INTEGRATED CIRCUITS
NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03
2002 Dec 06
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
DESCRIPTION
PIN CONFIGURATION
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
N, D Packages
IABCa 1
16
IABCb
Da 2
15
Db
3
14
+INb
–INa 4
13
–INb
VOa 5
12
VOb
V– 6
11
V+
7
10
INBUFFERb
VOBUFFERa 8
9
VOBUFFERb
+INa
Constant impedance buffers on the chip allow general use of the
AU5517/NE5517. These buffers are made of Darlington transistors
and a biasing network that virtually eliminate the change of offset
voltage due to a burst in the bias current IABC, hence eliminating the
audible noise that could otherwise be heard in high quality audio
applications.
INBUFFERa
Top View
SL00306
Figure 1. Pin Configuration
FEATURES
• Constant impedance buffers
• ∆VBE of buffer is constant with amplifier IBIAS change
• Excellent matching between amplifiers
• Linearizing diodes
• High output signal-to-noise ratio
PIN DESIGNATION
APPLICATIONS
• Multiplexers
• Timers
• Electronic music synthesizers
• Dolby HX Systems
• Current-controlled amplifiers, filters
• Current-controlled oscillators, impedances
PIN NO.
SYMBOL
NAME AND FUNCTION
1
IABCa
2
Da
3
+INa
Non-inverting input A
4
–INa
Inverting input A
5
VOa
Output A
6
V–
Negative supply
7
INBUFFERa
Buffer input A
8
VOBUFFERa
Buffer output A
9
VOBUFFERb
Buffer output B
10
INBUFFERb
Buffer input B
Amplifier bias input A
Diode bias A
11
V+
Positive supply
12
VOb
Output B
13
–INb
Inverting input B
14
+INb
Non-inverting input B
15
Db
16
IABCb
Diode bias B
Amplifier bias input B
ORDERING INFORMATION
TEMPERATURE RANGE
ORDER CODE
DWG #
16-Pin Plastic Dual In-Line Package (DIP)
DESCRIPTION
0 to +70 °C
NE5517N
SOT38-4
16-Pin Plastic Dual In-Line Package (DIP)
0 to +70 °C
NE5517AN
SOT38-4
16-Pin Small Outline (SO) Package
0 to +70 °C
NE5517D
SOT109-1
16-Pin Small Outline (SO) Package
–40 to +125 °C
AU5517D
SOT109-1
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
2002 Dec 06
2
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
CIRCUIT SCHEMATIC
V+
11
D4
D6
Q12
Q14
Q6
Q13
7,10
Q10
8,9
Q7
Q11
2,15
VOUTPUT
D3
D2
Q4
–INPUT
4,13
Q5
5,12
+INPUT
3,14
Q15
1,16
AMP BIAS
INPUT
Q16
Q3
Q2
D7
Q9
R1
Q1
D8
Q8
D1
D5
V–
6
SL00307
Figure 2. Circuit Schematic
CONNECTION DIAGRAM
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
(–)
16
15
14
13
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
12
11
10
9
5
6
7
8
–
B
+
+
A
–
1
AMP
BIAS
INPUT
A
2
DIODE
BIAS
A
3
4
INPUT
(+)
A
INPUT
(–)
A
OUTPUT
A
V–
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
BUFFER
OUTPUT
A
SL00308
Figure 3. Connection Diagram
2002 Dec 06
BUFFER
INPUT
A
3
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
44 VDC or ±22
V
NE5517N, NE5517AN
1500
mW
