TGM2635-CP
X-Band 100 W GaN Power Amplifier
Applications
• X-band Radar
• Satellite Communications
• Data Links
Product Features
Functional Block Diagram
• Frequency Range: 7.9 – 11 GHz
• PSAT: > 50 dBm (PIN = 28 dBm)
• PAE: > 35% (PIN = 28 dBm)
• Large Signal Gain: > 22 dB (PIN = 28 dBm)
•
•
•
•
Small Signal Gain: > 26 dB
Bias: VD = 28 V, IDQ = 1.3 A, VG = -2.6 V Typical
Package Dimensions: 19.05 x 19.05 x 4.52 mm
Performance Under Pulsed Operation
General Description
Pad Configuration
Qorvo’s TGM2635–CP is a packaged X-band, high
power amplifier fabricated on Qorvo’s production 0.25um
GaN on SiC process. The TGM2635–CP operates from
7.9 – 11 GHz and provides 100 W of saturated output
power with 22.5 dB of large signal gain and greater than
35 % power–added efficiency.
Pad No.
Symbol
1
2, 4, 7, 9
3
5
6
8
10
VG1
GND
RF Input
VG2
VD2
RF Output
VD1
The TGM2635-CP is packaged in a 10-lead 19.05 x
19.05 mm bolt-down package with a pure Cu base for
superior thermal management. Both RF ports are
internally DC blocked and matched to 50 ohms allowing
for simple system integration.
The TGM2635-CP is ideally suited for both military and
commercial
X–Band
radar
systems,
satellite
communications systems, and data links.
Ordering Information
Lead-free and RoHS compliant.
Part
Evaluation boards are available upon request.
Datasheet: Rev - 11-30-15
© 2015 TriQuint
TGM2635-CP
- 1 of 14 -
ECCN
3A001.b.2.b
Description
X-band 100 W GaN
Power Amplifier
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG) at TCH = 200 °C
Power Dissipation (PDISS), 85°C, Pulsed;
PW = 100 us, DC = 10%
Input Power (PIN), 50 Ω, 85°C , VD = 28 V,
Pulsed; PW = 100 us, DC = 10%
Input Power (PIN), 85°C, VSWR 3:1,
VD = 28 V, Pulsed; PW = 100 us, DC =
10%
Channel Temperature (TCH)
Mounting Temperature (30 seconds)
Storage Temperature
Recommended Operating Conditions
Value
Parameter
40 V
-8 to -0 V
16 A
-52 / 124 mA
316 W
Value
Drain Voltage (VD)
Drain Current (IDQ)
Gate Voltage (VG)
Operating Temperature Range
28 V
1.3 A (Total)
-2.6 V (Typ.)
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
33 dBm
33 dBm
275 °C
260 °C
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C , VD = 28 V, IDQ = 1.3 A, VG = -2.6 V Typical, PW = 100 us, Duty Cycle = 10%
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Power Gain (PIN = 28 dBm), Pulsed
Output Power (PIN = 28 dBm), Pulsed
Power Added Efficiency (PIN = 28 dBm), Pulsed
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
(Temp: 25 °C – 85 °C, PIN = 28 dBm)
Recommended Operating Voltage
Datasheet: Rev - 11-30-15
© 2015 TriQuint
Min
Typical
Max
Units
11
> 26
> 12
> 12
> 22.5
> 50
GHz
dB
dB
dB
dB
dBm
> 35
-0.064
%
dB/°C
-0.010
dB/°C
7.9
20
- 2 of 14 -
28
30
V
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Tbase = 85°C
VD = 28 V, IDQ = 1.3 A
PDISS = 36.4 W
0.60
107
ºC/W
°C
3.44E11
Hrs
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 28 V, IDQ = 1.3 A, Freq = 9.0
Channel Temperature (TCH) (Under RF drive) GHz, ID_Drive = 11 A, PIN = 28 dBm, POUT = 50.0
dBm, PDISS = 173 W, PW = 100 us, DC = 10%
Median Lifetime (TM)
0.47
166
3.21E08
ºC/W
°C
Hrs
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 28 V, IDQ = 1.3 A, Freq = 9.0
Channel Temperature (TCH) (Under RF drive) GHz, ID_Drive = 12 A, PIN = 31 dBm, POUT = 50.5
dBm, PDISS = 195 W, PW = 100 us, DC = 10%
Median Lifetime (TM)
0.47
176
1.18E08
ºC/W
°C
Hrs
(1)
Thermal Resistance (θJC)
Channel Temperature (TCH) (No RF drive)
Median Lifetime (TM)
Notes:
