Veröffentlichungen
1. F. Kersten, A. Schmid, S. Bordihn, J. Müller, J. Heitmann, Role of annealing
conditions on surface passivation properties of ALD Al2O3 films. Energy
Procedia 38 (2013), 843-848.
2. W. Weinreich, L. Wilde, J. Mueller, J. Sundqvist, E. Erben, J. Heitmann, M.
Lemberger, A. Bauer, Structural properties of as deposited and annealed ZrO2
influenced by atomic layer deposition, substrate, and doping. J. Vac. Sci.
Techno. A: Vacuum, Surfaces, and Films 31 (1) (2013), 01A119/1-01A119/9.
3. S. Haas, F. Schneider, C. Himcinschi, V. Klemm, G. Schreiber, J. von Borany,
J. Heitmann, Ge nanoparticle formation by thermal treatment of rf-sputtered
ZrO2/ZrGe2O3 superlattices. J. Appl. Phys. 113 (2013), 044303.
4. F. Benner, S. Haas, F. Schneider, V. Klemm, G. Schreiber, J. von Borany, T.
Mikolajick, J. Heitmann, Silicon and Germanium Nanoclusters Embedded in
Zirconium Dioxide Matrices. ECS J. Solid State Sci. Technol. 1 (6) (2012),
N135-N138.
5. A. Krause, W. M. Weber, U. Schröder, D. Pohl, B. Rellinghaus, J. Heitmann,
T. Mikolajick, Reduction of leakage currents with nanocrystals embedded in
an amorphous matrix in metal-insulator-metal capacitor stacks, Appl. Phys.
Lett. 99 (2011) 222905.
6. A. Krause, W. Weber, A. Jahn, K. Richter, D. Pohl, B. Rellinghaus, U.
Schröder, J. Heitmann, T. Mikolajick, Evaluation of the electrical and physical
properties of thin calcium titanate high-k insulators for capacitor applications,
J. of Vac. Science and Techn. B 29 (2011) 01AC07.
7. D. Martin, M. Grube, W. Weinreich, J. Müller, L. Wilde, E. Erben, W. Weber,
J. Heitmann, U. Schroder, T. Mikolajick, H. Riechert, Macroscopic and
microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2
metal-insulator-metal structures, J. of Vac. Science and Techn. B 29(1) (2011)
01AC02-01AC02-8.
8. D. Martin, M. Grube, P. Reinig, L. Oberbeck, J. Heitmann, W. M. Weber, T.
Mikolajick, and H. Riechert, Influence of composition and bottom electrode
properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks,
Appl. Phys. Lett. 98 (2011) 012901.
9. D. Zhou, U. Schroeder, J. Xu, J. Heitmann, G. Jegert, W. Weinreich, M.
Kerber, S. Knebel, E. Erben, and T. Mikolajick, Reliability of Al2O3-doped
ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal
capacitors, J. of Appl. Phys. 108 (2010) 124104.
10. J. Heitmann and T. Mikolajick, Nanocrystalline Materials: Optimization of
Thin Film Properties, ECS Trans. 28 (2) (2010) 451-460.
11. D. Zhou, U. Schröder, S. Uppal, R. Agaiby, G. Jegert, J. Heitmann, M.
Reinicke, TDDB of amorphous ZrAlxOy high-k dielectric used in DRAM
MIM capacitor, J. of Appl. Phys. 106 (2009) 044104.
12. A. Paskaleva, M. Lemberger, A.J. Bauer, W. Weinreich, J. Heitmann, E.
Erben, U. Schröder, and L. Oberbeck, Influence of the amorphous/crystalline
phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal
insulator metal stacks, J. Appl. Phys. 106 (2009) 054107.
13. R. Agaiby, P. Hofmann, D. Zhou, M. Kerber, J. Heitmann, U. Schroeder, E.
Erben, L. Oberbeck, First Insight Into the Lifetime Acceleration Model of
High-k ZrO2/SiO2/ZrO2 Stacks for Advanced DRAM Technology Nodes,
IEEE Elect. Dev. Lett. 30 (4) (2009) 340-342.
