Data Sheet No.PD 60158-H
IPS521/IPS521S
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
•
•
•
•
•
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Product Summary
Over temperature protection (with auto-restart)
Short-circuit protection (current limit)
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
Rds(on)
80mΩ (max)
V clamp
50V
I Limit
10A
V open load
3V
Description
The IPS521/IPS521S are fully protected five terminal
high side switches with built in short-circuit , overtemperature, ESD protection, inductive load capability
and diagnostic feedback. The output current is controlled when it reaches I lim value. The current
limitation is activated until the thermal protection
acts. The over-temperature protection turns off the
high side switch if the junction temperature exceeds
Tshutdown. It will automatically restart after the junction has cooled 7 oC below Tshutdown. A diagnostic
pin is provided for status feedback of short-circuit,
over-temperature and open load detection. The double
level shifter circuitry allows large offsets between the
logic ground and the load ground.
Truth Table
Typical Connection
Packages
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
Out
H
H
L
L
H
H
L
H
H L (limiting)
L
L
H L (cycling)
L
L
Dg
H
L
H
H
L
L
L
L
+ VCC
+ 5v
15K
Status
feedback
Output pull-up resistor
Vcc
Dg
Logic
Rdg
Rin
Logic
signal
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control
5 Lead
D2Pak (SMD220)
IPS521S
Out
In
Gnd
Load
Logic Gnd
Load Gnd
5 Lead
TO220 - IPS521
1
IPS521/IPS521S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).
Symbol Parameter
Min.
Max.
Vcc-50
Vcc+0.3
Maximum logic ground to load ground offset Vcc-50
Vcc+0.3
Vout
Voffset
Maximum output voltage
Vin
Iin, max
Maximum Input voltage
Vdg
Idg, max
Maximum diagnostic output voltage
Maximum diagnostic output current
Isd cont.
Diode max. permanent current (1)
Maximum positive IN current
(rth=62 o C/W)
7
-5
10
-0.3
7
V
-1
10
mA
A
—
2.2
—
10
—
4
ESD2
—
0.5
Test Conditions
V
-0.3
Isd pulsed Diode max. pulsed current (1)
ESD1
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Units
mA
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
(1)
Pd
Maximum power dissipation
(TC=25oC) IPS521
(TC=25oC) IPS521S
—
40
—
1.56
Tj max.
Max. storage & operating junction temp.
-40
+150
Tlead
Lead temperature (soldering 10 seconds)
—
300
—
50
Min.
Typ.
—
—
—
—
—
!
$
Vcc max. Maximum Vcc voltage
W
o
C
V
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
Rth
1
2
1
2
3
Thermal
Thermal
Thermal
Thermal
Thermal
resistance junction to case
resistance junction ambient
resistance with standard footprint
resistance with 1" square footprint
resistance junction to case
60
35
!
Max. Units Test Conditions
—
—
—
—
—
TO-220
o
C/W
D2PAK (SMD220)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS521/IPS521S
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Vcc
VIH
VIL
Iout
5.5
4
-0.3
35
5.5
0.9
—
2.2
—
4
10
1.9
6
20
Iout
Rin
Rdg
Continuous Vcc voltage
High level input voltage
Low level input voltage
Continuous output current
(Tamb = 85oC, Tj = 125oC, Rth = 60oC/W, ) IPS521
Continuous output current
(Tamb = 85oC, Tj = 125oC, Rth = 80oC/W, ) IPS521S
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Units
V
A
kΩ
Static Electrical Characteristics
(Tj = 25oC, Vcc = 14V unless otherwise specified.)
Symbol Parameter
Min.
Typ.
ON state resistance Tj = 25oC
—
55
80
ON state resistance @ Vcc = 6V
—
55
80
ON state resistance Tj = 150oC
—
110
140
Vcc oper.
V clamp 1
V clamp 2
Vf
Icc off
Icc on
Icc ac
Vdgl
Ioh
Iol
Idg
Operating voltage range
Vcc to OUT clamp voltage 1
Vcc to OUT clamp voltage 2
Body diode forward voltage
Supply current when OFF
Supply current when ON
Ripple current when ON (AC RMS)
Low level diagnostic output voltage
Output leakage current
Output leakage current
5.5
50
—
—
—
—
—
—
—
0
—
55
56
0.9
16
0.6
20
0.15
50
—
35
—
65
1.2
50
2
—
0.4
120
25
leakage
Diagnostic output leakage current
IN high threshold voltage
IN low threshold voltage
On state IN positive current
Input hysteresis
—
—
1
—
0.1
—
2.2
1.9
70
0.25
10
3
—
200
0.5
Rds(on)
Max. Units Test Conditions
Vin = 5V, Iout = 5A
@Tj=25o C
Rds(on)
(V cc=6V)
Rds(on)
mΩ
Vin = 5V, Iout = 2.5A
Vin = 5V, Iout = 5A
@Tj=150oC
Vih
Vil
Iin, on
In hyst
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V
µA
mA
µA
V
µA
Id = 10mA (see Fig.1 & 2)
Id = Isd (see Fig.1 & 2)
Id = 2.5A, Vin = 0V
Vin = 0V, Vout = 0V
Vin = 5V
Vin = 5V
Idg = 1.6 mA
Vout = 6V
Vout = 0V
Vdg = 5.5V
V
µA
V
Vin = 5V
3
IPS521/IPS521S
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 2.8Ω, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Tdon
Tr1
Tr2
dV/dt (on)
Eon
T doff
Tf
dV/dt (off)
Eoff
Tdiag
Min.
