TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Applications




Commercial VSAT
Military Satcom
Datalinks
Radar
Product Features
Functional Block Diagram
 Frequency Range: 13.4 – 16.5 GHz
 Pout: 44 dBm @ PIN = 16 dBm
 PAE: > 31% @ PIN = 16 dBm
 Large Signal Gain: 28 dB @ PIN = 16 dBm
 Small Signal Gain: > 30 dB
 Bias: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical
 Package base is pure Cu offering superior thermal
management
 Process Technology: TQGaN15
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
1
10
2
3
4
5
9
8
7
6
General Description
TriQuint’s TGA2219-CP is a 3-stage, 25 W power
amplifier operating over the 13.4 to 16.5 GHz band.
Fabricated on TriQuint’s production 0.15um GaN on SiC
technology, this high performance amplifier offers >
30dB small-signal gain with 31% PAE, allowing the
system designer to achieve superior performance levels
in a cost efficient manner.
The TGA2219-CP is offered in a 10-lead 15 x 15 mm
bolt-down package. Assembled with a pure-copper
base, coupled with its high efficiency, the TGA2219-CP
minimizes the strain on the system-level cooling
requirements, further reducing system operating costs.
Superior
electrical
performance
and
thermal
management makes the TGA2219-CP ideal for
supporting communications and radar applications in
both commercial and military markets.
Pin Configuration
Pad No.
Symbol
1, 5
2, 4, 7, 9
3
6, 10
8
VG
GND
RFIN
VD
RFOUT
Ordering Information
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 Ohms.
Part
ECCN
Description
Lead free and RoHS compliant.
TGA2219-CP
3A001.b.2.c
13.4 – 16.5 GHz,
25 W GaN Power
Amplifier
Evaluation Boards are available upon request.
Datasheet: 09-15-15
© 2015 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Recommended Operating Conditions
Value
Parameter
Power Dissipation (PDISS), 85°C
80 W
Input Power (PIN), CW, 50Ω,
VD = 28 V, IDQ = 450 mA, 85°C
30 dBm
Input Power (PIN), CW, VSWR 3:1,
VD = 28 V, IDQ = 450 mA, 85°C
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
Drain Voltage (VD)
Drain Current (IDQ)
Gate Voltage (VG)
29.5 V
-8 to 0 V
7.2 A
See plot on page 3
28 V
450 mA
−2.7 V (Typ.)
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
27 dBm
275 °C
260 °C
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 28 V, IDQ = 450 mA, VG = −2.7 V Typ, CW.
Parameter
Min
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @ Pin = 16 dBm
Power Added Efficiency @ Pin = 16 dBm
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
(Temp: -40°C – 85°C @ Pin = 16dBm)
Recommended Operating Voltage
13.4
Datasheet: 09-15-15
© 2015 TriQuint
Typical
Max
Units
16.5
> 30
> 15
>5
44
> 31
-0.08
GHz
dB
dB
dB
dBm
%
dB/°C
-0.011
dBm/°C
20 to 28
- 2 of 14 -
28
V
Disclaimer: Subject to change without notice
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
Units
2.38
°C/W
115
°C
5.58E+11
Hrs
2.39
°C/W
221
°C
1.02E+7
Hrs
TBASE = 85°C, VD = 28 V (CW)
At IDQ = 450 mA, PDISS = 12.8 W
Channel Temperature (TCH) (Quiescent)
Median Lifetime (TM)
Thermal Resistance (θJC)
Value
(1)
(1)
TBASE = 85°C, VD = 28 V (CW)
At Freq = 14 GHz, PIN = 18 dBm:
Channel Temperature (TCH) (Under RF drive)
IDQ = 450 mA, ID_Drive = 2.9 A
POUT = 44 dBm, PDISS = 57 W
Median Lifetime (TM)
Notes:
1.
Thermal resistance measured to back of package.
