New Product TSSP58P38 www.vishay.com Vishay Semiconductors IR Receiver Modules for Mid Range Proximity Sensors FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for burst frequency • Improved shielding against EMI • Supply voltage: 2.5 V to 5.5 V • Improved immunity against ambient light • Insensitive to supply voltage ripple and noise • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 19026 DESCRIPTION MECHANICAL DATA The TSSP58P38 series are miniaturized receivers for Mid range proximity sensor systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an IR filter. Pinning 1 = OUT, 2 = GND, 3 = VS The output pulse width of the TSSP58P38 has an almost linear relationship to the distance of the emitter or the distance of an reflecting object. The TSSP58P38 is optimized to suppress almost all spurious pulses from energy saving fluorescent lamps. Please see the document “Product Transition Schedule” at www.vishay.com/ir-receiver-modules/ for up-to-date info, when this product will be released. This component has not been qualified according to automotive specifications. PARTS TABLE CARRIER FREQUENCY MID RANGE SENSOR 38 kHz (1) TSSP58P38 Note (1) Other frequencies available by request BLOCK DIAGRAM APPLICATION CIRCUIT 17170-10 16833_5 3 VS 1 Input AGC Band pass Demodulator R1 IR receiver VS Circuit 33 kΩ Transmitter with TSALxxxx + VS C1 µC OUT OUT GND VO GND 2 PIN Rev. 1.1, 09-Mar-12 Control circuit The external components R1 and C1 are optional to improve the robustness against electrical overstress (typical values are R1 = 100 Ω, C1 = 0.1 µF). GND 1 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product TSSP58P38 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VS - 0.3 to + 6 V Supply voltage (pin 3) Supply current (pin 3) IS 5 mA Output voltage (pin 1) VO - 0.3 to 5.5 V VS - VO - 0.3 to (VS + 0.3) V IO 5 mA Voltage at output to supply Output current (pin 1) Tj 100 °C Storage temperature range Junction temperature Tstg - 25 to + 85 °C Operating temperature range Tamb - 25 to + 85 °C Tamb ≤ 85 °C Ptot 10 mW t ≤ 10 s, 1 mm from case Tsd 260 °C Power consumption Soldering temperature Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect the device reliability. ELECTRICAL AND OPTICAL CHARACTERSTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Supply current (pin 3) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Ev = 0, VS = 5 V ISD 0.55 0.7 0.9 mA Ev = 40 klx, sunlight ISH Supply voltage 0.8 VS 2.5 Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA d IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min. Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max. Directivity Angle of half transmission distance ϕ1/2 Transmission distance Output voltage low (pin 1) mA 5.5 V 40 m 0.2 100 mV 0.4 mW/m2 W/m2 50 ± 45 deg TYPICAL CHARACTERSTICS (Tamb = 25 °C, unless otherwise specified) Optical Test Signal 1.0 (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) 0.9 tpo - Output Pulse Width (ms) Ee t tpi * * tpi VO T 10/f0 is recommended for optimal function Output Signal 1) 2) VOH 16110 7/f0 < td < 15/f0 tpi - 5/f0 < tpo < tpi + 6/f 0 VOL td 1) tpo 2) Input Burst Length 0.7 0.6 0.5 0.4 0.3 0.2 λ = 950 nm, Optical Test Signal, Fig.1 0.1 1 10 102 Ee - Irradiance Fig. 1 - Output Active Low Rev. 1.1, 09-Mar-12 0.8 0 0.1 t Output Pulse Width 103 104 (mW/m2) Fig. 2 - Pulse Length and Sensitivity in Dark Ambient 2 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product TSSP58P38 www.vishay.com Vishay Semiconductors 600 µs Ee min. - Threshold Irradiance (mW/m2) Optical Test Signal Ee t 600 µs t = 60 ms 94 8134 Output Signal, (see fig. 4) VO VOH VOL t off t on 5.0 Correlation with Ambient Light Sources: 4.5 10 W/m2 = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m2 = 8.2 kLx (Daylight, T = 5900 K) 4.0 3.5 2.5 2.0 1.5 1.0 0.5 0 0.01 t Ee min. - Threshold Irradiance (mW/m2) ton, toff - Output Pulse Width (ms) ton 0.6 toff 0.4 0.3 0.2 λ = 950 nm, optical test signal, Fig. 1 0.1 0 0.1 1 10 100 Ee - Irradiance 1000 10 100 1.0 f = f0 0.9 0.8 0.7 f = 30 kHz 0.6 0.5 f = 20 kHz 