PH435
High Linearity InGaP HBT Amplifier
Features
Applications
1500MHz - 3000MHz
Mobile Infrastructure
14.8 dB Gain at 2.3GHz
PCS, WCDMA, WiBro
+25 dBm P1dB
W-LAN / ISM
+42 dBm Output IP3
RFID / Fixed Wireless
Functional Diagram
4
3
2
1
Single Voltage Supply
Function
Pin No.
Lead-free
Lead
free / Green / RoHSRoHS
RF IN
1
compliant SOT-89 Package
RF OUT / Bias
3
Ground
2,4
Description
The PH435 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality
SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The
y matched to obtain optimum
p
p
y The p
g
power and linearity.
product is targeted
for use as driver
device can be easily
amplifier for wireless infrastructure applications. The PH435 operates from a single +5 voltage supply and have
an internal active bias. All devices are 100% RF and DC tested
Specifications
Symbol
Parameters
Units
Freq.
Min.
Typ.
S21
Gain
dB
1900 MHz
2140 MHz
2300 MHz
16.8
15.1
14.8
S11
Input Return Loss
dB
1900 MHz
2140 MHz
2300 MHz
-17
-17
-14
S22
Output Return Loss
dB
1900 MHz
2140 MHz
2300 MHz
-17
17
-14
-14
P1dB
Output Power @1dB
compression
dBm
1900 MHz
2140 MHz
2300 MHz
25.5
25.5
25.5
OIP3
Output Third Order
intercept
dB
dBm
1900 MHz
2140 MHz
MH
2300 MHz
42.0
42 0
42.0
42.5
NF
Noise Figure
dB
1900 MHz
2140 MHz
2300 MHz
3.1
3.0
3.2
V/I
Device voltage / current
V/mA
5/152
Rth
Thermal Resistance
°C/W
53
Tj
Junction Temperature
°C
125
Max.
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +7dBm/tone separated by 1MHz.
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1
November 2006
PH435
High Linearity InGaP HBT Amplifier
1900 MHz Application Circuit
+5 V
Frequency
1900 MHz
S21 : Gain
17.0 dB
1uF
20pF
S11 : Input Return Loss
-19 dB
S22 : Output Return Loss
-19 dB
Output P1dB
+25.5 dBm
Output IP3 @7dBm
+42 dBm
IS-95A Ch. Power
@ -45dBc ACPR
+19.0 dBm
22nH
RF IN
1.5pF
Gain vs. Frequency
Noise Figure
3.1 dB
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
-6
18
-10
-12
S22(dB)
-5
16
-15
o
12
1800
1850
1900
1950
o
+25 C
o
-40 C
o
+85 C
-20
-25
1800
2000
1850
Frequency(MHz)
32
-18
+25 C
o
-40 C
o
+85 C
o
+25 C
o
-40 C
o
+85 C
14
Output Return Loss
0
20
S11(dB)
Gain(dB)
20pF
1.0pF
2.0pF
22
RF OUT
50Ω/6mm
1900
1950
-24
-30
1800
2000
1850
Frequency(MHz)
o
+7dBm/tone, +25 C
50
1950
2000
OIP3 vs. Temperature
Output IP3 vs. Frequency
P1dB vs. Frequency
1900
Frequency(MHz)
Freq=1900MHz, +7dBm/tone
46
30
44
26
24
40
o
1850
1900
1950
+25 C
o
-40 C
o
+85 C
35
30
1800
2000
1850
1900
Frequency(MHz)
q
y(
)
6
42
40
o
+25 C
o
-40 C
o
+85 C
22
20
1800
OIP3(dBm)
28
OIP3(dBm)
P1dB(dBm)
45
1950
2000
2050
38
2100
36
-40
-20
0
20
40
60
80
o
Frequency(MHz)
q
y(
)
Temperature(
p
( C))
ACPR IS-95A vs. Channel Power
Noise Figure vs. Frequency
-40
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
-45
4
-50
ACPR(dBc)
NF(dB)
freq=1.9GHz
5
3
-60
2
1
0
1800
-55
-65
o
+25 C
-70
1850
1900
Frequency(MHz)
1950
2000
10
12
14
16
18
20
22
Output Channel Power(dBm)
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2
November 2006
PH435
High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit
+5 V
1uF
20pF
20
-20 dB
-16 dB
Output P1dB
+26.0 dBm
Output IP3 @7dBm
+42 dBm
WCDMA Ch. Power
@ -45dBc ACLR
+17.0 dBm
Noise Figure
3.0 dB