NE5517D, AU5517D
1125
mW
voltage1
VS
Supply
PD
Power dissipation,
Tamb = 25 °C (still air)2
VIN
Differential input voltage
±5
V
ID
Diode bias current
2
mA
IABC
Amplifier bias current
2
mA
ISC
Output short-circuit duration
IOUT
Buffer output current3
Tamb
Operating temperature range
Indefinite
NE5517N, NE5517AN
20
mA
0 °C to +70 °C
°C
°C
AU5517D
–40 °C to +125 °C
VDC
DC input voltage
+VS to –VS
Tstg
Storage temperature range
Tsld
Lead soldering temperature (10 sec max)
NOTES:
1. For selections to a supply voltage above ±22 V, contact factory
2. The following derating factors should be applied above 25 °C
N package at 12.0 mW/°C
D package at 9.0 mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
2002 Dec 06
4
–65 °C to +150 °C
°C
230
°C
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
DC ELECTRICAL CHARACTERISTICS1
SYMBOL
VOS
PARAMETER
Input offset voltage
∆VOS/∆T
VOS including diodes
VOS
Input offset change
IOS
Input offset current
∆IOS/∆T
IBIAS
Input
In
ut bias current
∆IB/∆T
gM
Forward transconductance
AU5517/NE5517
TEST CONDITIONS
Min
Over temperature range
IABC 5 µA
Typ
Max
0.4
0.3
Avg. TC of input offset voltage
7
Diode bias current (ID) = 500 µA
0.5
5 µA ≤ IABC ≤ 500 µA
0.1
Avg. TC of input offset current
0.001
Over temperature range
0.4
1
0.1
Avg. TC of input current
NE5517A
Min
Max
5
0.4
5
0.3
2
5
2
5
0.5
2
mV
0.1
3
mV
0.1
0.6
0.6
0.4
1
Over temperature range
gM tracking
9600
7700
4000
0.3
RL = 0, IABC =5 µA
RL = 0, IABC = 500 µA
RL = 0
350
300
+12
–12
5
500
5
7
9600
1200
µmho
µmho
7
650
µA
µA
µA
0.3
5
500
+12
–12
+14.2
–14.4
dB
IOUT
Peak output current
VOUT
Peak output voltage
Positive
Negative
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
ICC
Supply current
IABC = 500 µA, both channels
2.6
4
2.6
4
mA
VOS sensitivity
Positive
Negative
∆ VOS/∆ V+
∆ VOS/∆ V–
20
20
150
150
20
20
150
150
µV/V
µV/V
CMRR
Common-mode rejection
ration
Common-mode range
Crosstalk
IIN
Differential input current
Leakage current
+14.2
–14.4
110
80
110
dB
±12
±13.5
±12
±13.5
V
100
dB
Referred to input2
20 Hz < f < 20 kHz
100
IABC = 0, input = ±4 V
0.02
100
0.2
100
IABC = 0 (Refer to test circuit)
Input resistance
10
BW
Open-loop bandwidth
26
SR
Slew rate
Unity gain compensated
50
INBUFFER
Buffer input current
5
0.4
VOBUFFER
Peak buffer output voltage
5
10
2
Refer to Buffer VBE test circuit
0.02
10
0.2
5
5
nA
kΩ
2
MHz
0.4
V/µs
5
10
0.5
nA
26
50
5
10
3
V
V
80
RIN
∆VBE of buffer
650
3
350
300
µA
µA
µA/°C
0.01
1300
µA
µA/°C
0.001
5
8
mV
mV
mV
µV/°C
7
0.01
6700
5400
UNIT
Typ
µA
V
0.5
5
mV
NOTES:
1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to –VS and the input of the buffer is
connected to the transconductance amplifier output.
3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA.
