Silicon PIN Photodiode, RoHS Compliant BPV10

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BPV10
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Radiant sensitive area (in mm2): 0.78
• High photo sensitivity
• High radiant sensitivity
94 8390
• Suitable for visible and near infrared radiation
• High bandwidth: 250 MHz at VR = 12 V
• Fast response times
DESCRIPTION
• Angle of half sensitivity: ϕ = ± 20°
BPV10 is a PIN photodiode with high speed and high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
Ira (mA)
ϕ (deg)
λ0.1 (nm)
70
± 20
380 to 1100
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
COMPONENT
BPV10
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPV10
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
SYMBOL
VALUE
VR
10
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from body
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81502
Rev. 1.6, 08-Sep-08
BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
IF = 50 mA
VF
IR = 100 µA, E = 0
V(BR)
MIN.
TYP.
MAX.
1.0
1.3
UNIT
V
60
V
VR = 20 V, E = 0
Iro
1
VR = 0 V, f = 1 MHz, E = 0
CD
11
pF
VR = 5 V, f = 1 MHz, E = 0
CD
3.8
pF
5
nA
EA = 1 klx
VO
480
mV
Ee = 1 mW/cm2, λ = 950 nm
VO
450
mV
EA = 1 klx
IK
80
µA
Ee = 1
Reverse light current
SYMBOL
mW/cm2,
λ = 950 nm
IK
65
µA
EA = 1 klx, VR = 5 V
Ira
85
µA
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
70
µA
VR = 5 V, λ = 950 nm
Absolute spectral sensitivity
38
s(λ)
0.55
A/W
Angle of half sensitivity
ϕ
± 20
deg
Wavelength of peak sensitivity
λp
920
nm
nm
λ0.1
380 to 1100
λ = 950 nm
η
72
%
Noise equivalent power
VR = 20 V, λ = 950 nm
NEP
3 x 10-14
W/√Hz
Detectivity
VR = 20 V, λ = 950 nm
D
3 x 1012
cm√Hz/W
Rise time
VR = 50 V, RL = 50 Ω, λ = 820 nm
tr
2.5
ns
Fall time
VR = 50 V, RL = 50 Ω, λ = 820 nm
tf
2.5
ns
Range of spectral bandwidth
Quantum efficiency
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Ira, rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 20 V
1
20
94 8436
40
60
80
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Tamb - Ambient Temperature (°C)
Document Number: 81502
Rev. 1.6, 08-Sep-08
1.4
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: detectortechsupport@vishay.com
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BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
S ( λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
Ira - Reverse Light Current (µA)
0.6
0.4
0.2
0
350
550
750
1150
950
λ - Wavelength (nm)
94 8440
Fig. 3 - Reverse Light Current vs. Irradiance
100
0.8
10
1
E e - Irradiance (mW/cm 2)
94 8437
1.0
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
1 mW/cm2
0.5 mW/cm2
λ = 950 nm
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
0.02 mW/cm2
ϕ - Angular Displacement
0.1
0.01
Srel - Relative Sensitivity
Ira - Reverse Light Current (µA)
1000
80°
1
0.1
1
100
10
0.6
0.4
0.2
0
94 8624
VR - Reverse Voltage (V)
94 8438
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
12
10
E=0
f = 1 MHz
8
6
4
2
0
0.1
94 8439
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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336
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81502
Rev. 1.6, 08-Sep-08
BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
5.75
± 0.15
PACKAGE DIMENSIONS in millimeters
C
± 0.15
Chip position
R 2.45 (sphere)
± 0.15
7.6
± 0.3
8.6
+ 0.2
- 0.1
+ 0.2
- 0.1
0.63
+ 0.2
- 0.1
Area not plane
0.5
+ 0.15
1.5
± 0.25
1
0.8
< 0.7
34.8
± 0.5
11.8
± 0.3
(4.3)
Ø5
A
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5185.02-4
Issue:1; 01.07.96
96 12199
Document Number: 81502
Rev. 1.6, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
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337
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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