)
3
33
29
27
P1dB (dBm)
Amplifiers - Linear & Power - Chip
Psat vs. Temperature
36
38
28
30
32
34
36
38
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +24 dBm
Output IM3 @ Vdd = +5V
70
60
50
IM3 (dBc)
IP3 (dBm)
41
5V
5.5V
6V
36
40
30
30 GHz
31 GHz
32 GHz
34 GHz
35 GHz
36 GHz
20
31
10
26
0
28
29
30
31
32
33
34
35
36
37
38
10
12
14
16
FREQUENCY (GHz)
70
60
60
50
50
40
30 GHz
31 GHz
32 GHz
34 GHz
35 GHz
36 GHz
20
10
22
24
20
22
24
40
30
30 GHz
31 GHz
32 GHz
34 GHz
35 GHz
36 GHz
20
10
0
0
10
12
14
16
18
20
22
24
10
12
14
16
Pout/TONE (dBm)
18
Pout/TONE (dBm)
Power Compression @ 30 GHz
Power Compression @ 33 GHz
40
35
Pout (dBm), Gain (dB), PAE (%)
40
Pout (dBm), Gain (dB), PAE (%)
20
Output IM3 @ Vdd = +6V
70
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +5.5V
30
18
Pout/TONE (dBm)
Amplifiers - Linear & Power - Chip
46
Pout
Gain
PAE
30
25
20
15
10
5
0
35
Pout
Gain
PAE
30
25
20
15
10
5
0
-9
-6
-3
0
3
6
INPUT POWER (dBm)
9
12
15
-9
-6
-3
0
3
6
9
12
15
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Power Compression @ 36 GHz
Reverse Isolation vs. Temperature
0
-10
Pout
Gain
PAE
30
+25C
+85C
-55C
-20
ISOLATION (dB)
Pout (dBm), Gain (dB), PAE (%)
35
25
20
15
-30
-40
-50
10
-60
5
-70
0
-10 -8
-80
-6
-4
-2
0
2
4
6
8
10
12 14
28
16
30
32
Gain & Power vs.
Supply Current @ 33 GHz
36
38
Gain & Power vs.
Supply Voltage @ 33 GHz
40
Gain (dB), P1dB (dBm), Psat (dBm)
40
35
30
25
GAIN(dB)
P1dB(dBm)
Psat(dBm)
20
15
1200
34
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - Chip
40
35
30
25
GAIN (dB)
P1dB (dBm)
Psat (dBm)
20
15
1250
1300
1350
1400
5
Idd (mA)
5.2
5.5
5.7
6
Vdd (V)
Power Dissipation
POWER DISSIPATION (W)
12
10
8
6
30 GHz
31 GHz
32 GHz
34 GHz
35 GHz
36 GHz
4
2
0
-7
-3
1
5
9
13
17
INPUT POWER (dBm)
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Drain Bias Voltage (Vdd)
+7V
RF Input Power (RFIN)
+20 dBm
Channel Temperature
150 °C
Vdd (V)
Idd (mA)
+5.0
1400
+6.0
1400
Note: Amplifier will operate over full voltage ranges shown
above, Vgg adjusted to achieve Idd = 1400 mA at +6V
Continuous Pdiss (T= 85 °C)
(derate 135 mW/°C above 85 °C)
8.8 W
Thermal Resistance
(channel to die bottom)
7.39 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Amplifiers - Linear & Power - Chip
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Amplifiers - Linear & Power - Chip
Pin Descriptions
7
Pad Number
Function
Description
1
RFIN
RF signal input. This pin is AC coupled and matched to 50
Ohms over the operating frequency range.
2, 12
Vgg1, Vgg2
Gate control for amplifier. Amplifier can be biased by either
Vgg1 or Vgg2. External bypass capacitors of 100pF, 0.01uF,
and 4.7uF are required.
3, 4, 5, 6
Vdd1-4
Drain bias voltage for the top half of the amplifier. External
bypass capacitors of 100pF required for each pin, followed
by common 0.01uF and 4.7uF Capacitors.
7
RFOUT
RF signal output. This pad is AC coupled and matched to 50
Ohms over the operating frequency range.
8, 9, 10, 11
Vdd5-8
Drain bias voltage for the bottom half of the amplifier.
External bypass capacitors of 100 pF required for each pin
followed by common 0.01uF and 4.7uF capacitors.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Amplifiers - Linear & Power - Chip
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1029
v01.0412
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
29 - 37 GHz
Amplifiers - Linear & Power - Chip
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10