2002 Dec 06
5
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
TYPICAL PERFORMANCE CHARACTERISTICS
VS = ±15V
3
2
INPUT OFFSET CURRENT (nA)
INPUT OFFSET VOLTAGE (mV)
4
+125°C
1
-55°C
0
-1
+25°C
+125°C
-2
Input Bias Current
10 3
-3
-4
-5
-6
VS = ±15V
10
VS = ±15V
2
-55°C
10
+25°C
+125°C
1
10
10
3
2
-55°C
10
+125°C
-7
+25°C
0.1
-8
10µA
100µA
0.1µA 1µA
1000µA
1
1000µA
5
PEAK OUTPUT VOLTAGE AND
COMMON-MODE RANGE (V)
VS = ±15V
+125°C
10 3
+25°C
-55°C
10
4
VOUT
3
VCMR
RLOAD = ∞
0
Tamb = 25°C
-2
VCMR
-3
-4
-5
-6
100µA
1000µA
(+)VIN = (–)VIN = VOUT = 36V
VS = ±15V
-1
10µA
Leakage Current
10 5
2
1
0.1µA 1µA
AMPLIFIER BIAS CURRENT (IABC)
Peak Output Voltage and
Common-Mode Range
Peak Output Current
10 2
100µA
AMPLIFIER BIAS CURRENT (IABC)
AMPLIFIER BIAS CURRENT (IABC)
10 4
10µA
LEAKAGE CURRENT (pA)
0.1µA 1µA
PEAK OUTPUT CURRENT ( µ A)
Input Bias Current
10 4
INPUT BIAS CURRENT (nA)
Input Offset Voltage
5
10 4
10 3
0V
10 2
VOUT
-7
0.1µA 1µA
10µA
100µA
0.1µA 1µA
AMPLIFIER BIAS CURRENT (IABC)
Input Leakage
TRANSCONDUCTANCE (gM) — ( µ ohm)
INPUT LEAKAGE CURRENT (pA)
+125°C
10 3
10 2
+25°C
10
100µA
1000µA
7
Transconductance
10 5
gM
10 4
mq
m
M
VS = ±15V
-55°C
+125°C
+25°C
0.1µA 1µA
10µA
100µA
1000µA
AMPLIFIER BIAS CURRENT (IABC)
Input Resistance
PINS 2, 15
OPEN
10
10 2
0°C 25°C 50°C 75°C100°C125°C
AMBIENT TEMPERATURE (TA)
10 2
PINS 2, 15
OPEN
10 3
10
1
1
2
3
4
5
6
INPUT DIFFERENTIAL VOLTAGE
10µA
AMPLIFIER BIAS CURRENT (IABC)
10 4
0
10
-50°C -25°C
-8
1000µA
INPUT RESISTANCE (MEG Ω )
1
1
1
0.1
0.01
0.1µA 1µA
10µA
100µA
1000µA
AMPLIFIER BIAS CURRENT (IABC)
SL00309
Figure 4. Typical Performance Characteristics
2002 Dec 06
6
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Amplifier Bias Voltage vs
Amplifier Bias Current
7
2000
100
VS = ±15V
1800
Tamb = +25°C
RL = 10kΩ
OUTPUT DISTORTION (%)
6
-55°C
1600
1400
CAPACITANCE (pF)
AMPLIFIER BIAS VOLTAGE (mV)
Distortion vs Differential
Input Voltage
Input and Output Capacitance
+25°C
1200
1000
+125°C
800
600
5
CIN
4
COUT
3
2
IABC = 1mA
10
1
0.1
400
1
200
0
0.1µA
1µA
10µA
100µA
1000µA
0
0.01
0.1µA 1µA
10µA
100µA
AMPLIFIER BIAS CURRENT (IABC)
AMPLIFIER BIAS CURRENT (IABC)
Voltage vs Amplifier Bias Current
0
Noise vs Frequency
600
VS = ±15V
OUTPUT NOISE CURRENT (pA/Hz)
OUTPUT VOLTAGE RELATIVE TO
1 VOLT RMS (dB)
20
RL = 10kΩ
VIN = 80mVP-P
-20
VIN = 40mVP-P
-40
-60
OUTPUT NOISE
20kHz BW
-80
-100
0.1µA 1µA
1
10
100
1000
DIFFERENTIAL INPUT VOLTAGE (mVP-P)
1000µA
10µA
100µA
500
400
300
100
0
10
1000µA
IABC AMPLIFIER BIAS CURRENT (µA)
IABC = 1mA
200
IABC = 100µA
100
1k
10k
FREQUENCY (Hz)
Figure 5. Typical Performance Characteristics (cont.)
2002 Dec 06
7
100k
SL00310
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
+36V
4, 13
A
+15V
4V
–
11
4, 13
A
5, 12
2, 15
–
5, 12
2, 15
NE5517
NE5517
8, 9
1, 15
3, 14
1, 10
3, 14
6
+
11
7, 10
+
6
–15V
Leakage Current Test Circuit
Differential Input Current Test Circuit
V+
V
50kΩ
V–
Buffer VBE Test Circuit
SL00311
Figure 6. Typical Performance Characteristics (cont.)
