HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC326MS8G is ideal for:
Psat Output Power: +26 dBm
• Microwave Radios
> 40% PAE
• Broadband Radio Systems
Output IP3: +36 dBm
• Wireless Local Loop Driver Amplifier
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G is a high efficiency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
amplifier which operates between 3.0 and 4.5 GHz.
The amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The amplifier provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
amplifier is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Frequency Range
Gain
18
Gain Variation Over Temperature
Max.
Units
3.0 - 4.5
GHz
21
dB
0.025
0.035
dB / °C
Input Return Loss
12
dB
Output Return Loss
7
dB
23.5
dBm
26
dBm
36
dBm
5
dB
0.001 / 130
mA
7
mA
10
ns
Output Power for 1dB Compression (P1dB)
21
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
32
Noise Figure
Supply Current (Icc)
Vpd = 0V / 5V
Control Current (Ipd)
Switching Speed
8 - 98
Typ.
tOn/tOff
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
8
25
24
20
S21
S11
S22
5
0
-5
20
18
+25C
+85C
-40C
-10
-15
16
-20
2
2.5
3
3.5
4
4.5
5
5.5
3
6
3.25
3.5
P1dB vs. Temperature
4.25
4.5
30
+25C
+85C
-40C
28
28
Psat (dBm)
OUTPUT P1dB (dBm)
4
Psat vs. Temperature
30
26
24
22
26
24
+25C
+85C
-40C
22
20
20
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
FREQUENCY (GHz)
3.75
4
4.25
4.5
FREQUENCY (GHz)
Output IP3 vs. Temperature
Power Compression @ 3.5 GHz
40
Pout (dBm), Gain (dB), PAE (%)
45
+25C
+85C
-40C
38
OIP3 (dBm)
3.75
FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - SMT
22
10
GAIN (dB)
RESPONSE (dB)
15
36
34
32
30
40
35
30
25
20
15
10
Output Power (dBm)
Gain (dB)
PAE (%)
5
0
3
3.25
3.5
3.75
4
FREQUENCY (GHz)
4.25
4.5
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 99
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
0
INPUT RETURN LOSS (dB)
AMPLIFIERS - SMT
8
+25C
+85C
-40C
-5
-10
-15
-20
-3
-6
-9
+25C
+85C
-40C
-12
-15
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
FREQUENCY (GHz)
3.75
4
4.25
4.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
+25C
+85C
-40C
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
9
+25C
+85C
-40C
-10
-20
-30
-40
7
6
5
4
3
2
-50
1
-60
0
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
FREQUENCY (GHz)
3.75
4
FREQUENCY (GHz)
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
1.5
150
130
110
90
70
Icc (mA)
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
50
P1dB
Psat
Gain
30
Icc
10
2
2.5
3
3.5
4
4.5
5
Vpd (Vdc)
8 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4.25
4.5
MICROWAVE CORPORATION
HMC326MS8G
v04.1203
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Absolute Maximum Ratings
+5.5 Vdc
Control Voltage Range (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 11.49 mW/°C above 85 °C)
0.747 W
Thermal Resistance
(junction to ground paddle)
87 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
8
AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 101
MICROWAVE CORPORATION
v04.1203
HMC326MS8G
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Evaluation PCB
AMPLIFIERS - SMT
8
List of Material
Item
Description
J1 - J2
PC Mount SMA RF Connector
J3
2mm DC Header
C1 - C2
330 pF Capacitor, 0603 Pkg.
C3
0.7 pF Capacitor, 0603 Pkg.
C4
3.0 pF Capacitor, 0402 Pkg.
C5
2.2 µF Capacitor, Tantalum
L1
3.3 nH Inductor, 0805 Pkg.
U1
HMC326MS8G Amplifier
PCB*
104106 Eval Board
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A sufficient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
*Circuit Board Material: Rogers 4350
8 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
HMC326MS8G
v04.1203
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Application Circuit
AMPLIFIERS - SMT
8
Recommended Component Values
L1
3.3 nH
C1 - C2
330 pF
C3
0.7 pF
C4
3.0 pF
C5
2.2 µF
Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc).
Note 2: C2 should be located < 0.1” (2.54 mm) from L1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 103