14. W. Weinreich, L. Wilde, P. Kücher, M. Lemberger, V. Yanev, M. Rommel,
and A. J. Bauer, E. Erben, J. Heitmann, U. Schröder, and L. Oberbeck,
Correlation of microscopic and macroscopic electrical characteristics of high-k
ZrSixO2−x thin films using tunneling atomic force microscopy, J. Vac. Sci.
Technol. B Volume 27(1) (2009) 364-368.
15. M. Kerber, C. Fachmann, J. Heitmann, S. Kudelka, U. Schröder, H. Reisinger,
Trap related dielectric absorption of HfSiO films in metal-insulatorsemiconductor structures, J. Vac. Sci. Technol. B 27(1) (2009) 321-324.
16. W. Weinreich, R. Reiche, M. Lemberger, G. Jegert, J. Müller, L. Wilde, S.
Teichert, J. Heitmann, E. Erben, L. Oberbeck, U. Schröder, A.J. Bauer, H.
Ryssel, Impact of interface variations on J–V and C–V polarity asymmetry of
MIM capacitors with amorphous and crystalline ZrAlxOy films, Microelectr.
Eng. 86 (7-9) (2009) 1826-1829.
17. V. Yanev, M. Rommel, M. Lemberger, W. Weinreich, U. Schröder, J.
Heitmann et al., Tunneling AFM as a highly sensitive mapping tool for the
characterization of film morphology in thin high-k dielectrics, Appl. Phys.
Lett. 92 (2008) 252910.
18. J.-H. Kim, V. Ignatova, P. Kücher, J. Heitmann, L. Oberbeck, and U.
Schröder, Physical and electrical characterization of high-k ZrO2 metal–
insulator–metal capacitor, Thin Solid Films, Thin Solid Films 516 (2008)
8333-8336.
19. J.-H. Kim, V.A. Ignatova, J. Heitmann, and L. Oberbeck, Deposition
temperature effect on electrical properties and interface of high-k ZrO2
capacitor, J. Phys. D: Appl. Phys. 41 (2008) 172005.
20. I. Jõgi, M. Pärs, J. Aarik, A. Aidla, M. Laan, J. Sundqvist, L. Oberbeck, J.
Heitmann and K. Kukli, Conformity and structure of titanium oxide films
grown by atomic layer deposition on silicon substrates, Conformity and
structure of titanium oxide films grown by atomic layer deposition on silicon
substrates, Thin Solid Films 516 (15) (2008) 4855-4862.
21. K. Kukli, M. Ritala, M. Leskela, J. Sundqvist, L. Oberbeck, J. Heitmann, U.
Schröder, J. Aarik, A. Aidla, Influence of TiO2 incorporation in HfO2 and
Al2O3 based capacitor dielectrics, Thin Solid Films 515 (2007) 6447-6451.
22. T. S. Böscke, S. Govindarajan, P. D. Kirsch, P. Y. Hung, C. Krug, B. H. Lee,
J. Heitmann, U. Schröder, G. Pant, B. E. Gnade, and W. H. Krautschneider,
Stabilization of higher- tetragonal HfO2 by SiO2 admixture enabling thermally
stable metal-insulator-metal capacitors, Appl. Phys. Lett. 91 (2007) 072902.
23. T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U.
Schröder, S. Kudelka, P. Kirsch, C. Krug, P. Y. Hung, J. Price, M. QuevedoLopez, G. Pant, B. E. Gnade, W. Krautschneider, B. H. Lee, and R. Jammy,
Tech. Dig. - Int. Electron Devices Meet. 255 (2006).
24. J. Heitmann, A. Avellán, T. Böscke, E. Erben, B. Hintze, S. Jakschik, S.
Kudelka, and U. Schröder, HfAlO and HfSiO Based Dielectrics for Future
DRAM Application, ECS. Trans. 2 (2006) 217.
25. A. Zimina, S. Eisebitt, W. Eberhardt, J. Heitmann, and M. Zacharias
Electronic structure and chemical environment of silicon nanoclusters
embedded in a silicon dioxide matrix. Appl. Phys. Lett. 88(16) (2006)
163103/1-3.