APPLICATIONS
+15V
INPUT
0.01µF
3, 14
10k
62k
–
390pF
51Ω
11
1, 16
2, 15
7, 10
NE5517
1.3k
5, 12
4, 13
8, 9
OUTPUT
6 0.01µF
+
5k
–15V
10k
–15V
0.001µF
Unity Gain Follower
Figure 7. Applications
2002 Dec 06
8
SL00312
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
For the diodes and the input transistors that have identical
geometries and are subject to similar voltages and temperatures,
the following equation is true:
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the AU5517/NE5517, a
dual operational transconductance amplifier with linearizing diodes
and impedance buffers, is shown in Figure 8.
ID
) IS
1ń2(I B ) I O)
2
T
KT
+ q In
q In I
1ń2(I
D
B * I O)
* IS
2
ID
2 IB
IO + IS
for |I S| t
2
ID
1. Transconductance Amplifier
The transistor pair, Q4 and Q5, forms a transconductance stage. The
ratio of their collector currents (I4 and I5, respectively) is defined by
the differential input voltage, VIN, which is shown in equation 1.
I5
KT
V IN + q In
I4
(1)
The only limitation is that the signal current should not exceed ID.
3. Impedance Buffer
Where VIN is the difference of the two input voltages
The upper limit of transconductance is defined by the maximum
value of IB (2 mA). The lowest value of IB for which the amplifier will
function therefore determines the overall dynamic range. At low
values of IB, a buffer with very low input bias current is desired. A
Darlington amplifier with constant-current source (Q14, Q15, Q16, D7,
D8, and R1) suits the need.
KT ≅ 26 mV at room temperature (300 °k).
Transistors Q1, Q2 and diode D1 form a current mirror which focuses
the sum of current I4 and I5 to be equal to amplifier bias current IB:
I4 + I5 = IB
(2)
If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor
series of In function can be approximated as
KT
KT I 5 * I 4
q In I 4 [ q
I4
I5
APPLICATIONS
Voltage-Controlled Amplifier
(3)
In Figure 10, the voltage divider R2, R3 divides the input-voltage into
small values (mV range) so the amplifier operates in a linear
manner.
and I4 ≅ I5 ≅ IB
KT I 5
KT I 5 * I 4
2KT I 5 * I 4
+ V IN
q In I 4 [ q 1ń2I + q
I
B
I 5 * I 4 + V IN
ǒ I B qǓ
It is:
(4)
B
I OUT + * V IN @
2KT
ǒ
Ǔ
q
2KT
+ IO
ǒI B Ǔ
A+
(5)
V OUT
V IN
+
R3
R2 ) R3
@ gM @ R L
(gM in µmhos for IABC in mA)
is then the transconductance of the amplifier and is
Since gM is directly proportional to IABC, the amplification is
controlled by the voltage VC in a simple way.
2KT
proportional to IB.
When VC is taken relative to –VCC the following formula is valid:
2. Linearizing Diodes
For VIN greater than a few millivolts, equation 3 becomes invalid and
the transconductance increases non-linearly. Figure 9 shows how
the internal diodes can linearize the transfer function of the
operational amplifier. Assume D2 and D3 are biased with current
sources and the input signal current is IS. Since
I ABC +
(V C * 1.2V)
R1
The 1.2 V is the voltage across two base-emitter baths in the current
mirrors. This circuit is the base for many applications of the
AU5517/NE5517.
I4 + I5 = IB and I5 – I4 = I0, that is:
I4 = (IB – I0), I5 = (IB + I0)
2002 Dec 06
@ gM;
(3) gM = 19.2 IABC
q
The term
R3
R2 ) R3
V OUT + I OUT @ R L;
The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form
three current mirrors that produce an output current equal to I5
minus I4. Thus:
V IN I B
(6)
9
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
V+
11
D6
D4
Q14
Q6
Q10
Q12
Q13
7,10
8,9
Q7
Q11
2,15
VOUTPUT
D3
D2
Q4
–INPUT
4,13
Q5
5,12
+INPUT
3,14
Q15
1,16
AMP BIAS
INPUT
Q16
Q3
Q2
D7
Q9
R1
Q1
D8
Q8
D1
D5
V–
6
SL00313
Figure 8. Circuit Diagram of NE5517
Voltage-Controlled Resistor (VCR)
+VS
Because an OTA is capable of producing an output current
proportional to the input voltage, a voltage variable resistor can be
made. Figure 13 shows how this is done. A voltage presented at the
RX terminals forces a voltage at the input. This voltage is multiplied
by gM and thereby forces a current through the RX terminals:
ID
I
ID
2
I
ID
S
2
I0 2 I
I
I
B
D
I0 I5 I4
S
RX =
I5
I4
D3
S
Q4
I5
Voltage-Controlled Filters
IS
Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is
a unity gain buffer until XC/gM is equal to R/RA. Then, the frequency
response rolls off at a 6dB per octave with the –3 dB point being
defined by the given equations. Operating in the same manner, a
Voltage Controlled High-Pass Filter is shown in Figure 16. Higher
order filters can be made using additional amplifiers as shown in
Figures 17 and 18.
