Si4482DY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100
ID (A)
0.060 at VGS = 10 V
4.6
0.080 at VGS = 6 V
4.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4482DY-T1-E3 (Lead (Pb)-free)
Si4482DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
ID
V
4.6
3.7
IDM
40
IS
2.1
PD
Unit
2.5
1.6
A
W
TJ, Tstg
- 55 to 150
Symbol
Limit
Unit
RthJA
50
°C/W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70749
S09-0767-Rev. C, 04-May-09
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Si4482DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Typ.a
Symbol
Test Conditions
Min.
Max.
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
20
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltage
b
VDS = 5 V, VGS = 10 V
V
20
µA
A
VGS = 10 V, ID = 4.6 A
0.045
0.060
VGS = 6 V, ID = 4.0 A
0.050
0.080
gfs
VDS = 15 V, ID = 4.6 A
20
VSD
IS = 2.1 A, VGS = 0 V
RDS(on)
nA
Ω
S
1.2
V
a
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
30
VDS = 50 V, VGS = 10 V, ID = 4.6 A
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
7
1
td(on)
tr
50
7.5
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 2.1 A, dI/dt = 100 A/µs
4.4
13
25
12
25
60
90
25
40
50
80
Ω
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70749
S09-0767-Rev. C, 04-May-09
Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
40
VGS = 10 V thru 6 V
32
I D - Drain Current (A)
I D - Drain Current (A)
30
5V
20
24
16
TC = 125 °C
10
8
1 V, 2 V, 3 V
0
0.0
25 °C
4V
- 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
VDS - Drain-to-Source Voltage (V)
2500
0.08
2000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
4
5
6
Transfer Characteristics
0.10
VGS = 6 V
VGS = 10 V
0.04
3
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.06
2
Ciss
1500
1000
0.02
500
0.00
0
Coss
Crss
0
10
20
30
0
40
20
40
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2.5
10
VDS = 50 V
ID = 4.6 A
2.0
6
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
60
VGS = 10 V
ID = 4.6 A
1.5
1.0
0.5
2
0
0
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70749
S09-0767-Rev. C, 04-May-09
24
30
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
40
10
TJ = 150 °C
TJ = 25 °C
0.08
ID = 4.6 A
0.06
0.04
0.02
0.00
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
50
0.6
0.3
40
0.0
ID = 250 µA
Power (W)
VGS(th) Variance (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 0.3
30
20
- 0.6
10
- 0.9
- 1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
10.00
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 50 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
t1
t2
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
4. Surface Mounted
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70749.
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Document Number: 70749
S09-0767-Rev. C, 04-May-09
Legal Disclaimer Notice
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Revision: 13-Jun-16
1
Document Number: 91000