Median Lifetime
Test Conditions: VD = 28 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
Total IG_MAX vs. TCH
120
Maximum Gate Current (mA)
Median Lifetime, TM (Hours)
110
100
90
80
70
60
50
40
30
20
10
FET16
0
75
100
125
150
175
200
225
250
275
125
135
145
Channel Temperature, TCH (C)
Thermal Resistance vs. PDISS
4.0
TBASE = +85 C
3.5
PDISS (W)
RJC (C°/W)
3.0
2.5
2.0
1.5
1.0
10
15
20
25
30
35
40
45
50
55
60
65
165
175
185
195
205
215
225
16.5
17
PDISS vs. Frequency vs. TBASE
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
VD = 28 V, IDQ = 450 mA
-40 °C, PIN = 12 dBm
25 °C, PIN = 16 dBm
85 ° C, P IN = 18 dBm
12
70
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
PDISS (W)
Datasheet: 09-15-15
© 2015 TriQuint
155
Channel Temperature (°C)
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
Gain vs. Frequency vs. Temperature
46
43
Temp = 25 °C
38
40
37
34
S21 (dB)
34
S21 (dB)
Gain vs. Frequency vs. Current
42
VD = 28 V, IDQ = 450 mA
31
28
25
22
30
26
22
675 mA
19
-40 °C
16
25 °C
13
85 °C
18
450 mA
225 mA
14
VD = 28 V
10
10
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
Frequency (GHz)
38
Gain vs. Frequency vs. Drain Voltage
Temp = 25 °C
36
34
S21 (dB)
32
30
28
26
20 V
24
24 V
22
28 V
20
IDQ = 450 mA
18
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
0
Input Return Loss vs. Frequency vs. Temp.
0
VD = 28 V, IDQ = 450 mA
-3
VD = 28 V, IDQ = 450 mA
-1
-6
-2
-40 °C
25 °C
-12
85 °C
-15
-18
S22 (dB)
-40 °C
-9
S11 (dB)
Output Return Loss vs. Frequency vs. Temp.
-3
25 °C
-4
85 °C
-5
-6
-21
-7
-24
-8
-27
-9
-30
-10
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
Frequency (GHz)
Datasheet: 09-15-15
© 2015 TriQuint
- 4 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, -2.7 V Typical, CW.
Output Power vs. Frequency vs. Voltage
48
Temp. = 25 °C
PIN = 16 dBm
45
46
44
44
Output Power (dBm)
Output Power (dBm)
Output Power vs. Frequency vs. Temp.
46
42
40
38
20 V
24 V
28 V
36
43
42
41
40
-40 °C, PIN = 12 dBm
25 °C, PIN = 16 dBm
85 °C, PIN = 18 dBm
39
38
37
36
34
35
IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
34
32
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
12
17
12.5
13
13.5
14.5
15
15.5
16
16.5
17
Output Power vs. Frequency vs. PIN
Output Power vs. Input Power vs. Voltage
46
Temp. = 25 °C
Temp. = 25 °C
45
Freq. = 15.5 GHz
Output Power (dBm)
Output Power (dBm)
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
14
Frequency (GHz)
Frequency (GHz)
20 V
24 V
28 V
44
43
42
16 dBm
17 dBm
18 dBm
19 dBm
20 dBm
41
40
39
IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
38
-5 -3 -1
1
3
5
7
9
11 13 15 17 19 21 23 25
12
12.5
13
13.5
Output Power (dBm)
Input Power (dBm)
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
14
14.5
15
15.5
16
16.5
17
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
Temp. = 25 °C
VD = 28 V, IDQ = 450 mA
13.75 GHz 14.50 GHz
-5 -3 -1
1
3
5
7
9
15.50 GHz
16.50 GHz
11 13 15 17 19 21 23 25