1/2ID
IB
–VS
SL00314
Figure 9. Linearizing Diode
Voltage-Controlled Oscillators
Stereo Amplifier With Gain Control
Figure 19 shows a voltage-controlled triangle-square wave
generator. With the indicated values a range from 2 Hz to 200 kHz is
possible by varying IABC from 1 mA to 10 µA.
Figure 11 shows a stereo amplifier with variable gain via a control
input. Excellent tracking of typical 0.3 dB is easy to achieve. With
the potentiometer, RP, the offset can be adjusted. For AC-coupled
amplifiers, the potentiometer may be replaced with two 510 Ω
resistors.
The output amplitude is determined by IOUT × ROUT.
Please notice the differential input voltage is not allowed to be above
5 V.
Modulators
Because the transconductance of an OTA (Operational
Transconductance Amplifier) is directly proportional to IABC, the
amplification of a signal can be controlled easily. The output current
is the product from transconductance×input voltage. The circuit is
effective up to approximately 200 kHz. Modulation of 99% is easy to
achieve.
2002 Dec 06
RA
RA
where gM is approximately 19.21 µMHOs at room temperature.
Figure 14 shows a Voltage Controlled Resistor using linearizing
diodes. This improves the noise performance of the resistor.
D2
1/2ID
IS
R
gM
With a slight modification of this circuit you can get the sawtooth
pulse generator, as shown in Figure 20.
10
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
transistors. The output current range of the DAC normally reaches
from 0 to –2 mA. In this application, however, the current range is
set through RREF (10 kΩ) to 0 to –1 mA.
APPLICATION HINTS
To hold the transconductance gM within the linear range, IABC
should be chosen not greater than 1 mA. The current mirror ratio
should be as accurate as possible over the entire current range. A
current mirror with only two transistors is not recommended. A
suitable current mirror can be built with a PNP transistor array which
causes excellent matching and thermal coupling among the
2
I DACMAX
V REF
R REF
2
5V
10kW
1mA
INT
+VCC
VC
+VCC
R1
R4 = R2/ /R3
3
+
IABC
1
11
5
7
NE5517
R2
VIN
6
–
8
4
IOUT
VOUT
RL
RS
R3
INT
–VCC
TYPICAL VALUES: R1 = 47k
R2 = 10k
R3 = 200Ω
R4 = 200Ω
RL = 100k
RS = 47k
SL00315
Figure 10.
