TGS2355
0.5-6 GHz High Power GaN Switch
Applications
• High Power Switching
Product Features
Functional Block Diagram
Frequency Range: 0.5 - 6 GHz
Insertion Loss: < 1.3 dB
Power Handling: 100 W
Isolation: 40 dB typical
Control Voltages: 0 V/-40 V from either side of
the MMIC
• Reflective Switch
• Chip Dimensions: 2.14 x 2.50 x 0.1 mm
•
•
•
•
•
General Description
Pin Configuration
The TGS2355 is a single-pole, double-throw (SPDT)
reflective switch fabricated on TriQuint’s 0.25um GaN
on SiC production process. Operating from 0.5 to 6
GHz, the TGS2355 provides up to 100 W input power
handling with < 1 dB insertion over most of the
operating band and greater than 40 dB isolation.
The TGS2355 is available in a small 2.14 x 2.50 mm
die size and requires very little control current allowing
for easy system integration without impacting system
power budgets.
The TGS2355 is ideally suited for high power switching
applications across both defense and commercial
applications.
Lead-free and RoHS compliant.
Pin No.
Label
1
RFC
2, 7
3, 6
4
5
VC1
VC2
RF1
RF2
Ordering Information
Part No.
ECCN
Description
TGS2355
EAR99
0.5-6 GHz High Power
GaN Switch
Evaluation boards available on request.
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGS2355
0.5-6 GHz High Power GaN Switch
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation
RF Input Power (pulsed, 10% Duty
Cycle, 20us pulse width)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Storage Temperature
Rating
-50 V
-3.5 / +3.5 mA
36.8 W
51 dBm
275 °C
320 °C
-55 to 150 °C
Min
Frequency
Input Power Handling
(pulsed)
Control Voltage
Channel Temp., Tch
Typ
0.5
Max Units
6
GHz
≤ 50
dBm
-40
225
V
°C
Electrical specifications are measured at specified test
conditions.
Specifications are not guaranteed over all
recommended operating conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: Temp= +25°C. Z0 = 50 Ω, Vc=-40 V
Parameter
Min
Operational Frequency Range
Typ
0.5
Max
Units
6
GHz
P-0.1dB (pulsed)
50
dBm
Control Current (IC)
1.0
mA
Insertion Loss (On-State)
1.0
dB
Input Return Loss – On-State (Common Port RL)
15
dB
Output Return Loss – On-State (Switched Port RL)
15
dB
Isolation (Off-State)
40
dB
Output Return Loss – Off-State (Isolated Port RL)
2.5
dB
Control Voltage
-40
Insertion Loss Temperature Coefficient
Datasheet: Rev - 06-20-14
© 2014 TriQuint
0.003
- 2 of 12 -
-48
V
dB/ °C
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TGS2355
0.5-6 GHz High Power GaN Switch
Specifications
Thermal and Reliability Information
Parameter
Conditions
Thermal Resistance (θJC)
Value
Units
4.78
ºC/W
225
°C
1.56E06
Hrs
(1)
TBASE = 85 °C, VC1 = 0 V, VC2 = -40 V,
PIN = 100 W (CW), PDISS =29.3 W
Channel Temperature (TCH)
Median Lifetime (TM)
Notes:
1. MMIC soldered to 20 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temperature).
Median Lifetime
Median Lifetime, TM (Hours)
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
Median Lifetime vs. Channel Temperature
FET13
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (°C)
Peak Temperature vs. CW Power
1.5-mil AuSn Die Attach; Pkg base = 85 °C
245
Maximum Channel Temperature (°C)
245
Tch, max Temperature, °C
225
Tch,max for 20-mil CuMo Pkg Base
205
Recommended Limit for Tch, max
185
165
145
125
105
225
205
185
165
145
5% Duty Cycle
125
15
30
Datasheet: Rev - 06-20-14
© 2014 TriQuint
45
60
75
RF Input Power, Watts
90
10% Duty Cycle
20% Duty Cycle
105
85
0
Maximum Channel Temperature
20 mil CuMo, Tbase = 85 °C, Pin = 100W
105
- 3 of 12 -
85
1.0E-06
50% Duty Cycle
1.0E-05
1.0E-04 1.0E-03 1.0E-02
Pulse Width (sec)
1.0E-01 1.0E+00
Disclaimer: Subject to change without notice
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TGS2355
0.5-6 GHz High Power GaN Switch
Typical Performance (Tuned EVB)
Test conditions unless otherwise noted: VC1 = 0 V, VC2 = -40 V, CW Input, Temp= +25 °C
Insertion Loss vs. Frequency
0.0
VC1 = 0V, RF1 Path On
-0.5
-0.5
-1.0
-1.0
-1.5
-1.5
S21 (dB)
S21, S31 (dB)
Insertion Loss vs. Freq. vs. VC2
0.0
Temp.= 25 °C
-2.0
-2.5
-2.0
-2.5
VC2 = -35 V
-3.0
-3.0
VC2 = -40 V
RF1 Path (S21) On
RF2 Path (S31) On
-3.5
-3.5
VC2 = -45V
-4.0
-4.0
0
1
2
3
4
5
6
7
0
8
1
2
Insertion Loss vs. Freq. vs. Temp.