Turn-on delay time
Rise time to Vout = Vcc - 5V
Rise time Vcc - 5V to Vout = 90% of Vcc
Turn ON d V/dt
Turn ON energy
Turn-off delay time
Fall time to V out = 10% of Vcc
Turn OFF d V/dt
Turn OFF energy
Vout to Vdiag propagation delay
Typ. Max. Units Test Conditions
—
—
—
—
—
—
—
—
—
—
10
25
130
0.7
1500
35
25
0.9
250
5
Min.
Typ.
7
—
—
2
2
10
165
158
3
3
40
60
200
2
—
70
50
3
—
15
µs
See figure 3
V/µs
µJ
µs
V/µs
µJ
µs
See figure 4
See figure 6
Protection Characteristics
Symbol Parameter
I lim
Internal current limit
T sd+
Over-temp. positive going threshold
T sdOver-temp. negative going threshold
V sc
Short-circuit detection voltage (3)
Vopen load Open load detection threshold
Max. Units Test Conditions
14
—
—
4
4
A
o
C
V
Vout = 0V
See fig. 2
See fig. 2
See fig. 2
(3) Referenced to Vcc
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
12345
12345
5 Lead - D2PAK (SMD220)
5 Lead - TO220
IPS521
IPS521S
Part Number
4
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IPS521/IPS521S
Functional Block Diagram
All values are typical
VCC
50V
Over
temperature
165°C
158°C
Tj
Charge
pump
62 V
2.7 V
IN
Level
shift
2.2 V
7 V
200 KΩ
driver
Current
limit
DG
+
10 A
7 V
40 Ω
3V
+
+
Short-circuit
Open load
GND
-
3V
VOUT
T clamp
Vin
5V
0V
Vin
Iout
limiting
T shutdown
cycling
Ilim.
Iout
( + Vcc )
Out
T
0V
Tsd+
Tsd(160 ° )
V clamp
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
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Figure 2 - Protection timing diagram
5
IPS521/IPS521S
Vin
Vcc
90%
Vin
Vcc - 5V
Vout
dV/dt on
90%
10%
Td on
dV/dt off
Tr 1
Vout
Tr 2
E1(t)
10%
Iout1
Eon1
Iout2
Resistive load
Td off
E2 (t)
Tf
Inductive load
Eon2
Figure 4 - Switching times definition (turn-off)
Figure 3 - Switching times definition (turn-on)
Turn on energy with a resistive or an
inductive load
V in
Dg Vcc
Vcc
Vcc -Vsc
IN
Out
+
Gnd
L
Vin
14 V
V o ut
Vout
Vol
R
V d ia g
5v
0v
Iout
Diag off blanking
Diag on blanking
Rem :
V load is negative during demagnetization
Figure 5 - Active clamp test circuit
6
T diag
Figure 6 - Diagnostic delay definitions
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IPS521/IPS521S
100
200%
150%
50
100%
0
0
5
10
15
20
25
30
35
50%
-50
Figure 7 - Rds(on) (mΩ) Vs Vcc (V)
0
50
100
150
Figure 8 - Normalized Rds(on) (%) Vs Tj (oC)
10
100
1
50
0.1
0
0
2
4
6
8
Figure 9 - Rds(on) (mΩ) Vs Iout (A)
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10
Figure 10 - Max. Iout (A) Vs Load Inductance (uH)
7
IPS521/IPS521S
10
10
Rthja= 10°C/W
Rthja= 20°C/W
5
1inch² footprint
Rthja= 35°C/W
5
Rthja= 40°C/W
Std. footprint
Rthja= 60°C/W
Free air
0
0
25
50
75
100
125
25
150
Figure 11a - Max load current (A) Vs Tamb (oC)
IPS521
50
75
100
125
150
Figure 11b - Max load current (A) Vs Tamb (oC)
IPS521S
15
100
__ TO220/SMD 220 free air
- - - Rth = 5 °C/W
10
10
1
5
0.1
Figure 12 - Transient Thermal Impedance (oC/W)
Vs Time (S)
8
1E+03
1E+02
1E+01
1e+00
1E-01
1E-02
1E-03
1E-04
1E-05
0.01
0
-50
0
50
100
150
Figure 13 - Ilim (A) Vs Tj (oC)
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IPS521/IPS521S
Resistive load
3500
10000
3000
1000
I=Imax vs Induct.(see fig.10)
Eon
2500
Eoff
100
2000
1500
I=1.5A
10
1000
4
5
6
7
Figure 14 - Eon, Eoff (µJ) Vs Iout (A)
1E+06
3
1E+05
2
1E+04
1
1E+03
0.1
0
1E+02
0
1E+01
1
500
Figure 15 - Eon (µJ) Vs Load Inductance (µH)
(see Fig. 3)
150
1.00E-03
125
Diag on blanking
100
1.00E-04
75
50
1.00E-05
25
Diag off blanking
0
0
1
2
Figure 16 - Diag Blanking time (µS) Vs Iout (A)
(resistive load - see Fig. 6)
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3
1.00E-06
0
5
10
15
20
25
30
35
Figure 17 - Icc (mA) Vs Vcc (V)
9
IPS521/IPS521S
Case Outline 5 Lead - TO220
IRGB 01-3042 01
Tape & Reel 5 Lead - D2PAK (SMD220)
01-3071 00 / 01-3072 00
10
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IPS521/IPS521S
Case Outline 5 Lead - D2PAK (SMD220)
01-3066 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++ 44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 3/27/2000
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