MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
J
N
N
123 4
D
1. V UPC
2. U FO
3. U P
4. V UPI
5. V VPC
6. V FO
7. V P
8. V VPI
9. V WPC
10. W FO
11. W P
12. V WPI
13. V NC
N
U
5678
9
11
13 15 17 19
10 12
14 16 18
T (15 TYP.)
E
G
F
C
Q (4 TYP.)
P
R - DIA.
(4 TYP.)
L
N
B
M
M
U
M
V
M
W
M
14. V NI
15. B RN
16. U N
17. V N
18. W N
19. F O
20. P
21. B R
22. N
23. U
24. V
25. W
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
6.0 ± 0.1 X 0.8 ± 0.1 MM PIN
(6 TYP.)
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN
(19 TYP.)
V
S
H
K
Features:
u Complete Output Power
Circuit
V UPC
UP
U FO
V UPI
V VPC
VP
V FO
V VPI
V WPC
WP
W FO
V WPI
UN
VN
V NI
FO
BR
V NC
WN
P
B
N
V
FO
V CC
OUT
IN
SI
V CC
OUT
GND GND
FO
IN
SI
V CC
OUT
W
GND GND
FO
IN
SI
GND GND
FO
V CC
OUT
IN
SI
GND GND
FO
IN
V CC
OUT
TEMP
SI
V CC
GND GND
OUT
IN
FO
SI
V CC
GND GND
OUT
FO
IN
SI
GND GND
u Gate Drive Circuit
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
3.96±0.04
100.5±1.0
L
B
3.48±0.02
88.5±0.5
C
2.76±0.04
70.0±1.0
D
2.30±0.02
58.5±0.5
P
0.22
5.5
E
2.22±0.02
56.5±0.5
Q
0.20 Rad.
Rad. 5.0
Dia. 4.5
A
Dimensions
Inches
Millimeters
0.51
13.0
M
0.49±0.01
12.5±0.25
N
0.300±0.01
7.62
F
1.61
41.0
R
0.18 Dia.
G
1.30
33.0
S
0.108
H
0.75±0.04
19.0±1.0
T
0.100±0.01
J
0.542
13.77
U
0.030
0.75
K
0.53
13.5
V
0.04
1.0
2.75
2.54±0.25
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM50RSK060 is a 600V,
50 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
50
60
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M4 Mounting Screws
—
0.98 ~ 1.47
N·m
Module Weight (Typical)
—
Power Device Junction Temperature
110
Grams
Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.)
400
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
Supply Voltage (Applied between VUP1-VUPC , VVP1-VVPC, VWP1-VWPC, VN1-VNC)
VD
20
Volts
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN-VNC)
VCIN
20
Volts
Fault Output Supply Voltage (Applied between U FO-VUPC, VFO-V VPC, WFO-VWPC , FO-V NC)
VFO
20
Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal)
I FO
20
mA
VCES
600
Volts
IC
50
Amperes
Peak Collector Current, ±
I CP
100
Amperes
Supply Voltage (Applied between P - N)
VCC
450
Volts
VCC(surge)
500
Volts
PC
100
Watts
VCES
600
Volts
Control Sector
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, ±
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
Supply Voltage (Applied between P - N)
IC
15
Amperes
I CP
30
Amperes
VCC
450
Volts
VCC(surge)
500
Volts
Collector Dissipation
PC
43
Watts
Diode Forward Current
IF
15
Amperes
VR(DC)
600
Volts
Supply Voltage, Surge (Applied between P - N)
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
65
88
—
Amperes
18
26
—
Amperes
—
132
—
Amperes
Control Sector
Over Current Trip Level Inverter Part
OC
-20°C ≤ T ≤ 125°C, VD = 15V
SC
-20°C ≤ T ≤ 125°C, VD = 15V
—
39
—
Amperes
toff(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
—
90
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UVr
Reset Level
—
12.5
—
Volts
Applied between V UP1-VUPC,
13.5
15
16.5
Volts
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
VD
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current
ID
VD = 15V, VCIN = 15V, VN1 -VNC
—
44
60
mA
VD = 15V, VCIN = 15V, VXP1 -VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC, VP-VVPC, W P-VWPC,
UN · VN · WN · Br-V NC
1.7
2.0
2.3
Volts
PWM Input Frequency
fPWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
I FO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
I FO(L)
VD = 15V, VFO = 15V
—
10
15
mA
t FO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Diode Forward Voltage
VEC
-IC = 50A, VD = 15V, VCIN = 15V
—
2.2
3.3
Volts
IGBT Inverter Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, IC = 50A