26. D. Navarro-Urios, F. Riboli, M. Cazzanelli, A. Chiasera, N. Daldosso, L.
Pavesi, C. J. Oton, J. Heitmann, L. X. Yi, R. Scholz, and M. Zacharias
Birefringence characterization of mono-dispersed silicon nanocrystals planar
wave guides. Optical Materials 27(5) (2005) 763-768.
27. J. Heitmann, F. Müller, M. Zacharias, and U. Gösele, Silicon nanocrystals:
Size matters. Advanced Materials 17(7) (2005) 795-803.
28. M. Cazzanelli, D. Navarro-Urrios, F. Riboli, N. Daldosso, L. Pavesi, J.
Heitmann, L. X. Yi, R. Scholz, M. Zacharias, and U. Gösele
Optical gain in monodispersed silicon nanocrystals.
Journal of Applied Physics 96(6) (2004) 3164-3171.
29. P.K. Kashkarov, B. V. Kamenev, M. G. Lisaschenko, O. A. Shalygina, V. Y.
Timoshenko, M. Schmidt, J. Heitmann, and M. Zacharias
High-efficiency erbium ion luminescence in silicon nanocrystal systems.
Physics of the Solid State 46(1) (2004) 104-108.
30. V.Y. Timoshenko, M. G. Lisaschenko, O. A. Shalygina, B. V. Kamenev, P. K.
Kashkarov, J. Heitmann, M. Schmidt, and M. Zacharias, Highly efficient
sensetizing of erbiumionluminescence in size-controlled nanocrystalline
Si/SiO2 superlattice structures. Appl. Phys.Lett. 84(14) (2004) 2512-2514.
31. V.Y. Timoshenko, M. G. Lisaschenko, O. A. Shalygina, B. V. Kamenev, D.
M. Zhigunov, S. A. Teterukov, P. K. Kashkarov, J. Heitmann, M. Schmidt,
and M. Zacharias, Comparative study of photoluminescence of un-doped and
erbium-doped size-controlled nanocrystalline Si/SiO2 multilayered structures.
Journal of Applied Physics 96(4) (2004) 2254-2260.
32. F. Riboli, D. Navarro-Urrios, A. Chiasera, N. Daldosso, L. Pavesi, C. J. Oton,
J. Heitmann, L. X. Yi, R. Scholz, and M. Zacharias
Birefringence in optical waveguides made by silicon nanocrystal superlattices.
Applied Physics Letters 85(7) (2004) 1268-1270.
33. J. Heitmann, F. Müller, L. X. Yi, M. Zacharias, D. Kovalev, and F. Eichhorn
Excitons in Si nanocrystals: Confinement and migration effects.
Physical Review B 69(19) (2004) 195309/1-7.
34. M. Zacharias, J. Heitmann, L. X. Yi, R. Scholz, M. Reiche, and U. Gösele
Size-controlled Si nanocrystals for photonic and electronic applications.
Solid State Phenomena 94 (2003) 95-104.
35. L.X. Yi, J. Heitmann, R. Scholz, and M. Zacharias, Phase separation of thin
SiO layers in amorphous SiO/SiO2 superlattices during annealing. Journal of
Physics: Condensed Matter 15 (2003) S2887-S2895.
36. J. Heitmann, M. Schmidt, L. X. Yi, M. Zacharias, V. Y. Timoshenko, M. G.
Lisaschenko, and P. K. Kashkarov
Fabrication and photoluminescence properties of erbium doped size-controlled
silicon nanocrystals. Materials Science & Engineering B 105 (2003) 214-220.
37. J. Heitmann, D. Kovalev, M. Schmidt, L.X. Yi, R. Scholz, F. Eichhorn, M.
Zacharias. Synthesis and size control of Si nanocrystals by SiO/SiO2
superlattices and Er doping. Mat. Res. Soc. Symp. Proc. Vol. 737 (2003) 271.
38. M. Zacharias, J. Heitmann, L. Yi, E. Wildanger, R. Scholz. Silicon technology
used for sizecontrolled Si nanocrystals. NATO Science Series, ed. by L.
