Oxides for Non Volatile Memory Devices:
The MeMOSat Project
Pablo Levy1,5, Federico Golmar2,3,5, Diego Rubi1,3,5, Néstor Ghenzi3, Fernando Gomez Marlasca1, Carlos Acha4,5, Gabriela
Leyva1,5, Maria José Sanchez1,5, Marcelo Rozenberg4,5, Javier Curiale1,5, Felix Palumbo1,5, Liliana Fraigi2, Laura
Malatto2, Pablo Stoliar3,6, Luis Hueso6, Mariela Menghini7, Cynthia Quinteros5, Mercedes Linares5, Mariano
Barella5, Federico Tesler5, Wilson Acevedo5, Cristian Ferreyra1, Leandro Lanosa4.
1
CNEA, Argentina; 2 INTI, Argentina; 3 UNSAM, Argentina; 4 UBA, Argentina; 5 CONICET, Argentina; 6 NANOGUNE, España; KUL, Bélgica
The MeMOSat Project1 is a consortium aimed at producing non-volatile memory devices to work in aggressive
environments. Our devices rely on the Resistive Switching mechanism, which produces a change in the electrical resistance
across a metal-insulator-metal structure. A review of MeMOSat’s activities is presented, covering the initial Proof of
Concept in ceramic millimeter sized samples; the study of different oxide-metal couples, including (LaPr) 2/3Ca1/3MnO,
La2/3Ca1/3MnO3, La1/3Ca2/3MnO3, YBa2Cu3O7, TiO2, HfO2, MgO and CuO; and recent miniaturized arrays of micrometer sized
devices controlled by in-house designed electronics, which were launched with the BugSat01 satellite by Satellogic2, in June
2014. The MeMOSat-01 platform is the initial step of the LaboSat Project3, a versatile electronic platform to perform
experiments in low earth orbit.
Cryogenic MR
Polycristalline
(LaPr)2/3Ca1/3MnO3
Room T ElectroResistance…!: Polycristalline (LaPr)2/3Ca1/3MnO3
Proof of Principle
Polycristalline YBaCuO7
PLCMO (Pr=0.3) T=300 K
-4
2x10
V101
0.1
-4
2x10
PLCMO Pr=0.3 T=300 K i = 1mA
-4
V103
VBD (V)
1x10
0.05
0.00
0.01
A
B
C
D
V102
0.1
0.028
0.278
2.778
Time (hours...!)
MgO / MBE
27.778
0.0
24.4
24.6
24.8
25.0
25.2
25.4
25.6
25.8
Time (hours)
Mesoporous TiO2
TiO2 /sputtering
La 2/3Ca1/3MnO, PLD
Abs current (A)
HfO2 /ALD
1x10
-6
1x10
-7
1x10
-8
1x10
-9
1x10
-10
1x10
-11
1x10
-12
1x10
-13
1x10
-14
-20
-10
0
10
CuO, PLD
20
Gate voltage (V)
Proof of Concept
Irradiation
Current (A)
1E-3
1E-5
(a)
1E-7
Irradiated devices
1E-9
-4
-2
0
2
Voltage (V)
4
Voltage (V)
2
0
V. rupture (+) - Non-irrad.
V. rupture (-) - Non-irrad.
V. rupture (+) - Irrad.
V. rupture (-) - Irrad.
-2
-4
-6
100k
1M
2
Electrode Area (m )
LaCaMnO3 films w/ O 25 MeV
dose of 3.1012 ions
Breakdown voltage study
First Prototype: the MeMOSat_01 platform
TiO2 films w/ O 25 MeV
dose of 3.1012 ions
Breakdown voltage study
HfO2 w/ O 25 MeV
dose of 3.1012 ions
Remnant resistance study
Premio Dupont – CONICET, edición 2010: MeMOSat, MeMO p/ aplicaciones SATelitales
Premio INNOVAR-2012: Primer Premio en Categoría Investigación Aplicada: MeMOSat
Premio MIT Technology Review para Innovadores menores de 35 años
First Alliance:
Satellogic
REFERENCES
*”Nonvolatile magnetoresistive memory in phase separated La0.325Pr0.300Ca0.375MnO3”, P. Levy, F.Parisi, M.Quintero, L.Granja, J.Curiale, J.Sacanell, G.Leyva, G.Polla, R.S. Freitas and L.Ghivelder, Phys.Rev.B 65, R140401 (2002).
*”Simultaneous electric and magnetic field induced non-volatile memory”, M.Quintero, A.G.Leyva and P.Levy, Appl. Phys. Lett. 86, 242102 (2005).