Input Power (dBm)
Datasheet: 09-15-15
© 2015 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
PAE vs. Frequency vs. Drain Voltage
45
PAE vs. Frequency vs. Temperature
40
Temp. = 25 °C
37
40
34
35
PAE (%)
PAE (%)
31
30
25
20
25
22
20 V
24 V
28 V
15
28
-40 °C, PIN = 12 dBm
25 °C, PIN = 16 dBm
85 °C, PIN = 18 dBm
19
16
10
13
PIN = 16
10 dBm
IDQ = 450
500 mA
VD = 28 V, IDQ = 450 mA
10
5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
12
17
12.5
13
13.5
45
PAE vs. Input Power vs. Drain Voltage
Temp. = 25 °C
15
15.5
VD = 28 V, IDQ = 450 mA
37
16
16.5
17
Temp. = 25 °C
34
35
31
PAE (%)
30
PAE (%)
14.5
PAE vs. Frequency vs. PIN
40
Freq. = 15.5 GHz
40
14
Frequency (GHz)
Frequency (GHz)
25
20
20 V
24 V
28 V
15
10
28
25
22
16 dBm
17 dBm
18 dBm
19 dBm
20 dBm
19
16
IDQ = 450 mA
5
13
10
0
-5 -3 -1
1
3
5
7
9
12
11 13 15 17 19 21 23 25
12.5
13
13.5
45
14
14.5
15
15.5
16
16.5
17
Frequency (GHz)
Input Power (dBm)
PAE vs. Input Power vs. Frequency
Temp. = 25 °C
VD = 28 V, IDQ = 450 mA
40
35
PAE (%)
30
25
20
15
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
10
5
0
-5 -3 -1
1
3
5
7
9
11 13 15 17 19 21 23 25
Input Power (dBm)
Datasheet: 09-15-15
© 2015 TriQuint
- 6 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
Drain Current vs. Freq. vs. Drain Voltage
4.0
Gate Current vs. Freq. vs. Drain Voltage
2.0
Temp. = 25 °C
IDQ = 450 mA
Temp. = 25 °C
3.5
PIN = 16 dBm
IDQ = 450 mA
1.5
Gate Current (mA)
Drain Current (A)
3.0
2.5
2.0
20 V
24 V
28 V
1.5
1.0
1.0
20 V
24 V
28 V
0.5
0.0
-0.5
0.5
PIN = 16 dBm
0.0
-1.0
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
12
12.5
13
13.5
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
4.0
14
14.5
15
15.5
16
16.5
17
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
45
VD = 28 V, IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
40
3.5
Gate Current (mA)
Drain Current (A)
35
3.0
2.5
2.0
-40 °C, PIN = 12 dBm
25 °C, PIN = 16 dBm
85 °C, PIN = 18 dBm
1.5
1.0
30
25
20
-40 °C, PIN = 12 dBm
25 °C, PIN = 12 dBm
85 °C, PIN = 18 dBm
15
10
5
0.5
0
0.0
-5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
12
12.5
13
13.5
14
Frequency (GHz)
Drain Current vs. Input Power vs. Voltage
45
4.0
Temp. = 25 °C
14.5
15
15.5
16
16.5
17
Frequency (GHz)
IDQ = 450 mA
40
3.5
Gate Current vs. Input Power vs. Voltage
Temp. = 25 °C
Freq. = 15.5 GHz
IDQ = 450 mA
2.5
2.0
1.5
20 V
24 V
28 V
1.0
Gate Current (mA)
Drain Current (A)
35
3.0
30
25
20
20 V
24 V
28 V
15
10
5
0.5
0
Freq. = 15.5 GHz
-5
0.0
-5
-3
-1
1
3
5
7
9
-5 -3 -1
11 13 15 17 19 21 23 25
Datasheet: 09-15-15
© 2015 TriQuint
1
3
5
7
9
11 13 15 17 19 21 23 25
Input Power (dBm)
Input Power (dBm)
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
Drain Current vs. Input Power vs. Freq.
4.0
VD = 28 V, IDQ = 450 mA
Temp. = 25 °C
3.0
Gate Current (mA)
Drain Current (A)
3.5
2.5
2.0
1.5
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
1.0
0.5
0.0
-5 -3 -1
1
3
5
7
9
Gate Current vs. Input Power vs. Freq.