Pavesi, Kluwer Academic Publishers,II. Mathematics, Physics and Chemistry,
Vol. 93 (2002) 131.
39. M. Zacharias, L.X. Yi, J. Heitmann, R. Scholz, M. Reiche, U. Gösele. Sizecontrolled Si nanocrystals for photonic and electronic applications. Solid State
Phenomena 94 (2003) 95.
40. L.X. Yi, J. Heitmann, R. Scholz, M. Zacharias. Si rings, Si cluster, and Si
nanocrystals - different states of ultra thin SiO layers. Appl. Phys. Lett. 81
(2002) 4248.
41. M. Schmidt, J. Heitmann, R. Scholz, V.Y. Timoshenko, M.G. Lisachenko, M.
Zacharias. Er doping of ordered size controlled Si nanocrystals. Advanced
Luminescence Materials and Quantum Confinement. Electrochemical Society
Proceedings 2002-9 (2002) 83.
42. J. Heitmann, R. Scholz, L. Yi, M. Schmidt, M. Zacharias. Synthesis and size
control of Si nanocrystals by SiO/SiO2 superlattices. Advanced Luminescence
Materials and Quantum Confinement, Electrochemical Society Proceedings
2002-9 (2002) 93.
43. M. Zacharias, J. Heitmann, R. Scholz, M. Schmidt. Active control of position,
density and size for Si quantum dots for nanophotonic applications. Photonics
West, Proceedings SPIE 4654 (2002) 110.
44. M. Schmidt, J. Heitmann, R. Scholz, M. Zacharias. Bright luminescence from
Erbium doped nc-Si/SiO2 superlattices. J. Non-Cryst. Solids 299-302 (2002)
678.
45. J. Heitmann, R. Scholz, M. Schmidt, M. Zacharias. Size controlled nc-Si
synthesis by SiO/SiO2 superlattices. J. Non-Cryst. Solids 299-302 (2002)
1075.
46. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, J. Bläsing.
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2
superlattice approach. Appl. Phys. Lett. 80 (2002) 661.
47. M. Zacharias, J. Heitmann, U. Gösele. Superlattice Process Controls Size of Si
Nanocrystals on Si Wafers. MRS Bulletin 26 (2001) 975.
48. M. Zacharias, J. Heitmann, M. Schmidt, P. Streitenberger. Confinement in
crystallization and Er doping of Si nanostructures. Physica E 11 (2001) 245.
49. J. Heitmann, J.C. McCallum, J. Meijer, A. Stephan, T. Butz, M. Zacharias. Si
doped luminescence gratings. Nucl. Instr. and Meth. B 181 (2001) 263.
50. S. Lebed, T. Butz, J. Vogt, T. Reinert, D. Spemann, J. Heitmann, Z. Stachura,
J. Lekki, A. Potempa, J. Styczen, B. Sulkio-Cleff. A novel ultra-short scanning
nuclear microprobe: Design and preliminary results. Nucl. Instr. Meth. Phys.
Res. B 181 (2001) 32.
51. T. Reinert, J. Heitmann, D. Spemann, P. Guo, J. Wang, J. Zhu, J. Vogt, R.-H.
Flagmeyer, and T. Butz, "Combination of Micro-PIXE with the Pattern
Recognition Technique for the Source Identification of Individual Aerosol
Particles," Appl. Spectrosc. 54 (2000) 807-811.
52. J. Vogt, R.-H. Flagmeyer, J. Heitmann, D. Lehmann, T. Reinert, St. Jankuhn,
D. Spemann, W. Tröger, T. Butz. Solid State Analysis with the New Leipzig
High-Energy Ion Nanoprobe. Mikrochim. Acta 133 (2000) 105.
53. J. Wang, P. Guo, X. Li, J. Zhu, T. Reinert, J. Heitmann, D. Spemann, J. Vogt,
R.-H. Flagmeyer,T. Butz. Source Identification of Lead Pollution in the
Atmosphere of Shanghai City by Analyzing Single Aerosol Particles (SAP).
Environ. Sci. Technol. 34 (2000) 1900.