*"High resolution determination of ferromagnetic metallic limit in epitaxial La 1-xCaxMnO3 films on NdGaO3", D. Sanchez, L.E. Hueso, L. Granja, P. Levy, N.D. Mathur, Appl. Phys. Lett. 89, 142509 (2006).
*“Evidences of a consolute critical point in the Phase Separation regime of La 5/8-yPryCa3/8MnO3 single crystals”, G. Garbarino, C. Acha, P. Levy, T. Y. Koo and S-W.Cheong, Phys.Rev. B 74-R100401 (2006).
*“Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites”, M.Quintero, P.Levy, A.G. Leyva, and M.J.Rozenberg, Phys. Rev.Lett. 98, 116601 (2007).
*“Giant magnetic domain-wall resistance in phase-separated manganite films”, L. Granja, L. E. Hueso, J. L. Prieto, P. Levy, and N. D. Mathur, Appl.Phys.Lett. 97, 253501 (2010).
*“Understanding Electroforming in Bipolar Resistive Switching Oxides, F.G.Marlasca, N.Ghenzi, M.Rozenberg and P. Levy, Appl. Phys. Lett.98, 042901(2011 ).
*“Asymmetric pulsing for reliable operation of titanium/manganite memristors, FGMarlasca, N.Ghenzi, P.Stoliar, M.J.Sánchez, M.Rozenberg, G.Leyva and P.Levy, Appl.Phys.Lett. (2011), Appl. Phys. Lett. 98, 123502 (2011).
*“Exploiting phase separation in monolithic La0.6Ca0.4MnO3 devices, L. Granja, L. Hueso, P. Levy and N.Mathur, Appl. Phys. Lett.103, 062404 (2013).
* “Mechanism for bipolar resistive switching in transition metal oxides”, M.Rozenberg, M.J.Sanchez, R. Weht, C. Acha, F.GMarlasca and P. Levy, Phys.Rev. B 81,115101(2010).
* “Hysteresis Switching Loops in Ag manganite memristive interfaces”, N.Ghenzi, M.J.Sánchez, F.GMarlasca, P. Levy and M.Rozenberg, J. Appl. Phys.107, 093719 (2010).
* “Magnetism and electrode dependant resistive switching in Ca-doped ceramicbismuth ferrite”, D. Rubi, F.G. Marlasca, M. Reinoso, P. Bonville and P. Levy, Mater. Sci. Eng. B (2012), doi:10.1016/j.mseb.2012.02.022
*“Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol”, N. Ghenzi, M. J. Sánchez, M. J. Rozenberg, P. Stoliar, F. G. Marlasca, D. Rubi y P. Levy , J. Appl. Phys. 111, 084512 (2012).
* “Modeling electronic transport mechanisms in metal-manganite memristive interfaces”, F. Gomez-Marlasca,N. Ghenzi, A. G. Leyva, C. Albornoz,D. Rubi,P. Stoliar,and P. Levy, J. Appl. Phys. 113, 144510 (2013).
* “ A compact model for binary oxides-based memristive interfaces”, N. Ghenzi, M. J. Sánchez and P. Levy, J. Phys. D: Appl. Phys. 46, 415101 (2013).
*“Two resistive switching regimes in thin film manganite memory devices on silicon”, D. Rubi, F. Tesler, I. Alposta, A. Kalstein, N. Ghenzi, F. Gomez-Marlasca, M. Rozenberg and P. Levy, Appl. Phys. Lett. 103, 163506 (2013).
*” Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit”, P. Stoliar, P. Levy, M. J. Sánchez, G. Leyva, C. A. Albornoz, F. Gomez-Marlasca, A. Zanini, C. T. Salazar, N.Ghenzi, and M. Rozenberg, IEEE Transactions on Circuits and Systems II 61 (1), 21(2014).
* ”HfO2 based memory devices with rectifying capabilities, Quinteros, C. ; Zazpe, R. ; Marlasca, F.G. ; Golmar, F. ; Casanova, F. ; Stoliar, P. ; Hueso, L. ; Levy, P.Journal of Applied Physics 115 (2) 024501 (2014).
* ”Building Memristive and Radiation Hardness TiO2-based Junctions”, N. Ghenzi, D. Rubi, E. Mangano, G. Gimenez, J. Lell, A. Zelcer, P. Stoliar and P. Levy, Thin Solid Films 550, 683-688 (2014).
Launch by Satellogic