TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Product Description
Qorvo’s TGA2595-CP is a balanced Ka-Band power
amplifier fabricated on Qorvo’s QGaN15 0.15 um GaN on
SiC process. The balanced configuration supports low
return loss and improves robustness into non-ideal loads.
Operating from 27.5 to 31 GHz, the TGA2595-CP achieves
39 dBm saturated output power with power-added
efficiency of > 22 % and power gain of 21 dB.
The TGA2595-CP is packaged in a 10-lead 15 x 15 mm
bolt-down package with a Cu base for superior thermal
management. To simply system integration, the TGA2595CP is fully matched to 50 ohms with integrated DC blocking
capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial and
defense satellite communications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Functional Block Diagram
Product Features









Frequency Range: 27.5 – 31 GHz
POUT: 39 dBm (PIN = 18 dBm)
PAE: > 22 % (PIN = 18 dBm)
Power Gain: 21 dB (PIN = 18 dBm)
IM3 @ 30 dBm/Tone = −27 dBc
IM5 @ 30 dBm/Tone = −46 dBc
Bias: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical
Package Dimensions: 15.2 x 15.2 x 5.2 mm
Package base is pure Cu offering superior thermal
management
Applications
1
10
2
3
4
5
9
8
7
6
 Satellite Communications
Ordering Information
Rev. B
Part No.
ECCN
Description
TGA2595-CP
3A001.b.2.c
27.5 – 31 GHz 8 W GaN
Power Amplifier
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Recommended Operating
Conditions
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation (PDISS), 85 °C
Input Power, CW, 50 Ω, (PIN)
Input Power, CW, VSWR 6:1,
VD = +22 V, 85 °C, (PIN)
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
Storage Temperature
Value / Range
Value / Range
Parameter
29.5 V
−5 to 0 V
2.8 A
−6 to 34 (1) mA
48 W
30 dBm
Drain Voltage (VD): Pulsed
Drain Current (IDQ)
Drain Current Under RF Drive
(ID_DRIVE)
Gate Voltage (VG)
Gate Current Under RF Drive
(IG_DRIVE)
Temperature (TBASE)
25 dBm
+20 V
560 mA
See plots p. 6
−2.5 V (Typ.)
See plots p. 6
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
275 °C
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Max rating for IG is at Channel Temperature (TCH) of 200 °C .
Electrical Specifications
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power (at PIN = 18 dBm)
Power Added Efficiency (at PIN = 18 dBm)
Power Gain (at PIN = 18 dBm)
IM3 @ 30 dBm/Tone
IM5 @ 30 dBm/Tone
Output Power Temperature Coefficient
(25 °C to 85 °C only)
Recommended Operating Voltage
Min
Typ
Max
Units
27.5
–
–
–
–
–
–
–
–
–
> 25
> 12
> 13
39
> 22
21
−27
−46
31
–
–
–
–
–
–
–
–
GHz
dB
dB
dB
dBm
%
dB
dBc
dBc
–
−0.01
–
dBm/°C
–
20
22
V
Test conditions unless otherwise noted: 25 °C, VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical.
Rev. B
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
(1)
Channel Temperature (TCH) (Quiescent)
CW, VD = +20 V, IDQ = 560 mA,
TBASE = 85 °C PDISS =11.2 W
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (under RF drive)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (under RF drive)
Median Lifetime (TM)
Notes:
1.
VD = +20 V, IDQ = 280 mA, TBASE = 85 °C,
Freq = 29 GHz, PIN = 18 dBm, POUT = 37.9 dBm,
PDISS = 21.2 W, ID_Drive = 1.37 A
VD = +20 V, IDQ = 560 mA, TBASE = 85 °C,
Freq = 29 GHz, PIN = 18 dBm, POUT = 39.4 dBm,
PDISS = 27.6 W, ID_Drive = 1.81 A
Value
Units
3.3
°C/W
125
°C
4.0E+13
Hrs
3.61
°C/W
170
°C
5.9E+10
Hrs
3.76
°C/W
197
°C
2.2E+9
Hrs
Thermal resistance measured to back of package.
Median Lifetime
Test Conditions: VD = +28 V; Failure Criteria = 10 % reduction in ID_MAX
Dissipated Power vs. Freq. vs. Temp.