1. Thermal resistance measured to back of package.
Median Lifetime
Test Conditions: VD = 28 V; Failure Criteria = 10% reduction in ID_MAX
TGM2635-CP Pdiss vs. Frequency
300
Disspiated Power (W)
250
200
150
100
25V 100us 10% 25C
50
28V 100us 10% 25C
30V 100us 10% 25C
0
7
TGM2635-CP PDISS vs. Freq. vs. TBASE
9
10
Frequency (GHz)
11
12
TGM2635-CP PDISS vs. Freq. vs. PIN
300
300
Temp = 25 °C, Pulse Width = 100 us, Duty Cycle = 10%
PIN = 28 dBm, Pulse Width = 100 us, Duty Cycle = 10%
250
Disspiated Power (W)
250
Disspiated Power (W)
8
200
150
100
200
150
100
50
50
-40 deg C
25 deg C
85 deg C
24 dBm
0
26 dBm
28 dBm
0
7
8
Datasheet: Rev - 11-30-15
© 2015 TriQuint
9
10
Frequency (GHz)
11
12
7
- 3 of 14 -
8
9
10
Frequency (GHz)
11
12
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
p
Typical Performance: Small Signal (CW)
Test conditions unless otherwise noted: 25 °C , VD = 28 V
Gain vs. Freq. vs. Temp.
35
VD = 28 V
IDQ = 1.3 A
30
VD = 28 V, IDQ = 1.3 A
-5
25
-10
S11 (dB)
S21 (dB)
Input RL vs. Freq. vs. Temp.
0
20
15
-15
-20
10
-25
5
-40C
+25C
+85C
0
-40C
-30
6
7
8
9
10
11
12
13
6
+25C
7
+85C
8
9
Frequency (GHz)
10
11
12
13
12
13
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
0
VD = 28 V, IDQ = 1.3 A
-5
S22 (dB)
-10
-15
-20
-25
-40C
+25C
+85C
-30
6
7
8
9
10
11
12
13
Frequency (GHz)
Gain vs. Frequency vs. IDQ
35
VD = 28 V, T = 25 °C
30
30
25
25
S21 (dB)
S21 (dB)
35
20
15
10
Gain vs. Frequency vs. VD
IDQ = 1.3 A, T = 25 °C
20
15
25 V
10
1.3 A
5
28 V
5
2.0 A
30 V
0
0
6
7
8
9
10
11
12
13
Frequency (GHz)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
6
7
8
9
10
11
Frequency (GHz)
- 4 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Small Signal (CW)
Test conditions unless otherwise noted: 25 °C , VD = 28 V
Input RL vs. Freq. vs. IDQ
0
Input RL vs. Frequency vs. VD
0
IDQ = 1.3 A, T = 25 °C
-5
-10
-10
S11 (dB)
S11 (dB)
VD = 28 V, T = 25 °C
-5
-15
-20
-15
-20
25 V
1.3 A
-25
-25
28 V
2.0 A
30 V
-30
-30
6
7
8
9
10
11
12
13
6
7
8
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
10
11
12
13
Output RL vs. Frequency vs. VD
0
IDQ = 1.3 A, T = 25 °C
VD = 28 V, T = 25 °C
-5
-5
-10
-10
S22 (dB)
S22 (dB)
9
Frequency (GHz)
-15
-20
-15
-20
25 V
1.3 A
-25
28 V
-25
2.0 A
30 V
-30
-30
6
7
8
9
10
11
12
13
Frequency (GHz)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
6
7
8
9
10
11
12
13
Frequency (GHz)
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Large Signal (Pulsed)
Test conditions unless otherwise noted: 25 °C , VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10%
Output Power vs. Frequency vs. Temp.
54
Output Power vs. Freq. vs. VD
54
VD = 28 V, IDQ = 1.3 A, PIN = 28 dBm
IDQ = 1.3 A, PIN = 28 dBm, T = 25 °C
52
Output Power (dBm)
Output Power (dBm)
52
50
48
46
44
42
50
48
46
44
25 V
28 V
30 V
42
-40 deg C
+25 deg C
+85 deg C
40
40
7
8
9
10
11
12
7
8
Frequency (GHz)
PAE vs. Frequency vs. Temp.
