SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
FEATURES
• Wafer Level Chip Size Package with Solder Ball
• Low Noise Figure : NF=2.3dB (typ.)
• High Associated Gain : Gas=20dB (typ.)
• +5dBm Input Third Order Intercept Point (IIP3)
• Low Current Consumption : IDD_LNA=30mA
• Impedance Matched Zin/ Zout = 50ohm
DESCRIPTION
The SMM5722XZ is a Low Noise/ Driver Amp MMIC for applications in
the 12 to 16GHz frequency range. This product is well suited for satellite
communications, radio link and wireless communications where low
noise characteristics is required. The flip chip die can be used in solder
reflow process.
Sumitomo Electric Device Innovations’s stringent Quality Assurance
Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Drain Voltage
Item
Symbol
VDD
Rating
6
Unit
Gate Voltage (for Gain Control)
VGC
-1
V
Input RF Power
Pin
0
dBm
Storage Temperature
Tstg
-40 to +125
deg.C
Unit
V
RECOMMENDED OPERATING CONDITIONS
Drain Voltage
Item
Symbol
VDD
Conditions
5
Gate Voltage (for Gain Control)
VGC
-0.5 to 0
V
Input RF Power
Pin
<= 0
dBm
Operating Case Temperature
Tc
-40 to +85
deg.C
V
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Test Conditions
Limits
Min.
RF Frequency Range
Associated Gain
Gain Control Range
Noise Figure
Input 3rd.Order Intercept Point
Unit
Typ.
Max.
VDD=5V
12
16
GHz
Ｉ DD_LNA=30mA *1
17
20
23
dB
∆Gain
---
8
---
dB
NF
---
2.3
3.0
dB
fRF
Gas
IIP3
---
5
---
dBm
Output Power at 1dB G.C.P.
P1dB
---
11
---
dBm
Input Return Loss
RLin
---
8
---
dB
RLout
---
10
---
dB
VGC
-0.5
---
0.0
V
Output Return Loss
VGC Volatge
*1. Adjust VGC voltage between 0 to -0.5V to set to IDD_LNA=30mA
ESD
Class 0
up to 250V
Note: Based on JEDEC JESD22-A114-C
RoHS Compliance
Yes
ORDERING INFORMATION
Part Number
SMM5722XZ
SMM5722XZT
Edition 1.1
February. 2012
Packing
Order Unit
100 pcs.
500 pcs.
100pcs. / Tray = 100pcs. / Packing
500pcs. / Reel = 500pcs. / Packing
1
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
INPUT IP3 vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
@ VDD=5V, IDD=30mA, TC=+25deg.C, Pin=-17dBm (2-tone)
30
10
25
8
6
20
IIP3 (dBm)
Gain (dB)
@ VDD=5V, IDD=30mA, TC=+25deg.C, Pin=-20dBm
15
10
4
2
0
5
-2
-4
0
7
8
9
7
10 11 12 13 14 15 16 17 18 19
8
9
10 11 12 13 14 15 16 17 18 19
RF Frequency (GHz)
RF Frequency (GHz)
OUTPUT IP3 vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
@ VDD=5V, IDD=30mA, TC=+25deg.C, Pin=-17dBm (2-tone)
@ VDD=5V, IDD=30mA, TC=+25deg.C
30
5.0
4.5
4.0
25
OIP3 (dBm)
NF (dB)
3.5
3.0
2.5
2.0
1.5
20
15
1.0
0.5
10
0.0
7
8
9 10 11 12 13 14 15 16 17 18 19
7
RF Frequency (GHz)
Edition 1.1
February. 2012
8
9
10 11 12 13 14 15 16 17 18 19
RF Frequency (GHz)
2
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
INPUT RETURN LOSS
OUTPUT RETURN LOSS
@ VDD=5V, IDD=30mA, TC=+25deg.C
0
0
-5
-5
-10
-10
S22 (dB)
S11 (dB)
@ VDD=5V, IDD=30mA, TC=+25deg.C
-15
-20
-20
-25
-25
-30
-30
8
9 10 11 12 13 14 15 16 17 18
8
Freq. (GHz)
@ VDD=5V, IDD=30mA, TC=+25deg.C
30
20
10
0
-10
-20
-30
-40
-50
0
5
10
15
20
25
30
Freq. (GHz)
Edition 1.1
February. 2012
9 10 11 12 13 14 15 16 17 18
Freq. (GHz)
FORWARD TRANSMISSION
S21 (dB)
-15
3
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
INPUT IP3 vs. IDD
CONVERSION GAIN vs. IDD
@ VDD=5V, TC=+25deg.C, Pin=-17dBm (2-tone)
24
10
22
8
20
6
IIP3 (dBm)
Gain (dB)
@ VDD=5V, TC=+25deg.C, Pin=-20dBm
18
16
Idd=30mA
14
12
Idd=40mA
2
0
Idd=40mA
-2
-4
7
8
9 10 11 12 13 14 15 16 17 18 19
7
NOISE FIGURE vs. IDD
@ VDD=5V, TC=+25deg.C
4.0
3.5
3.0
2.5
2.0
1.5
Idd=30mA
1.0
Idd=35mA
Idd=40mA
0.5
0.0
7
8
9 10 11 12 13 14 15 16 17 18 19
Frequnecy (GHz)
Edition 1.1
February. 2012
8
9 10 11 12 13 14 15 16 17 18 19
Frequnecy (GHz)
Frequnecy (GHz)
NF (dB)
Idd=35mA
4
Idd=35mA
10
Idd=30mA
4
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
