SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0093 at VGS = 10 V
50
0.0122 at VGS = 4.5 V
50
VDS (V)
60
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-252
D
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
Symbol
Limit
Unit
VGS
± 20
V
50
ID
50a
IDM
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
IS
50
Avalanche Current
IAS
50
EAS
125
Single Avalanche Energy (Duty Cycle  1 %)
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TA = 25 °C
mJ
136
PD
W
3b, 8.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
A
100
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t  10 sec
Maximum Junction-to-Ambienta
Steady State
Typical
Maximum
15
18
RthJA
RthJC
Maximum Junction-to-Case
40
50
0.85
1.1
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t  10 s.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Typ.a
Max.
2
3
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
± 100
VDS = 60 V, VGS = 0 V, TJ = 175 °C
On-State Drain Currentb
ID(on)
VDS =5 V, VGS = 10 V
b
Forward Transconductance
Dynamic
RDS(on)
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source
Chargec
Qgs
0.0093
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.0160
VGS = 10 V, ID = 20 A, TJ = 175 °C
0.0200
VGS = 4.5 V, ID = 15 A
0.0122
VDS = 15 V, ID = 20 A
60
2650
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
470
225
47
VDS = 30 V, VGS = 10 V, ID = 50 A
70
nC
10
12
Turn-On Delay Timec
td(on)
10
20
15
25
35
50
20
30
Rise
Turn-Off Delay Timec
Fall Timec
td(off)

S
Qgd
tr
µA
A
0.0074
Gate-Drain Chargec
Timec
nA
250
50
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistanceb
V
VDD = 30 V, RL = 0.6 
ID  50 A, VGEN = 10 V, Rg = 2.5 
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
A
Pulsed Current
ISM
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
1
1.5
V
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/µs
45
100
ns
100
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
100
VGS = 10 thru 5 V
80
4V
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
60
40
TC = 125 °C
20
20
25 °C
2 V, 3 V
- 55 °C
0
0
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
5
0.015
TC = - 55 °C
0.012
VGS = 4.5 V
25 °C
80
0.009
VGS = 10 V
125 °C
60
R DS(on) -
g fs - Transconductance (S)
100
40
20
0
0.006
0.003
0.000
0
10
20
30
I D - Drain Current (A)
40
0
50
40
60
80
100
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
4000
VGS - Gate-to-Source Voltage (V)
3500
3000
C - Capacitance (pF)
20
Ciss
2500
2000
1500
1000
Coss
VDS = 30 V
ID = 50 A
8
6
4
2
500
Crss
0
0
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
60
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
VGS = 10 V
ID = 20 A
2.0
I S - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.5
1.5
1.0
TJ = 150 °C
TJ = 25 °C
10
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
175
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
THERMAL RATINGS
1000
60
Limited by
RDS(on)*
100
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
10 µs
100 µs
10
1 ms
10 ms
100 ms
DC
1
TC = 25 °C
Single Pulse
0.1
10
0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
175
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72004.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
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
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Revision: 13-Jun-16
1
Document Number: 91000