BPW34, BPW34S
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
94 8583
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
APPLICATIONS
BPW34 is a PIN photodiode with high speed and high radiant
sensitivity in miniature, flat, top view, clear plastic package. It
is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
• High speed photo detector
with
PRODUCT SUMMARY
Ira (µA)
ϕ (deg)
λ0.1 (nm)
BPW34
50
± 65
430 to 1100
BPW34S
50
± 65
430 to 1100
PACKAGE FORM
COMPONENT
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
BPW34
Bulk
MOQ: 3000 pcs, 3000 pcs/bulk
Top view
BPW34S
Tube
MOQ: 1800 pcs, 45 pcs/tube
Top view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
60
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t≤3s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
UNIT
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81521
Rev. 2.0, 08-Sep-08
BPW34, BPW34S
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Breakdown voltage
IR = 100 µA, E = 0
V(BR)
60
TYP.
MAX.
UNIT
VR = 10 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR = 3 V, f = 1 MHz, E = 0
CD
25
Reverse dark current
Diode capacitance
mW/cm2,
λ = 950 nm
V
pF
40
pF
Open circuit voltage
Ee = 1
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
EA = 1 klx
Ik
70
µA
Ee = 1 mW/cm2, λ = 950 nm
Ik
47
µA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
EA = 1 klx, VR = 5 V
Ira
75
µA
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
50
µA
40
Ira
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
900
nm
λ0.1
430 to 1100
nm
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Range of spectral bandwidth
Noise equivalent power
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Ira, rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Tamb - Ambient Temperature (°C)
Document Number: 81521
Rev. 2.0, 08-Sep-08
1.4
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: detectortechsupport@vishay.com
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387
BPW34, BPW34S
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
80
CD - Diode Capacitance (pF)
Ira - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1
40
20
0
0.1
10
Ee - Irradiance (mW/cm2)
94 8417
E=0
f = 1 MHz
60
1
10
100
VR - Reverse Voltage (V)
948407
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 3 - Reverse Light Current vs. Irradiance
S ( λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
1
0.1
101
102
103
0.8
0.6
0.4
0.2
0
104
EA - Illuminance (lx)
94 8418
1.0
350
550
Fig. 4 - Reverse Light Current vs. Illuminance
750
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
1 mW/cm2
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
1150
950
λ - Wavelength (nm)
94 8420
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
1
0.1
94 8419
1
10
0.9
50°
0.8
60°
VR - Reverse Voltage (V)
70°
0.7
100
Fig. 5 - Reverse Light Current vs. Reverse Voltage
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40°
1.0
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81521
Rev. 2.0, 08-Sep-08
BPW34, BPW34S
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
96 12186
TUBE PACKAGING DIMENSIONS in millimeters
10.7
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
9.5
214.5
Stopper
18800
Fig. 9 - Drawing Proportions not scaled
Document Number: 81521
Rev. 2.0, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
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389
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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