30
29
24
23
27
22
26
PDISS (W)
PDISS (W)
Pin = 18 dBm,
T = 85 °C
25
28
25
24
23
21
20
19
280 mA
18
-40 °C
22
21
560 mA
17
25 °C
16
85 °C
20
15
27
28
29
30
31
32
Frequency (GHz)
Rev. B
Dissipated Power vs. Freq. vs. IDQ
26
Pin = 18 dBm
27
28
29
30
31
32
Frequency (GHz)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
Output Power vs. Freq. vs. VD
41
Output Power vs. Freq. vs. Temp.
41
Temp
P
= 25
dBm
°C
in = 18
Pin = 18 dBm,
Temp = 25 °C
40
Output Power (dBm)
Output Power (dBm)
40
39
20 V
22 V
38
37
36
39
38
-40 °C
25 °C
85 °C
37
36
27
28
29
30
31
32
27
28
29
Frequency (GHz)
Output Power vs. Input Power vs. Temp.
42
31
32
Output Power vs. Input Power vs. Freq.
42
Temp = 25 °C
Frequency = 29 GHz
38
38
34
34
Output Power (dBm)
Output Power (dBm)
30
Frequency (GHz)
30
26
-40 °C
25 °C
22
85 °C
18
30
26
27.5 GHz
29 GHz
22
31 GHz
18
14
14
-12
-8
-4
0
4
8
12
16
20
24
-12
-8
-4
Input Power (dBm)
Output Power (dBm)
4
8
12
16
20
24
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
42
38
0
Frequency = 29 GHz,
Temp = 25 °C
34
30
26
280 mA
420 mA
22
560 mA
18
14
-12
-8
-4
0
4
8
12
16
20
24
Input Power (dBm)
Rev. B
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
PAE vs. Frequency vs. IDQ
28
Pin = 18 dBm,
Temp = 25 °C
Pin = 18 dBm,
Temp = 25 °C
22.0
26
21.5
24
Gain (dB)
Power Added Efficiency (%)
Power Gain vs. Frequency vs. IDQ
22.5
280 mA
22
420 mA
560 mA
21.0
280 mA
20.5
420 mA
560 mA
20
20.0
18
19.5
16
19.0
27
28
29
30
31
32
27
28
29
Frequency (GHz)
PAE vs. Freq. vs. Temp.
28
31
Pin = 18 dBm
22.0
26
21.5
Gain (dB)
24
22
20
-40 °C
20.5
-40 °C
25 °C
85 °C
18
21.0
20.0
25 °C
85 °C
19.5
16
19.0
27
28
29
30
31
32
27
28
29
Frequency (GHz)
30
31
Power Gain vs. Input Power vs. Temp.
38
Frequency = 29 GHz
Frequency = 29 GHz
24
34
20
30
Gain (dB)
Power Added Efficiency (%)
32
Frequency (GHz)
PAE vs. Input Power vs. Temp.
28
16
12
-40 °C
26
-40 °C
22
25 °C
8
25 °C
85 °C
85 °C
18
4
0
14
-12
-8
-4
0
4
8
12
16
20
24
-12
Input Power (dBm)
Rev. B
32
Power Gain vs. Freq. vs. Temp.
22.5
Temp
P
= 25
dBm
°C
in = 18
Power Added Efficiency (%)
30
Frequency (GHz)
-8
-4
0
4
8
12
16
20
24
Input Power (dBm)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
Drain Current vs. Frequency vs. VD
2.0
1.9
Gate Current vs. Frequency vs. VD
7.5
Pin = 18 dBm,
Temp = 25 °C
Pin = 18 dBm,
Temp = 25 °C
6.5
1.7
Gate Current (mA)
Drain Current (A)
1.8
20 V
1.6
22 V
1.5
1.4
1.3
5.5
4.5
3.5
2.5
1.5
1.2
1.1
0.5
1.0
-0.5
27
28
29
30
31
32
20 V
22 V
27
28
29
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
2.0
35
-40 °C
30
Gate Current (mA)
Drain Current (A)
32
Gate Current vs. Freq. vs. Temp.