60
55
50
45
40
35
30
25
20
15
10
5
0
-5
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
-5 -3 -1
11 13 15 17 19 21 23 25
VD = 28 V, IDQ = 450 mA
Temp. = 25 °C
1
3
5
Power Gain vs. Frequency vs. Drain Voltage
30
29
29
28
28
27
27
Power Gain (dB)
Power Gain (dB)
Temp. = 25 °C
26
25
20 V
24 V
28 V
23
22
11 13 15 17 19 21 23 25
VD = 28 V, IDQ = 450 mA
26
25
24
23
16 dBm
17 dBm
18 dBm
19 dBm
20 dBm
22
21
21
PIN = 16 dBm
IDQ = 450 mA
20
20
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
12
12.5
13
13.5
Frequency (GHz)
36
VD = 28 V, IDQ = 450 mA
15
15.5
16
16.5
17
34
32
28
Power Gain (dB)
30
30
28
26
22
14.5
Power Gain vs. Frequency vs. Temperature
36
Temp. = 25 °C
32
24
14
Frequency (GHz)
Power Gain vs. Input Power vs. Freq.
34
Power Gain (dB)
9
Power Gain vs. Frequency vs. PIN
30
Temp. = 25 °C
24
7
Input Power (dBm)
Input Power (dBm)
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
26
24
22
18
16
20
14
18
12
-5 -3 -1
-40 °C, PIN = 12 dBm
25 °C, PIN = 16 dBm
85 °C, PIN = 18 dBm
20
1
3
5
7
9
12
11 13 15 17 19 21 23 25
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
Frequency (GHz)
Input Power (dBm)
Datasheet: 09-15-15
© 2015 TriQuint
VD = 28 V, IDQ = 450 mA
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Linearity
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
IM3 vs. Output Power. vs. Frequency
0
IM5 vs. Output Power. vs. Frequency
-10
1 MHz Tone Spacing
VD = 28 V, IDQ = 450 mA
Temp. = 25 C
-10
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
-30
IM5 (dBc)
IM3 (dBc)
-20
-30
-40
13.75 GHz
14.50 GHz
15.50 GHz
16.50 GHz
-50
22
24
-50
-70
1 MHz Tone Spacing
Temp. = 25 C
20
-40
-60
-80
-60
26
28
30
32
34
36
38
40
20
42
22
24
IM3 vs. Output Power. vs. Voltage
0
Temp.
Temp. == 25
25 C
C
26
28
32
34
36
38
40
42
IM5 vs. Output Power. vs. Voltage
-10
IDQ = 450 mA
Temp. = 25 C
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-20
-10
20 V
24 V
GHz
28 V
-30
IM5 (dBc)
-20
-30
-40
-40
-50
20 V
24 V
GHz
28 V
-60
-50
-70
IDQ = 450 mA
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-80
-60
15
20
25
30
35
40
15
45
20
25
IM3 vs. Output Power. vs. Temperature
0
30
35
40
45
Output Power Per Tone (dBm)
Output Power Per Tone (dBm)
IM5 vs. Output Power. vs. Temperature
-10
VD = 28 V, IDQ = 450 mA
VD = 28 V, IDQ = 450 mA
-20
-10
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-30
IM5 (dBc)
-20
IM3 (dBc)
30
Output Power Per Tone (dBm)
Output Power Per Tone (dBm)
IM3 (dBc)
VD = 28 V, IDQ = 450 mA
-20
-30
-40 C
25 C
GHz
85 C
-40
-40
-50
-60
-50
-40 C
25 C
85 C
-70
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-60
-80
20
22
24
26
28
30
32
34
36
38
40
42
20
Output Power Per Tone (dBm)
Datasheet: 09-15-15
© 2015 TriQuint
22
24
26
28
30
32
34
36
38
40
42
Output Power Per Tone (dBm)
- 9 of 14 -
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 450 mA, VG = -2.7 V Typical, CW.
