Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
DB2L32300L
Silicon epitaxial planar type
Unit: mm
0.3
For rectification
0.6
2
„ Features
y Low forward voltage VF
y Forward current (Average) IF(AV) = 0.5 A rectification is possible
y RoHS compliant
(EU RoHS / MSL:Level 1 compliant)
0.4
0.0425
1
„ Marking Symbol: A2
0.215 0.115
2
0.115
1
„ Packaging
0.1
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard)
„ Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature *2
Storage temperature
*1
VR
VRM
IF
IFSM
Tj
Topr
Tstg
Rating
Unit
30
30
0.5
5
150
-40 to +85
-55 to +150
V
V
A
A
°C
°C
°C
0.215
1. Cathode
2. Anode
Panasonic
JEITA
Code
DCSP0603010-N1
―
―
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
*2: VR×50%、Rth(j-a) = Rth(j-l)
„ Thermal Characteristics
Parameter
Thermal Resistance,Junction to Lead
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Ambient
*1
*2
Symbol
Rating
Unit
Rth(j-l)
Rth(j-a)
Rth(j-a)
35
202
610
°C/W
°C/W
°C/W
Note) *1: When mounted on 36 µm Cu pad(108.0mm 2 ) on 25.4mm×25.4mm board of FR4 material.
*2: When mounted on 36 µm Cu pad(27.6mm 2 ) on 25.4mm×25.4mm board of FR4 material.
Page 1 of 6
Established : 2013-07-31
Revised
: 2013-11-26
Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Symbol
VF
IR
Ct
trr
*1
Conditions
IF = 0.5 A
VR = 30 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
Min
Typ
Max
Unit
0.45
10
10
3.5
0.54
45
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *1: trr test circuit
Bias Insertion Unit
(N-50BU)
Pulse Generator
(PG-10N)
RS = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tp = 2 μs
tr = 0.35 ns
σ= 0.05
Output Pulse
Irr = 10 mA
IF = 100 mA
IR = 100 mA
Page 2 of 6
Established : 2013-07-31
Revised
: 2013-11-26
Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
Technical Data ( reference )
IF-VF
Ct-VR
1.0E+00
50
Ta = 125 °C
Terminal capacitance Ct (pF)
Forward current IF (A)
1.0E-01
1.0E-02
85 °C
1.0E-03
25 °C
1.0E-04
1.0E-05
0.0
Ta = 25 °C
-40 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
Forward voltage VF (V)
IR-VR
1.0E-01
30
Rth-t
1000
mounted on 36 µm Cu pad(27.6 mm2)
on 25.4 mm×25.4 mm board of FR4 material.
Ta = 125 °C
1.0E-02
20
Reverse voltage VR (V)
Rth(j-l) = 35 °C/W
1.0E-04
Thermal Resistance Rth (°C/W)
Reverse current IR (A)
1.0E-03
85 °C
1.0E-05
25 °C
1.0E-06
1.0E-07
100
mounted on 36 µm Cu pad(108.0 mm2)
on 25.4 mm×25.4 mm board of FR4 material.
1.0E-08
-40 °C
Single Pulse
1.0E-09
0
10
20
Reverse voltage VR (V)
30
10
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Page 3 of 6
Established : 2013-07-31
Revised
: 2013-11-26
Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
Technical Data ( reference )
Rth-t
tp
Normalized Effective Transient
Thermal Impedance (°C/W)
1000
tp
D=
T
T
Duty Cycle = 0.5
100
0.2
0.1
0.05
0.02
mounted on 36 µm Cu pad(108.0mm 2)
on 25.4 mm×25.4 mm board of FR4 material.
Single Pulse
10
0.001
0.01
0.1
1
10
100
1000
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance (°C/W)
1000
D=
tp
tp
T
Rth-t
T
Duty Cycle = 0.5
0.2
100
0.1
0.05
0.02
Single Pulse
10
0.001
mounted on 36 µm Cu pad(27.6mm 2)
on 25.4 mm×25.4 mm board of FR4 material.
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Page 4 of 6
Established : 2013-07-31
Revised
: 2013-11-26
Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
Technical Data ( reference )
IF（AV)-Tl
IF
tp
Average Forward current IF(AV) (A)
0.6
tp/T
0.5
T
VR = 15 V
Tj = 150 ℃
DC
0.4
1/2
0.3
Sine Wave
0.2
1/4
0.1
0
0
25
50
75
100
125
150
175
Lead temperature Tl (°C)
PF-IF（AV)
Ta = 25 °C
Forward Power Dissipation PF (W)
0.3
IF
DC
tp
Sine Wave
T
0.2
1/2
1/4
0.1
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
Average Forward current IF（AV） (A)
Page 5 of 6
Established : 2013-07-31
Revised
: 2013-11-26
Doc No. TT4-EA-14798
Revision. 2
Product Standards
Schottky Barrier Diode
DB2L32300L
DCSP0603010-N1
Unit: mm
0.30±0.03
1
0.215±0.030
0.115±0.030
0.4
0.10±0.02
0.0425±0.0300
2
0.115±0.030
0.60±0.03
2
1
0.215±0.030
„ Land Pattern (Reference) (Unit: mm)
0.215
0.4
0.215
0.3
Page 6 of 6
Established : 2013-07-31
Revised
: 2013-11-26
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(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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