RH1009
2.5V Reference
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DESCRIPTIO
ABSOLUTE
The RH1009 is a general purpose 2.5V shunt regulator
diode designed to operate over a wide current range while
maintaining good stability with time and temperature. The
adjust terminal allows either temperature coefficient to be
minimized or the reference voltage to be adjusted without
changing the temperature coefficient. Because it operates
as a shunt regulator it can be used equally well as a positive
or negative reference.
Reverse Breakdown Current ................................ 20mA
Forward Current .................................................. 10mA
Operating Temperature Range ............. – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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RATI GS
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent
military applications.
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BUR -I CIRCUIT
PACKAGE/ORDER I FOR ATIO
BOTTOM VIEW
20V
+
2k
–
ADJ
NC
H PACKAGE
3-LEAD TO-46 METAL CAN
RH1009 BI
TOP VIEW
NC
1
10
NC
NC
2
9
NC
NC
3
8
V+
V–
4
7
ADJ
NC
5
6
NC
W PACKAGE
10-LEAD CERPAC
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
VZ
IR = 1mA
ΔVZ
ΔIR
rZ
ΔVZ
ΔVZ
ΔTime
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Change with Current
Reverse Dynamic
Impedance
Temperature Stability
Long Term Stability
NOTES
MIN
(Preirradiation)
TJ = 25°C
TYP MAX
2.495
400μA ≤ IR ≤ 10mA
IR = 1mA
1
SUB- – 55°C ≤ TJ ≤ 125°C SUBGROUP MIN TYP MAX
GROUP
2.505
1
6
1
0.6
1
TA = 25°C ±0.1°C,
IR = 1mA
20
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
UNITS
V
10
2,3
mV
1
Ω
15
mV
ppm/kHr
1
RH1009
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
10KRAD(Si)
NOTES MIN
MAX
CONDITIONS
VZ
Reverse Breakdown
Voltage
IR = 1mA
2.495
ΔVZ
ΔIZ
Reverse Breakdown Voltage 400μA ≤ IR ≤ 10mA
Change with Current
rZ
Reverse Dynamic
Impedance
IR = 1mA
1
20KRAD(Si)
MIN
MAX
2.505 2.495
50KRAD(Si)
MIN
MAX
2.505 2.495
100KRAD(Si)
MIN
MAX
2.505 2.495
200KRAD(Si)
MIN
MAX
2.505 2.495
2.505
UNITS
V
6
6
8
10
12
mV
0.6
0.6
0.8
1.0
1.4
Ω
Note 1: Guaranteed by design, characterization or correlation to other
tested parameters.
TOTAL DOSE BIAS CIRCUIT
(Postirradiation) (Note 2)
Note 2: TA = 25°C unless otherwise noted.
15V
12.4k
RH1009 TDBC
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TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3
Group A Test Requirements (Method 5005)
1,2,3
Group C and D End Point Electrical Parameters
(Method 5005)
1
* PDA Applies to subgroup 1. See PDA Test Notes.
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
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TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Breakdown Voltage
Change with Current
Reverse Breakdown Voltage
0
600μA ≤ IR ≤ 10mA
IR = 1mA
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
REVERSE BREAKDOWN VOLTAGE (V)
2.502
2.501
2.500
2.499
2.498
–2
–4
–6
–8
–10
–12
–14
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1009 G01
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1009 G02
I.D. No. 66-10-0174 Rev. C 0607
2
Linear Technology Corporation
LT 0607 REV C • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
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© LINEAR TECHNOLOGY CORPORATION 1990