IM3 vs. Output Power. vs. Current
0
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-20
-10
VD = 28 V
-30
-20
225 mA
450 mA
675 mA
-30
IM5 (dBc)
IM3 (dBc)
IM5 vs. Output Power. vs. Current
-10
VD = 28 V
Temp. = 25 C
-40
225 mA
450 mA
675 mA
-40
-50
-60
-50
-70
Temp. = 25 C
Freq. = 15.5 GHz, 1 MHz Tone Spacing
-60
-80
10
15
20
25
30
35
40
45
10
15
20
Output Power Per Tone (dBm)
2nd Harmonic vs. Output Power. vs.Temp.
-10
-25
VD = 28 V, IDQ = 450 mA
-15
-30
Freq. = 15.5 GHz
-20
2nd Harmonic (dBc)
2nd Harmonic (dBc)
-20
25
30
35
40
45
Output Power Per Tone (dBm)
-35
-40
-45
-50
-55
2nd Harmonic vs. Output Power. vs. Freq.
Temp. = 25 C
VD = 28 V, IDQ = 450 mA
-25
-30
-35
-40
-45
-50
-60
-40 C
-65
25 C 85 C
-55
13.75 GHz
14.5 GHz
15.5 GHz
16.5 GHz
36
39
42
-60
-70
25
30
35
40
30
45
Datasheet: 09-15-15
© 2015 TriQuint
33
45
Output Power (dBm)
Output Power (dBm)
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TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Applications Information and Pin Layout
C5
10 uF
R3
5.1 Ohms
C3
0.01 uF
C9
0.01 uF
1
2
RF IN 3
Vg
C6
10 uF
R7
5.1 Ohms
10
9
8 RF OUT
7
6
4
5
R4
5.1 Ohms
C11
10 uF
C4
0.01 uF
C10
0.01 uF
Vd
R8
5.1 Ohms
C12
10 uF
Notes: VG and VD can be biased from either side of top or bottom.
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 3.5 A, IG limit to 65 mA
2. Apply −5 V to VG
3. Apply +28 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 450 mA (VG ~ −2.7 V Typ.).
5. Turn on RF supply
1. Turn off RF supply
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pin No.
Symbol
Description
1,5
VG
Gate Voltage; Bias network is required; see recommended
Application Information above.
3
RFIN
Input; matched to 50 Ω; DC blocked
2,4,7,9
GND
Must be grounded on the PCB.
6,10
VD
Drain voltage; Bias network is required; see recommended
Application Information above.
8
RFOUT
Output; matched to 50 Ω; DC blocked
Datasheet: 09-15-15
© 2015 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Evaluation Board
NOTE: VG and VD can be biased from either side of top or bottom.
Bill of Material
Reference Des.
Value
Description
Manuf.
C3, C4, C9, C10
0.01 μF
Cap, 0402, 50 V, 10%, X7R
Various
C5, C6, C11, C12
10 μF
Cap, 1206, 50 V, 20%, X5R
Various
Res, 0402, 50V, 5%
Various
R3, R4, R7, R8
5.1 Ohm
Part Number
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2219-CP to the board.
3. To improve the thermal and RF performance, we recommend the following:
a. Apply a small amount thermal compound (Arctic Silver) or 4 mils indium shim between the package
and the board.
b. Attach a heat sink to the bottom of the board and apply thermal grease or 4 mils indium shim between
the heat sink and the board.
4. Apply solder to each pin of the TGA2219-CP.
5. Clean the assembly with alcohol.
Datasheet: 09-15-15
© 2015 TriQuint
- 12 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Mechanical Information
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: LCD (Liquid Crystal Polymer)
All metalized features are gold plated
Part is epoxy sealed
Marking:
2219-CP: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
Datasheet: 09-15-15
© 2015 TriQuint
- 13 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2219-CP
13.4 to 16.5 GHz, 25W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
Compatible with the latest version of J-STD-020, Leadfree solder, 260°C
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
TBD
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
MSL Rating
 Antimony Free
 TBBP-A (C15H12Br402) Free
Level 5A at 260 °C convection reflow.
 PFOS Free
The part is rated Moisture Sensitivity Level 5A at 260 °C per
 SVHC Free
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: 3A001.b.2.c
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: 09-15-15
© 2015 TriQuint
- 14 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com