+VCC
10k
3
VIN1
RIN
+
11
1k
RP
+VCC
NE5517/A
RD
IABC
–
VIN2
8
1
4
VC
INT
+VCC
15k
VOUT1
RL
10k
30k
5.1k
RC
10k
14
RIN
15k
1k
RP
+VCC
16
+
–VCC
IABC
15
+VCC
10
NE5517/A
12
RD
9
6
–
13
VOUT2
RL
10k
RS
–VCC
INT
Figure 11. Gain-Controlled Stereo Amplifier
2002 Dec 06
11
SL00316
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
RC
30k
VIN2
SIGNAL
1
IABC
+VCC
11
ID
3
15k
2
5
NE5517/A
1k
VOS
INT
+VCC
+
7
–
VIN1
CARRIER
8
4
RL
10k
10k
VOUT
RS
6
–VCC
–VCC
INT
SL00317
Figure 12. Amplitude Modulator
R
R
30k
+VCC
3
RA
gM RA
VC
INT
+VCC
11
+
X
IO
2
NE5517/A
5
7
C
–
4
200
200
VOUT
8
RX
–VCC
R
100k
10k
–VCC
INT
SL00318
Figure 13. VCR
+VCC
VC
+VCC
ID
3
VOS
30k
1
RP
INT
+VCC
11
2
NE5517/A
1k
5
7
C
6
4
8
RX
–VCC
R
100k
10k
–VCC
INT
Figure 14. VCR with Linearizing Diodes
2002 Dec 06
12
SL00319
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
1
+VCC
100k
VIN
3
30k
VC
IABC
INT
+VCC
11
+
2
NE5517/A
5
–
6
4
200
8
VOUT
200
RA
7
C
150pF
R
100k
–VCC
10k
–VCC
INT
NOTE:
f
O
g(R
RA gM
RA) 2pC
SL00320
Figure 15. Voltage-Controlled Low-Pass Filter
1
+VCC
+VCC
100k
VOS
NULL
30k
3
VC
IABC
INT
+VCC
11
+
2
NE5517/A
5
-VCC
–
6
RA
1k
8
0.005µF
4
1k
7
C
VOUT
R
100k
–VCC
10k
–VCC
INT
NOTE:
f
O
g(R
RA gM
RA) 2pC
SL00321
Figure 16. Voltage-Controlled High-Pass Filter
15k
VC
+VCC
+VCC
NE5517/A
–
100pF
200
RA
NE5517/A
100k
C
–
200
INT
+VCC
+
+
VIN
–VCC
R
100k
10k
RA
100k
2C
200pF
VOUT
RA
200
10k
200
-VCC
–VCC
INT
NOTE:
f
O
R A gM
(R
R A) 2p C
SL00322
Figure 17. Butterworth Filter – 2nd Order
2002 Dec 06
13
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
1
15k
16
VC
+VCC
+VCC
10k
3
14
+
11
5
2
7
12
NE5517/A
–
INT
+VCC
+
6
–
800pF
10
NE5517/A
15
20k
LOW
PASS
VOUT
800pF
13
9
1k
–VCC
1k
5.1k
20k
20k
5.1k
–VCC
–VCC
INT
BANDPASS OUT
SL00323
Figure 18. State Variable Filter
30k
+VCC
VC
+VCC
4
INT +VCC
–
11
1
5
7
12
+
10
NE5517/A
NE5517/A
3
INT
+VCC
47k
13
–
C
0.1µF
6
–VCC
16
+
8
14
VOUT2
9
20k
10k
–VCC
INT
–VCC VOUT1
GAIN
CONTROL
SL00324
Figure 19. Triangle-Square Wave Generator (VCO)
IB
IC
470k
1
+VCC
VC
+VCC
4
+
3
R1
30k
6
–VCC
+VCC
30k
11
–
7
12
10
NE5517/A
NE5517/A
–
INT
47k
13
5
2
16
INT +VCC
C
0.1µF
+
8
14
R2
20k
30k
–VCC
–VCC VOUT1
NOTE:
(V
V
PK
I
0.8) R 1
2V PK x C
2V PKxC
C
C
T
T f
I H
L
OSC 2V xC C
R1
R2
IB
I
PK
C
VOUT2
INT
I
B
SL00325
Figure 20. Sawtooth Pulse VCO
2002 Dec 06
14
Philips Semiconductor
Product data
Dual operational transconductance amplifier
DIP16: plastic dual in-line package; 16 leads (300 mil)
2002 Dec 06
15
NE5517/NE5517A/
AU5517
SOT38-4
Philips Semiconductor
Product data
Dual operational transconductance amplifier
SO16: plastic small outline package; 16 leads; body width 3.9 mm
2002 Dec 06
16
NE5517/NE5517A/
AU5517
SOT109-1
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
REVISION HISTORY
Rev
Date
Description
_3
20021206
Product data (9397 750 10796); type number AU5517 added. ECN 853–0887 29176 of 08 November 2002;
supersedes Product data NE5517_NE5517A version 2 of 03 August 2001.
Modifications:
• Type number AU5517 added.
• “Description” section edited.
_2
20010803
2002 Dec 06
Product data (9397 750 09175); NE5517/NE5517A only; ECN 853–0887 26833 of 2001 Aug 03 .
17
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
Data sheet status
Level
Data sheet status [1]
Product
status [2] [3]
Definitions
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
 Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Contact information
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 12-02
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
2002 Dec 06
18
9397 750 10796
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.