54. J. Wang, P. Guo, X. Li, J. Zhu, T. Reinert, J. Heitmann, D. Spemann, J. Vogt,
R.-H. Flagmeyer, T. Butz. Identification of air pollution sources by single
aerosol particle fingerprints - micro-PIXE spectra. Nucl. Instr. Meth. B 161163 (2000) 830.
55. P. Guo, J. Wang, X. Li, J. Zhu, T. Reinert, J. Heitmann, D. Spemann, J. Vogt,
R.-H. Flagmeyer,T. Butz. Study of metal bioaccumulation by nuclear
microprobe analysis of algae fossils and living algae cells. Nucl. Instr. Meth. B
161-163 (2000) 801.
56. T. Butz, R.-H. Flagmeyer, J. Heitmann, D.N. Jamieson, G.J.F. Legge, D.
Lehmann, U. Reibetanz,T. Reinert, A. Saint, D. Spemann, R. Szymanski, W.
Tröger, J. Vogt, J. Zhu. The Leipzig high-energy ion nanoprobe: A report on
first results. Nucl. Instr. Meth. B 161-163 (2000) 323.
57. J. Heitmann, J.C. McCallum, W. Tröger, T. Butz, R. Hesse. Concentration
profiles and structural changes of silver intercalated titanium disulfide. Nucl.
Instr. Meth. B 161-163 (2000) 619.
58. J. Heitmann, J. McCallum, W. Tröger, T. Butz. Silver intercalation into
titanium disulphide.Nucl. Instr. Meth. B 158 (1999) 689.
Konferenzbeiträge
Eingeladene Vorträge (ausgewählt)
J. Heitmann and T. Mikolajick, Nanocrystalline Materials: Optimization of Thin Film
Properties, Meeting ECS 2010, April 25-30, Vancouver, Canada.
J. Heitmann et al., HfAlO and HfSiO dielectrics for future DRAM application, ECS
2006 (209th Meeting), May 7-12, Denver, Colorado, USA.
M. Zacharias, J. Heitmann, M. Schmidt, L.X. Yi, V.Yu. Timoshenko, M.G.
Lisachenko, P.K. Kashkarov. Fabrication and photoluminescence properties of
Erbium doped size-controlled Si nanocrystals. E-MRS Meeting, Symposium J (Rare
earth doped materials for Photonics), 10.-13. 6. 2003, Strasbourg, France.
J. Heitmann, D. Kovalev, L.X. Yi, R. Scholz, M. Zacharias. Size-control and optical
characterization of Si nanocrystals fabricated by SiO/SiO2 superlattices. Mat. Res.
Soc. Fall Meeting, Symposium F (Nanocrystalline semiconductor materials and
devices), 2.-6.12.2002, Boston, USA.
M. Zacharias, M. Schmidt, J. Heitmann, L.X. Yi, R. Scholz. Size- controlled Si
nanocrystals and Erbium doping. Mat. Res. Soc. Fall Meeting, Symposium E (Physics
and technology of semiconductor quantum dots), 2.-6.12.2002, Boston, USA.
M. Zacharias, J. Heitmann, L.X. Yi, M. Schmidt, R. Scholz, U. Gösele. Sizecontrolled Si nanocrystals
for photonic and electronic applications. E-MRS 2002 Fall Meeting, Warsaw, Poland,
15.-19.9.2002.
J. Heitmann, J.C. McCallum, J. Meijer, A. Stephan, T. Butz. Optical properties of ncSi microstructures in SiO2. 7th International Conference on Nuclear Microprobe
Technology and Applications (ICNMTA-2000), 10.-15.9.2000, Bordeaux, France.
