TSM850N06CX
60V N-Channel Power MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
3. Drain
Parameter
Value
Unit
VDS
60
V
RDS(on) (max)
VGS = 10V
85
VGS = 4.5V
100
Qg
9.3
nC
Block Diagram
Ordering Information
Part No.
mΩ
Package
Packing
TSM850N06CX RFG
SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
6.1
A
3.9
A
IDM
24.4
A
EAS
25
mJ
Power Dissipation @ TC = 25°C
PD
1.56
W
Operating Junction Temperature
TJ
150
°C
TSTG
-50 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Parameter
TC = 25°C
Continuous Drain Current
Pulsed Drain Current
TC = 100°C
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Storage Temperature Range
ID
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
1/5
Version: A14
TSM850N06CX
60V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
60
--
--
V
--
76
85
--
89
100
1.2
2.0
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 3A
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
(Note 3)
VDS = 60V, VGS = 0V
VDS = 48V, TJ = 125°C
RDS(on)
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 10V, ID = 3A
gfs
--
7
--
S
Qg
--
9.3
--
Qgs
--
2.1
--
Qgd
--
1.8
--
Ciss
--
500
--
Coss
--
45
--
Crss
--
16
--
td(on)
--
2.9
--
tr
--
9.5
--
td(off)
--
18.4
--
tf
--
5.3
--
IS
--
--
6.1
A
ISM
--
--
24.4
A
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 48V, ID = 6A,
VGS = 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
VDD = 30V, ID = 1A,
(Note 3,4)
VGS = 10V, RG = 3.3Ω
Turn-Off Fall Time (Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
Maximum Pulse Drain-Source Diode
Forward Current
the MOSFET
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
VSD
--
--
1
V
VGS = 30V, IS = 1A
dIF/dt = 100A/µs
trr
--
23.2
--
ns
Qrr
--
14.3
--
nC
Reverse Recovery Time
(Note 3)
Reverse Recovery Charge
(Note 3)
Note:
1.
Pulse width limited by safe operating area
2.
L = 1mH, IAS = 7A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM850N06CX
60V N-Channel Power MOSFET
Electrical Characteristics Curve
Gate Charge Waveform
ID, Continuous Drain Current (A)
Normalized Gate Threshold Voltage (V)
Output Characteristics
VDS, Drain to Source Voltage (V)
Threshold Voltage vs. Junction Temperature
ID, Continuous Drain Current (A)
Normalized Gate Threshold Voltage (V)
Continuous Drain Current vs. TC
Qg, Gate Charge (nC)
TC, Case Temperature (°C)
Normalized Thermal Transient Impedance Curve
ID, Continuous Drain Current (A)
Normalized Thermal Response (RθJC)
Maximum Safe Operating Area
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
3/5
Square Wave Pulse Duration (s)
Version: A14
TSM850N06CX
60V N-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
85 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM850N06CX
60V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14