VS-ST280S Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal
insulator
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
TO-209AB (TO-93)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IT(AV)
280 A
VDRM/VRRM
400 V, 600 V
VTM
1.28 V
IGT
150 mA
TJ
-40 °C to 125 °C
Package
TO-209AB (TO-93)
Diode variation
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers




MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
280
A
85
°C
440
IT(RMS)
ITSM
I2t
50 Hz
7850
60 Hz
8220
50 Hz
308
60 Hz
281
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400/600
V
100
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST280S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
I
/I
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE DRM RRM
TJ = TJ MAXIMUM mA
V
04
400
500
06
600
700
30
Revision: 11-Mar-14
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VS-ST280S Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current 
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
440
No voltage
reapplied
100 % VRRM
reapplied
6600
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
°C
7850
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
8220
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
310
220
218
t = 0.1 to 10 ms, no voltage reapplied
3100
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.84
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.50
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.47
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.28
VTM
IH
Maximum (typical) latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
200
VT(TO)1
Maximum holding current
A
6900
Low level value of threshold voltage
Maximum on-state voltage
UNITS
280
DC at 75 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000 (300)
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise 
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNIT
S
μs
BLOCKING
PARAMETER
Maximum critical rate of rise 
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and 
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
Revision: 11-Mar-14
Document Number: 94402
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VS-ST280S Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp  5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp  5 ms
3.0
IGT
TJ = 25 °C
TJ = - 40 °C
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
A
V
5.0
Maximum required gate trigger/current/
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
TJ = 125 °C
180
-
90
150
40
-
2.9
-
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.2
-
TJ = TJ maximum
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated VDRM
anode to cathode applied
UNIT
S
W
20
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.105
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
Mounting torque, ± 10 %
31 (275)
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
24.5 (210)
N·m
(lbf · in)
280
g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94402
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VS-ST280S Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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130
ST280SSeries
RthJC (DC) = 0.105 K/ W
120
110
Conduc tion Angle
100
90
30°
60°
90°
120°
80
0
50
100
150
200
180°
250
130
ST280S Series
RthJC (DC) = 0.105 K/ W
120
110
Conduc tion Period
100
90
30°
80
90°
120°
180°
DC
70
0
300
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
180°
120°
90°
60°
30°
150
Conduc tion Angle
100
ST280SSeries
TJ = 125°C
50
K/
W
R
0.4
RMSLimit
K/
W
ta
el
-D
200
W
K/
0.3
1
0.
0.
25
K/
W
K/
W
=
250
0.
16
0.
2
SA
300
h
R t
Maximum Average On-state Power Loss (W)
60°
K/
W
0.6
K/ W
0.8 K
/W
1.2 K
/W
0
0
50
100
150
200
250
300
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
500
W
K/
K/
W
0.
16
K/
W
0. 2
K/
W
0.3
K/ W
0.4
K/ W
-D
ta
el
R
Conduc tion Period
150
03
0.
250
200 RMS Limit
K/
W
=
300
0.
12
SA
350
0.
08
W
K/
400
h
R t
DC
180°
120°
90°
60°
30°
450
06
0.
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0.6 K
/W
ST280S Series
TJ = 125°C
100
50
1 K/ W
0
0
50 100 150 200 250 300 350 400 450
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94402
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VS-ST280S Series
7000
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
ST280SSeries
3500
3000
1
10
7000
Pea k Half Sine Wave On-sta te Current (A)
Peak Half Sine Wave On-state Current (A)
www.vishay.com
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
ST280S Series
3500
3000
100
1
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
TJ= 25°C
TJ = 125°C
1000
ST280SSeries
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.105 K/ W
(DC Operation)
0.1
0.01
ST280SSeries
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 11-Mar-14
Document Number: 94402
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VS-ST280S Series
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Vishay Semiconductors
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
(b)
VGD
IGD
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
(a)
(1)
Device: ST280S Series
0.01
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
Tj=-40 °C
1
0.1
0.001
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(2)
(3) (4)
Frequenc y Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
28
0
S
06
P
0
V
1
2
3
4
5
6
7
8
9
1
2
-
Vishay Semiconductors product
Thyristor
3
-
Essential part number
4
-
0 = Converter grade
5
-
S = Compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base 3/4"-16UNF-2A threads
8
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9
-
V = Glass-metal seal
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95077
Revision: 11-Mar-14
Document Number: 94402
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Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 ± 10
(8.41 ± 0.39)
White gate
238.5 ± 10
(9.39 ± 0.39)
Red shrink
75 (2.95)
MIN.
White shrink
Ø 28.5 (1.12)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
SW 32
3/4"-16UNF-2A
35 (1.38)
MAX.
0° to 15°
4 MAX.
38 MAX.
Fast-on terminals
AMP. 280000-1
REF-250
23 MIN.
Flexible lead
C.S. 35 mm2
(0.054 s.i.)
Document Number: 95077
Revision: 19-May-10
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
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Revision: 13-Jun-16
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