BPV10
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Radiant sensitive area (in mm2): 0.78
• High photo sensitivity
• High radiant sensitivity
94 8390
• Suitable for visible and near infrared radiation
• High bandwidth: 250 MHz at VR = 12 V
• Fast response times
DESCRIPTION
• Angle of half sensitivity: ϕ = ± 20°
BPV10 is a PIN photodiode with high speed and high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
Ira (mA)
ϕ (deg)
λ0.1 (nm)
70
± 20
380 to 1100
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
COMPONENT
BPV10
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPV10
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
SYMBOL
VALUE
VR
10
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from body
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81502
Rev. 1.6, 08-Sep-08
BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
IF = 50 mA
VF
IR = 100 µA, E = 0
V(BR)
MIN.
TYP.
MAX.
1.0
1.3
UNIT
V
60
V
VR = 20 V, E = 0
Iro
1
VR = 0 V, f = 1 MHz, E = 0
CD
11
pF
VR = 5 V, f = 1 MHz, E = 0
CD
3.8
pF
5
nA
EA = 1 klx
VO
480
mV
Ee = 1 mW/cm2, λ = 950 nm
VO
450
mV
EA = 1 klx
IK
80
µA
Ee = 1
Reverse light current
SYMBOL
mW/cm2,
λ = 950 nm
IK
65
µA
EA = 1 klx, VR = 5 V
Ira
85
µA
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
70
µA
VR = 5 V, λ = 950 nm
Absolute spectral sensitivity
38
s(λ)
0.55
A/W
Angle of half sensitivity
ϕ
± 20
deg
Wavelength of peak sensitivity
λp
920
nm
nm
λ0.1
380 to 1100
λ = 950 nm
η
72
%
Noise equivalent power
VR = 20 V, λ = 950 nm
NEP
3 x 10-14
W/√Hz
Detectivity
VR = 20 V, λ = 950 nm
D
3 x 1012
cm√Hz/W
Rise time
VR = 50 V, RL = 50 Ω, λ = 820 nm
tr
2.5
ns
Fall time
VR = 50 V, RL = 50 Ω, λ = 820 nm
tf
2.5
ns
Range of spectral bandwidth
Quantum efficiency
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Ira, rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 20 V
1
20
94 8436
40
60
80
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Tamb - Ambient Temperature (°C)
Document Number: 81502
Rev. 1.6, 08-Sep-08
1.4
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: detectortechsupport@vishay.com
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BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
S ( λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
Ira - Reverse Light Current (µA)
0.6
0.4
0.2
0
350
550
750
1150
950
λ - Wavelength (nm)
94 8440
Fig. 3 - Reverse Light Current vs. Irradiance
100
0.8
10
1
E e - Irradiance (mW/cm 2)
94 8437
1.0
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
1 mW/cm2
0.5 mW/cm2
λ = 950 nm
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
0.02 mW/cm2
ϕ - Angular Displacement
0.1
0.01
Srel - Relative Sensitivity
Ira - Reverse Light Current (µA)
1000
80°
1
0.1
1
100
10
0.6
0.4
0.2
0
94 8624
VR - Reverse Voltage (V)
94 8438
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
12
10
E=0
f = 1 MHz
8
6
4
2
0
0.1
94 8439
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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336
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81502
Rev. 1.6, 08-Sep-08
BPV10
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
5.75
± 0.15
PACKAGE DIMENSIONS in millimeters
C
± 0.15
Chip position
R 2.45 (sphere)
± 0.15
7.6
± 0.3
8.6
+ 0.2
- 0.1
+ 0.2
- 0.1
0.63
+ 0.2
- 0.1
Area not plane
0.5
+ 0.15
1.5
± 0.25
1
0.8
< 0.7
34.8
± 0.5
11.8
± 0.3
(4.3)
Ø5
A
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5185.02-4
Issue:1; 01.07.96
96 12199
Document Number: 81502
Rev. 1.6, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
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337
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Document Number: 91000
Revision: 18-Jul-08
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