0.4 f = 10 kHz 0.3 0.2 0.1 f = 100 Hz 0 1 10 000 10 100 1000 ΔVsRMS - AC Voltage on DC Supply Voltage (mV) (mW/m2) Fig. 4 - Output Pulse Diagram Fig. 7 - Sensitivity vs. Supply Voltage Disturbances 1.2 200 tpo - Output Pulse Width (ms) E e min./Ee - Rel. Responsivity 1 Fig. 6 - Sensitivity in Bright Ambient 0.8 0.5 0.1 Ee - Ambient DC Irradiance (W/m2) Fig. 3 - Output Function 0.7 Wavelength of Ambient Illumination: λ = 950 nm 3.0 1.0 0.8 0.6 0.4 f = f0 ± 5 % Δ f(3 dB) = f0/10 0.2 180 160 140 120 100 80 60 40 Burst length = 300 ms, f = fO 20 0.0 0 0.7 16925 0.9 1.1 0.1 1.3 22088 f/f0 - Relative Frequency Fig. 5 - Frequency Dependence of Responsivity Rev. 1.1, 09-Mar-12 1 10 100 Ee - Irradiance (mW/m2) Fig. 8 - Maximum Output Pulse Width vs. Irradiance 3 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product TSSP58P38 www.vishay.com Vishay Semiconductors 0° 0.40 10° 20° 30° Ee min. - Sensitivity (mW/m2) 0.35 0.30 40° 0.25 1.0 0.20 0.9 50° 0.8 60° 0.15 0.10 70° 0.7 0.05 80° 0 - 30 - 10 10 30 50 70 90 0.6 Tamb - Ambient Temperature (°C) 0.4 Fig. 9 - Sensitivity vs. Ambient Temperature 0 Fig. 12 - Vertical Directivity 0.8 Ee min. - Sensitivity (mW/m2) 1.2 S (λ)rel - Relative Spectral Sensitivity 0.2 d rel - Relative Transmission Distance 19259 1.0 0.8 0.6 0.4 0.2 0 750 850 1050 950 10° 0.5 0.4 0.3 0.2 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS - Supply Voltage (V) Fig. 10 - Relative Spectral Sensitivity vs. Wavelength 0° 0.6 0 1.5 1150 λ - Wavelength (nm) 94 8408 0.7 Fig. 13 - Sensitivity vs. Supply Voltage 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 19258 0.4 0.2 0 drel - Relative Transmission Distance Fig. 11 - Horizontal Directivity Rev. 1.1, 09-Mar-12 4 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product TSSP58P38 www.vishay.com Vishay Semiconductors The typical application of the TSSP58P38 is a reflective sensor with analog information contained in its output. Such a sensor is evaluating the time required by the AGC to suppress a quasi continuous signal. The time required to suppress such a signal is longer when the signal is strong than when the signal is weak, resulting in a pulse length corresponding to the distance of an object from the sensor. This kind of analog information can be evaluated by a microcontroller. The absolute amount of reflected light depends much on the environment and is not evaluated. Only sudden changes of the amount of reflected light, and therefore changes in the pulse width, are evaluated using this application. Example of a signal pattern: 500 ms 120 ms, 38 kHz Optical signal Response of the TSSP58P38 (strong reflection) Response of the TSSP58P38 (weak reflection) Example for a sensor hardware: 120 Emitter TSAL6200 Output Pulse Widht (ms) IR Receiver TSSP58P38 Separation to avoid crosstalk by stray light inside the housing There should be no common window in front of the emitter and receiver in order to avoid crosstalk by guided light through the window. 80 60 Emitter current: 10 mA 40 20 Emitter current: 2 mA 0 0 The logarithmic characteristic of the AGC in the TSSP58P38 results in an almost linear relationship between distance and pulse width. Ambient light has also some impact to the pulse width of this kind of sensor, making the pulse shorter. Rev. 1.1, 09-Mar-12 IR Emitter: TSAL6200 Receiver: TSSP58P38 Reflective object: paper DIN A4 100 0.2 0.4 0.6 0.8 1.0 Distance of a Reflective Object (m) Fig. 14 - Distance Characterisitic of a Typical Reflective Sensor using the TSSP58P38 5 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product TSSP58P38 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 4.8 (4) 2.8 (5.55) 6.95 ± 0.3 8.25 ± 0.3 R2 0.9 1.1 30.5 ± 0.5 (1.54) 0.85 max. 0.7 max. 2.54 nom. 2.54 nom. 0.5 max. 1.2 ± 0.2 Marking area technical drawings according to DIN specifications Not indicated to lerances ± 0.2 Drawing-No.: 6.550-5263.01-4 Issue: 12; 16.04.10 19009 Rev. 1.1, 09-Mar-12 R2 6 Document Number: 82476 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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