Pout vs. RF FREQUENCY
INPUT IP3 vs. PIN
@ VDD=5V, IDD=30mA, TC=+25deg.C
@ VDD=5V, IDD=30mA, f=14GHz, TC=+25deg.C
16
6
Pin=+5dBm
14
5
Pin=0dBm
Pin=-6dBm
10
8
IIP3 (dBm)
Pout (dBm)
12
Pin=-10dBm
4
3
2
6
Pin=-15dBm
1
4
2
0
7
8
9
10
11
12
13
14
15
16
17
18
19
-21
-20
RF Frequency (GHz)
26
14
60
25
12
50
10
40
8
30
6
20
20
4
10
19
0
18
2
-2
0
OIP3 (dBm)
23
22
21
-21
2
-20
-19
-18
-17
2-tone Total Pin (dBm)
Pin (dBm)
Edition 1.1
February. 2012
-15
24
Idd (mA)
Pout (dBm)
70
-4
-16
@ VDD=5V, IDD=30mA, f=14GHz, TC=+25deg.C
16
-6
-17
OUTPUT IP3 vs. PIN
@ VDD=5V, IDD=30mA, f=14GHz, TC=+25deg.C
-8
-18
2-tone Total Pin (dBm)
POUT, IDD vs. PIN
-18 -16 -14 -12 -10
-19
5
-16
-15
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
CONVERSION GAIN vs. VGC
Current consumption vs. VGC
@ VDD=5V, Pin=-20dBm, TC=+25deg.C
@ VDD=5V, Pin=-20dBm, TC=+25deg.C
25
70
23
60
50
Idd (mA)
Gain (dB)
21
19
17
40
30
20
15
10
13
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.6
0
-0.5
-0.4
-0.3
Vgc (V)
-0.2
-0.1
0
Vgc (V)
f=12GHz
f=16GHz
f=12GHz
f=16GHz
OUTPUT IP3 vs. VGC
INPUT IP3 vs. VGC
@ VDD=5V, Pin=-17dBm(2-tone), TC=+25deg.C
@ VDD=5V, Pin=-17dBm(2-tone), TC=+25deg.C
30
6
4
25
OIP3 (dBm)
IIP3 (dBm)
2
0
20
-2
15
-4
-6
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
10
-0.6
0
-0.5
-0.4
Edition 1.1
February. 2012
-0.2
-0.1
Vgc (V)
Vgc (V)
f=12GHz
-0.3
f=16GHz
f=12GHz
6
f=16GHz
0
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
INPUT IP3 vs. TEMPERATURE
CONVERSION GAIN vs. TEMPERATURE
@ VDD=5V, IDD=30mA, Pin=-17dBm
@ VDD=5V, IDD=30mA, Pin=-20dBm
30
28
24
-40deg.C
8
25deg.C
6
85deg.C
4
IIP3 (dBm)
Gain (dB)
26
22
20
2
0
-2
-4
18
16
14
-40deg.C
-6
25deg.C
-8
85deg.C
-10
11
12
13
14
15
16
17
11
Frequency (GHz)
@ VDD=5V, IDD=30mA, Pin=-17dBm
(2-tone)
26
24
22
20
18
-40deg.C
25deg.C
16
85deg.C
14
11
12
13
14
15
16
17
Frequency (GHz)
Edition 1.1
February. 2012
12
13
14
15
Frequency (GHz)
OUTPUT IP3 vs. TEMPERATURE
OIP3 (dBm)
(2-tone)
10
7
16
17
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
■ Chip outline and Functional Diagram
±
Die Size : 1.77mm x 1.57mm
Die Thickness : 275um
Solder ball diameter : 168um
Solder ball thickness : 121um
Pad Pitch : 400um
Alloy of solder ball : Sn-3.0Ag-0.5Cu
1
Index
4
5722
2
±
3
Product Number
±
±
±
UBM
Solder Bump
±
±
2
3
±
1
4
Edition 1.1
February. 2012
8
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
■ Typical Application
VDD
VGC
1
4
RF in
RF out
2
3
Pin Assignment
Component List
Pin
Name
Name
Description
Value
1
VGC
C1
Capacitor
0.1uF
2
RF input
C2
Capacitor
100pF
3
RF output
4
VDD
*All bumps except Pin 1 to 4 are GND
Edition 1.1
February. 2012
C1
C2
C2
C1
9
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
■ PCB and Solder-resist Pattern
Vgc
VDD
WLCSP MMIC
RF in
RF out
Resist Pattern
Filled Via
Resist Window
(Through Hole)
Φ0.12+/-0.025
Φ0.14mm
0.4mm Pitch
NOTES.
1) Core Material ; Rogers CORP. 4003
Thickness 0.2mm typ. , Er=3.38 typ.
2) Copper Foil Thickness ; 18um typ.
3) Finish Copper Foil ; Ni 1um min. / Au 0.1um max.
4) Resist ; +/− 25um.
5) All Dimensions are in mm.
Edition 1.1
February. 2012
10
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
■ 2-inch Tray Packing (Part No. : SMM5722XZ)
Tray Material : ABS – TP10
Maximum Quantity : 100 pcs. / Tray
Ordering Unit : 100 pcs. / order
Minimum Order ing Unit : 100 pcs. ( 1 Tray)
Edition 1.1
February. 2012
11
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
■ Tape and Reel Packing (Part No. : SMM5722XZT)
Tape Material :
Reel Material :
Maximum Quantity : 500 pcs. / tape
Ordering Unit : 500 pcs. / order
Minimum Ordering Unit :500pcs.
Edition 1.1
February. 2012
12
SMM5722XZ
12 – 16GHz Low Noise/ Driver Amplifier MMIC
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Edition 1.1
February. 2012
13