45
35
35
30
25
25
20
15
15
25 V
28 V
30 V
+85 deg C
10
7
8
9
10
11
12
7
8
Frequency (GHz)
Drain Current (A)
VD = 28 V, IDQ = 1.3 A, PIN = 28 dBm
-40 deg C
7
8
+25 deg C
9
10
10
11
12
+85 deg C
11
Drain Current vs. Frequency vs. VD
15
14
13
12
11
10
9
8
7
6
5
4
3
12
Frequency (GHz)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
9
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
15
14
13
12
11
10
9
8
7
6
5
4
3
12
30
20
10
Drain Current (A)
11
IDQ = 1.3 A, PIN = 28 dBm, T = 25 °C
40
PAE (%)
PAE (%)
VD = 28 V, IDQ = 1.3 A, PIN = 28 dBm
+25 deg C
10
PAE vs. Frequency vs. VD
45
40
-40 deg C
9
Frequency (GHz)
IDQ = 1.3 A, PIN = 28 dBm, T = 25 °C
25 V
28 V
30 V
7
8
9
10
11
12
Frequency (GHz)
- 6 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Large Signal (Pulsed)
Gate Current vs. Frequency vs. Temp.
10
9
8
7
6
5
4
3
2
1
0
-1
-2
VD = 28 V, IDQ = 1.3 A, PIN = 28 dBm
Gate Current (mA)
Gate Current (mA)
Test conditions unless otherwise noted: 25 °C , VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10%
-40 deg C
7
8
+25 deg C
9
+85 deg C
10
11
Gate Current vs. Frequency vs. VD
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
12
IDQ = 1.3 A, PIN = 28 dBm, T = 25 °C
25 V
28 V
30 V
7
8
Frequency (GHz)
Output Power vs. Frequency vs. PIN
54
11
12
VD = 28 V, IDQ = 1.3 A, T = 25 °C
52
40
50
35
PAE (%)
Output Power (dBm)
10
PAE vs. Frequency vs. PIN
45
VD = 28 V, IDQ = 1.3 A, T = 25 °C
48
46
44
30
25
20
42
24 dBm
26 dBm
28 dBm
29 dBm
15
40
24 dBm
26 dBm
28 dBm
29 dBm
10
7
8
9
10
11
12
7
8
Frequency (GHz)
Drain Current vs. Frequency vs. PIN
15
14
13
12
11
10
9
8
7
6
5
4
3
9
10
11
12
Frequency (GHz)
Gate Current vs. Frequency vs. PIN
1.2
VD = 28 V, IDQ = 1.3 A, T = 25 °C
VD = 28 V, IDQ = 1.3 A, T = 25 °C
1.0
Gate Current (mA)
Drain Current (A)
9
Frequency (GHz)
0.8
0.6
0.4
0.2
0.0
-0.2
24 dBm
26 dBm
28 dBm
29 dBm
-0.4
24 dBm
26 dBm
28 dBm
29 dBm
-0.6
7
8
9
10
11
12
Frequency (GHz)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
7
8
9
10
11
12
Frequency (GHz)
- 7 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Large Signal (Pulsed)
Test conditions unless otherwise noted: 25 °C , VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
45
VD = 28 V, IDQ = 1.3 A, Temp. = 25 °C
VD = 28 V, IDQ = 1.3A, Temp. = 25 °C
40
50
35
48
PAE (%)
Output Power (dBm)
52
46
44
30
25
20
42
15
8.0 GHz
40
14
16
18
20
22
9.5 GHz
24
26
8.0 GHz
11.0 GHz
28
30
14
16
18
20
11.0 GHz
22
24
26
28
30
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
1.0
VD = 28 V, IDQ = 1.3 A, Temp. = 25 °C
Gate Current vs. Input Power vs. Freq.