Vorträge (ausgewählt)
T.S. Boescke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroder,
S. Kudelka, P.D. Kirsch, C. Krug, P.Y. Hung, J. Price, G. Pant, B.E. Gnade, W.
Krautschneider, B.-H. Lee, R. Jammy, Tetragonal Phase Stabilization by Doping as an
Enabler of Thermally Stable HfO2 Based MIM and MIS Capacitors for Sub 50nm
Deep Trench DRAM, IEDM 2006, December 11-13, 2006, San Francisco, CA
T. Boescke, J. Sundqvist, A. Sänger, B. Hintze, J. Heitmann, S. Kudelka,W.
Krautschneider, J. Müller, ALD of mixed metal nitrides for structure engineering of
MIM capacitors in deep trench DRAM, ALD 2005, 8-10.8.2005, San Jose, USA
J. Heitmann, L. Yi, R. Scholz, M. Zacharias. Si based highly luminescent photonic
structures. CLEO, Symposium 6 (Optical Materials, Fabrication and Characterization), 20.-25.5.2002, Long Beach, CA, USA.
J. Heitmann, L. Yi, R. Scholz, M. Schmidt, M. Zacharias. Synthesis and size control
of Si nanocrystals by SiO/SiO2 superlattices. Advanced Luminescence Materials and
Quantum Confinement, The Electrochemical Society, 12.-17. 5. 2002, Philadelphia,
USA.
M. Schmidt, J. Heitmann, M. Zacharias. Size controlled Si nanostructures and their
interaction with erbium ions. ICAMS 19, 25.-31.8.2001, Nizze, France.
J. Heitmann, R. Scholz, M. Schmidt, M. Zacharias. A novel approach for silicon
nanocrystals with control of particle size and density. ICAMS 19, 25.-31.8.2001,
Nizze, France.
J. Vogt, R.-H. Flagmeyer, J. Heitmann, D. Lehmann, T. Reinert, St. Jankuhn, D.
Spemann, W. Tröger, T. Butz. Solid State Analysis with the New Leipzig HighEnergy Ion Nanoprobe. 10th Symposium of Solid State Analysis, 5.-7.7.1999, Vienna,
Austria.
T. Butz, R.-H. Flagmeyer, D. Lehmann, W. Tröger, J. Vogt, J. Heitmann. The High
Energy Ion Nanoprobe at Leipzig: Installation and Performance Tests. ICNMTA 98,
11.-16.10.1998, Spier, Estate, Stellenbosch, South Africa.
Patente
P. Lahnor, O. Wunnicke, J. Heitmann, P. Moll, A. Orth, Mold layer forming method,
involves forming mold layer on one of surface sections of substrate after forming
template, and removing template after applying mold layer, where opening is formed
in mold layer via another surface section, DE102006013245 (2007-10-4).
J. Heitmann, P. Moll, O. Wunnicke, T. Schlösser, Storage capacitor for semiconductor
memory cells and method of manufacturing a storage capacitor, DE102006013246
(2007-08-02) / US2007170487 (2007-12-13).
P. Lahnor, O. Wunnicke, J. Heitmann, P. Moll, A. Orth, Methods for forming an
integrated Circuit, including openings in a mold layer, US2007286945 (2007-12-13).
A. Sänger, E. Erben, J. Schumann, J. Heitmann, L. Oberbeck, S. Kudelka, T. Böscke,
U. Schröder, Deposition method for a transition-metal-containing
dielectric, US2008173919 (2008-07-24) / DE102007006596 (2008-08-21).
A. Sänger, E. Erben, J. Schumann, J. Heitmann, L. Oberbeck, S. Kudelka, T. Böscke,
U. Schröder, Separating a dielectric material comprises forming a first layer using a
first and second precursor, on the conductive section of the substrate and forming a
second layer using the first and third precursor on the first layer, DE102007005103
(2008-08-07).
T. Böscke, J. Heitmann, U. Schröder, Integrated circuit with dielectric layer,
US2009057737 (2009-03-05).
A. Sänger, J. Heitmann, S. Jakschik, T. Böscke, U. Schröder, High workfunction, low
resistivity electrodes for MIM capacitor applications, 2007P52547 US.
D. Köhler, J. Heitmann, M. Obert, Procedure to etch high k materials, 2007P52227
US.
J. Heitmann, J. Sundqvist, L. Oberbeck, S. Kudelka, T. Böscke, U. Schröder,
Enhancement of ZrO2 high-k dielectrics properties by doping with Sr and related
oxides, 2006P54052 DE.