40
1.8
1.7
1.6
1.5
1.4
-40 °C
1.3
25 °C
85 °C
25
20
15
25 °C
5
1.1
0
1.0
-5
28
29
30
31
25 °C
10
1.2
27
32
27
28
29
30
31
32
Frequency (GHz)
Drain Current vs. Input Power vs. Temp.
2.2
85 °C
Pin = 18 dBm, IG current limit set to 35 mA
Frequency (GHz)
Gate Current vs. Input Power vs. Temp.
40
Frequency = 29 GHz
Frequency = 29 GHz, IG current limit set to 35 mA
2.0
35
1.8
30
Gate Current (mA)
Drain Current (A)
31
Pin = 18 dBm
1.9
1.6
1.4
1.2
1.0
-40 °C
0.8
25 °C
25
20
15
-40 °C
25 °C
10
85 °C
85 °C
0.6
5
0.4
0
-12
-8
-4
0
4
8
12
16
20
24
-12
Input Power (dBm)
Rev. B
30
Frequency (GHz)
-8
-4
0
4
8
12
16
20
24
Input Power (dBm)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
AM-PM (Delta) vs. Output Power vs. Temp.
2
0
1
-2
0
+85 °C
+25 °C
-1
-2
-3
-4
AM-PM (Delta) vs. Output Power vs. Temp.
2
Freq. = 29 GHz
Phase Delta (degrees)
Phase Delta (degrees)
3
-5
-4
-6
+85 °C
-8
+25 °C
-10
-12
-14
Freq. = 29 GHz,
IDQ = 280 mA
-16
-6
-18
22
24
26
28
30
32
34
36
38
40
22
24
26
28
Output Power (dBm)
AM-PM vs. Output Power vs. Temp.
32
34
36
38
40
AM-PM vs. Output Power vs. Temp.
15
Freq. = 29 GHz
10
-5
Phase (degrees)
Phase (degrees)
0
30
Output Power (dBm)
-10
-15
5
0
-5
+85 °C
+25 °C
+85 °C
-20
-10
+25 °C
Freq. = 29 GHz,
IDQ = 280 mA
-25
-15
22
24
26
28
30
32
34
36
38
40
22
24
26
28
Output Power (dBm)
AM-PM vs. Frequency vs. PIN
180
32
34
36
38
40
AM-PM vs. Frequency vs. PIN
180
20 dBm
Temp = 25 °C
140
18 dBm
140
100
16 dBm
100
Phase (degrees)
Phase (degrees)
30
Output Power (dBm)
0 dBm
60
20
-20
Temp = 25 °C,
IDQ = 280 mA
60
20
-20
-60
-60
-100
-100
18 dBm
-140
-140
16 dBm
-180
-180
20 dBm
0 dBm
26
28
30
32
34
26
Output Power (dBm)
Rev. B
28
30
32
34
Output Power (dBm)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Typical Performance – Linearity
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
IM3 vs. Output Power vs. Frequency
-20
10 MHz Tone Spacing, Temp = 25 °C
-25
10 MHz Tone Spacing, Temp = 25 °C
-45
-30
-50
-35
29 GHz
-45
27 GHz
-55
27 GHz
-40
IM5 (dBc)
IM3 (dBc)
IM5 vs. Output Power vs. Frequency
-40
31 GHz
-50
29 GHz
-60
31 GHz
-65
-70
-55
-60
-75
-65
-80
-70
-85
5
10
15
20
25
30
35
5
10
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temp.
-20
-55
-40 °C
-40
IM5 (dBc)
IM3 (dBc)
30
35
-50
-35
25 °C
-45
85 °C
-50
-40 °C
25 °C
-60
85 °C
-65
-70
-55
-60
-75
-65
-80
-70
-85
5
10
15
20
25
30
35
5
10
Output Power per Tone (dBm)
-30
20
25
30
35
IM5 vs. Output Power vs. IDQ
-30
10 MHz Tone Spacing,
Freq = 29 GHz,
Temp = 25 °C
-25
15
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
-20
10 MHz Tone Spacing,
Freq = 29 GHz,
Temp = 25 °C
-35
-40
-45
-35
280 mA
420 mA
560 mA
-40
-45
IM5 (dBc)
IM3 (dBc)
25
10 MHz Tone Spacing,
Freq = 29 GHz
-45
-30
-50
-55
-50
280 mA
420 mA
560 mA
-55
-60
-65
-70
-60
-75
-65
-80
-70
-85
5
10
15
20
25
30
35
5
Output Power per Tone (dBm)
Rev. B
20
IM5 vs. Output Power vs. Temp.