VD = 28 V, IDQ = 1.3 A, Temp. = 25 °C
0.8
Gate Current (A)
Drain Current (A)
Input Power (dBm)
15
14
13
12
11
10
9
8
7
6
5
4
3
9.5 GHz
10
0.6
0.4
0.2
0.0
-0.2
8.0 GHz
9.5 GHz
11.0 GHz
8.0 GHz
9.5 GHz
11.0 GHz
-0.4
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
14
16
18
20
22
24
26
28
30
Input Power (dBm)
- 8 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Large Signal (Pulsed)
2nd Harmonic vs. Frequency vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
VD = 28 V, IDQ = 1.3 A, Pin = 10 dBm
2nd Harmonic (dBc)
2nd Harmonic (dBc)
Test conditions unless otherwise noted: 25 °C , VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10%
-40C
7
8
+25C
9
+85C
10
11
2nd Harmonic vs. Frequency vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
12
VD = 28 V, IDQ = 1.3 A, Pin = 15 dBm
-40C
7
8
2nd Harmonic vs. Frequency vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
VD = 28 V, IDQ = 1.3 A, Pin = 20 dBm
-40C
7
8
+25C
9
+85C
10
11
12
2nd Harmonic (dBc)
2nd Harmonic (dBc)
7
8
9
+85C
10
-40C
8
9
+25C
+85C
10
11
12
11
2nd Harmonic vs. Frequency vs. PIN
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
12
Frequency (GHz)
Datasheet: Rev - 11-30-15
© 2015 TriQuint
12
Frequency (GHz)
VD = 28 V, IDQ = 1.3 A, Pin = 30 dBm
+25C
11
VD = 28 V, IDQ = 1.3 A, Pin = 25 dBm
7
2nd Harmonic vs. Frequency vs. Temp.
-40C
10
2nd Harmonic vs. Frequency vs. Temp.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
Frequency (GHz)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
9
+85C
Frequency (GHz)
2nd Harmonic (dBc)
2nd Harmonic (dBc)
Frequency (GHz)
+25C
10 dBm
15 dBm
20 dBm
7
8
25 dBm
30 dBm
9
10
11
12
Frequency (GHz)
- 9 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Application Circuit
Note:
VG1 and VG2, and VD1 and VD2, respectively, can be tied together.
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 16 A, IG limit to 124 mA
2. Set VG to −5.0 V
3. Set VD +28 V
1. Turn off RF signal
2. Reduce VG to −5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
4. Adjust VG more positive until IDQ = 1.3 A (VG ~
−2.6 V Typical)
5. Apply RF signal
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 10 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Evaluation Board and Mounting Detail
RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.35). Metal layers are 1.0 oz. copper. The microstrip line at
the connector interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.
VG1 and VG2, and VD1 and VD2, respectively, can be tied together.
Reference Des. Component
Value
Manuf.
C3, C6
C2, C5, C8, C11
10 uF, ±20 %, 50 V (1206), X5R
0.1 uF, ±10 %, 50 V (0805), X7R
Various
Various
Datasheet: Rev - 11-30-15
© 2015 TriQuint
Surface Mount Cap
Surface Mount Cap
- 11 of 14 -
Part Number
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Mechanical Drawing & Pad Description
Pin Number
Label
1
VG1
Gate voltage stage 1. Bias network is required; see Application Circuit as
an example
2, 4, 7, 9
3
GND
RF Input
RF Ground
RF Input; matched to 50Ω; DC Blocked
5
VG2
Gate voltage stage 2. Bias network is required; see Application Circuit as
an example
6
VD2
Drain voltage stage 2. Bias network is required; see Application Circuit as
an example.
8
RF Output
10
VD1
Datasheet: Rev - 11-30-15
© 2015 TriQuint
Description
RF Output; matched to 50Ω; DC Blocked, DC Shorted
Drain voltage stage 1. Bias network is required; see Application Circuit as
an example
- 12 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Assembly Notes
1. Clean the PCB, heat sink, and module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGM2635-CP to a heat sink.
3. To improve the thermal and RF performance, we recommend the following:
a. Mount the part to a high thermal conductivity heat sink.
b. Apply Arctic Silver thermal compound or a 4 mils thick indium shim between the package and the heat
sink.
c. Do not mount the part to a PCB, even when using thermal vias.
4. Apply solder to each pin of the TGM2635-CP.
5. Clean the assembly with alcohol.
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 13 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
Compatible with the latest version of J-STD-020 Lead
free solder, 260 °C.
RoHS–Compliance
ESD Rating: TBD
Value:
TBD
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
This part is compliant with EU 2002/95/EC RoHS directive
(Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
MSL Rating
Level 5a at 260 °C convection reflow
The part is rated Moisture Sensitivity Level 5a
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: 3A001.b.2.b
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such
information is entirely with the user. All information contained herein is subject to change without notice. Customers
should obtain and verify the latest relevant information before placing orders for TriQuint products. The information
contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights,
licenses, or any other intellectual property rights, whether with regard to such information itself or anything described
by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 14 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com