0.0
-1.0
-20
S21, S31 (dB)
S21 (dB)
-10
-1.5
-2.0
- 40 °C
+25 °C
6
7
8
7
8
7
8
-30
-40
-50
-60
+85 °C
RF2 Path (S31) Off
RF1 Path (S21) Off
-70
-3.5
-80
-4.0
0
1
2
3
4
5
6
7
0
8
1
2
Return Loss vs. Frequency
0
3
4
5
6
Frequency (GHz)
Frequency (GHz)
Return Loss vs. Frequency
0.0
Temp. = 25 °C
Temp. = 25 °C
-0.5
-5
-1.0
RFC (S11)
RF1 Path (S22) On
RF2 Path (S33) On
-10
S22, S33 (dB)
Return Loss (dB)
5
Temp.= 25 °C
VC1 = 0V, VC2 = -40 V, RF1 Path ON
-3.0
4
Isolation vs. Frequency
0
-0.5
-2.5
3
Frequency (GHz)
Frequency (GHz)
-15
-20
-25
-30
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
RF2 Path (S33) Off
-4.5
RF1 Path (S33) Off
-5.0
0
1
2
3
4
5
6
7
8
Datasheet: Rev - 06-20-14
© 2014 TriQuint
0
1
2
3
4
5
6
Frequency (GHz)
Frequency (GHz)
- 4 of 12 -
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TGS2355
0.5-6 GHz High Power GaN Switch
Typical Performance (Tuned EVB)
Test conditions unless otherwise noted: VC1 = 0 V, VC2 = -40 V, Pulsed RF Input PW=20 usec, Duty Cycle=10%, Temp= +25 °C
0.10
Compression vs. Pin vs. Freq.
0.05
VC1 = 0 V, VC2 = -40 V, Temp. = 25 °C
0.05
Compression (dB)
Compression (dB)
Compression vs. Pin vs. Freq.
0.10
VC1 = 0 V, VC2 = -40 V, Temp. = 25 °C
0.00
-0.05
-0.10
-0.15
-0.20
0.1 GHz
0.3 GHz
0.5 GHz
-0.25
0.00
-0.05
-0.10
-0.15
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
-0.20
0.2 GHz
0.4 GHz
1.0 GHz
-0.25
-0.30
-0.30
30
32
34
36
38
40
42
44
46
48
30
50
32
34
Compression vs. Pin vs. Temp.
0.10
38
40
42
44
46
48
50
48
50
Compression vs. Pin vs. VC
0.10
VC1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 °C
VC1 = 0 V, VC2 = -40 V, Freq. = 3.0 GHz
0.05
Compression (dB)
0.05
Compression (dB)
36
Input Power (dBm)
Input Power (dBm)
0.00
-0.05
-0.10
- 40 °C
-0.15
+25 °C
-0.20
0.00
-0.05
-0.10
-0.15
VC2 = -35 V
VC2 = -40 V
-0.20
+85 °C
-0.25
VC2 = -45 V
-0.25
-0.30
-0.30
30
32
34
36
38
40
42
44
46
48
50
30
Input Power (dBm)
Datasheet: Rev - 06-20-14
© 2014 TriQuint
32
34
36
38
40
42
44
46
Input Power (dBm)
- 5 of 12 -
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TGS2355
0.5-6 GHz High Power GaN Switch
Application Circuit
Notes:
DC blocking capacitors are required on all RF ports.
VC1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.
VC2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one
unused RF switched port with a 50 Ohm load.
Function Table
RF Path
RFC to RF1
RFC to RF2
Datasheet: Rev - 06-20-14
© 2014 TriQuint
State
VC1
VC2
On-State (Insertion Loss)
0V
-40 V
Off-State (Isolation)
-40 V
0V
On-State (Insertion Loss)
-40 V
0V
0V
-40 V
Off-State (Isolation)
- 6 of 12 -
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TGS2355
0.5-6 GHz High Power GaN Switch
Applications Information
Evaluation Board Layout
RF Layer is 0.010” thick Rogers Corp. RO4350B, εr =
3.66. Metal layers are 0.5 oz. copper. The microstrip
line at the connector interface is optimized for the
Southwest Microwave end launch connector 109202A-5.
The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary from
company to company, careful process development
is recommended.
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 7 of 12 -
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TGS2355
0.5-6 GHz High Power GaN Switch
Mounting Detail
MMIC EVB Mounting Detail
Notes:
1. MMIC is mounted directly to the carrier plate in a cut-out area of the EVB.
2. Flares (as shown) on RF transmission lines are required to achieve best electrical performance.
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 8 of 12 -
Disclaimer: Subject to change without notice
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TGS2355
0.5-6 GHz High Power GaN Switch
Mechanical Drawing and Bond Pad Description
Pin No.
Label
Description
Pad Size (um)
1
RFC
Common RF Port, DC coupled
2, 7
VC1
Control 1
75 x 75
3, 6
VC2
Control 2
75 x 75
4
RF1
RF switched port 1, DC coupled
100 x 200
5
RF2
RF switched port 2, DC coupled
100 x 200
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 9 of 12 -
100 x 200
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TGS2355
0.5-6 GHz High Power GaN Switch
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes,
maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Organic adhesive attachment assembly notes:
• Organic adhesives such as epoxy or polyimide can be used.
• Epoxies cure at temperatures of 100 °C to 200 ° C.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic conditions are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 10 of 12 -
Disclaimer: Subject to change without notice
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TGS2355
0.5-6 GHz High Power GaN Switch
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating:
Value:
Test:
Standard:
Solderability
Use only AuSn (80/20) solder and limit exposure to
temperatures above 300 °C to 3-4 minutes, maximum.
TBD
TBD
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ECCN
US Department of Commerce: EAR99
RoHS-Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
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TGS2355
0.5-6 GHz High Power GaN Switch
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated
with such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 12 of 12 -
Disclaimer: Subject to change without notice
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