-40
10 MHz Tone Spacing,
Freq = 29 GHz
-25
15
Output Power per Tone (dBm)
10
15
20
25
30
35
Output Power per Tone (dBm)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Typical Performance – Small Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
Gain vs. Frequency vs. Temperature
40
Gain vs. Frequency vs. Drain Current
32
38
30
36
28
32
S21 (dB)
S21 (dB)
34
30
28
26
26
24
22
24
-40 °C
280 mA
20
25 °C
22
420 mA
85 °C
560 mA
20
18
27
28
29
30
31
27
28
Frequency (GHz)
IRL vs. Frequency vs. Temperature
-5
-5
-10
-10
-15
-20
31
-15
-20
-40 °C
-25
280 mA
-25
25 °C
420 mA
85 °C
560 mA
-30
-30
27
28
29
30
31
27
28
Frequency (GHz)
29
30
ORL vs. Frequency vs. Drain Current
0
-5
-10
-10
S22 (dB)
-5
-15
-20
-15
280 mA
-20
420 mA
560 mA
-40 °C
-25
31
Frequency (GHz)
ORL vs. Frequency vs. Temperature
0
S22 (dB)
30
IRL vs. Frequency vs. Drain Current
0
S11 (dB)
S11 (dB)
0
29
Frequency (GHz)
-25
25 °C
85 °C
-30
-30
27
28
29
30
31
27
Frequency (GHz)
Rev. B
28
29
30
31
Frequency (GHz)
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Applications Information and Pin Layout
C3
10 uF
Vg
C2
0.1 uF
C11
0.1 uF
10
1
2
RF IN 3
9
8 RF OUT
7
6
4
5
C6
10 uF
C12
10 uF
C5
0.1 uF
C8
0.1 uF
Bias Up Procedure
Vd
C9
10 uF
Bias Down Procedure
1. Set ID limit to 2 A, IG limit to 35 mA
2. Apply −5 V to VG
3. Apply +20 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 560 mA (VG ~ −2.5 V Typ.).
5. Turn on RF supply
1. Turn off RF supply
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pad No.
Symbol
1,5
VG
3
2,4,7,9
RFIN
GND
6,10
VD
8
RFOUT
Rev. B
Description
Gate Voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
Input; matched to 50 Ω; DC blocked
Must be grounded on the PCB.
Drain voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
Output; matched to 50 Ω; DC blocked
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Assembly Drawing
Vg
VD
GND
GND
C12
C11
C3
C2
C5
C6
C8
C9
GND
GND
Vg
VD
PCB NOTES:
(1)
Both Top and Bottom Vd and Vg must be biased.
(2)
This PCB is non-standard, and requires PCB trace modification for 30 GHz performance optimization. See Gerber
files for detailed information.
Bill of Materials
Reference Des.
C2, C5, C8, C11
C3, C6, C9, C12 (1)
Value
0.1 μF
10 μF
Description
Cap, 0603, +50 V, 10 %, X7R
Cap, 1206, +50 V, 20 %, X5R
Manuf.
Various
Various
Part Number
–
–
Notes:
1. Capacitors in drain path should be removed for pulsed operation.
Rev. B
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2595-CP to the board.
3. To improve the thermal and RF performance, we recommend the following:
a. Apply thermal compound or 4 mils indium shim between the package and the board.
b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between
the heat sink and the board.
4. Apply solder to each pin of the TGA2595-CP.
5. Clean the assembly with alcohol.
Mechanical Information
1
10
2
9
3
4
5
8
7
6
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2595: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
Rev. B
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TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 1A
JEDEC Standard JESD22 A114
MSL – Convection Reflow 260 °C
Level 5A
JEDEC standard IPC/JEDEC JSTD-020.
Caution!
ESD-Sensitive Device
Solderability
Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo:
Web: www.qorvo.com
Email: info-sales@qorvo.com
Tel: +1.972.994.8465
Fax: +1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein.
Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or
liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and
with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses,
or any other intellectual property rights, whether with regard to such information itself or anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or
other applications where a failure would reasonably be expected to cause severe personal injury or death.
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