—
1.8
2.7
Volts
VD = 15V, VCIN = 0V, IC = 50A,
—
1.85
2.78
Volts
0.4
0.8
2.0
µs
Tj = 125°C
Inductive Load Switching Times
t on
t rr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
t C(on)
VCC = 300V, IC = 50A
—
0.4
1.0
µs
t off
Tj = 125°C
—
2.0
2.9
µs
—
0.5
1.0
µs
—
2.6
3.5
Volts
—
3.0
4.0
Volts
t C(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, IC = 15A,
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 15A,
Tj = 125°C
Diode Forward Voltage
VFM
IF = 15A, VD = 15V, VCIN = 5V
—
1.7
2.2
Volts
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Junction to Case Thermal Resistance
R th(j-c)Q
Each Inverter IGBT
Rth(j-c)F
Each Inverter FWDi
Rth(c-f)Q
Each Brake IGBT
Rth(c-f)F
Each Brake FWDi
R th(c-f)
Case to Fin Per Module,
Contact Thermal Resistance
Condition
Min.
Typ.
Max.
Units
—
—
1.25
°C/Watt
—
—
3.0
°C/Watt
—
—
2.9
°C/Watt
—
—
5.4
°C/Watt
—
—
0.038
°C/Watt
Value
Units
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 400
Volts
VD
Applied between VUP1-VUPC ,
15 ± 1.5
Volts
VN1 -VNC, VVP1-VVPC, VWP1 -VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP-V UPC, V P-V VPC, WP-VWPC,
4.0 ~ VD
Volts
UN · VN · WN · Br-VNC
PWM Input Frequency
fPWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 2.5
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
VD = 17V
15
80
13
60
40
20
0
0
12
14
16
18
20
0
0.5
1.0
1.5
2.0
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
100
101
100
VCC = 300V
VD = 15V
102
VCC = 300V
VD = 15V
SWITCHING TIMES, tc(on), tc(off), (µs)
Tj = 25oC
Tj = 125oC
toff
100
ton
REVERSE RECOVERY TIME, trr, (µs)
VCC = 300V
VD = 15V
Inductive Load
SWITCHING TIMES, ton, toff, (µs)
Tj = 25oC
VCIN = 0V
100
Inductive Load
Tj = 25oC
Tj = 125oC
10-1
tc(off)
Inductive Load
Tj = 25oC
Tj = 125oC
Irr
10-1
101
trr
tc(on)
101
10-2
100
102
101
10-2
100
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
120
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
140
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
102
100
80
60
40
0
0
100
102
101
COLLECTOR CURRENT, IC, (AMPERES)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
10-1
100
0.5
1.0
1.5
2.0
2.5
EMITTER-COLLECTOR VOLTAGE, VEC , (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2.5
120
IC = 100A
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
VD = 15V
120
100
80
60
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
UV
UVr
VD = 15V
120
14
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
140
100
80
60
13
12
11
0
0
-50
0
50
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
150
-50
0
50
100
JUNCTION TEMPERATURE, TC, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.25oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 3.0oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSK060
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
2.5
2.0
1.5
1.0
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
16
2.5
2.0
1.5
1.0
Tj = 25oC
VCIN = 0V
IC = 6A
IC = 15A
0.5
0
4
8
12
16
20
12
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0.4
0.8
1.2
1.6
DIODE FORWARD VOLTAGE, VF, (VOLTS)
15
VD = 17V
2.0
13
8
4
14
16
18
20
0
1
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 2.9oC/W
10-2
10-1
TIME, (s)
100
4
3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-3
10-3
2
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
DIODE FORWARD CHARACTERISTICS
0
12
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
102
Tj = 25oC
VCIN = 0V
0
0
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
0
DIODE FORWARD CURRENT, IF, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
101
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 5.4oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000