Supply Voltage
5V
Current
152 mA
1.2pF
Gain vs. Frequency
15.4 dB
S11 : Input Return Loss
20pF
1.5pF
S21 : Gain
RF OUT
50Ω/6mm
1.0pF
2140 MHz
S22 : Output Return Loss
22nH
RF IN
Frequency
Input Return Loss
0
Output Return Loss
0
-5
16
-20
-10
14
S22(dB)
-10
S11(dB)
Gain(dB)
o
18
-30
10
2050
+25 C
o
-40 C
o
+85 C
2100
+25 C
o
-40 C
o
+85 C
-40
2150
2200
-50
2050
2250
2100
Frequency(MHz)
2200
OIP3(dBm)
24
22
2150
2200
44
40
+25 C
o
-40 C
o
+85 C
30
2050
2100
40
2150
2200
38
2250
36
-40
-20
0
20
40
60
80
o
Frequency(MHz)
q
y(
)
Frequency(MHz)
q
y(
)
6
42
o
35
2250
2250
Freq=2140MHz, +7dBm/tone
46
o
+25 C
o
-40 C
o
+85 C
2200
OIP3 vs. Temperature
o
+7dBm/tone, +25 C
50
2150
Frequency(MHz)
45
2100
2100
Output IP3 vs. Frequency
P1dB vs. Frequency
26
20
2050
-25
2050
2250
Frequency(MHz)
28
P1dB(dBm)
2150
-20
OIP3(dBm)
30
-15
o
o
12
+25 C
o
-40 C
o
+85 C
Temperature( C)
W-CDMA ACLR vs. Channel Power
Noise Figure vs. Frequency
3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset
-40
freq=2.14GHz
-45
ACLR(dBc)
NF(dB)
5
4
3
-50
-55
2
o
+25 C
1
2050
2100
2150
Frequency(MHz)
2200
2250
-60
10
12
14
16
18
20
Output Channel Power(dBm)
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3
November 2006
PH435
High Linearity InGaP HBT Amplifier
2300 MHz Application Circuit
+5 V
Frequency
2300 MHz
S21 : Gain
15.0 dB
S11 : Input Return Loss
-15 dB
1uF
20pF
S22 : Output Return Loss
-15 dB
O t t P1dB
Output
+25.5
25 5 dB
dBm
Output IP3 @7dBm
+42.5 dBm
22nH
RF IN
2.0pF
20pF
1.8pF
1.2pF
1.5pF
Gain vs. Frequency
Noise Figure
3.1 dB
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
16
-10
-10
S22(dB)
-5
S11(dB)
-5
14
-15
o
+25 C
o
-40 C
o
+85 C
12
2250
2300
2350
6
-15
o
-25
2200
2400
o
+25 C
o
-40 C
o
+85 C
-20
2250
Frequency(MHz)
2300
2350
+25 C
o
-40 C
o
+85 C
-20
-25
2200
2400
2250
Frequency(MHz)
Noise Figure vs. Frequency
5
30
4
28
3
2
24
o
+25 C
o
-40 C
o
+85 C
o
2250
2300
2350
20
2200
2400
2250
2300
2350
2400
Frequency(MHz)
q
y(
)
Frequency(MHz)
q
y(
)
OIP3 vs. Temperature
Output IP3 vs. Frequency
Freq=2300MHz, +7dBm/tone
o
+7dBm/tone, +25 C
50
2400
26
+25 C
0
2200
2350
P1dB vs. Frequency
22
1
2300
Frequency(MHz)
32
P1dB(dBm)
NF(dB)
46
44
45
OIP3(dBm)
10
2200
Output Return Loss
0
18
OIP3(dBm)
Gain(dB)
20
RF OUT
50Ω/6mm
40
42
40
o
+25 C
o
-40 C
o
+85 C
35
30
2200
2250
2300
2350
2400
2450
38
36
-40
2500
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
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4
November 2006
PH435
High Linearity InGaP HBT Amplifier
Absolute Maximum Ratings
g
Parameter
Rating
Unit
Supply Voltage
+6
V
Supply Current
220
mA
RF Power Input
12
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Junction Temperature
230
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings
1. ESD sensitive device.
Observe Handling Precautions.
Precautions
2. ESD Rating : Class 1C(Passes at 1000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Mounting Instructions
Evaluation Board Layout (4x4)
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
l
layers
near the
h part to ensure optimal
i l thermal
h
l
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
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November 2006