Let Performance Drive
CMD184
0.5-20 GHz GaN Power Amplifier
Features
Applications
► Ultra wideband performance
► High Output Power
► High Gain
► High Linearity
► Microwave radio and VSAT
► Telecom infrastructure
► Test instrumentation
► Military and space
Description
Functional Block Diagram
The CMD184 is a 4.5 W wideband GaN
MMIC power amplifier die which operates
from 0.5 to 20 GHz. The amplifier delivers
greater than 13 dB of gain with a
corresponding output 1 dB compression
point of +34.5 dBm and a saturated output
power of +36.5 dBm. The CMD184 is a 50
ohm matched design which eliminates the
need for RF port matching. The CMD184
offers full passivation for increased
reliability and moisture protection.
Vgg2
ACG1
2
3
RFOUT & Vdd
4
RFIN
1
6
5
ACG2
Vgg1
Electrical Performance - Vdd = 28 V, Vgg 1= -2.8 V, Vgg 2= 10 V, TA = 25 oC, F=10 GHz
Parameter
Min
Frequency Range
Typ
Max
Units
0.5 - 20
GHz
Gain
13
dB
Input Return Loss
19
dB
Output Return Loss
25
dB
P1dB
34.5
dBm
Psat
36.5
dBm
Supply Current
700
mA
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD184
0.5-20 GHz GaN Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Parameter
Min
Typ
Max
Units
Drain Voltage, Vdd
40 V
Vdd
28
V
Gate Voltage, Vgg1
-10 V
Idd
700
mA
Gate Voltage, Vgg2
1/3 Vdd to
2/3 Vdd
Vgg1
-2.8
V
Vgg2
10
V
RF Input Power
+30 dBm
Channel Temperature, Tch
Power Dissipation, Pdiss
Thermal Resistance
Electrical performance is measured at specific
test conditions. Electrical specifications are not
guaranteed over all recommended operating
conditions.
175 °C
72 W
1.25 °C/W
Operating Temperature
-55 to 85 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the maximum
ratings may cause permanent damage.
Electrical Specifications, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V, TA = 25 oC
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
0.5 - 12
10
12.5
9.5
Typ
Max
Units
12 - 20
GHz
13
dB
Input Return Loss
15
15
dB
Output Return Loss
18
20
dB
32.5
dBm
41
dBm
Output P1dB
32
Output IP3
34.5
29
42
Supply Current
Gain Temperature
Coefficient
500
700
0.012
750
500
700
750
0.02
mA
dB/°C
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD184
0.5-20 GHz GaN Power Amplifier
Typical Performance
Broadband Performance, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V, Idd = 700 mA, TA = 25 oC
15
S11
S22
10
S21
Response/dB
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Frequency/GHz
Narrow-band Performance, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V, Idd = 700 mA, TA = 25 oC
15
10
Response/dB
5
S11
0
S22
S21
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.2 0116
CMD184
0.5-20 GHz GaN Power Amplifier
Typical Performance
Gain vs. Temperature, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V
20
19
+25C
18
+85C
-55C
17
16
15
14
13
Gain/dB
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Output Power, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V, TA = 25 oC
40
39
P1dB
38
Psat
37
36
35
34
Response/dBm
33
32
31
30
29
28
27
26
25
24
23
22
21
20
2
4
6
8
10
12
14
16
18
20
Frequency/GHz
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.2 0116
CMD184
0.5-20 GHz GaN Power Amplifier
Typical Performance
P1dB vs. Temperature, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V
40
39
+25C
+85C
-55C
38
37
36
35
34
P1dB/dBm
33
32
31
30
29
28
27
26
25
24
23
22
21
20
2
4
6
8
10
12
14
16
18
20
Frequency/GHz
Output IP3, Vdd = 28 V, Vgg1 = -2.8 V, Vgg2 = 10 V, Idd = 700 mA, TA = 25 oC
50
49
48
+25C
+85C
47
-55C
46
45
Output IP3/dBm
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
2
4
6
8
10
12
14
16
18
20
Frequency/GHz
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.2 0116
CMD184
0.5-20 GHz GaN Power Amplifier
Mechanical Information
Die Outline (all dimensions in microns)
542.50
152.00
2
3
4
2000.00
1848.00
1
658.75
6
5
2419.75
2569.75
3520.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 100 microns thick
5. DC bond pads are 100 microns square
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD184
0.5-20 GHz GaN Power Amplifier
Pad Description
Pad Diagram
2
3
4
1
6
5
Functional Description
Pad
Function
Description
1
RF in
50 ohm matched input
2
Vgg2
Power Supply Voltage
Decoupling and bypass caps required
3
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit
4
RF out &
Vdd
Power supply voltage and 50 ohm matched
output
6
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit
5
Vgg1
Power supply voltage
Decoupling and bypass caps required
Schematic
RF in
Vgg2
ACG1
RF in
ACG2
RF out & Vdd
Vgg1
GND
Backside
Ground
Connect to RF/DC ground
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD184
0.5-20 GHz GaN Power Amplifier
Applications Information
Assembly Guidelines
The backside of the CMD184 is RF ground. Eutectic die attach is recommended. Standard assembly
procedures should be followed for high frequency devices. The top surface of the semiconductor should
be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close
proximity to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.
The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
To Vgg2
0.1 uF BYPASS CAP
0.1 uF CAP TO GROUND
100 pF BYPASS CAP
(example: Presidio part
LSA1515B101M2H5R-L)
To Vdd
RF out
RF in
100 pF BYPASS CAP
0.1 uF CAP TO GROUND
(example: Presidio part
MVB4080X104ZGK5R3L)
0.1 uF BYPASS CAP
To Vgg1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD184
0.5-20 GHz GaN Power Amplifier
Applications Information
Application Circuit
Vgg2
0.1 uF
100 pF
0.1 uF
2
Vdd
3
RF in
1
RF out
4
5
6
0.1 uF
Vgg1
100 pF
0.1 uF
Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.
Biasing and Operation
The CMD184 is biased with a positive drain supply, positive gate supply and negative gate supply.
Turn ON procedure:
1.Apply gate voltage Vgg1 and set to a voltage sufficient to pinch off drain current (~ -8 V)
2.Apply drain voltage Vdd and set to +28 V
3.Apply gate voltage Vgg2 and set to +10 V
4.Increase Vgg1 (less negative) to achieve a drain current of 700 mA
Turn OFF procedure:
1.Turn off gate voltage Vgg2
2.Turn off drain voltage Vdd
3.Turn off gate voltage Vgg1
RF power can be applied at any time.
ver 1.2 0116
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com